CN103199073A - 银钯合金单晶键合丝及其制造方法 - Google Patents

银钯合金单晶键合丝及其制造方法 Download PDF

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CN103199073A
CN103199073A CN2013100814325A CN201310081432A CN103199073A CN 103199073 A CN103199073 A CN 103199073A CN 2013100814325 A CN2013100814325 A CN 2013100814325A CN 201310081432 A CN201310081432 A CN 201310081432A CN 103199073 A CN103199073 A CN 103199073A
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silver
single crystal
palladium alloy
bonding wire
purity
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CN103199073B (zh
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徐云管
彭庶瑶
梁建华
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JIANGXI LAN WEI ELECTRONIC TECHNOLOGY Co Ltd
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JIANGXI LAN WEI ELECTRONIC TECHNOLOGY Co Ltd
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Abstract

本发明公开了一种银钯合金单晶键合丝及其制造方法，其组成键合丝的材料各成分重量百分比为：银含量为99.9868%—99.9943%、钯含量为0.003%—0.008%、铜含量为0.002%—0.004%、钙含量为0.0001%—0.0003%、铍含量为0.0006%—0.0009%；该键合丝价格比较低廉、电气性能优异、抗氧化性能好、性能稳定可靠；可替代用于中低端LED封装、半导体器件、IC封装领域的键合金丝、镀金键合铜丝。

