CN101386930B - 键合铜线制造方法 - Google Patents

键合铜线制造方法 Download PDF

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CN101386930B
CN101386930B CN2007101130040A CN200710113004A CN101386930B CN 101386930 B CN101386930 B CN 101386930B CN 2007101130040 A CN2007101130040 A CN 2007101130040A CN 200710113004 A CN200710113004 A CN 200710113004A CN 101386930 B CN101386930 B CN 101386930B
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copper wire
annealing
welding
zone
ingot
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CN101386930A (zh
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曹颜顺
程寿明
高士龙
王超
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Jiangsu Tri-M Special Metals Co.,Ltd.
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SHANDONG HUAHONG MICROELECTRONIC MATERIAL TECHNOLOGY Co Ltd
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Abstract

一种半导体器件键合铜线制造方法，它涉及一种电子器件封装引线材料。是一种为代替高成本键合金线而发明的半导体器件键合铜线制造方法，该方法是将6NCu，经区熔精炼制得脱S区熔精炼DHPCu锭。再加Be，Ge，In，Ag，Ca等元素之中的一个以上，分别熔化、铸锭，再经轧制、退火，扒皮、拉伸加工、退火，反复进行直到Φ25μm，最后在保护气氛下退火，制得本发明线。具体工艺方法：6NCu脱S区域精炼-掺杂-轧制-拉伸加工-保护气氛下退火处理-成品检验、包装、入库。本发明克服了工业纯铜线硬度高，焊接时易压碎硅片；高纯铜线受热时晶粒粗大，球焊时易产生球颈断裂，焊弧不稳定等缺陷，提高了焊接强度和焊接可靠性。为长弧焊接、多层板布线、多引脚高密度线球焊封装技术提供了重要条件。

