CN109628790A - 一种高纯金银钯铂合金键合引线及其制备方法 - Google Patents
一种高纯金银钯铂合金键合引线及其制备方法 Download PDFInfo
- Publication number
- CN109628790A CN109628790A CN201811555563.1A CN201811555563A CN109628790A CN 109628790 A CN109628790 A CN 109628790A CN 201811555563 A CN201811555563 A CN 201811555563A CN 109628790 A CN109628790 A CN 109628790A
- Authority
- CN
- China
- Prior art keywords
- silver
- purity
- pallas
- bonding wire
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Wire Bonding (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
组别 | 延伸率(%) | 拉伸强度(N/mm2) |
对比例1 | 11.5 | 295 |
对比例2 | 11.7 | 300 |
对比例3 | 7.4 | 285 |
实施例1 | 13.5 | 340 |
实施例2 | 13.6 | 335 |
实施例3 | 13.8 | 345 |
实施例4 | 13.5 | 339 |
实施例5 | 13.5 | 342 |
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811555563.1A CN109628790A (zh) | 2018-12-18 | 2018-12-18 | 一种高纯金银钯铂合金键合引线及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811555563.1A CN109628790A (zh) | 2018-12-18 | 2018-12-18 | 一种高纯金银钯铂合金键合引线及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109628790A true CN109628790A (zh) | 2019-04-16 |
Family
ID=66075377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811555563.1A Withdrawn CN109628790A (zh) | 2018-12-18 | 2018-12-18 | 一种高纯金银钯铂合金键合引线及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109628790A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112342426A (zh) * | 2020-11-10 | 2021-02-09 | 汕头市骏码凯撒有限公司 | 新型银合金键合丝及其制造方法 |
CN113737049A (zh) * | 2021-09-06 | 2021-12-03 | 江西蓝微电子科技有限公司 | 一种高含铂金属的银铂键合丝及其制备方法 |
CN114005808A (zh) * | 2021-10-29 | 2022-02-01 | 江西蓝微电子科技有限公司 | 一种高纯金银钯铂合金键合引线及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06314517A (ja) * | 1993-05-01 | 1994-11-08 | Nippon Cement Co Ltd | 導体ペースト及びそれを用いたセラミック多層配線基板 |
JP2008198977A (ja) * | 2007-01-18 | 2008-08-28 | Nippon Steel Materials Co Ltd | 半導体実装用ボンディングワイヤ |
CN102912176A (zh) * | 2012-09-21 | 2013-02-06 | 宁波康强电子股份有限公司 | 高端封装银合金键合丝及其制备方法 |
-
2018
- 2018-12-18 CN CN201811555563.1A patent/CN109628790A/zh not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06314517A (ja) * | 1993-05-01 | 1994-11-08 | Nippon Cement Co Ltd | 導体ペースト及びそれを用いたセラミック多層配線基板 |
JP2008198977A (ja) * | 2007-01-18 | 2008-08-28 | Nippon Steel Materials Co Ltd | 半導体実装用ボンディングワイヤ |
CN102912176A (zh) * | 2012-09-21 | 2013-02-06 | 宁波康强电子股份有限公司 | 高端封装银合金键合丝及其制备方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112342426A (zh) * | 2020-11-10 | 2021-02-09 | 汕头市骏码凯撒有限公司 | 新型银合金键合丝及其制造方法 |
CN113737049A (zh) * | 2021-09-06 | 2021-12-03 | 江西蓝微电子科技有限公司 | 一种高含铂金属的银铂键合丝及其制备方法 |
CN113737049B (zh) * | 2021-09-06 | 2022-02-08 | 江西蓝微电子科技有限公司 | 一种高含铂金属的银铂键合丝及其制备方法 |
CN114005808A (zh) * | 2021-10-29 | 2022-02-01 | 江西蓝微电子科技有限公司 | 一种高纯金银钯铂合金键合引线及其制备方法 |
CN114005808B (zh) * | 2021-10-29 | 2024-08-23 | 江西蓝微电子科技有限公司 | 一种高纯金银钯铂合金键合引线及其制备方法 |
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Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201126 Address after: 518052 Guangdong city of Shenzhen province Qianhai Shenzhen Hong Kong cooperation zone before Bay Road No. 1 building 201 room A Applicant after: Shenzhen Kingstar application materials Co.,Ltd. Address before: 277500 West of Yikang Avenue, Tengzhou Economic Development Zone, Zaozhuang City, Shandong Province (in the courtyard of Shandong Chenhui Decoration Engineering Co., Ltd.) Applicant before: SHANDONG YINGNAIXIN ELECTRONIC TECHNOLOGY Co.,Ltd. |
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WW01 | Invention patent application withdrawn after publication | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190416 |