Description

银钯合金单晶键合丝及其制造方法
技术领域
本发明涉及微电子后道封装工序用金属键合丝及其制造方法，尤其涉及一种银钯合金单晶键合丝及其制造方法。
背景技术
目前用于集成电路、半导体分立器件等领域的引线封装键合丝最为广泛采用的是黄金类键合丝。由于黄金属贵重金属，价格昂贵且日益上涨，给用量最大的中低端LED、IC封装带来沉重的成本压力。因而，业界急需成本相对低廉、性能稳定可靠的新型键合丝材料用以取代黄金类键合丝。
目前国内用于替代黄金类键合丝的研究应用大多集中于铜基键合丝，但这类键合丝也有它的不足之处：①铜丝在拉制过程中因加工硬化，使得难以拉制与黄金键合丝一样细的微细线径；②由于铜丝过硬，会导致第一焊点容易逃丝，使得键合操作频繁中断，给下道工序的集成电路封装造成较大的困难；③由于铜丝具有易氧化的特性，在保存及焊接过程中容易产生氧化，打开包装后必须尽快用完，而且使用时必须加氮氢混合气体加以保护，使得操作危险性增加。
发明内容
本发明为了解决其技术问题所采用的技术方案是：一种银钯合金单晶键合丝，组成键合丝的材料各成分重量百分比为：钯（Pd）占0.003%—0.008%、铜（Cu）占0.002%—0.004%、钙（Ca）占0.0001%—0.0003%、铍（Be）占0.0006%—0.0009%，其余为银，之和等于100%。要求银的纯度大于99.9999%、钯的纯度大于99.999%，铜的纯度大于99.9995%，钙的纯度99.0%—99.5%，铍的纯度大于99.999%。
本发明的技术方案通过以下制造方法或工艺予以解决：
①提取高纯银：将1号银（IC—Ag99.99）作为阳极浸入电解液中，以高纯银箔作为阴极浸入电解液中；在阳极、阴极之间输入（7—9）V、（2.5—3.5）A的直流电，以补充新鲜电解液方式维持电解液温度不超过60℃，待阴极积聚一定重量的纯度大于99.9999%的高纯银时，及时更换高纯银，再经清洗、烘干备用。
②制备成银合金铸锭：提取纯度大于99.9999%的高纯银，然后加入钯、铜、钙、铍，成分含量按照重量百分比分别为钯占0.003%—0.008%、铜占0.002%—0.004%、钙占0.0001%—0.0003%、铍占0.0006%—0.0009%，其余为银。这些金属经机械混合后放入高纯石墨坩埚中，在惰性气体保护条件下使用感应电炉使其熔化，进而制备成银合金铸锭。
③连铸成铸态银钯合金单晶母线：将制备好的银合金铸锭加入有氮气保护的水平连铸金属单晶连铸室，应用中频感应加热至（1100—1150）℃，待完全熔化、精炼和除气后，将熔液注入连铸室中间的储液池保温，在维持（2—5）L/ min净化氮气流量的连铸室中，完成对银钯合金熔液的水平单晶连铸，得到ф3mm左右的铸态银钯合金单晶母线。
④粗拔：将ф3mm左右的银钯合金单晶母线拉拔成直径为1mm左右的银钯合金单晶丝。
⑤热处理：将直径为1mm左右的银钯合金单晶丝进行退火处理。
⑥精拔：将经退火处理的银钯合金单晶丝精密拉拔成不同规格的（0.013mm—0.050mm）银钯合金单晶键合丝。
⑦热处理：将精拔后的银钯合金单晶键合丝进行退火处理。
⑧表面清洗：将退火处理后的银钯合金单晶键合丝先经酸液清洗，然后经超声波清洗，再经高纯水清洗、烘干。
⑨分卷：将成品银钯合金单晶键合丝进行复绕、分卷、包装。
本发明的技术效果是：该键合丝价格比较低廉、电气性能优异、抗氧化性能好、性能稳定可靠；可替代用于中低端LED封装、半导体器件、IC封装领域的键合金丝、镀金键合铜丝。
具体实施方式
实施例1
本发明是这样实现的，一种银钯合金单晶键合丝，组成该键合丝的材料由下列重量百分比的原材料组成：钯（Pd）占0.003%、铜（Cu）占0.002%、钙（Ca）占0.0001%、铍（Be）占0.0006%，其余为银，之和等于100%；要求银的纯度大于99.9999%、铜的纯度大于99.9995%，钯的纯度大于99.999%，钙的纯度99.0%—99.5%，铍的纯度大于99.999%。
银钯合金单晶键合丝的制造方法：银钯合金单晶键合丝的制作工艺步骤和方法如下：
