CN105762077B - 绝缘栅双极晶体管的制造方法 - Google Patents
绝缘栅双极晶体管的制造方法 Download PDFInfo
- Publication number
- CN105762077B CN105762077B CN201610310327.8A CN201610310327A CN105762077B CN 105762077 B CN105762077 B CN 105762077B CN 201610310327 A CN201610310327 A CN 201610310327A CN 105762077 B CN105762077 B CN 105762077B
- Authority
- CN
- China
- Prior art keywords
- dielectric
- deposit
- polysilicon
- manufacturing
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 239000011229 interlayer Substances 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000003139 buffering effect Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610310327.8A CN105762077B (zh) | 2016-05-12 | 2016-05-12 | 绝缘栅双极晶体管的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610310327.8A CN105762077B (zh) | 2016-05-12 | 2016-05-12 | 绝缘栅双极晶体管的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105762077A CN105762077A (zh) | 2016-07-13 |
CN105762077B true CN105762077B (zh) | 2018-09-07 |
Family
ID=56322772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610310327.8A Active CN105762077B (zh) | 2016-05-12 | 2016-05-12 | 绝缘栅双极晶体管的制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN105762077B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017193321A1 (zh) * | 2016-05-12 | 2017-11-16 | 中山港科半导体科技有限公司 | 绝缘栅双极晶体管结构 |
US10170559B1 (en) * | 2017-06-29 | 2019-01-01 | Alpha And Omega Semiconductor (Cayman) Ltd. | Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0706223A1 (de) * | 1994-10-04 | 1996-04-10 | Siemens Aktiengesellschaft | Durch Feldeffekt steuerbares Halbleiterbauelement |
CN103531621A (zh) * | 2013-10-31 | 2014-01-22 | 厦门大学 | 一种带有侧边多晶硅电极沟槽非穿通型绝缘栅双极晶体管 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020074585A1 (en) * | 1988-05-17 | 2002-06-20 | Advanced Power Technology, Inc., Delaware Corporation | Self-aligned power MOSFET with enhanced base region |
JPH11330458A (ja) * | 1998-05-08 | 1999-11-30 | Toshiba Corp | 半導体装置およびその製造方法 |
-
2016
- 2016-05-12 CN CN201610310327.8A patent/CN105762077B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0706223A1 (de) * | 1994-10-04 | 1996-04-10 | Siemens Aktiengesellschaft | Durch Feldeffekt steuerbares Halbleiterbauelement |
CN103531621A (zh) * | 2013-10-31 | 2014-01-22 | 厦门大学 | 一种带有侧边多晶硅电极沟槽非穿通型绝缘栅双极晶体管 |
Also Published As
Publication number | Publication date |
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CN105762077A (zh) | 2016-07-13 |
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SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170601 Address after: The exhibition of Guangdong Torch Development Zone, 528437 East Road Zhongshan City, No. 16 digital building room 1606 Applicant after: HONSON TECHNOLOGIES LTD. Address before: 528437 No. 32, Dong Dong Road, East Town, Guangdong, Zhongshan Applicant before: ZHONGSHAN GANGKE SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221116 Address after: Room 112-25, No.262, Binhai 4th Road, Hangzhou Bay New District, Ningbo, Zhejiang 315000 Patentee after: Ningbo Anjian Semiconductor Co.,Ltd. Address before: 528437 room 1606, digital building, No. 16, exhibition East Road, Torch Development Zone, Zhongshan City, Guangdong Province Patentee before: HONSON TECHNOLOGIES LTD. |