JP6432074B2 - 半導体接続のCuピラー用円柱状形成物 - Google Patents
半導体接続のCuピラー用円柱状形成物 Download PDFInfo
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- JP6432074B2 JP6432074B2 JP2016545657A JP2016545657A JP6432074B2 JP 6432074 B2 JP6432074 B2 JP 6432074B2 JP 2016545657 A JP2016545657 A JP 2016545657A JP 2016545657 A JP2016545657 A JP 2016545657A JP 6432074 B2 JP6432074 B2 JP 6432074B2
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/01016—Sulfur [S]
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- H01L2924/01017—Chlorine [Cl]
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- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Wire Bonding (AREA)
- Electroplating Methods And Accessories (AREA)
Description
(1)Cuを主成分とし、(a)Pd、Pt、Au、Niの1種又は2種以上を総計で0.1質量%以上5.0質量%以下、(b)Tiを3質量ppm以上15質量ppm以下、(c)Pを5質量ppm以上150質量ppm以下、のうち(a)〜(c)の一または二以上を満たし、直径が50〜100μmの円柱形状であり、該円柱の高さ/直径比が2.0以上であり、半導体接続のCuピラーとして用いることを特徴とする円柱状形成物。
(2)Cuを主成分とし、(a)Pd、Pt、Au、Niの1種又は2種以上を総計で0.1質量%以上5.0質量%以下、(b)Tiを3質量ppm以上15質量ppm以下、(c)Pを5質量ppm以上150質量ppm以下、のうち(a)〜(c)の一または二以上を満たし、直径が100〜400μmの円柱形状であり、半導体接続のCuピラーとして用いることを特徴とする円柱状形成物。
(3)円柱の高さが200〜800μmであることを特徴とする上記(2)に記載の円柱状形成物。
(4)前記円柱状形成物に不純物として含まれるS含有量とCl含有量の総計が1質量ppm以下であることを特徴とする上記(1)〜(3)のいずれか一項に記載の円柱状形成物。
表1に示す成分と残部Cu及び不可避不純物からなるCu製円柱状形成物を作成した。Cu純度が6Nである高純度銅に添加元素を必要な濃度含有した銅合金を溶解により作製し、その後に炉中で徐冷してインゴットを作製した。インゴット表面の洗浄のため、酸洗浄及び水洗し、乾燥させた。ICP分析によって含有成分を測定した。
表1の実施例1の成分と実施例23の成分について、Cuピラーのサイズ、直径50μm〜400μm、高さ100μm〜800μmの範囲で、(実施例1)と同様の試験を実施した。
2 Cuピラー
3 半導体チップ
4 電極
5 SnAgペースト
6 半導体パッケージ
7 電極
8 はんだバンプ
11 上面
12 底面
13 側面
Claims (4)
- Cuを主成分とし、(a)Pd、Pt、Au、Niの1種又は2種以上を総計で0.1質量%以上5.0質量%以下、(b)Tiを3質量ppm以上15質量ppm以下、(c)Pを5質量ppm以上150質量ppm以下、のうち(a)〜(c)の一または二以上を満たし、直径が50〜100μmの円柱形状であり、該円柱の高さ/直径比が2.0以上であり、半導体接続のCuピラーとして用いることを特徴とする円柱状形成物。
- Cuを主成分とし、(a)Pd、Pt、Au、Niの1種又は2種以上を総計で0.1質量%以上5.0質量%以下、(b)Tiを3質量ppm以上15質量ppm以下、(c)Pを5質量ppm以上150質量ppm以下、のうち(a)〜(c)の一または二以上を満たし、直径が100〜400μmの円柱形状であり、半導体接続のCuピラーとして用いることを特徴とする円柱状形成物。
- 円柱の高さが200〜800μmであることを特徴とする請求項2に記載の円柱状形成物。
- 前記円柱状形成物に不純物として含まれるS含有量とCl含有量の総計が1質量ppm以下であることを特徴とする請求項1〜3のいずれか一項に記載の円柱状形成物。
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JP2014175507 | 2014-08-29 | ||
PCT/JP2015/074525 WO2016031989A1 (ja) | 2014-08-29 | 2015-08-28 | 半導体接続のCuピラー用円柱状形成物 |
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US (1) | US11101234B2 (ja) |
EP (1) | EP3188222B1 (ja) |
JP (1) | JP6432074B2 (ja) |
KR (3) | KR20170033393A (ja) |
CN (1) | CN106796895B (ja) |
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CN109788643A (zh) * | 2017-11-10 | 2019-05-21 | 泰连公司 | 铝基可焊接的触头 |
JP2020004816A (ja) | 2018-06-27 | 2020-01-09 | Dic株式会社 | ピラー形成用導電ペースト |
JP7228086B2 (ja) | 2018-07-26 | 2023-02-24 | Dic株式会社 | 導電性ペーストを用いた導電性ピラーの製造方法 |
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TW503546B (en) | 2000-10-13 | 2002-09-21 | Ngk Spark Plug Co | Pin standing resin-made substrate, method of making pin standing resin-made substrate, pin and method of making pin |
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DE102004010040A1 (de) * | 2004-03-02 | 2005-09-15 | Norddeutsche Affinerie Ag | Kupferdraht sowie Verfahren und Vorrichtung zur Herstellung eines Kupferdrahtes |
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TWI760293B (zh) | 2022-04-11 |
CN106796895B (zh) | 2020-01-03 |
US11101234B2 (en) | 2021-08-24 |
WO2016031989A1 (ja) | 2016-03-03 |
KR20170033393A (ko) | 2017-03-24 |
TW201613057A (en) | 2016-04-01 |
KR20180130009A (ko) | 2018-12-05 |
JPWO2016031989A1 (ja) | 2017-06-22 |
CN106796895A (zh) | 2017-05-31 |
KR20200121923A (ko) | 2020-10-26 |
EP3188222A4 (en) | 2018-04-18 |
US20170287861A1 (en) | 2017-10-05 |
EP3188222A1 (en) | 2017-07-05 |
EP3188222B1 (en) | 2022-03-16 |
KR102344790B1 (ko) | 2021-12-30 |
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