①提取高纯银：以国家标准GB/T 4135中1号银（IC-Ag99.99）为基材，提取纯度大于99.9999%的高纯银，经清洗、烘干备用。
②制备成银合金铸锭：按实施例1前述相关规定要求，在高纯银内加入高纯钯、铜、钙、铍，这些金属经机械混合后放入高纯石墨坩埚中，在惰性气体保护条件下使用感应电炉使其熔化，进而制备成银合金铸锭。
③连铸成铸态银钯合金单晶母线：将制备好的银合金铸锭加入有氮气保护的水平连铸金属单晶连铸室，应用中频感应加热、熔化、精炼和除气后，将熔液注入储液池保温，完成对银钯合金熔液的水平单晶连铸，得到ф3mm左右、纵向和横向晶粒数均为1个的铸态银钯合金单晶母线。
④粗拔：将ф3mm的银钯合金单晶母线拉拔成直径为1mm左右的银钯合金单晶丝。
⑤热处理：将直径为1mm左右的银钯合金单晶丝进行退火。
⑥精拔：将直径为1mm左右的银钯合金单晶丝精密拉拔成直径分别为13μm—50μm的成品银钯合金单晶键合丝。
⑦热处理：将精拔后的银钯合金单晶键合丝进行退火。
⑧表面清洗：先用稀释后的酸液对键合丝进行酸洗，然后经超声波清洗，再经高纯水清洗、烘干。
⑨分卷：将成品银钯合金单晶键合丝进行复绕、分卷、包装。
实施例2
本发明是这样实现的，一种银钯合金单晶键合丝，组成该键合丝的材料由下列重量百分比的原材料组成：钯（Pd）占0.008%、铜（Cu）占0.004%、钙（Ca）占0.0003%、铍（Be）占0.0009%，其余为银，之和等于100%；要求银的纯度大于99.9999%、铜的纯度大于99.9995%，钯的纯度大于99.999%，钙的纯度99.0%—99.5%，铍的纯度大于99.999%。
银钯合金单晶键合丝的制造方法：银钯合金单晶键合丝的制作工艺步骤和方法如下：
①提取高纯银：以国家标准GB/T 4135中1号银（IC-Ag99.99）为基材，提取纯度大于99.9999%的高纯银，经清洗、烘干备用。
②制备成银合金铸锭：按实施例2前述相关规定要求，在高纯银内加入高纯钯、铜、钙、铍，这些金属经机械混合后放入高纯石墨坩埚中，在惰性气体保护条件下使用感应电炉使其熔化，进而制备成银合金铸锭。
③连铸成铸态银钯合金单晶母线：将制备好的银合金铸锭加入有氮气保护的水平连铸金属单晶连铸室，应用中频感应加热、熔化、精炼和除气后，将熔液注入储液池保温，完成对银钯合金熔液的水平单晶连铸，得到ф3mm左右、纵向和横向晶粒数均为1个的铸态银钯合金单晶母线。
④粗拔：将ф3mm的银钯合金单晶母线拉拔成直径为1mm左右的银钯合金单晶丝。
⑤热处理：将直径为1mm左右的银钯合金单晶丝进行退火。
⑥精拔：将直径为1mm左右的银钯合金单晶丝精密拉拔成直径分别为13μm—50μm的成品银钯合金单晶键合丝。
⑦热处理：将精拔后的银钯合金单晶键合丝进行退火。
⑧表面清洗：先用稀释后的酸液对键合丝进行酸洗，然后经超声波清洗，再经高纯水清洗、烘干。
⑨分卷：将成品银钯合金单晶键合丝进行复绕、分卷、包装。
实施例3
本发明是这样实现的，一种银钯合金单晶键合丝，组成该键合丝的材料由下列重量百分比的原材料组成：钯（Pd）占0.005%、铜（Cu）占0.003%、钙（Ca）占0.0002%、铍（Be）占0.0007%，其余为银，之和等于100%；要求银的纯度大于99.9999%、铜的纯度大于99.9995%，钯的纯度大于99.999%，钙的纯度99.0%—99.5%，铍的纯度大于99.999%。
银钯合金单晶键合丝的制造方法：银钯合金单晶键合丝的制作工艺步骤和方法如下：
①提取高纯银：以国家标准GB/T 4135中1号银（IC-Ag99.99）为基材，提取纯度大于99.9999%的高纯银，经清洗、烘干备用。
②制备成银合金铸锭：按实施例3前述相关规定要求，在高纯银内加入高纯钯、铜、钙、铍，这些金属经机械混合后放入高纯石墨坩埚中，在惰性气体保护条件下使用感应电炉使其熔化，进而制备成银合金铸锭。
③连铸成铸态银钯合金单晶母线：将制备好的银合金铸锭加入有氮气保护的水平连铸金属单晶连铸室，应用中频感应加热、熔化、精炼和除气后，将熔液注入储液池保温，完成对银钯合金熔液的水平单晶连铸，得到ф3mm左右、纵向和横向晶粒数均为1个的铸态银钯合金单晶母线。
 
