CN104009015A - 用于半导体封装的银合金焊接导线 - Google Patents
用于半导体封装的银合金焊接导线 Download PDFInfo
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- CN104009015A CN104009015A CN201410041997.5A CN201410041997A CN104009015A CN 104009015 A CN104009015 A CN 104009015A CN 201410041997 A CN201410041997 A CN 201410041997A CN 104009015 A CN104009015 A CN 104009015A
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- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 229910000679 solder Inorganic materials 0.000 title abstract description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 87
- 239000000654 additive Substances 0.000 claims abstract description 75
- 230000000996 additive effect Effects 0.000 claims abstract description 75
- 238000003466 welding Methods 0.000 claims abstract description 73
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 43
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052737 gold Inorganic materials 0.000 claims abstract description 14
- 239000010931 gold Substances 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 16
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 description 32
- 238000012360 testing method Methods 0.000 description 30
- 150000001398 aluminium Chemical class 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- -1 aluminium silver Chemical compound 0.000 description 11
- 229910000765 intermetallic Inorganic materials 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 230000001351 cycling effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 240000005373 Panax quinquefolius Species 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Substances [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
一种用于半导体封装的银合金焊接导线，包含一银合金组份，包括银、钯、一第一添加剂，及一第二添加剂，基于该银合金组份的重量百分比为100wt%计，钯的重量百分比大于0且小于2wt%，该第一添加剂的重量百分比不小于0.001wt%，且不大于2wt%，该第二添加剂的重量百分比不小于0.001wt%，且不大于2wt%，该第一添加剂选自铟、镓、锡、磷，及其中一组合，该第二添加剂选自铂、金、钇，及其中一组合。本发明的银合金焊接导线不需高浓度的钯含量，仍在焊合于一铝垫片后具备优良的可靠度。
