CN109065447B - 一种功率器件芯片及其制造方法 - Google Patents
一种功率器件芯片及其制造方法 Download PDFInfo
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- CN109065447B CN109065447B CN201810877859.9A CN201810877859A CN109065447B CN 109065447 B CN109065447 B CN 109065447B CN 201810877859 A CN201810877859 A CN 201810877859A CN 109065447 B CN109065447 B CN 109065447B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052786 argon Inorganic materials 0.000 claims abstract description 42
- -1 argon ions Chemical class 0.000 claims abstract description 38
- 210000000746 body region Anatomy 0.000 claims abstract description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 description 6
- 238000010849 ion bombardment Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
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CN201810877859.9A CN109065447B (zh) | 2018-08-03 | 2018-08-03 | 一种功率器件芯片及其制造方法 |
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CN201810877859.9A CN109065447B (zh) | 2018-08-03 | 2018-08-03 | 一种功率器件芯片及其制造方法 |
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CN109065447A CN109065447A (zh) | 2018-12-21 |
CN109065447B true CN109065447B (zh) | 2021-02-26 |
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CN201810877859.9A Active CN109065447B (zh) | 2018-08-03 | 2018-08-03 | 一种功率器件芯片及其制造方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1414609A (zh) * | 2002-07-19 | 2003-04-30 | 上海华虹(集团)有限公司 | 一种抗反射膜SiON表面CH4等离子体处理方法 |
CN1414612A (zh) * | 2002-07-19 | 2003-04-30 | 上海华虹(集团)有限公司 | 抗反射膜SiON表面氢等离子体处理方法 |
CN1540724A (zh) * | 2003-10-30 | 2004-10-27 | 上海集成电路研发中心有限公司 | 一种半导体器件含氮栅氧化硅层结构及其制造工艺 |
CN103035732A (zh) * | 2012-12-17 | 2013-04-10 | 华南理工大学 | 一种vdmos晶体管及其制备方法 |
CN203134802U (zh) * | 2011-06-09 | 2013-08-14 | 中国科学院微电子研究所 | 一种半导体结构 |
CN107316899A (zh) * | 2017-07-14 | 2017-11-03 | 何春晖 | 半超结器件及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004266075A (ja) * | 2003-02-28 | 2004-09-24 | Tokyo Electron Ltd | 基板処理方法 |
CN101330020B (zh) * | 2007-06-22 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | 一种晶圆缺陷的修复方法 |
CN104599961B (zh) * | 2013-11-01 | 2017-10-20 | 上海华虹宏力半导体制造有限公司 | 一种降低氮氧化硅薄膜表面电荷的方法 |
JP2016201454A (ja) * | 2015-04-09 | 2016-12-01 | 信越半導体株式会社 | Soiウェーハの製造方法 |
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2018
- 2018-08-03 CN CN201810877859.9A patent/CN109065447B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1414609A (zh) * | 2002-07-19 | 2003-04-30 | 上海华虹(集团)有限公司 | 一种抗反射膜SiON表面CH4等离子体处理方法 |
CN1414612A (zh) * | 2002-07-19 | 2003-04-30 | 上海华虹(集团)有限公司 | 抗反射膜SiON表面氢等离子体处理方法 |
CN1540724A (zh) * | 2003-10-30 | 2004-10-27 | 上海集成电路研发中心有限公司 | 一种半导体器件含氮栅氧化硅层结构及其制造工艺 |
CN203134802U (zh) * | 2011-06-09 | 2013-08-14 | 中国科学院微电子研究所 | 一种半导体结构 |
CN103035732A (zh) * | 2012-12-17 | 2013-04-10 | 华南理工大学 | 一种vdmos晶体管及其制备方法 |
CN107316899A (zh) * | 2017-07-14 | 2017-11-03 | 何春晖 | 半超结器件及其制造方法 |
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Effective date of registration: 20210204 Address after: 100089 8009, 8th floor, No.13, Sanlihe Road, Haidian District, Beijing Applicant after: Beijing zhongzhao Loongson Software Technology Co.,Ltd. Address before: 518000 Room 601, North block, Chaohua building, 1013 Wenjin Middle Road, Dongmen street, Luohu District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN CHENGLANG TECHNOLOGY Co.,Ltd. |
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Address after: 100089 07B-1, Block B, Floor 7, No. A 28, Xinxi Road, Haidian District, Beijing Patentee after: Beijing zhongzhao Loongson Software Technology Co.,Ltd. Address before: 100089 8009, 8th floor, No.13, Sanlihe Road, Haidian District, Beijing Patentee before: Beijing zhongzhao Loongson Software Technology Co.,Ltd. |