④粗拔：将ф3mm的银钯合金单晶母线拉拔成直径为1mm左右的银钯合金单晶丝。
⑤热处理：将直径为1mm左右的银钯合金单晶丝进行退火。
⑥精拔：将直径为1mm左右的银钯合金单晶丝精密拉拔成直径分别为13μm—50μm的成品银钯合金单晶键合丝。
⑦热处理：将精拔后的银钯合金单晶键合丝进行退火。
⑧表面清洗：先用稀释后的酸液对键合丝进行酸洗，然后经超声波清洗，再经高纯水清洗、烘干；
⑨分卷：将成品银钯合金单晶键合丝进行复绕、分卷、包装。

Claims (2)

1.一种银钯合金单晶键合丝，其特征是组成该键合丝的材料由下列重量百分比的原材料组成：钯（Pd）占0.003%—0.008%、铜（Cu）占0.002%—0.004%、钙（Ca）占0.0001%—0.0003%、铍（Be）占0.0006%—0.0009%，其余为银，之和等于100%; 要求银的纯度大于99.9999%、铜的纯度大于99.9995%，钯的纯度大于99.999%，钙的纯度99.0%—99.5%，铍的纯度大于99.999%。
2.一种权利要求1所述的银钯合金单晶键合丝的制造方法，其特征是银钯合金单晶键合丝的制作工艺步骤和方法如下：
①提取高纯银：以国家标准GB/T 4135中1号银（IC-Ag99.99）为基材，提取纯度大于99.9999%的高纯银，经清洗、烘干备用；
②制备成银合金铸锭：提取纯度大于99.9999%的高纯银，然后加入钯、铜、钙、铍，成分含量按照重量百分比分别为钯占0.003%-0.008%、铜占0.002%-0.004%、钙占0.0001%-0.0003%、铍占0.0006%-0.0009%，其余为银，这些金属经机械混合后放入高纯石墨坩埚中，在惰性气体保护条件下使用感应电炉使其熔化，进而制备成银合金铸锭；
③连铸成铸态银钯合金单晶母线，将制备好的银合金铸锭加入有氮气保护的水平连铸金属单晶连铸室，应用中频感应加热、熔化、精炼和除气后，将熔液注入储液池保温，完成对银钯合金熔液的水平单晶连铸，得到ф3mm左右、纵向和横向晶粒数均为1个的铸态银钯合金单晶母线；
④粗拔：将ф3mm的银钯合金单晶母线拉拔成直径为1mm左右的银钯合金单晶丝；
⑤热处理：将直径为1mm左右的银钯合金单晶丝进行退火；
⑥精拔：将直径为1mm左右的银钯合金单晶丝精密拉拔成直径分别为13μm—50μm的成品银钯合金单晶键合丝；
⑦热处理：将精拔后的银钯合金单晶键合丝进行退火；
⑧表面清洗：先用稀释后的酸液对键合丝进行酸洗，然后经超声波清洗，再经高纯水清洗、烘干；
⑨分卷：将成品银钯合金单晶键合丝进行复绕、分卷、包装。
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103779309A (zh) * 2014-01-20 2014-05-07 江西蓝微电子科技有限公司 镀金金银钯合金单晶键合丝及其制造方法
CN103779308A (zh) * 2014-01-20 2014-05-07 江西蓝微电子科技有限公司 金银钯合金单晶键合丝及其制造方法
CN104377185A (zh) * 2014-01-17 2015-02-25 江西蓝微电子科技有限公司 镀金银钯合金单晶键合丝及其制造方法
CN104716250A (zh) * 2015-03-02 2015-06-17 安徽华晶微电子材料科技有限公司 一种极微细无金银合金镀金键合丝及其制作方法
CN106834782A (zh) * 2016-12-23 2017-06-13 昆山全亚冠环保科技有限公司 一种金锡合金线材的制造方法
CN107316854A (zh) * 2017-06-15 2017-11-03 滕州晨晖电子集团股份有限公司 一种金、银和钯的合金键合线及其制备方法
CN109182826A (zh) * 2018-09-18 2019-01-11 重庆材料研究院有限公司 一种高强韧性、低电阻率的银金合金键合丝
CN109411362A (zh) * 2018-10-13 2019-03-01 深圳粤通应用材料有限公司 一种高强度耐冷热冲击键合合金丝的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080240975A1 (en) * 2007-03-30 2008-10-02 Mk Electron Co. Ltd. Ag-based alloy wire for semiconductor package
CN101667566A (zh) * 2009-09-20 2010-03-10 宁波康强电子股份有限公司 一种银基覆金的键合丝线及其制造方法
CN102517528A (zh) * 2011-12-09 2012-06-27 徐云管 一种单晶合金材料制造超高张力线的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080240975A1 (en) * 2007-03-30 2008-10-02 Mk Electron Co. Ltd. Ag-based alloy wire for semiconductor package
CN101667566A (zh) * 2009-09-20 2010-03-10 宁波康强电子股份有限公司 一种银基覆金的键合丝线及其制造方法
CN102517528A (zh) * 2011-12-09 2012-06-27 徐云管 一种单晶合金材料制造超高张力线的方法

Cited By (9)

* Cited by examiner, † Cited by third party
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CN103779308A (zh) * 2014-01-20 2014-05-07 江西蓝微电子科技有限公司 金银钯合金单晶键合丝及其制造方法
CN104716250A (zh) * 2015-03-02 2015-06-17 安徽华晶微电子材料科技有限公司 一种极微细无金银合金镀金键合丝及其制作方法
CN106834782A (zh) * 2016-12-23 2017-06-13 昆山全亚冠环保科技有限公司 一种金锡合金线材的制造方法
CN106834782B (zh) * 2016-12-23 2019-04-26 昆山全亚冠环保科技有限公司 一种金锡合金线材的制造方法
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CN109182826A (zh) * 2018-09-18 2019-01-11 重庆材料研究院有限公司 一种高强韧性、低电阻率的银金合金键合丝
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