CN109390286B - 阵列基板及其制造方法、显示面板及其制造方法 - Google Patents
阵列基板及其制造方法、显示面板及其制造方法 Download PDFInfo
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Abstract
本发明提供一种阵列基板及其制造方法、显示面板及其制造方法,在衬底基板上形成金属层之后,在金属层上形成保护层,所述保护层能够保护金属层,避免在后续对显示面板内的玻璃料进行激光照射时对金属层造成的损伤,从而降低引线裂纹的发生率,有利于提高显示面板的良率。此外,通过本申请的技术方案,所述保护层暴露出检测电路,能够避免检测电路由于保护层的覆盖所造成的静电不良,进一步提高了显示面板的良率。
Description
技术领域
本发明涉及平板显示领域,具体涉及一种阵列基板及其制造方法、显示面板及其制造方法。
背景技术
显示面板具有显示区(active area,AA区)和非显示区,显示区内配置有多个像素以形成像素阵列,非显示区则设置有多层金属层以构成周边线路。每个像素一般至少包括薄膜晶体管以及与该薄膜晶体管连接的像素电极,且每个像素都被两条相邻的扫描线以及两条相邻的数据线包围。这些扫描线以及数据线从显示区延伸至非显示区,并通过非显示区的周边线路与驱动芯片电连接,进而实现显示面板的正常工作。周边线路由连接扫描线与数据线的一端向驱动芯片所在区域集中而构成扇出走线。
发明人研究发现,扇出走线很容易出现引线裂纹(Metal Crack)现象,最终导致显示面板出现亮线,对显示面板的良率造成了很大的影响。因此,如何降低甚至避免引线裂纹的发生率,是本领域技术人员亟需解决的技术问题。
发明内容
本发明的目的在于提供一种阵列基板及其制造方法、显示面板及其制造方法,能够降低引线裂纹的发生率,并且能够避免绑定区内检测电路的静电击伤,提高显示面板的画面品质。
为实现上述目的,本发明提供一种阵列基板的制造方法,包括:
提供一衬底基板,在所述衬底基板上形成检测电路,以及偏离所述检测电路的至少一层金属层;
形成保护层,所述保护层覆盖着所述金属层,并且暴露着所述检测电路。
可选的,所述衬底基板上还形成输入/输出端子,所述保护层暴露着所述输入/输出端子。
可选的,所述衬底基板上设置有封装区;所述保护层仅覆盖着所述封装区内的金属层。
可选的,所述衬底基板包括显示区和非显示区,所述封装区以及所述检测电路、输入/输出端子均位于所述非显示区内;
在所述非显示区内形成金属层与检测电路的同时,在所述显示区内形成金属层以及薄膜晶体管;
在所述非显示区内形成保护层的同时,在所述显示区内也形成保护层;
使所述保护层暴露着所述检测电路的同时,去除所述显示区内设置有接触孔的位置处的保护层,暴露出所述接触孔。
相应的,本发明还提供一种阵列基板,采用如上所述的阵列基板的制造方法制造而成,所述阵列基板包括:
衬底基板;
位于所述衬底基板上检测电路,以及偏离所述检测电路的至少一层金属层;以及
保护层,所述保护层覆盖着所述金属层,并且暴露着所述检测电路。
可选的,所述保护层的材质为氮化硅、氧化硅、氮氧化硅和其组合中的一种。
可选的,所述衬底基板上还形成有输入/输出端子,所述保护层暴露着所述输入/输出端子。
可选的,所述检测电路与所述输入/输出端子组成绑定区,所述保护层暴露出的区域等于所述绑定区或大于所述绑定区。
相应的,本发明还提供一种显示面板的制造方法,包含如上所述的阵列基板的制造方法,所述显示面板的制造方法包括:
制造阵列基板,并提供一玻璃盖板;
在所述阵列基板或玻璃盖板的封装区涂布玻璃料,将阵列基板与所述玻璃盖板相贴合;
对所述玻璃料进行激光照射;
在绑定区内绑定驱动芯片。
相应的,本发明还提供一种显示面板,采用如上所述的显示面板的制造方法制造而成。
