TW201434052A - 用於半導體封裝的銀合金焊接導線 - Google Patents
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract
一種用於半導體封裝的銀合金焊接導線,包含一銀合金組份,包括銀、鈀、一第一添加劑,及一第二添加劑,基於該銀合金組份的重量百分比為100wt%計,鈀的重量百分比大於0且小於2wt%,該第一添加劑的重量百分比不小於0.001wt%,且不大於2wt%,該第二添加劑的重量百分比不小於0.001wt%,且不大於2wt%,該第一添加劑選自銦、鎵、錫、磷,及此等之一組合,該第二添加劑選自鉑、金、釔,及此等之一組合。本發明之銀合金焊接導線不需高濃度的鈀含量,仍於焊合於一鋁墊片後具備優良的可靠度。
Description
本發明是有關於一種焊接導線,特別是指一種用於半導體封裝的銀合金焊接導線。
打線(wire bonding)製程(又稱焊接導線製程)是半導體封裝製程技術領域中重要的一環,其主要是利用打線的方式,使得一焊接導線焊合於一半導體晶片的一金屬墊片(pad)表面,特別是一鋁墊片表面。
然而,當該焊接導線是以銀為主體之銀合金焊接導線時,焊合於該半導體晶片之鋁墊片表面的焊接導線與鋁之間的界面處易形成一層鋁銀介金屬化合物(Ag2Al)而該鋁銀介金屬化合物於潮溼且含水氣的環境易使焊接導線的銀發生伽凡尼腐蝕(Galvanic corrosion),導致該焊接導線形成於鋁墊片後之封裝成品的可靠度低落。
針對此問題,中國民國第201233817號專利公開案所揭示的內容主要利用整體焊接導線中含有高濃度的鈀,配合添加鈣、鑭、銪,及/或鈹等元素強化銀合金焊接導線的可靠性,其原理在於高濃度的鈀在焊接於該鋁墊片上時,將形成鈀濃化層,可抑制銀與氧化鋁受腐蝕的程
度。然而,該銀合金焊接導線中仍需含有4%以上的金,及至少2%以上之高濃度的鈀,才能於焊接於鋁墊片上時能通過基本的可靠性量測項目;該專利公開案也揭示,鈀的含量低於2wt%時,便無法抑制鋁銀介金屬化合物的生成而使得可靠度低,且金與鈀本身為貴重且價格高昂的金屬,故該專利公開案所揭示之銀合金焊接導線的成本非常高。
因此,發明人潛心研究低鈀含量及低金含量的銀合金焊接導線。
因此,本發明之目的,即在提供一種低鈀含量之用於半導體封裝的銀合金焊接導線。
於是,本發明用於半導體封裝的銀合金焊接導線,包含銀合金組份,包括銀、鈀、一第一添加劑,及一第二添加劑,基於該銀合金組份的重量百分比為100wt%計,鈀的重量百分比大於0且小於2%,該第一添加劑的重量百分比不小於0.001wt%,且不大於2wt%,該第二添加劑的重量百分比不小仿0.001wt%,且不大於2wt%,該第一添加劑選自銦、鎵、錫、磷,及此等之一組合,該第二添加劑選自鉑、金、釔,及此等之一組合。
較佳地,鈀的重量百分比不大於1.5wt%。
較佳地,該第一添加劑選自鎵、銦,及此等之組合。
較佳地,該第二添加劑選自鉑、金、及此等之
組合。
較佳地,該第一添加劑為鎵及銦,該第二添加劑為金。
有關本發明之前述及其他技術內容、特點與功效,在以下一個較佳實施例的詳細說明中,將可清楚的呈現。
本發明用於半導體封裝的銀合金焊接導線主要是電連接半導體晶片的一鋁墊片及一印刷電路板之導電線路的一鋁墊片,其中,本發明銀合金焊接導線是透過焊接的方式焊合於該鋁墊片表面。
本發明用於半導體封裝的銀合金焊接導線的較佳實施例包含一銀合金組份,包括銀、鈀、一第一添加劑,及一第二添加劑,基於該銀合金組份的重量百分比為100wt%計,鈀的重量百分比大於0且小於2wt%,該第一添加劑的重量百分比不小於0.001wt%,且不大於2wt%,該第二添加劑的重量百分比不小於0.001wt%,且不大於2wt%。