Description

键合铜线制造方法
技术领域
本发明涉及一种电子器件封装引线材料。
背景技术
在半导体IC封装中，芯片和引线框架(基板)的连接要靠引线来实现，这种引线材料通常按照焊接方法的不同，可以分为二种：一种是球焊用高纯金线，另一种是超声波楔形焊铝线。前者焊接速度高，无方向性，可靠性好。因而树脂封装的半导体器件中95％是采用高纯金线作引线。我国2006年用金线(直径25μm)量为12.25吨，预计2007年为13.87吨，2008年15.4吨，2009年为16.9吨。即每年以10％的速度增长。金是贵金属，金价不断上涨，金线的制造成本随之增加，它极大地影响着半导体器件制造成本。同时，用金线作引线，金线压焊在硅片的铝膜上，在金与铝的界面上，由于AuAl2等脆性化合物的生成并成长快，形成卡肯多尔空穴而脆化，使高温长时间可靠性降低。另外，金线的耐热性差，容易在金球上端断裂。因此，为了降低引线的成本和缓解焊接表面在升温过程中的变化，已经展开了用Al，Ag，Pd，Cu代替Au的研究。
现在，用铜代替金，铜与金相比，不仅制造成本低，而且导电性好(铜比金高30％)，强度高(铜比金高40％)，接触电阻小，金属间相生长慢，显示出比其它材料更优良的性能。但是，用一般的铜代替作球焊线，由于铜比金硬，即使用5NCu，在焊接过程中也会使铝膜下的Si片损坏。为了降低铜的硬度，须将含50-100ppm杂质的铜提纯，使其杂质含量降到1ppm以下(6NCu，Cu％≥99.9999％)，但是，即是采用重电解的更高纯度的铜(6NCu)，也由于其S含量较多，为0.6ppm，它对高纯度铜的硬度和变形抗力产生大的影响，通过添加脱S元素后的区熔精炼得到的DHPCu，(S＜0.1ppm)这种铜具有低的硬度和低的再结晶温度，此时铜线坯的硬度Hv在32-43之间，与金的硬度Hv(30-40)接近，用这种铜制成的线，高速球焊时避免了Si的损伤。但是这种纯DHPCu，线，在30℃以下的室温就会发生再结晶，其破断力会随存放时间而下降，延伸率会增加，性能改变，而且，在球焊时靠近铜球上端的晶粒易粗大，尺寸几乎接近线径，造成焊弧形状稳定性不好。
发明内容
本发明的目的是：提供一种半导体器件键合铜线的制造方法，即以外购6NCu为原料，经过独有的区域熔炼工艺得到超高纯度铜，再添加微量元素并经特殊的加工方法制得新型的键合铜线，使之既能控制晶粒粗大，又能改善焊弧的性能。
本发明解决其技术问题所采用的技术方案是：将6NCu，经脱S区熔精炼制得DHPCu锭。再加Be，Ge，In，Ag，Ca等元素之中的一个以上的成分配料，熔化、铸锭，经轧制、退火，扒皮、拉伸加工、再退火，反复进行直到￠25μm，最后在保护气氛下退火，制得本发明线材，所用原料组分：6Ncu99.9999-99.99999％、添加高纯Be，Ge，In，Ag，Ca和La中的1种或2种以上，含量在0.00001-0.0001％之间。
其制备工艺：
1、区熔精炼：
以高纯铜(6NCu)为原料，在高频真空感应电炉中，熔炼出含(0.1-1ppm)La脱S元素铸锭，放入自制的透明石英管中，抽真空保持1.3×10-3Pa，再置于高频线圈加热，功率18-22kw频率235-260kHz。熔融宽度30±10mm，熔融区移动速度为1.3-1.8mm/min，进行3次精炼，制得脱S区熔精炼DHPCu锭。
2、掺杂：
用区熔精炼纯铜(DHPCu)掺加(0.1-1ppm)Be，Ge，In，Ag，Ca等元素之中的一个以上，在高频真空感应炉熔化，铸锭。
3、轧制：
按道次加工率7％-9％轧制到￠7.5mm，经350-450℃真空退火。
4、拉伸加工：
扒皮到￠7mm，进一步经90-99.5％的拉伸加工，350-450℃真空退火，反复进行直到￠25μm。
5、保护气氛下退火处理：
最后在Ar气保护下经250-400℃退火，达到所要求的性能，制成本发明线。
6、成品检验、包装、入库。
采用本发明的积极效果是：采用本发明制造方法所制成的键合铜线既克服了工业纯铜线硬度高，焊接时易压碎硅片；又避免了高纯铜线受热时晶粒粗大，球焊时易产生球颈断裂，焊弧不稳定等缺陷。与目前广泛使用的Au线相比，提高了焊接强度和焊接可靠性，大大地降低了成本。经批量焊接、塑封，老化，测试，其机械性能与金线相比，强度大，导电性高，延伸率高，有较宽的良好焊接区域，并且其球颈强度比金线高，保证了焊接的稳定性，为长弧焊接、多层板布线、多引脚高密度线球焊封装技术提供了重要条件。
具体实施方式
以生产￠25μm键合铜线为例：
1、区熔精炼：
以高纯铜(6NCu)为原料，先在功率30kw频率10kHz高频真空电炉中，用6NCu熔炼出含1ppm La脱S元素铸锭，尺寸为19mm×20mm×250mm。放入自制的透明石英管中，抽真空保持1.3×10-3Pa，再置于高频线圈加热，功率20kw频率250kHz。熔融宽度30±10mm，熔融区移动速度为1.5mm/min，进行3次精炼，制得脱S区熔精炼DHPCu锭。
2、掺杂：
用脱S区熔精炼高纯铜(DHPCu)掺杂如下表1成分，在高频真空感应炉熔化，铸锭。
表1化学成分及性能
Figure GSB00000334739500031
3、轧制：
按道次加工率8％轧制到￠7.5mm，经350℃真空退火。
4、拉伸加工：
扒皮到￠7.0mm，进一步经90％-99.5％的拉伸加工，350℃真空退火，反复进行直到￠25μm。
5、保护气氛下退火处理：
最后在Ar气保护下经350℃退火，达到所要求的性能(如表1)，制成本发明线。
6、成品检验、包装、入库。

Claims (1)

1.一种键合铜线制造方法，其特征是将6NCu，经脱S区熔精炼制得DHPCu锭，再添加Ga，Mg，Be，Ge，In，Ag，Ca元素中的一个以上，分别熔化、铸锭，经轧制、退火，扒皮、拉伸加工、再退火，反复进行直到φ25μm，最后在保护气氛下退火，制得本键合铜线；
所用原料组分：6NCu99.9999-99.99999％、添加高纯Ga，Mg，Be，Ge，In，Ag，Ca和La元素中的一个以上，含量在0.1-1ppm之间；其制备工艺：
(1)区熔精炼：
以高纯铜6NCu为原料，在高真空电炉中，熔炼出含0.1-1ppmLa脱S元素铸锭，放入自制的透明石英管中，抽真空保持1.3×10-3Pa，再置于高频线圈加热，功率18-22kw频率235-260kHz，熔融宽度30±10mm，熔融区移动速度为1.3-1.8mm/min，进行3次精炼，制得脱S区熔精炼DHPCu锭；
(2)掺杂：
用脱S区熔精炼高纯铜DHPCu锭掺加0.1-1ppmGa，Mg，Be，Ge，In，Ag，Ca元素之中的一个以上，在高频真空感应炉熔化，铸锭；
(3)轧制：
按道次加工率7％-9％轧制到φ7.5mm，经350-450℃真空退火；
(4)拉伸加工：
扒皮到φ7mm，进一步经90-99.5％的拉伸加工，350-450℃真空退火，反复进行直到φ25μm；
(5)保护气氛下退火处理：
最后在Ar气保护下经250-400℃退火，达到所要求的性能，制得本键合铜线；
(6)成品检验、包装、入库。
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