与现有技术相比,本发明提供的阵列基板及其制造方法、显示面板及其制造方法中,在衬底基板上形成至少一层金属层之后,在金属层上形成保护层,所述保护层能够保护金属层,避免在后续对显示面板内的玻璃料进行激光照射时对金属层造成的损伤,从而降低引线裂纹的发生率,有利于提高显示面板的良率。此外,通过本申请的技术方案,所述保护层暴露出检测电路,能够避免检测电路由于保护层的覆盖所造成的静电损伤,进一步提高了显示面板的良率。
附图说明
图1为一显示面板的包含封装区的非显示区的部分截面图;
图2为本发明一实施例所提供的阵列基板的制造方法的流程图;
图3为本发明一实施例所提供的阵列基板的包含封装区的非显示区的部分截面图;
图4为本发明一实施例所提供的阵列基板的包含绑定区的非显示区的部分俯视图;
图5为本发明一实施例所提供的显示面板中封装区与绑定区的位置关系示意图;
图6为本发明一实施例所提供的显示面板的包含封装区的非显示区的部分截面图。
具体实施方式
显示面板,例如OLED(有机电致发光二极管)显示面板一般包括相对设置的阵列基板和玻璃盖板。所述显示面板包括显示区与非显示区,在非显示区内设置有封装区,用于涂布玻璃料(Frit)来封装阵列基板与玻璃盖板。
如图1所示,其为显示面板的非显示区的部分结构示意图。如图1所示,所述显示面板包括相对设置的衬底基板10与玻璃盖板20。在非显示区内,在所述衬底基板10上形成多层金属层,在图1中仅示出了三层金属层,分别为:底层金属层11、中间金属层12以及顶层金属层13,三层金属层之间通过介质层14相互隔离,在封装区内的顶层金属层13上直接涂布玻璃料(Frit)15,然后将衬底基板10与玻璃盖板20相封装形成显示面板。所述非显示区内形成的底层金属层11、中间金属层12以及顶层金属层13等金属层属于扇出走线,用于连接驱动芯片与显示区内的数据线、扫描线等,将驱动芯片提供的电信号传输至所述数据线或扫描线。
为了能将衬底基板10与玻璃盖板20良好地封装在一起,本申请的一个实施例的方案如下:衬底基板上形成至少一层金属层之后;在金属层上形成保护层。保护层能够保护金属层,并且可以避免后续对显示面板内的玻璃料进行激光照射时对金属层造成损伤(例如,避免金属层在垂直于激光前进的方向上出现裂纹),从而降低引线裂纹的发生。申请人还意外发现,这种方法还降低了显示面板的亮线不良率,这是由于金属层的损伤或裂纹会导致显示区内的某一条数据线或扫描线无法接收到信号或接受的信号不准确,从而导致显示面板出现亮线。
在本申请的另一个实施例中:提供一衬底基板,在所述衬底基板上形成检测电路,以及偏离所述检测电路的至少一层金属层;形成保护层,所述保护层覆盖着所述金属层,并且暴露着所述检测电路。发明人发现,在衬底基板上形成至少一层金属层之后,在金属层上形成保护层,所述保护层能够保护金属层,避免在后续对显示面板内的玻璃料进行激光照射时对金属层造成的损伤,从而降低引线裂纹的发生率,有利于提高显示面板的良率。此外,形成保护层之后,所述保护层暴露着所述检测电路,能够避免检测电路由于保护层的覆盖所造成的静电不良,特别是可以消除检测电路(CT电路)中累积的静电荷,从而进一步提高了显示面板的良率。
为使本发明的内容更加清楚易懂,以下结合说明书附图,对本发明的内容做进一步说明。当然本发明并不局限于该具体实施例,本领域的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。
其次,本发明利用示意图进行了详细的表述,在详述本发明实例时,为了便于说明,示意图不依照一般比例局部放大,不应对此作为本发明的限定。
请参考图2所示,其为本发明一实施例所提供的阵列基板的制造方法的流程图,如图2所示,本发明提出一种阵列基板的制造方法,包括以下步骤:
步骤S01:提供一衬底基板,在所述衬底基板上形成检测电路,以及偏离所述检测电路的至少一层金属层;
步骤S02:形成保护层,所述保护层覆盖着所述金属层,并且暴露着所述检测电路。
图3为本发明一实施例所提供的阵列基板的包含封装区的非显示区的部分截面图,图4为本发明一实施例所提供的阵列基板的包含绑定区的非显示区的部分俯视图,请参考图2所示,并结合图3与图4,详细说明本发明提出的所述阵列基板的制造方法:
在步骤S01中,提供一衬底基板100。在本实施例中,所述衬底基板100包括显示区和非显示区,所述非显示区包围所述显示区。所述非显示区内设置有封装区与驱动芯片绑定区。当然,在其他实施例中,所述非显示区也可以与所述显示区位于衬底基板的不同表面,例如,所述非显示区位于所述衬底基板的背面,不占用显示区的面积,从而提高分辨率,以及实现窄边框或无边框。本发明对此不做限定。
所述衬底基板100可以由透明材料制成,例如可以是玻璃、石英、硅晶片、聚碳酸酯、聚甲基丙烯酸甲酯或者金属箔等。所述衬底基板100可以为刚性基板,也可以为柔性基板。所述衬底基板100的选择及预处理为本领域技术人员所熟悉,故不再详述。所述显示区后续用于在衬底基板100上形成扫描线、数据线、晶体管开关或像素电极等,所述非显示区后续用于在衬底基板100上形成扇出走线,用于连接显示区的扫描线、数据线等至驱动芯片。
如图3所示,所述非显示区包括封装区A,形成阵列基板之后在所述封装区A上涂布玻璃料,用于封装阵列基板与玻璃盖板形成显示面板。所述封装区上同样会设置有扇出走线。在一个实施例中,所述封装区A呈环形,包围所述显示区。图3中仅示出了包含封装区A的部分非显示区的截面图。
如图4所示,所述非显示区还包括驱动芯片绑定区B,形成显示面板之后,在驱动芯片绑定区B绑定(bonding)驱动芯片。所述非显示区内的扇出走线一端连接至所述显示区的扫描线、数据线等,另一端延伸至所述绑定区B,即扇出走线在绑定区B形成输入端子310与输出端子320,作为驱动芯片的输入与输出。在所述输入端子310与输出端子320之间还设置有检测电路330,所述检测电路330包含彼此连接的多个晶体管,通过所述扇出走线连接至显示区,用于在绑定驱动芯片之前,或者在形成显示面板之前,对阵列基板的电路进行检测。需要说明的是,所述绑定区B的尺寸与所述驱动芯片的外框尺寸完全一致。图4仅示出了包含了绑定区B的部分非显示区的俯视图。
所述封装区A与绑定区B的位置关系示意图请参照图5。如图5所示,最终形成的显示面板包括显示区10与非显示区20,所述非显示区20包围所述显示区10,所述封装区A与绑定区B均位于所述非显示区20内,所述封装区A包围所述显示区10,用于将阵列基板与玻璃盖板封装在一起,所述绑定区B位于所述非显示区20的一侧边缘,用于绑定驱动芯片。
接着,请参考图3与图4所示,在所述衬底基板100的绑定区B内形成检测电路303以及多个输入端子310与输出端子320。所述输入端子310与所述输出端子320均规则排列。优选地,多个输入端子310排成一列,多个输出端子320排成一列,且两列均与所述阵列基板的一侧边平行。所述检测电路303位于所述输入端子310与输出端子320之间。
在所述衬底基板100的绑定区B内形成检测电路303以及输入端子310、输出端子320的同时,在所述衬底基板100的非显示区内形成至少一层金属层。在本实施例中,优选地,在所述衬底基板100的非显示区内形成三层金属层,分别为底层金属层110、中间金属层120以及顶层金属层130,在其他实施例中,也可以形成两层、四层或更多的金属层,需要根据阵列基板实际的需求来确定,本发明并不做限定。所述底层金属层110、中间金属层120以及顶层金属层130之间通过介质层140相隔离。金属层与所述输入端子310、输出端子320以及测试电路330的位置关系如图4所示,所述输入端子310靠近所述衬底基板的边缘,所述输出端子320靠近所述衬底基板的中心区域,在所述输出端子320远离所述输入端子310一侧的非显示区内均可以设置有金属层,如图4中示意性的标示出了顶层金属层130。当然,其位置关系也可以参照图5所示,在所述绑定区B到所述显示区10之间的非显示区20内都可以设置金属层,当然在其余三侧的非显示区20内可以设置金属层。
优选的,所述输入端子310与所述输出端子320均包括通过接触孔相连接两层金属层。在形成底层金属层110、中间金属层120以及顶层金属层130的同时形成所述输入端子310与所述输出端子320。