該第一添加劑選自銦、鎵、錫、磷,及此等之一組合,該第一添加劑所具備的特性在於其與銀原子間的混合熱為負值,則該第一添加劑與銀原子的鍵結力高於鋁原子與銀原子間的鍵結力,使得該第一添加劑傾向與銀原
子結合,並減少銀接近該鋁墊片的機率,進而降低銀合金焊接導線的銀原子與該鋁墊片的鋁原子於兩者間的界面處結合而形成易產生腐蝕效應之鋁銀介金屬化合物的可能性;此外,當鋁銀介金屬化合物被抑制時,接合介面因柯肯達爾效應(Kirkendall effect)所產生之不必要的孔洞也相對減少。
該第二添加劑選自鉑、金、釔,及此等之一組合,該第二添加劑,與銀原子間的固溶度高,易形成固溶強化,使得銀合金焊接導線接近鋁墊片的區域產生較多移離第二添加劑後所形成的空缺(vacancy),該空缺即能接受鈀原子,進而使得該銀合金焊接導線鄰近該鋁墊片的區域之鈀原子濃度高於該銀合金焊接導線遠離該鋁墊片的區域,進而降低鋁銀介金屬化合物與焊接導線的銀發生伽凡尼腐蝕的機率。再者,該第二添加劑還具備輔助銀抗氧化的特性。
該較佳實施例透過該第一添加劑與該第二添加劑的配合,在降低生成易發生柯肯達爾孔洞(Kirkendall void)之鋁銀介金屬化合物量的同時,亦提升該較佳實施例銀合金焊接導線中鄰近該鋁墊片之區域的鈀原子濃度,進而避免於銀合金焊接導線與該鋁墊片間的鋁銀介金屬化合物造成伽凡尼腐蝕。
本發明的功效在於,即便本發明銀合金焊接導線整體之鈀濃度小於2wt%,仍可透過銀、鈀、該第一添加劑,及該第二添加劑間的配合,先抑制鋁銀介金屬化合
物的生成量,並進一步地利用鄰近該鋁墊片之銀合金焊接導線的高鈀濃度的區域,防止少量之鋁銀化合物受腐蝕,進而使得本發明銀合金焊接導線焊合於該鋁墊片時仍具有高可靠度。
較佳地,該第一添加劑自選鎵、銦,及此等之組合,且該第二添加劑選自鉑、金,及此等之組合。
需說明的是,在該較佳實施例中,除了該銀合金組份的鈀、該第一添加劑,及該第二添加劑外,其餘含量為銀,且不以僅含有銀為限。若需增進該銀合金焊接導線的其他種類的物性,例如導電率或拉伸強度,也可視情況添加預定比例之合適的元素。
又,還需說明的是,目前的金屬原料主要是經提煉製得,故即使是純銀,以現今之提煉技術,仍然難以避免地含有微量無法分離的微量雜質,故此處所稱之銀的純度約99.99%以上,並忽略其中的微量雜質;除此之外,鈀、該第一添加劑,及該第二添加劑的純度也是約99.99%以上。
下表1為本發明用於半導體封裝的銀合金焊接導線的具體例1~11及比較例1~5的成分比例,及具體例與比較例所進行關於可靠度的測試結果。其中,可靠度的測試項目包含共有溫度循環測試(temperature cycle test,簡稱TC),及高加速溫濕應力測試(highly accelerated temperature and humidity stress test,簡稱HAST)。
具體例及比較例的製作方法主要是先以純度大於99.99%的銀、鈀,及第一、二添加劑為原料。
首先,先準備表1所列出之各原料的重量百分比例;接著,經連續鑄造製程而成徑寬約為8~10mm的銀合金母線;繼續,再對該銀合金母線施以連續且數次的粗拉線製程及中拉線製程,該銀合金母線的徑面積較拉線製程前之銀合金母線的徑面積縮小約97%。
由於該銀合金母線在受到不間斷的拉扯,並被施予鑄造製程及拉線製程等大量加工製程後,該銀合金母線也形成許多因內部累積大量的應力所造成的差排(dislocation),使得該銀合金母線硬化,而難以繼續進行後續所必須的細拉線製程。
