CN1099138C - 带倒置的misfet结构的超导场效应晶体管 - Google Patents

带倒置的misfet结构的超导场效应晶体管 Download PDF

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Publication number
CN1099138C
CN1099138C CN91111456A CN91111456A CN1099138C CN 1099138 C CN1099138 C CN 1099138C CN 91111456 A CN91111456 A CN 91111456A CN 91111456 A CN91111456 A CN 91111456A CN 1099138 C CN1099138 C CN 1099138C
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CN
China
Prior art keywords
superconducting
layer
field effect
substrate
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN91111456A
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English (en)
Chinese (zh)
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CN1073045A (zh
Inventor
贝德诺茨·J·乔治
曼哈特·J·迪特尔
米勒·C·亚历山大
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN1073045A publication Critical patent/CN1073045A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/706—Contact pads or leads bonded to superconductor

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
CN91111456A 1991-01-07 1991-12-06 带倒置的misfet结构的超导场效应晶体管 Expired - Fee Related CN1099138C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP91810006A EP0494580B1 (en) 1991-01-07 1991-01-07 Superconducting field-effect transistor with inverted MISFET structure and method for making the same
EP91810006.6 1991-01-07

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CNB001036076A Division CN1138301C (zh) 1991-01-07 2000-02-28 超导体场效应晶体管制造方法
CNB001222333A Division CN1173418C (zh) 1991-01-07 2000-07-31 带倒置的misfet结构的超导场效应晶体管

Publications (2)

Publication Number Publication Date
CN1073045A CN1073045A (zh) 1993-06-09
CN1099138C true CN1099138C (zh) 2003-01-15

Family

ID=8208808

Family Applications (3)

Application Number Title Priority Date Filing Date
CN91111456A Expired - Fee Related CN1099138C (zh) 1991-01-07 1991-12-06 带倒置的misfet结构的超导场效应晶体管
CNB001036076A Expired - Fee Related CN1138301C (zh) 1991-01-07 2000-02-28 超导体场效应晶体管制造方法
CNB001222333A Expired - Fee Related CN1173418C (zh) 1991-01-07 2000-07-31 带倒置的misfet结构的超导场效应晶体管

Family Applications After (2)

Application Number Title Priority Date Filing Date
CNB001036076A Expired - Fee Related CN1138301C (zh) 1991-01-07 2000-02-28 超导体场效应晶体管制造方法
CNB001222333A Expired - Fee Related CN1173418C (zh) 1991-01-07 2000-07-31 带倒置的misfet结构的超导场效应晶体管

Country Status (10)

Country Link
US (3) US5278136A (enExample)
EP (1) EP0494580B1 (enExample)
JP (1) JPH0834321B2 (enExample)
KR (1) KR960002292B1 (enExample)
CN (3) CN1099138C (enExample)
CA (1) CA2058780A1 (enExample)
DE (1) DE69132972T2 (enExample)
MY (1) MY109375A (enExample)
SG (1) SG46182A1 (enExample)
TW (1) TW238399B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100431190C (zh) * 2004-09-01 2008-11-05 复旦大学 一种有机场效应管取向层及其制备方法和应用

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2674374A1 (fr) * 1991-03-22 1992-09-25 Bull Sa Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.
EP0545801B1 (en) * 1991-11-30 1997-03-19 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
EP0633331B1 (en) * 1993-07-02 2000-01-19 Sumitomo Electric Industries, Limited Process for preparing high crystallinity SrTiO3 oxide thin film
KR0148598B1 (ko) * 1994-11-21 1998-10-15 정선종 두꺼운 초전도채널층을 구비한 고온초전도 전계효과 트랜지스터의 제조방법
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
JPH08227743A (ja) * 1995-02-20 1996-09-03 Sumitomo Electric Ind Ltd 酸化物超電導体用金属電極
KR100194621B1 (ko) * 1995-12-21 1999-07-01 정선종 고온초전도 전계효과 소자 및 그 제조방법
US6890766B2 (en) * 1999-03-17 2005-05-10 International Business Machines Corporation Dual-type thin-film field-effect transistors and applications
SG95620A1 (en) * 1999-05-18 2003-04-23 Ibm Dual-type thin-film field-effect transistors and applications
TR200201283T2 (tr) * 1999-08-19 2002-09-23 Manufacturing And Technology Conversion International, Inc. Dolaylı olarak ısıtılan buhar yeniden yapılandırıcı sistemli gaz türbini.
DE10348006B4 (de) * 2003-10-15 2006-07-20 Infineon Technologies Ag Feldeffekttransistor, insbesondere vertikaler Feldeffekttransistor, Speicherzelle und Herstellungsverfahren
GB0423343D0 (en) * 2004-10-21 2004-11-24 Koninkl Philips Electronics Nv Metal-oxide-semiconductor device
US7601165B2 (en) * 2006-09-29 2009-10-13 Biomet Sports Medicine, Llc Method and apparatus for forming a self-locking adjustable suture loop
WO2008109564A1 (en) * 2007-03-02 2008-09-12 The Regents Of The University Of California Complex oxides useful for thermoelectric energy conversion
US8204564B2 (en) * 2007-11-07 2012-06-19 Brookhaven Science Associates, Llc High temperature interfacial superconductivity
KR20130129674A (ko) 2012-05-21 2013-11-29 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터 표시판
KR102376508B1 (ko) * 2017-11-16 2022-03-18 삼성전자주식회사 집적회로 장치 및 그 제조 방법