例如,在形成底层金属层110的同时在所述绑定区内形成第一层金属层,之后在底层金属层110上形成介质层的同时在所述绑定区内形成一层介质层,之后对该介质层进行刻蚀形成通孔(该刻蚀可以与显示区内的某一次刻蚀同步),然后在形成中间层金属层120的同时,填充所述通孔并形成第二层金属层,第一层金属层与第二层金属层构成输入端子310或输出端子320。
优选的,在所述显示区内形成薄膜晶体管的过程中,在所述绑定区形成测试电路。优选的,所述测试电路包括多个相互连接的薄膜晶体管,其中晶体管的数量以及晶体管之间的连接关系需要根据实际的需求来确定,在本实施例中不对测试电路的具体结构进行详细描述,并且本发明对测试电路不做具体限定。
优选的,在所述衬底基板100的非显示区内形成输入端子310与输出端子320的同时,在所述衬底基板100的显示区也形成多层金属膜层,例如形成数据线、扫描线或像素电极等,即在显示区内形成数据线、扫描线、像素电极或其他金属膜层的同时在所述非显示区内形成多层金属层、以及在所述非显示区的绑定区内形成输入/输出端子。由此,多层金属层及端子的材质取决于在所述显示区内同时形成的数据线、扫描线、像素电极或其他金属膜层的材质,多层金属层的材质可以各不相同,也可以完全相同。所述多层金属层的材质可以包含但不限于铜、铝、镍、镁、铬、钼、钨及其合金等材料。当然,也可以单独在所述衬底基板100的非显示区内形成多层金属层。
所述多层金属层之间通过介质层140相隔离,不同金属层之间的介质层140是在不同的步骤中的形成的,但是都起到隔离金属层的作用,因此,在附图3中没有进行区分。可以理解的是,所述介质层140的形成步骤也与所述显示区内的绝缘层的形成同步,例如,在形成栅极绝缘层、层间绝缘层等的过程中形成所述介质层140中的任意一层,则所述介质层的材质与同时形成的栅极绝缘层、层间绝缘层的材质相同。所述介质层140的材质包含但不限于氧化物或氮化物,当然,不同金属层之间的介质层的材质可以不同。可以理解的是,也可以单独的在所述多层金属层之间形成所述介质层140,亦即,在非显示区内形成的多层金属层以及介质层可以与所述显示区内的金属层或绝缘层同时形成,也可以单独的形成。
以下简单介绍在所述衬底基板100的非显示区内形成所述多层金属层以及介质层的其中的一个方法,包括以下步骤:
首先,在所述衬底基板100上形成第一层介质层,优选的可以采用化学气相沉积法形成,例如高密度等离子体化学气相沉积(HDPCVD)、低压化学气相沉积(LPCVD)或超高真空化学气相沉积(UHVCVD)等。然后在所述第一层介质层上形成底层金属,优选的,采用溅射的方法形成;然后对所述底层金属进行图形化,所述图形化工艺例如包括旋涂光刻胶、曝光、显影以及刻蚀工艺,形成底层金属层110。然后重复上述的步骤,在所述底层金属层110上形成第二介质层,所述第二介质层覆盖所述底层金属层110,接着在第二介质层上形成中间金属,并刻蚀形成中间金属层120,然后在中间金属层120上形成第三介质层,所述第三介质层覆盖所述中间金属层120,最后在第三介质层上形成顶层金属,刻蚀之后形成顶层金属层130。所述第一介质层、第二介质层与第三介质层构成图3所示的介质层140。可以理解的是,所述金属层的数量并不限于上述所介绍的三层,也可以仅包括两层金属层,或者是包括四层以上金属层,相应的,介质层的数量也可以根据金属层的数量适应性变化。
在步骤S02中,请参考图3所示,在所述非显示区内形成保护层150,所述保护层150覆盖所述非显示区内的多层金属层中的顶层金属层130以及检测电路330与输入端子310与输出端子320。所述保护层150可以是单层结构,也可以是叠层结构。所述保护层150的材质包含但不限于氮化硅、氧化硅或氮氧化硅,当然,所述保护层150的材质也可以为本领域技术人员已知的其他材料,能够保护金属层不受激光照射的破坏即可。由于氮化硅、氧化硅或氮氧化硅为本领域的常规材料,所以可作为本实施例的优选材料。所述保护层150的厚度优选为最佳的,所述保护层150的厚度为该厚度的所述保护层150能够保护金属层不受激光照射的损伤,也不会对最终形成的显示面板的厚度造成影响。
