CN109638012A - 一种双向防护芯片及其制备方法 - Google Patents
一种双向防护芯片及其制备方法 Download PDFInfo
- Publication number
- CN109638012A CN109638012A CN201811505034.0A CN201811505034A CN109638012A CN 109638012 A CN109638012 A CN 109638012A CN 201811505034 A CN201811505034 A CN 201811505034A CN 109638012 A CN109638012 A CN 109638012A
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- epitaxial layer
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- 230000002265 prevention Effects 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000002347 injection Methods 0.000 claims abstract description 62
- 239000007924 injection Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 230000035755 proliferation Effects 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811505034.0A CN109638012B (zh) | 2018-12-10 | 2018-12-10 | 一种双向防护芯片及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811505034.0A CN109638012B (zh) | 2018-12-10 | 2018-12-10 | 一种双向防护芯片及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109638012A true CN109638012A (zh) | 2019-04-16 |
CN109638012B CN109638012B (zh) | 2020-09-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811505034.0A Active CN109638012B (zh) | 2018-12-10 | 2018-12-10 | 一种双向防护芯片及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN109638012B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106409828A (zh) * | 2016-11-30 | 2017-02-15 | 上海芯石微电子有限公司 | 一种适用小型化封装的半桥整流肖特基器件及制造方法 |
US20170309518A1 (en) * | 2015-06-24 | 2017-10-26 | Invensas Corporation | Structures and Methods for Reliable Packages |
-
2018
- 2018-12-10 CN CN201811505034.0A patent/CN109638012B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170309518A1 (en) * | 2015-06-24 | 2017-10-26 | Invensas Corporation | Structures and Methods for Reliable Packages |
CN106409828A (zh) * | 2016-11-30 | 2017-02-15 | 上海芯石微电子有限公司 | 一种适用小型化封装的半桥整流肖特基器件及制造方法 |
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CN109638012B (zh) | 2020-09-01 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20200807 Address after: No.43, Xinan Road, Xidi Village, Chongwu town, Hui'an County, Quanzhou City, Fujian Province Applicant after: Huian County Chongwu town Fangxin tea set firm Address before: 362216 Fujian city of Quanzhou province Jinjiang city Luoshan Street Building No. 1208 Aetna world city Applicant before: Quanzhou Zhenmei Intelligent Technology Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20230712 Address after: 201700 Room 2211, Area B, Floor 2, Building 2, No. 715, Yingshun Road, Qingpu District, Shanghai Patentee after: SHANGHAI YB ELECTRONICS CO.,LTD. Address before: 362100 No.43, Xinan Road, Xidi Village, Chongwu town, Hui'an County, Quanzhou City, Fujian Province Patentee before: Huian County Chongwu town Fangxin tea set firm |
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