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069262B2 (ja) * 1984-09-21 1994-02-02 株式会社日立製作所 超電導デバイス
EP0257474A3 (en) * 1986-08-13 1989-02-15 Hitachi, Ltd. Superconducting device
JPS6346786A (ja) * 1986-08-15 1988-02-27 Hitachi Ltd 超電導トランジスタ
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
JPS63239990A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 超電導トランジスタ
DE3885153T2 (de) * 1987-05-31 1994-05-19 Sumitomo Electric Industries Methode zur Herstellung einer supraleitenden Dünnschicht.
JPS63308977A (ja) * 1987-06-11 1988-12-16 Toshiba Corp 超電導素子
EP0299870B1 (en) * 1987-07-13 1994-04-13 Sumitomo Electric Industries Limited Method for preparing a superconducting thin film
JPS6431475A (en) * 1987-07-28 1989-02-01 Univ Tokyo Superconducting device and forming method thereof
NL8701779A (nl) * 1987-07-28 1989-02-16 Philips Nv Supergeleidende dunne laag.
US4980339A (en) * 1987-07-29 1990-12-25 Matsushita Electric Industrial Co., Ltd. Superconductor structure
JPH01101676A (ja) * 1987-10-15 1989-04-19 Mitsubishi Electric Corp 超伝導トランジスタ
AU610260B2 (en) * 1987-10-16 1991-05-16 Furukawa Electric Co. Ltd., The Oxide superconductor shaped body and method of manufacturing the same
GB2213839B (en) * 1987-12-23 1992-06-17 Plessey Co Plc Semiconducting thin films
US5221660A (en) * 1987-12-25 1993-06-22 Sumitomo Electric Industries, Ltd. Semiconductor substrate having a superconducting thin film
EP0324044B1 (en) * 1988-01-15 1992-11-25 International Business Machines Corporation A field-effect device with a superconducting channel
EP0329103B2 (en) * 1988-02-17 1999-03-17 Kabushiki Kaisha Riken Process for manufacturing thin film of high-Tc superconducting oxide
US5084438A (en) * 1988-03-23 1992-01-28 Nec Corporation Electronic device substrate using silicon semiconductor substrate
IT1217585B (it) * 1988-05-13 1990-03-30 Enichem Spa Film sottili superconduttori ad elevata densita' di corrente e loro metodo di preparazione
WO1989011736A1 (fr) * 1988-05-24 1989-11-30 Siemens Aktiengesellschaft Procede pour produire des films minces d'un supraconducteur haute temperature et films ainsi produits
JP2646683B2 (ja) * 1988-08-02 1997-08-27 日本電気株式会社 電子デバイス用基板
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ
JPH0262082A (ja) * 1988-08-29 1990-03-01 Fujitsu Ltd 超伝導トランジスタ
JP3020524B2 (ja) * 1988-11-28 2000-03-15 株式会社日立製作所 酸化物超電導素子
JPH02181482A (ja) * 1989-01-06 1990-07-16 Sumitomo Electric Ind Ltd 超電導体層を有する半導体基板
US5075283A (en) * 1989-03-09 1991-12-24 International Superconductor Corp. High-Tc superconductor quantum interference devices
US5132282A (en) * 1990-03-16 1992-07-21 Nathan Newman High temperature superconductor-strontium titanate sapphire structures
US5130294A (en) * 1990-08-13 1992-07-14 Kookrin Char High temperature superconductor-calcium titanate structures
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
US5128316A (en) * 1990-06-04 1992-07-07 Eastman Kodak Company Articles containing a cubic perovskite crystal structure
EP0523275B1 (en) * 1991-07-19 1996-02-28 International Business Machines Corporation Enhanced superconducting field-effect transistor with inverted MISFET structure and method for making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100431190C (zh) * 2004-09-01 2008-11-05 复旦大学 一种有机场效应管取向层及其制备方法和应用

Also Published As

Publication number Publication date
DE69132972D1 (de) 2002-05-08
EP0494580A1 (en) 1992-07-15
CN1269603A (zh) 2000-10-11
US5376569A (en) 1994-12-27
CN1138301C (zh) 2004-02-11
US5382565A (en) 1995-01-17
MY109375A (en) 1997-01-31
JPH05235426A (ja) 1993-09-10
SG46182A1 (en) 1998-02-20
CN1173418C (zh) 2004-10-27
TW238399B (enExample) 1995-01-11
CA2058780A1 (en) 1992-07-08
CN1073045A (zh) 1993-06-09
DE69132972T2 (de) 2003-03-13
KR920015626A (ko) 1992-08-27
CN1323070A (zh) 2001-11-21
JPH0834321B2 (ja) 1996-03-29
US5278136A (en) 1994-01-11
EP0494580B1 (en) 2002-04-03
KR960002292B1 (ko) 1996-02-14

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