本实施例中,采用化学气相沉积法形成所述保护层150,形成所述保护层150的条件优选为:腔室温度350℃~400℃,腔室压强900mtorr~1100mtorr,成膜时间350s~450s,最佳的,腔室温度为385℃,腔室压强1000mtorr,成膜时间400s。
优选的,在非显示区内形成保护层150的同时,在所述显示区内也形成保护层,即在整个所述衬底基板100上同时形成保护层,并对所述显示区内设置有接触孔的位置处的保护层进行刻蚀,暴露出所述接触孔,避免保护层对显示区的连接造成影响。在显示区内形成保护层之前的膜层并不受限定,例如,在显示区内形成数据线的同时,在所述非显示区内形成顶层金属层,之后如果直接形成保护层,则在显示区内,是在数据线上形成保护层,如果在显示区内还要在数据线上形成其他膜层(例如扫描线)之后再形成保护层,则在显示区内,是在扫描线上形成保护层。
在顶层金属层130上形成保护层150,所述保护层150用于保护金属层,避免后续进行激光照射时激光对金属层造成的影响,从而避免引线裂纹的产生,降低引线裂纹的发生率,最终提高了显示面板的良率。但是由于在绑定区B内也形成了所述保护层150,所述绑定区B内的测试电路330被所述保护层150覆盖,不利用表面电荷的消除,容易引出测试电路发生静电不良,因此,需要继续进行步骤S04。
接着,请参考图4所示,对所述保护层150进行图形化,形成开孔,所述开孔暴露出所述绑定区B内的检测电路330以及输入端子310与输出端子320。
具体的,在所述保护层150上形成光刻胶层,对所述光刻胶层进行曝光与显影,形成图形化的光刻胶层,暴露出所述绑定区B内的检测电路330以及输入端子310与输出端子320上方的保护层150;然后,以图形化的光刻胶层为掩膜,对所述保护层150进行刻蚀,优选的,采用等离子体干法刻蚀对所述保护层150进行刻蚀,去除暴露出的所述保护层150,暴露出所述绑定区B内的检测电路330以及输入端子310与输出端子320。
刻蚀气体优选为C2HF5(五氟乙烷)、H2(氢气)与Ar(氩气)的混合气体。所述氩气可以提高离子轰击的能量,利用离子轰击促进五氟乙烷与保护层的反应,并可以加快反应速率。所述刻蚀气体还可以为CF4(四氟化碳)与O2(氧气)的混合气体,或者本领域技术人员已知的其他刻蚀气体,当然,也可以采用本领域技术人员已知的其他刻蚀方法对所述保护层150进行刻蚀,本发明对此不做限定。
优选的,对所述保护层150进行图形化,还包括暴露出除检测电路330以及输入端子310与输出端子320之外的其余绑定区,亦即通过对所述保护层150进行图形化,形成的开孔的尺寸等于所述绑定区的尺寸。如图4所示,对所述保护层150进行图形化,可以直接刻蚀暴露出绑定区B,与上述只暴露出所述绑定区B内的检测电路330以及输入端子310与输出端子320,刻蚀的范围增大,可以在一定程度上降低工艺难度。
当然,为了避免后续在绑定驱动芯片时对显示面板造成影响,对所述保护层150进行图形化时,还可以暴露出距离所述绑定区B的外围0~100um内的非显示区,如图4中的开口170,所述开口170的尺寸大于所述绑定区B的尺寸。即在对所述保护层150进行刻蚀时,直接形成所述开口170,与上述暴露出所述绑定区B相比,进一步增大了刻蚀的范围,进一步降低了工艺难度。所述开口170在平行于所述驱动芯片长边的方向上,比所述绑定区B的两侧各增加长度a,在平行于所述驱动芯片短边的方向上,所述开口170比所述绑定区B的两侧各增加宽度b,其中长度a与宽度b的尺寸均在0~100um内,例如20mm、40mm、60mm、80mm或100um,当然,如果非显示区的尺寸允许的话,也可以大于100um,其具体尺寸由实际的显示面板内的尺寸以及刻蚀的工艺条件来确定。
当然,对所述保护层150进行图形化时,去除所述绑定区B内的保护层的同时,也可以对所述非显示区除封装区A以外的区域进行刻蚀,只保留封装区A内的顶层金属层130上的保护层150(如图3所示),这样不仅可以减少裂纹的发生,而且还可以避免由于绑定区内的测试电路上形成保护层所造成的静电不良,从而有助于提高产品的良率。