故為了消除差排,在細接線製程前,先對該銀合金母進進行約溫度約為550℃,的退火熱處理。
繼續,對該銀合金母線依序施予連續的細拉線製程及超細拉線製程後,再進行再次消除應力產生之差排的熱退火處理,此次熱退火處理的溫度約為600℃。完成上述步驟後,即製得本發明銀合金焊接導線。
以下說明具體例與比較例關於可靠度的測試方法。
首先,於以鈍氣為主的保護性氣體環境中進行具體例與一鋁墊片間的焊接製程,共焊合完成50條焊接導線。
接著,將完成接合後的焊接導線放置於溫控爐(或又稱高溫爐)中,並對該等焊接導線連續進行100次升降溫循環步驟,每一個升降溫循環步驟是先以每分鐘15℃的升溫速率將該等焊接導線升溫至150℃,而後,再以每分鐘15℃的降溫速率對該等焊接導線進行降溫,直到該等焊接導線降溫至-55℃。
然後,對該等完成100次升降溫循環步驟的焊接導線進行推球測驗。利用廠牌為DAGE,型號為dage 4000的推球試驗機進行測驗,其推球試驗機的推刀荷重為250g,當對該焊接導線進行推球測驗所得到的推球值小於20g時,則判定失效。
在測驗50條焊接導線後,以「◎」表示0條焊接導線失效;以「○」表示1條焊接導線失效;以「△」表示2~3條焊接導線失效;以「×」表示不小於4條焊接導線失效;其中,失效條數愈多,則可靠度愈低;0條焊接導線失效表示可靠度極佳;1條焊接導線失效表示可靠度較佳;2~3條焊接導線失效表示可靠度為普通程度;不小於4條焊接導線失效表示可靠度極差。
首先,於以鈍氣為主的保護性氣體環境中進行具體例與一鋁墊片間的焊接製程,共焊合完成50條焊接導線。
接著,將完成接合後的焊接導線放置於溫控爐(或又稱高溫爐)中,維持溫度為120℃,相對溼度為
100%,共放置168小時。
然後,對該等受到高溫及高溼的焊接導線進行一推球測驗。該推球測驗及判定方法類似於[溫度循環的測試方法]中的推球測驗。
表1
由表1的具體例1~11可以瞭解,當鈀大於0
且小於2wt%,該第一添加劑不小於0.001wt%且不大於2wt%,且該第二添加劑不小於0.001wt%且不大於2wt%時,特別是當鈀不小於0.001wt%且不大於1.5wt%,該第一添加劑不小於0.5wt%且不大於1wt%時,該第二添加劑不小於0.001wt%且不大於2wt%時,關於可靠度之溫度循環測試及高加速溫濕應力測試至少為普通程度而適於焊接在該鋁墊片上,並可達到極佳的程度。
更佳地,請參閱具體例8,當該第一添加劑為鎵及銦,該第二添加劑為金時,更可供該溫度循環測試及該高加速溫濕應力測試的結果皆達到極佳的程度。
再者,在該具體例1~11中,已提出該第一添加劑選自鎵、銦,及此等之組合,配合該第二添加劑選自鉑、金,及此等之組合,確實供本發明低鈀含量的銀合金導線適於焊合在該鋁墊片表上;其中,在此所稱之低鈀含量是鈀的重量百分比小於2wt%,更佳地為不大於1.5wt%。
由比較例1~2可以瞭解,當不含鈀,或鈀的重量百分比不小於2wt%時,即便含有該第一添加劑及該第二添加劑,高加速溫濕應力測試結果仍為極差,表示可靠度差而不適合作為焊接導線;由比較例3可以瞭解,當該第一添加劑及該第二添加劑的重量百分比小於0.001wt%時,甚或是不含該第一添加劑,及不含該第二添加劑時,關於可靠度之溫度循環測試及高加速溫濕應力測試的結果
是極差的程度,此也表示,當鈀的重量百分比小於2wt%時,該銀合金焊接導線之銀合金組份中必須含有特定比例之該第一添加劑及該第二添加劑,否則不適於作為銀合金焊接導線;由比較例4可以瞭解,當該銀合金焊接導線並非同時含有該第一添加劑及該第二添加劑,或該添加劑大於2wt%時,即便鈀的重量百分比小於2wt%,仍然無法通過可靠度的測試;由比較例5可以瞭解,當該第一添加劑及該第二添加劑大於2wt%,及鈀不小於2wt%時,關於可靠度之溫度循環測試或高加速溫濕應力測試的結果是傾向極差的程度,無法通過作為焊接導線時的可靠度測試。
