CN109346490A - 固态图像感测元件和成像系统 - Google Patents
固态图像感测元件和成像系统 Download PDFInfo
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- CN109346490A CN109346490A CN201811117287.0A CN201811117287A CN109346490A CN 109346490 A CN109346490 A CN 109346490A CN 201811117287 A CN201811117287 A CN 201811117287A CN 109346490 A CN109346490 A CN 109346490A
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/7795—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Focusing (AREA)
- Automatic Focus Adjustment (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014156790A JP6521586B2 (ja) | 2014-07-31 | 2014-07-31 | 固体撮像素子および撮像システム |
| JP2014-156790 | 2014-07-31 | ||
| CN201510463213.2A CN105321971B (zh) | 2014-07-31 | 2015-07-31 | 固态图像感测元件和成像系统 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510463213.2A Division CN105321971B (zh) | 2014-07-31 | 2015-07-31 | 固态图像感测元件和成像系统 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109346490A true CN109346490A (zh) | 2019-02-15 |
Family
ID=53785429
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510463213.2A Active CN105321971B (zh) | 2014-07-31 | 2015-07-31 | 固态图像感测元件和成像系统 |
| CN201811117287.0A Pending CN109346490A (zh) | 2014-07-31 | 2015-07-31 | 固态图像感测元件和成像系统 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510463213.2A Active CN105321971B (zh) | 2014-07-31 | 2015-07-31 | 固态图像感测元件和成像系统 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10020340B2 (enExample) |
| EP (1) | EP2980852B1 (enExample) |
| JP (1) | JP6521586B2 (enExample) |
| CN (2) | CN105321971B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110061025A (zh) * | 2019-04-30 | 2019-07-26 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014089432A (ja) * | 2012-03-01 | 2014-05-15 | Sony Corp | 固体撮像装置、固体撮像装置におけるマイクロレンズの形成方法、及び、電子機器 |
| JP6179776B2 (ja) * | 2014-06-09 | 2017-08-16 | ソニー株式会社 | 撮像素子および電子機器、並びに製造方法 |
| JP6521586B2 (ja) * | 2014-07-31 | 2019-05-29 | キヤノン株式会社 | 固体撮像素子および撮像システム |
| WO2016047282A1 (ja) * | 2014-09-24 | 2016-03-31 | ソニー株式会社 | 撮像素子、撮像装置および撮像素子の製造方法 |
| JP6555867B2 (ja) * | 2014-09-26 | 2019-08-07 | キヤノン株式会社 | 撮像装置 |
| EP3425900B1 (en) * | 2016-02-29 | 2023-08-30 | Sony Group Corporation | Solid-state imaging element |
| CN116404020A (zh) * | 2016-07-20 | 2023-07-07 | 索尼公司 | 受光元件及其制造方法、成像器件和电子装置 |
| US10341590B2 (en) * | 2016-08-12 | 2019-07-02 | Semiconductor Components Industries, Llc | Methods and apparatus for a CCD image sensor |
| JP2018107725A (ja) * | 2016-12-27 | 2018-07-05 | キヤノン株式会社 | 光電変換装置、撮像システム |
| CN108807434B (zh) * | 2017-04-26 | 2023-12-05 | 松下知识产权经营株式会社 | 摄像装置及照相机系统 |
| JP7026336B2 (ja) * | 2017-06-06 | 2022-02-28 | パナソニックＩｐマネジメント株式会社 | 撮像装置、および、カメラシステム |
| KR102554689B1 (ko) * | 2018-10-10 | 2023-07-13 | 삼성전자주식회사 | 투명 전극을 갖는 반도체 소자 |
| JPWO2020179494A1 (enExample) * | 2019-03-07 | 2020-09-10 | ||
| WO2020218047A1 (ja) * | 2019-04-26 | 2020-10-29 | パナソニックＩｐマネジメント株式会社 | 撮像素子 |
| WO2021059676A1 (ja) * | 2019-09-27 | 2021-04-01 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
| JPWO2021161855A1 (enExample) * | 2020-02-12 | 2021-08-19 | ||
| EP4131441A4 (en) | 2020-03-31 | 2023-09-20 | Panasonic Intellectual Property Management Co., Ltd. | IMAGING DEVICE |
| KR20220043556A (ko) * | 2020-09-29 | 2022-04-05 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| KR102889849B1 (ko) | 2020-11-24 | 2025-11-27 | 삼성전자주식회사 | 이미지 센서 |
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| JP2012064822A (ja) * | 2010-09-17 | 2012-03-29 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| CN103037161A (zh) * | 2011-10-07 | 2013-04-10 | 三星电子株式会社 | 包括相位差检测像素的成像装置 |
| WO2013187001A1 (ja) * | 2012-06-11 | 2013-12-19 | 富士フイルム株式会社 | 固体撮像素子および撮像装置 |
| CN105321971B (zh) * | 2014-07-31 | 2018-10-12 | 佳能株式会社 | 固态图像感测元件和成像系统 |
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| JP2011258729A (ja) | 2010-06-08 | 2011-12-22 | Panasonic Corp | 固体撮像装置及びその製造方法 |
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- 2015-07-31 CN CN201811117287.0A patent/CN109346490A/zh active Pending
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|---|---|
| JP2016033982A (ja) | 2016-03-10 |
| EP2980852B1 (en) | 2019-11-27 |
| EP2980852A1 (en) | 2016-02-03 |
| US20160035780A1 (en) | 2016-02-04 |
| US10020340B2 (en) | 2018-07-10 |
| JP6521586B2 (ja) | 2019-05-29 |
| CN105321971B (zh) | 2018-10-12 |
| US20180294307A1 (en) | 2018-10-11 |
| CN105321971A (zh) | 2016-02-10 |
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