在对所述保护层150进行刻蚀时,还可以同时刻蚀去除显示区域的保护层。也就是说,在形成所述保护层之后,需要对显示区内设置有接触孔的位置处的保护层进行刻蚀,暴露出所述接触孔。此外,在该刻蚀过程中,可以刻蚀去除非显示区内绑定区上的保护层,也可以刻蚀去除非显示区除封装区之外的其余区域内的保护层,也可以将显示区内的所有保护层均刻蚀掉,需要根据实际情况进行选择。
具体的,在所述保护层150上涂布光刻胶层,通过掩膜板对所述光刻胶层进行曝光,对于正光刻胶而言,所述掩模板可以仅暴露出所述显示区内的接触孔,或者暴露出整个显示区,或者暴露出非显示区内的绑定区,或者暴露出非显示区内除封装区之外的其他区域,或者暴露出除封装区以外的所有的非显示区与所有的显示区,根据具体情况来确定所使用的掩模板。然后对经过曝光的光刻胶层进行显影,形成图形化的光刻胶层,然后以所述图像化的光刻胶层为掩膜对所述保护层进行刻蚀,最后剥离剩余的光刻胶层,形成所需的保护层的图案。
需要说明的是,以图形化的光刻胶层为掩膜对保护层进行刻蚀的过程中,要避免对保护层之下的其他膜层造成损伤,例如刻蚀非显示区除封装区外其余区域的保护层时,要避免对保护层下的顶层金属层造成损伤。针对该问题,可以调节刻蚀选择比,选择合适的刻蚀选择比对所述保护层进行刻蚀,保证对所述保护层具有高的刻蚀率,对于其余膜层具有低的刻蚀率,或者不对其余膜层进行刻蚀。例如,所述保护层与其余膜层的刻蚀选择比优选为大于5:1。
另外,在对所述保护层150进行刻蚀的步骤中,还可以对所述封装区内的保护层150进行部分刻蚀,使得封装区内的保护层150至少有部分背离所述顶层金属层130的表面为凹面、凸面或凹凸面,即所述保护层150至少有部分背离所述顶层金属层130的表面为非平面表面,使得之后涂覆的玻璃料与所述保护层150具有更好的粘接力,即通过非平面表面提高玻璃料与保护层的粘接力,从而提高最终形成的显示面板的可靠性。
优选的,所述凹面或凸面为圆柱体、圆锥体、圆台或半球体中的一种或两种以上的组合,所述凹凸面由所述凹面、凸面交错相连而成,也可以是由所述凹面、凸面交错间隔分布而成。所述凹面例如是由形成于所述保护层150表面的若干凹槽构成,这些凹槽的尺寸和形状可以相同,也可以不相同。所述凸面例如是由形成于所述保护层150表面的若干凸起构成,这些凸起的尺寸和形状可以相同,也可以不相同。所述凹凸面则是由形成于所述保护层150表面的若干凹槽和若干凸起共同构成,同样的,不限定凹槽和凸起的形状和尺寸。
最终形成如图3与图4所示的结构,形成所述保护层150之后,在封装之前还包括完成衬底基板100显示区内剩余各膜层的制作,其制作方法为本领域技术人员所熟悉,故不再详述,最终完成阵列基板的制作。
相应的,本发明还提供一种显示面板的制造方法,包括如上所述的阵列基板的制造方法,请参照图3、图4与图6所示,所述显示面板的制造方法包括:
完成阵列基板的制作,并提供一玻璃盖板200。
在所述阵列基板或玻璃盖板200的封装区涂布玻璃料160,将阵列基板与玻璃盖板200相贴合。
对所述玻璃料进行激光照射;所述保护层150能够保护金属层,避免金属层产生裂纹,降低了裂纹的发生率,提高了显示面板的良率。
在所述阵列基板的绑定区内绑定驱动芯片,由于在测试电路330的保护层被去除,能够避免检测电路被静电损伤,降低了静电不良的发生率,进一步提高了显示面板的良率。
相应的,本发明还提供一种阵列基板,采用如上所述的阵列基板的制造方法制造而成。所述阵列基板包括:
衬底基板;
位于所述衬底基板上检测电路,以及偏离所述检测电路的至少一层金属层;以及
保护层,所述保护层覆盖着所述金属层,并且暴露着所述检测电路。
具体的,请参考图3与图4所示,所述阵列基板包括:包含显示区和非显示区的衬底基板100(图3中仅示出了包含封装区A的部分非显示区,图4中仅示出了包含绑定区B的部分非显示区),位于所述衬底基板100的非显示区内的多层金属层,优选为三层,即底层金属层110、中间金属层120以及顶层金属层130,还包括位于三层金属层之间、包围底层金属层110与中间金属层120、并且位于底层金属层110与衬底基板100之间的介质层140;还包括位于除绑定区B内的检测电路330以及输入端子310与输出端子320以外的其余非显示区内顶层金属层130上的保护层150。