除了上述溫度循環測試及高加速溫濕應力的測試外,可靠度也可以透過電子顯微鏡(SEM)觀察長時間擺放於高溫高溼環境中已焊接於該鋁墊片的銀合金焊接導線之界面,當界面處孔隙愈少,表示可靠度較佳。
綜上所述,本發明銀合金焊接導線整體之鈀濃度小於2wt%,仍可透過銀、鈀、該第一添加劑,及該第二添加劑間的配合,除了降低銀原子接近鋁墊片的機會,並進一步增加焊合於該鋁墊片後鄰近該鋁墊片的區域的鈀濃度,進而有效阻擋易發生腐蝕之鋁銀介金屬化合物的生成機率,並使得本發明銀合金焊接導線焊合於該鋁墊片時仍具有高可靠度,故確實能達成本發明之目的。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申
請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。
Claims (5)
- 一種用於半導體封裝的銀合金焊接導線,包含:一銀合金組份,包括銀、鈀、一第一添加劑,及一第二添加劑,基於該銀合金組份的重量百分比為100wt%計,鈀的重量百分比大於0且小於2wt%,該第一添加劑的重量百分比不小於0.001wt%,且不大於2wt%,該第二添加劑的重量百分比不小於0.001wt%,且不大於2wt%,該第一添加劑選自銦、鎵、錫、磷,及此等之一組合,該第二添加劑選自鉑、金、釔,及此等之一組合。
- 如請求項1所述的用於半導體封裝的銀合金焊接導線,其中,鈀的重量百分比不大於1.5wt%。
- 如請求項1所述的用於半導體封裝的銀合金焊接導線,其中,該第一添加劑選自鎵、銦,及此等之組合。
- 如請求項3所述的用於半導體封裝的銀合金焊接導線,其中,該第二添加劑選自鉑、金,及其等之組合。
- 如請求項4所述的用於半導體封裝的銀合金焊接導線,其中,該第一添加劑為鎵及銦,該第二添加劑為金。
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US11342299B2 (en) | 2016-04-28 | 2022-05-24 | Nippon Micrometal Corporation | Bonding wire for semiconductor devices |
TWI788732B (zh) * | 2019-11-22 | 2023-01-01 | 日商日鐵化學材料股份有限公司 | 半導體裝置用Ag合金接合線 |
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CN106783647B (zh) * | 2016-12-28 | 2019-04-19 | 河南理工大学 | 一种耐腐蚀键合合金线及其制备方法 |
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US11342299B2 (en) | 2016-04-28 | 2022-05-24 | Nippon Micrometal Corporation | Bonding wire for semiconductor devices |
TWI788732B (zh) * | 2019-11-22 | 2023-01-01 | 日商日鐵化學材料股份有限公司 | 半導體裝置用Ag合金接合線 |
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