CN109616470B - 集成电路、基于集成电路的半导体装置和标准单元库 - Google Patents
集成电路、基于集成电路的半导体装置和标准单元库 Download PDFInfo
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- CN109616470B CN109616470B CN201910079668.2A CN201910079668A CN109616470B CN 109616470 B CN109616470 B CN 109616470B CN 201910079668 A CN201910079668 A CN 201910079668A CN 109616470 B CN109616470 B CN 109616470B
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- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
- H01L2027/11868—Macro-architecture
- H01L2027/11874—Layout specification, i.e. inner core region
- H01L2027/11875—Wiring region, routing
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910079668.2A CN109616470B (zh) | 2014-07-22 | 2015-07-22 | 集成电路、基于集成电路的半导体装置和标准单元库 |
Applications Claiming Priority (6)
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US201462027401P | 2014-07-22 | 2014-07-22 | |
US62/027,401 | 2014-07-22 | ||
KR10-2015-0003466 | 2015-01-09 | ||
KR1020150003466A KR101958421B1 (ko) | 2014-07-22 | 2015-01-09 | 집적 회로, 상기 집적 회로에 따른 반도체 소자 및 표준 셀 라이브러리 |
CN201510434904.XA CN105304624B (zh) | 2014-07-22 | 2015-07-22 | 集成电路、基于集成电路的半导体装置和标准单元库 |
CN201910079668.2A CN109616470B (zh) | 2014-07-22 | 2015-07-22 | 集成电路、基于集成电路的半导体装置和标准单元库 |
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CN201510434904.XA Division CN105304624B (zh) | 2014-07-22 | 2015-07-22 | 集成电路、基于集成电路的半导体装置和标准单元库 |
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CN109616470A CN109616470A (zh) | 2019-04-12 |
CN109616470B true CN109616470B (zh) | 2023-07-04 |
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KR (1) | KR101958421B1 (ko) |
CN (1) | CN109616470B (ko) |
TW (1) | TWI628741B (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102514097B1 (ko) * | 2016-08-03 | 2023-03-23 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US9812324B1 (en) * | 2017-01-13 | 2017-11-07 | Globalfoundries Inc. | Methods to control fin tip placement |
KR102295527B1 (ko) * | 2017-02-08 | 2021-08-31 | 삼성전자 주식회사 | 컨택 점퍼를 포함하는 집적 회로 |
US10319668B2 (en) | 2017-02-08 | 2019-06-11 | Samsung Electronics Co., Ltd. | Integrated circuit having contact jumper |
US10733352B2 (en) | 2017-11-21 | 2020-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit and layout method for standard cell structures |
DE102018124711B4 (de) | 2017-11-21 | 2024-01-11 | Taiwan Semiconductor Manufacturing Co. Ltd. | Layout-Verfahren für Standardzellenstrukturen |
CN111916443A (zh) * | 2020-08-10 | 2020-11-10 | 泉芯集成电路制造(济南)有限公司 | 一种鳍式场效应晶体管及其版图结构 |
Citations (2)
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CN1469465A (zh) * | 2002-06-18 | 2004-01-21 | ���µ�����ҵ��ʽ���� | 用于多电源的标准单元及其相关技术 |
CN1893074A (zh) * | 2005-06-30 | 2007-01-10 | 松下电器产业株式会社 | 半导体集成电路、标准单元、标准单元库、设计方法及设计装置 |
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JP2003142599A (ja) * | 2001-11-01 | 2003-05-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6662350B2 (en) * | 2002-01-28 | 2003-12-09 | International Business Machines Corporation | FinFET layout generation |
KR100504194B1 (ko) | 2002-12-16 | 2005-07-28 | 매그나칩 반도체 유한회사 | Mos 캐패시터를 갖는 dram 셀 및 그 제조 방법 |
US6943405B2 (en) * | 2003-07-01 | 2005-09-13 | International Business Machines Corporation | Integrated circuit having pairs of parallel complementary FinFETs |
KR100702552B1 (ko) * | 2003-12-22 | 2007-04-04 | 인터내셔널 비지네스 머신즈 코포레이션 | 이중 게이트 FinFET 디자인을 위한 자동화 레이어생성 방법 및 장치 |
JP2008182083A (ja) | 2007-01-25 | 2008-08-07 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US9362290B2 (en) * | 2010-02-08 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell layout |
FR2968128B1 (fr) * | 2010-11-26 | 2013-01-04 | St Microelectronics Sa | Cellule precaracterisee pour circuit intégré |
JP2012222151A (ja) * | 2011-04-08 | 2012-11-12 | Panasonic Corp | 半導体集積回路装置 |
-
2015
- 2015-01-09 KR KR1020150003466A patent/KR101958421B1/ko active IP Right Grant
- 2015-07-21 TW TW104123475A patent/TWI628741B/zh active
- 2015-07-22 CN CN201910079668.2A patent/CN109616470B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1469465A (zh) * | 2002-06-18 | 2004-01-21 | ���µ�����ҵ��ʽ���� | 用于多电源的标准单元及其相关技术 |
CN1893074A (zh) * | 2005-06-30 | 2007-01-10 | 松下电器产业株式会社 | 半导体集成电路、标准单元、标准单元库、设计方法及设计装置 |
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Publication number | Publication date |
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TWI628741B (zh) | 2018-07-01 |
CN109616470A (zh) | 2019-04-12 |
KR20160011562A (ko) | 2016-02-01 |
TW201611185A (zh) | 2016-03-16 |
KR101958421B1 (ko) | 2019-03-14 |
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