在顶层金属层130上形成保护层150,所述保护层150能够保护金属层,避免在后续对显示面板内的玻璃料进行激光照射时对金属层造成的损伤,从而降低引线裂纹的发生率,有利于提高显示面板的良率;并且形成保护层150之后对所述保护层150进行图形化,暴露出绑定区内的检测电路330以及输入/输出端子310/320,能够避免检测电路由于保护层的覆盖所造成的静电不良,进一步提高了显示面板的良率。
相应的,本发明还提供一种显示面板,采用如上所述的显示面板的制造方法制造而成。
综上所述,本发明提供的阵列基板及其制造方法、显示面板及其制造方法中,在衬底基板上形成至少一层金属层之后,在金属层上形成保护层,所述保护层能够保护金属层,避免后续显示面板内的玻璃料进行激光照射时对金属层造成的损伤,从而降低引线裂纹的发生率,有利于提高显示面板的良率。此外,通过本申请的技术方案,所述保护层暴露出检测电路,能够避免检测电路由于保护层的覆盖所造成的静电不良,进一步提高了显示面板的良率。
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。
Claims (10)
1.一种OLED阵列基板的制造方法,其特征在于,包括:
提供一衬底基板,在所述衬底基板上形成检测电路的同时,形成偏离所述检测电路的至少一层金属层;
在整个衬底基板上形成保护层,所述保护层覆盖着所述金属层;
对所述保护层进行图形化以暴露所述检测电路。
2.如权利要求1所述的阵列基板的制造方法,其特征在于,所述衬底基板上还形成输入/输出端子,所述保护层暴露着所述输入/输出端子。
3.如权利要求2所述的阵列基板的制造方法,其特征在于,所述衬底基板上设置有封装区;所述保护层仅覆盖着所述封装区内的金属层。
4.如权利要求3所述的阵列基板的制造方法,其特征在于,所述封装区以及所述检测电路、输入/输出端子均位于非显示区内;
在所述非显示区内形成金属层与检测电路的同时,在所述显示区内形成金属层以及薄膜晶体管;
使所述保护层暴露着所述检测电路的同时,去除所述显示区内设置有接触孔的位置处的保护层,暴露出所述接触孔。
5.一种OLED阵列基板,其特征在于,采用如权利要求1~4中任一项所述的阵列基板的制造方法制造而成,所述阵列基板包括:
衬底基板;
位于所述衬底基板上检测电路,以及偏离所述检测电路的至少一层金属层;以及
保护层,所述保护层覆盖着所述金属层,并且暴露着所述检测电路;
所述衬底基板包括显示区和非显示区,在所述非显示区内和所述显示区内均设置有所述保护层;
所述非显示区包括绑定区,所述检测电路设置于所述绑定区内的输入端子与输出端子之间。
6.如权利要求5所述的阵列基板,其特征在于,所述保护层的材质为氮化硅、氧化硅、氮氧化硅和其组合中的一种。
7.如权利要求5所述的阵列基板,其特征在于,所述衬底基板上还形成有输入/输出端子,所述保护层暴露着所述输入/输出端子。
8.如权利要求7所述的阵列基板,其特征在于,所述检测电路与所述输入/输出端子组成绑定区,所述保护层暴露出的区域等于所述绑定区或大于所述绑定区。
9.一种OLED显示面板的制造方法,其特征在于,包含如权利要求1~4中任一项所述的阵列基板的制造方法,所述显示面板的制造方法包括:
制造阵列基板,并提供玻璃盖板;
在所述阵列基板或玻璃盖板的封装区涂布玻璃料,将阵列基板与所述玻璃盖板进行封装;
对所述玻璃料进行激光照射;
在绑定区内绑定驱动芯片。
10.一种OLED显示面板,其特征在于,采用如权利要求9所述的显示面板的制造方法制造而成。
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US8493543B2 (en) * | 2008-10-17 | 2013-07-23 | Sony Corporation | Liquid crystal display device |