Description
技术领域
本发明涉及一种焊接导线，特别是涉及一种用于半导体封装的银合金焊接导线。
背景技术
引线键合(wire bonding)工艺(又称焊接导线工艺)是半导体封装工艺技术领域中重要的一环，其主要是利用引线键合的方式，使得一焊接导线焊合于一半导体芯片的一金属垫片(pad)表面，特别是一铝垫片表面。
然而，当该焊接导线是以银为主体的银合金焊接导线时，焊合于该半导体芯片的铝垫片表面的焊接导线与铝间的界面处易形成一层铝银介金属化合物(Ag2Al)而该铝银介金属化合物在潮湿且含水气的环境易使焊接导线的银发生伽凡尼腐蚀(Galvanic corrosion)，导致该焊接导线形成于铝垫片后的封装成品的可靠度降低。
针对此问题，中国台湾第201233817号专利公开案所揭示的内容主要利用整体焊接导线中含有高浓度的钯，配合添加钙、镧、铕，或铍等元素强化银合金焊接导线的可靠性，其原理在于高浓度的钯在焊接于该铝垫片上时，将形成钯浓化层，可抑制银与氧化铝受腐蚀的程度。然而，该银合金焊接导线中仍需含有4%以上的金，及至少2%以上的高浓度的钯，才能在焊接于铝垫片上时能通过基本的可靠性测量项目；该专利公开案也揭示，钯的含量低于2wt%时，便无法抑制铝银介金属化合物的生成而使得可靠度低，且金与钯本身为贵重且价格高昂的金属，所以该专利公开案所揭示的银合金焊接导线的成本非常高。
发明内容
因此，发明人潜心研究低钯含量及低金含量的银合金焊接导线。
本发明的目的在于提供一种低钯含量的用于半导体封装的银合金焊接导线。
本发明用于半导体封装的银合金焊接导线，包含银合金组份，该银合金组份包括银、钯、一第一添加剂，及一第二添加剂，基于该银合金组份的重量百分比为100wt%计，钯的重量百分比大于0且小于2%，该第一添加剂的重量百分比不小于0.001wt%，且不大于2wt%，该第二添加剂的重量百分比不小于0.001wt%，且不大于2wt%，该第一添加剂选自铟、镓、锡、磷，及其中一组合，该第二添加剂选自铂、金、钇，及其中一组合。
本发明的用于半导体封装的银合金焊接导线，钯的重量百分比不大于1.5wt%。
本发明的用于半导体封装的银合金焊接导线，该第一添加剂选自镓、铟，及其组合。
本发明的用于半导体封装的银合金焊接导线，该第二添加剂选自铂、金、及其组合。
本发明的用于半导体封装的银合金焊接导线，该第一添加剂为镓及铟，该第二添加剂为金。
本发明的有益效果在于：银合金焊接导线整体的钯浓度小于2wt%，仍可通过银、钯、该第一添加剂，及该第二添加剂间的配合，除了降低银原子接近铝垫片的机会，并进一步增加焊合于该铝垫片后邻近该铝垫片的区域的钯浓度，进而有效阻挡易发生腐蚀的铝银介金属化合物的生成机率，并使银合金焊接导线焊合于该铝垫片时仍具有高可靠度。
具体实施方式
有关本发明的前述及其他技术内容、特点与功效，在以下一个较佳实施例的详细说明中，将可清楚的呈现。
本发明用于半导体封装的银合金焊接导线主要是电连接半导体芯片的一铝垫片及一印刷电路板的导电线路的一铝垫片，本发明银合金焊接导线是通过焊接的方式焊合于该铝垫片表面。
本发明用于半导体封装的银合金焊接导线的较佳实施例包含一银合金组份，包括银、钯、一第一添加剂，及一第二添加剂，基于该银合金组份的重量百分比为100wt%计，钯的重量百分比大于0且小于2wt%，该第一添加剂的重量百分比不小于0.001wt%，且不大于2wt%，该第二添加剂的重量百分比不小于0.001wt%，且不大于2wt%。
该第一添加剂选自铟、镓、锡、磷，及其中一组合，该第一添加剂所具备的特性在于其与银原子间的混合热为负值，则该第一添加剂与银原子的键结力高于铝原子与银原子间的键结力，使得该第一添加剂倾向与银原子结合，并减少银接近该铝垫片的机率，进而降低银合金焊接导线的银原子与该铝垫片的铝原子在两者间的界面处结合而形成易产生腐蚀效应的铝银介金属化合物的可能性；此外，当铝银介金属化合物被抑制时，接合界面因柯肯达尔效应(Kirkendall effect)所产生的不必要的孔洞也相对减少。
