CN109640011B - 固态成像设备和成像系统 - Google Patents

固态成像设备和成像系统 Download PDF

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Publication number
CN109640011B
CN109640011B CN201811153284.2A CN201811153284A CN109640011B CN 109640011 B CN109640011 B CN 109640011B CN 201811153284 A CN201811153284 A CN 201811153284A CN 109640011 B CN109640011 B CN 109640011B
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China
Prior art keywords
transistor
main node
imaging device
solid
state imaging
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CN201811153284.2A
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Chinese (zh)
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CN109640011A (zh
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篠原真人
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G01C3/08—Use of electric radiation detectors
    • G01C3/085—Use of electric radiation detectors with electronic parallax measurement
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/74—Circuitry for scanning or addressing the pixel array

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201811153284.2A 2017-10-05 2018-09-30 固态成像设备和成像系统 Active CN109640011B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-195154 2017-10-05
JP2017195154A JP6953263B2 (ja) 2017-10-05 2017-10-05 固体撮像装置および撮像システム

Publications (2)

Publication Number Publication Date
CN109640011A CN109640011A (zh) 2019-04-16
CN109640011B true CN109640011B (zh) 2021-10-26

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US (1) US10944931B2 (enExample)
JP (1) JP6953263B2 (enExample)
CN (1) CN109640011B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7108421B2 (ja) 2018-02-15 2022-07-28 キヤノン株式会社 撮像装置及び撮像システム
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
JP2021192395A (ja) * 2018-08-29 2021-12-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
US11503234B2 (en) 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
US11006064B2 (en) * 2019-09-16 2021-05-11 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor and method of operating pixel array by CMOS image sensor
JPWO2021117511A1 (enExample) * 2019-12-10 2021-06-17
US12155956B2 (en) * 2020-02-03 2024-11-26 Sony Semiconductor Solutions Corporation Solid-state imaging element and imaging device with current feedback to input transistor that receives pixel circuit input voltage
JP2023022747A (ja) * 2021-08-03 2023-02-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2023023218A (ja) 2021-08-04 2023-02-16 キヤノン株式会社 光電変換装置
EP4280282A1 (en) * 2022-05-18 2023-11-22 Canon Kabushiki Kaisha Radiation detector and radiation imaging system
JP2024004306A (ja) 2022-06-28 2024-01-16 キヤノン株式会社 光電変換装置
JP2024017294A (ja) 2022-07-27 2024-02-08 キヤノン株式会社 光電変換装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563468A (ja) * 1991-09-04 1993-03-12 Hitachi Ltd 増幅回路
CN101534397A (zh) * 2008-03-14 2009-09-16 佳能株式会社 固态图像拾取装置
JP2010056675A (ja) * 2008-08-26 2010-03-11 Texas Instr Japan Ltd 固体撮像装置及びその駆動方法
CN103529889A (zh) * 2012-07-02 2014-01-22 中国科学院声学研究所 低噪声cmos集成参考电压产生电路
CN105304658A (zh) * 2014-06-24 2016-02-03 佳能株式会社 固态摄像装置