JP2010102237A (ja) * | 2008-10-27 | 2010-05-06 | Mitsubishi Electric Corp | 表示装置 |
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KR20140016170A (ko) * | 2012-07-30 | 2014-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 밀봉체 및 유기 전계 발광 장치 |
TWI477869B (zh) * | 2012-11-02 | 2015-03-21 | Au Optronics Corp | 顯示面板之陣列基板及其製作方法 |
WO2014073481A1 (ja) * | 2012-11-08 | 2014-05-15 | シャープ株式会社 | アクティブマトリクス基板、及び表示装置 |
CN103197478B (zh) * | 2013-03-20 | 2015-11-25 | 合肥京东方光电科技有限公司 | 一种阵列基板及液晶显示装置 |
CN103309106B (zh) * | 2013-07-10 | 2015-11-11 | 深圳市华星光电技术有限公司 | 彩色滤光阵列基板及其制造方法 |
US9455281B2 (en) * | 2014-06-19 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, touch panel module, and display device |
CN104280958B (zh) * | 2014-09-26 | 2017-03-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN104678635A (zh) * | 2015-03-19 | 2015-06-03 | 合肥京东方光电科技有限公司 | 一种显示面板和显示装置 |
KR102399574B1 (ko) * | 2015-04-03 | 2022-05-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102439308B1 (ko) * | 2015-10-06 | 2022-09-02 | 삼성디스플레이 주식회사 | 표시장치 |
CN106681075B (zh) * | 2017-03-23 | 2019-05-28 | 京东方科技集团股份有限公司 | 显示面板、阵列基板及其制造方法、检测电路 |
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CN205944094U (zh) * | 2016-06-17 | 2017-02-08 | 上海天马微电子有限公司 | 一种oled显示面板及显示装置 |
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TW201842389A (zh) | 2018-12-01 |
CN109390286A (zh) | 2019-02-26 |
WO2019029182A1 (zh) | 2019-02-14 |
JP2020505632A (ja) | 2020-02-20 |
KR102201113B1 (ko) | 2021-01-12 |
KR20190085146A (ko) | 2019-07-17 |
EP3667725B1 (en) | 2023-09-20 |
US20210335839A1 (en) | 2021-10-28 |
EP3667725A4 (en) | 2020-09-02 |
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