该第二添加剂选自铂、金、钇，及其中一组合，该第二添加剂，与银原子间的固溶度高，易形成固溶强化，使得银合金焊接导线接近铝垫片的区域产生较多移离第二添加剂后所形成的空缺(vacancy)，该空缺便能接受钯原子，进而使得该银合金焊接导线邻近该铝垫片的区域的钯原子浓度高于该银合金焊接导线远离该铝垫片的区域，进而降低铝银介金属化合物与焊接导线的银发生伽 凡尼腐蚀的机率。再者，该第二添加剂还具备辅助银抗氧化的特性。
该较佳实施例通过该第一添加剂与该第二添加剂的配合，在降低生成易发生柯肯达尔孔洞(Kirkendall void)的铝银介金属化合物量的同时，也提升该较佳实施例银合金焊接导线中邻近该铝垫片的区域的钯原子浓度，进而避免在银合金焊接导线与该铝垫片间的铝银介金属化合物造成伽凡尼腐蚀。
本发明的功效在于，就算本发明银合金焊接导线整体的钯浓度小于2wt%，仍可通过银、钯、该第一添加剂，及该第二添加剂间的配合，先抑制铝银介金属化合物的生成量，并进一步地利用邻近该铝垫片的银合金焊接导线的高钯浓度的区域，防止铝银化合物受腐蚀，进而使得本发明银合金焊接导线焊合于该铝垫片时仍具有高可靠度。
较佳地，该第一添加剂选自镓、铟，及其组合，且该第二添加剂选自铂、金，及其组合。
需说明的是，在该较佳实施例中，除了该银合金组份的钯、该第一添加剂，及该第二添加剂外，其余含量为银，且不以仅含有银为限。若需增进该银合金焊接导线的其他种类的物性，例如导电率或拉伸强度，也可视情况添加预定比例的合适的元素。
又，还需说明的是，目前的金属原料主要是经提炼制得，所以就算是纯银，以现今的提炼技术，仍然难以避免地含有微量无法分离的微量杂质，所以此处所称的银的纯度99.99%以上，并忽略其中的微量杂质；此外，钯、该第一添加剂，及该第二添加剂的纯度也是99.99%以上。
<具体例及其测试结果>
下表1为本发明用于半导体封装的银合金焊接导线的具体例1～11及比较例1～5的成分比例，及具体例与比较例所进行关于可靠度的测试结果。其中，可靠度的测试项目包含共有温度循环测试(temperature cycle test，简称TC)，及 高加速温湿应力测试(highly accelerated temperature and humidity stress test，简称HAST)。
具体例及比较例的制作方法主要是先以纯度大于99.99%的银、钯，及第一添加剂、第二添加剂为原料。
首先，先准备表1所列出的各原料的重量百分比例；接着，经连续铸造工艺而成径宽为8～10mm的银合金母线；继续，再对该银合金母线施以连续且数次的粗拉线工艺及中拉线工艺，该银合金母线的径面积较拉线工艺前的银合金母线的径面积缩小97%。
由于该银合金母线在受到不间断的拉扯，并被施予铸造工艺及拉线工艺等大量加工工艺后，该银合金母线也形成许多因内部累积大量的应力所造成的位错(dislocation)，使得该银合金母线硬化，而难以继续进行后续所必须的细拉线工艺。
所以为了消除位错，在细接线工艺前，先对该银合金母线进行温度为550℃的退火热处理。
继续，对该银合金母线依序施予连续的细拉线工艺及超细拉线工艺后，再进行再次消除应力产生的位错的热退火处理，此次热退火处理的温度为600℃。完成上述步骤后，便制得本发明银合金焊接导线。
以下说明具体例与比较例关于可靠度的测试方法。
[温度循环的测试方法]
首先，在以惰性气体为主的保护性气体环境中进行具体例与一铝垫片间的焊接工艺，共焊合完成50条焊接导线。
接着，将完成接合后的焊接导线放置于温控炉(或又称高温炉)中，并对所述焊接导线连续进行100次升降温循环步骤，每一个升降温循环步骤是先以每分钟15℃的升温速率将所述焊接导线升温至150℃，而后，再以每分钟15℃的 降温速率对所述焊接导线进行降温，直到所述焊接导线降温至-55℃。
然后，对所述完成100次升降温循环步骤的焊接导线进行推球测验。利用厂牌为DAGE，型号为dage4000的推球试验机进行测验，其推球试验机的推刀荷重为250g，当对该焊接导线进行推球测验所得到的推球值小于20g时，则判定失效。
在测验50条焊接导线后，以“◎”表示0条焊接导线失效；以“○”表示1条焊接导线失效；以“△”表示2～3条焊接导线失效；以“×”表示不小于4条焊接导线失效；其中，失效条数愈多，则可靠度愈低；0条焊接导线失效表示可靠度极佳；1条焊接导线失效表示可靠度较佳；2～3条焊接导线失效表示可靠度为普通程度；不小于4条焊接导线失效表示可靠度极差。
[高加速温湿应力的测试方法]