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812905B2 (ja) 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置及びその製造方法
JPH0812906B2 (ja) 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置の製造方法
EP0277016B1 (en) 1987-01-29 1998-04-15 Canon Kabushiki Kaisha Photoelectric conversion apparatus
JP2678062B2 (ja) 1989-06-14 1997-11-17 キヤノン株式会社 光電変換装置
US5146339A (en) 1989-11-21 1992-09-08 Canon Kabushiki Kaisha Photoelectric converting apparatus employing Darlington transistor readout
US7364058B2 (en) 1997-09-26 2008-04-29 Scientific Games International, Inc. Ticket dispensing apparatus
US6493030B1 (en) * 1998-04-08 2002-12-10 Pictos Technologies, Inc. Low-noise active pixel sensor for imaging arrays with global reset
JP3647390B2 (ja) 2000-06-08 2005-05-11 キヤノン株式会社 電荷転送装置、固体撮像装置及び撮像システム
JP4252247B2 (ja) 2002-02-28 2009-04-08 富士通マイクロエレクトロニクス株式会社 感度を上げることができるｃｍｏｓイメージセンサ
CN1225897C (zh) 2002-08-21 2005-11-02 佳能株式会社 摄像装置
US20050068438A1 (en) * 2003-09-30 2005-03-31 Innovative Technology Licensing, Llc Low noise CMOS amplifier for imaging sensors
JP4194544B2 (ja) 2003-12-05 2008-12-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP2005328275A (ja) 2004-05-13 2005-11-24 Canon Inc 固体撮像装置および撮像システム
JP2005328274A (ja) 2004-05-13 2005-11-24 Canon Inc 固体撮像装置および撮像システム
JP4666383B2 (ja) * 2006-08-10 2011-04-06 シャープ株式会社 増幅型固体撮像装置および電子情報機器
JP4242427B2 (ja) 2007-02-01 2009-03-25 シャープ株式会社 増幅型固体撮像装置
JP5074808B2 (ja) 2007-04-11 2012-11-14 キヤノン株式会社 光電変換装置及び撮像システム
JP4685120B2 (ja) 2008-02-13 2011-05-18 キヤノン株式会社 光電変換装置及び撮像システム
JP5221982B2 (ja) 2008-02-29 2013-06-26 キヤノン株式会社 固体撮像装置及びカメラ
JP2010016056A (ja) 2008-07-01 2010-01-21 Canon Inc 光電変換装置
JP5661260B2 (ja) 2009-07-16 2015-01-28 キヤノン株式会社 固体撮像装置及びその駆動方法
JP5489570B2 (ja) 2009-07-27 2014-05-14 キヤノン株式会社 光電変換装置及び撮像システム
JP5422455B2 (ja) * 2010-03-23 2014-02-19 パナソニック株式会社 固体撮像装置
JP5767465B2 (ja) 2010-12-15 2015-08-19 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
US9294700B2 (en) * 2011-12-27 2016-03-22 Sony Corporation Imaging element, imaging device, electronic device, and imaging method
JP6053505B2 (ja) * 2012-01-18 2016-12-27 キヤノン株式会社 固体撮像装置
WO2014049901A1 (ja) * 2012-09-27 2014-04-03 パナソニック株式会社 固体撮像装置
JP6055270B2 (ja) 2012-10-26 2016-12-27 キヤノン株式会社 固体撮像装置、その製造方法、およびカメラ
FR2997596B1 (fr) 2012-10-26 2015-12-04 New Imaging Technologies Sas Structure d'un pixel actif de type cmos
JP6033110B2 (ja) * 2013-02-14 2016-11-30 オリンパス株式会社 固体撮像装置および撮像装置
JP2015177034A (ja) 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
JP2016058818A (ja) 2014-09-08 2016-04-21 キヤノン株式会社 撮像装置及び撮像システム
JP6438290B2 (ja) * 2014-12-12 2018-12-12 キヤノン株式会社 撮像装置およびその制御方法
JP6552479B2 (ja) 2016-12-28 2019-07-31 キヤノン株式会社 固体撮像装置及び撮像システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563468A (ja) * 1991-09-04 1993-03-12 Hitachi Ltd 増幅回路
CN101534397A (zh) * 2008-03-14 2009-09-16 佳能株式会社 固态图像拾取装置
JP2010056675A (ja) * 2008-08-26 2010-03-11 Texas Instr Japan Ltd 固体撮像装置及びその駆動方法
CN103529889A (zh) * 2012-07-02 2014-01-22 中国科学院声学研究所 低噪声cmos集成参考电压产生电路
CN105304658A (zh) * 2014-06-24 2016-02-03 佳能株式会社 固态摄像装置

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US20190110013A1 (en) 2019-04-11
JP2019068382A (ja) 2019-04-25
CN109640011A (zh) 2019-04-16
JP6953263B2 (ja) 2021-10-27
US10944931B2 (en) 2021-03-09

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