CN109103253B - Mos型功率器件及其制备方法 - Google Patents
Mos型功率器件及其制备方法 Download PDFInfo
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- CN109103253B CN109103253B CN201710475081.4A CN201710475081A CN109103253B CN 109103253 B CN109103253 B CN 109103253B CN 201710475081 A CN201710475081 A CN 201710475081A CN 109103253 B CN109103253 B CN 109103253B
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- 238000000034 method Methods 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 29
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
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- 229920005591 polysilicon Polymers 0.000 description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710475081.4A CN109103253B (zh) | 2017-06-21 | 2017-06-21 | Mos型功率器件及其制备方法 |
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CN201710475081.4A CN109103253B (zh) | 2017-06-21 | 2017-06-21 | Mos型功率器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN109103253A CN109103253A (zh) | 2018-12-28 |
CN109103253B true CN109103253B (zh) | 2022-05-20 |
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CN201710475081.4A Active CN109103253B (zh) | 2017-06-21 | 2017-06-21 | Mos型功率器件及其制备方法 |
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CN (1) | CN109103253B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115084215B (zh) * | 2021-11-10 | 2023-12-12 | 安徽瑞迪微电子有限公司 | 功率半导体器件制造方法 |
CN116313807B (zh) * | 2023-02-28 | 2024-05-28 | 上海维安半导体有限公司 | 一种双层侧墙结构的超结功率mosfet器件的制备方法及超结功率mosfet器件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101645457A (zh) * | 2008-08-08 | 2010-02-10 | 万国半导体股份有限公司 | 超自对准沟槽型双扩散金属氧化物半导体晶体管结构及其制造方法 |
CN104517851A (zh) * | 2013-09-30 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | Pmos器件及其制作方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010028055A (ko) * | 1999-09-17 | 2001-04-06 | 윤종용 | 자기정렬콘택 형성 방법 |
KR100979234B1 (ko) * | 2003-07-26 | 2010-08-31 | 매그나칩 반도체 유한회사 | 반도체소자의 게이트 형성방법 |
US7902082B2 (en) * | 2007-09-20 | 2011-03-08 | Samsung Electronics Co., Ltd. | Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers |
CN101728252B (zh) * | 2008-10-24 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | 形成快闪存储器栅极的方法以及快闪存储器 |
-
2017
- 2017-06-21 CN CN201710475081.4A patent/CN109103253B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101645457A (zh) * | 2008-08-08 | 2010-02-10 | 万国半导体股份有限公司 | 超自对准沟槽型双扩散金属氧化物半导体晶体管结构及其制造方法 |
CN104517851A (zh) * | 2013-09-30 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | Pmos器件及其制作方法 |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Applicant after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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