首先，在以惰性气体为主的保护性气体环境中进行具体例与一铝垫片间的焊接工艺，共焊合完成50条焊接导线。
接着，将完成接合后的焊接导线放置于温控炉(或又称高温炉)中，维持温度为120℃，相对湿度为100%，共放置168小时。
然后，对所述受到高温及高湿的焊接导线进行一推球测验。该推球测验及判定方法类似于[温度循环的测试方法]中的推球测验。
表1
由表1的具体例1～11可以了解，当钯大于0且小于2wt%，该第一添加剂不小于0.001wt%且不大于2wt%，且该第二添加剂不小于0.001wt%且不大于2wt%时，特别是当钯不小于0.001wt%且不大于1.5wt%，该第一添加剂不小于 0.5wt%且不大于1wt%时，该第二添加剂不小于0.001wt%且不大于2wt%时，关于可靠度的温度循环测试及高加速温湿应力测试至少为普通程度而适于焊接在该铝垫片上，并可达到极佳的程度。
更佳地，请参阅具体例8，当该第一添加剂为镓及铟，该第二添加剂为金时，更可供该温度循环测试及该高加速温湿应力测试的结果皆达到极佳的程度。
再者，在该具体例1～11中，已提出该第一添加剂选自镓、铟，及其组合，配合该第二添加剂选自铂、金，及其组合，确实供本发明低钯含量的银合金导线适于焊合在该铝垫片表上；其中，在此所称的低钯含量是钯的重量百分比小于2wt%，更佳地为不大于1.5wt%。
由比较例1～2可以了解，当不含钯，或钯的重量百分比不小于2wt%时，就算含有该第一添加剂及该第二添加剂，高加速温湿应力测试结果仍为极差，表示可靠度差而不适合作为焊接导线；由比较例3可以了解，当该第一添加剂及该第二添加剂的重量百分比小于0.001wt%时，甚或是不含该第一添加剂，及不含该第二添加剂时，关于可靠度的温度循环测试及高加速温湿应力测试的结果是极差的程度，此也表示，当钯的重量百分比小于2wt%时，该银合金焊接导线的银合金组份中必须含有特定比例的该第一添加剂及该第二添加剂，否则不适于作为银合金焊接导线；由比较例4可以了解，当该银合金焊接导线并非同时含有该第一添加剂及该第二添加剂，或该添加剂大于2wt%时，就算钯的重量百分比小于2wt%，仍然无法通过可靠度的测试；由比较例5可以了解，当该第一添加剂及该第二添加剂大于2wt%，及钯不小于2wt%时，关于可靠度的温度循环测试或高加速温湿应力测试的结果是倾向极差的程度，无法通过作为焊接导线时的可靠度测试。
除了上述温度循环测试及高加速温湿应力的测试外，可靠度也可以通过电 子显微镜(SEM)观察长时间摆放于高温高湿环境中已焊接于该铝垫片的银合金焊接导线的界面，当界面处孔隙愈少，表示可靠度较佳。
综上所述，本发明银合金焊接导线整体的钯浓度小于2wt%，仍可通过银、钯、该第一添加剂，及该第二添加剂间的配合，除了降低银原子接近铝垫片的机会，并进一步增加焊合于该铝垫片后邻近该铝垫片的区域的钯浓度，进而有效阻挡易发生腐蚀的铝银介金属化合物的生成机率，并使得本发明银合金焊接导线焊合于该铝垫片时仍具有高可靠度，所以确实能达成本发明的目的。
以上仅就本发明的具体构造实施例加予说明，在无违本发明的构造与精神下，凡精于本技术领域的人士，尚可做种种的变化与修饰，诸此变化与修饰尚视为涵盖在本案下列申请专利范围内。
Claims (5)
1.一种用于半导体封装的银合金焊接导线，其特征在于：该银合金焊接导线包含一银合金组份，该银合金组份包括银、钯、一第一添加剂，及一第二添加剂，基于该银合金组份的重量百分比为100wt%计，钯的重量百分比大于0且小于2wt%，该第一添加剂的重量百分比不小于0.001wt%，且不大于2wt%，该第二添加剂的重量百分比不小于0.001wt%，且不大于2wt%，该第一添加剂选自铟、镓、锡、磷，及其中一组合，该第二添加剂选自铂、金、钇，及其中一组合。
2.根据权利要求1所述用于半导体封装的银合金焊接导线，其特征在于：钯的重量百分比不大于1.5wt%。
3.根据权利要求1所述的用于半导体封装的银合金焊接导线，其特征在于：该第一添加剂选自镓、铟，及其组合。
4.根据权利要求3所述用于半导体封装的银合金焊接导线，其特征在于：该第二添加剂选自铂、金，及其组合。
5.根据权利要求4所述的用于半导体封装的银合金焊接导线，其特征在于：该第一添加剂为镓及铟，该第二添加剂为金。
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