CN108573988B - 电子部件和装备 - Google Patents

电子部件和装备 Download PDF

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Publication number
CN108573988B
CN108573988B CN201810192411.3A CN201810192411A CN108573988B CN 108573988 B CN108573988 B CN 108573988B CN 201810192411 A CN201810192411 A CN 201810192411A CN 108573988 B CN108573988 B CN 108573988B
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China
Prior art keywords
recess
electronic component
face
substrate
device unit
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CN201810192411.3A
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English (en)
Chinese (zh)
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CN108573988A (zh
Inventor
大重秀将
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Canon Inc
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Canon Inc
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Publication of CN108573988A publication Critical patent/CN108573988A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Structure Of Printed Boards (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201810192411.3A 2017-03-09 2018-03-09 电子部件和装备 Active CN108573988B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017044645A JP6968553B2 (ja) 2017-03-09 2017-03-09 電子部品及びその製造方法
JP2017-044645 2017-03-09

Publications (2)

Publication Number Publication Date
CN108573988A CN108573988A (zh) 2018-09-25
CN108573988B true CN108573988B (zh) 2023-05-09

Family

ID=63445588

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810192411.3A Active CN108573988B (zh) 2017-03-09 2018-03-09 电子部件和装备

Country Status (3)

Country Link
US (1) US10367102B2 (enExample)
JP (1) JP6968553B2 (enExample)
CN (1) CN108573988B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102849294B1 (ko) 2021-01-26 2025-08-25 삼성전자주식회사 분리 구조물을 포함하는 이미지 센서

Citations (5)

* Cited by examiner, † Cited by third party
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CN1938867A (zh) * 2004-03-29 2007-03-28 浜松光子学株式会社 半导体光检测元件及其制造方法
CN101351399A (zh) * 2005-11-16 2009-01-21 京瓷株式会社 电子部件密封用基板、可取多个形态的电子部件密封用基板、及使用了电子部件密封用基板的电子装置及其制法
JP2009141092A (ja) * 2007-12-06 2009-06-25 Taiyo Yuden Co Ltd 半導体装置を実装した回路装置及びこれに用いる半導体装置の製造方法
CN102144292A (zh) * 2009-01-19 2011-08-03 松下电器产业株式会社 半导体装置以及其制造方法
JP2016031969A (ja) * 2014-07-28 2016-03-07 ローム株式会社 半導体装置

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US5093708A (en) * 1990-08-20 1992-03-03 Grumman Aerospace Corporation Multilayer integrated circuit module
US5986334A (en) 1996-10-04 1999-11-16 Anam Industrial Co., Ltd. Semiconductor package having light, thin, simple and compact structure
KR101078621B1 (ko) 2003-07-03 2011-11-01 테쎄라 테크놀로지스 아일랜드 리미티드 집적회로 디바이스를 패키징하기 위한 방법 및 장치
JP2005116943A (ja) * 2003-10-10 2005-04-28 Seiko Epson Corp プリント配線基板、実装基板モジュール、プリント配線基板の製造方法、およびそれを用いた電気光学装置、電子機器
JP2006128625A (ja) 2004-09-30 2006-05-18 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US7919410B2 (en) * 2007-03-14 2011-04-05 Aptina Imaging Corporation Packaging methods for imager devices
JP2010238995A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体モジュールおよびこれを搭載したカメラモジュール
JP5694670B2 (ja) 2010-02-05 2015-04-01 キヤノン株式会社 固体撮像装置およびその製造方法
US8558392B2 (en) * 2010-05-14 2013-10-15 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
JP5877291B2 (ja) 2010-05-14 2016-03-08 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
JP2012182309A (ja) * 2011-03-01 2012-09-20 Seiko Instruments Inc 光学デバイス
JP5709165B2 (ja) 2011-03-10 2015-04-30 セイコーインスツル株式会社 光学デバイス
JP6164879B2 (ja) 2013-03-08 2017-07-19 セイコーインスツル株式会社 パッケージ、圧電振動子、発振器、電子機器及び電波時計
JP2015002414A (ja) 2013-06-14 2015-01-05 セイコーインスツル株式会社 電子デバイス
JP6425933B2 (ja) 2014-07-28 2018-11-21 ローム株式会社 半導体装置
JP6554338B2 (ja) 2014-07-28 2019-07-31 ローム株式会社 半導体装置
JP2016100554A (ja) 2014-11-26 2016-05-30 ローム株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1938867A (zh) * 2004-03-29 2007-03-28 浜松光子学株式会社 半导体光检测元件及其制造方法
CN101351399A (zh) * 2005-11-16 2009-01-21 京瓷株式会社 电子部件密封用基板、可取多个形态的电子部件密封用基板、及使用了电子部件密封用基板的电子装置及其制法
JP2009141092A (ja) * 2007-12-06 2009-06-25 Taiyo Yuden Co Ltd 半導体装置を実装した回路装置及びこれに用いる半導体装置の製造方法
CN102144292A (zh) * 2009-01-19 2011-08-03 松下电器产业株式会社 半导体装置以及其制造方法
JP2016031969A (ja) * 2014-07-28 2016-03-07 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
US20180261701A1 (en) 2018-09-13
CN108573988A (zh) 2018-09-25
US10367102B2 (en) 2019-07-30
JP6968553B2 (ja) 2021-11-17
JP2018148155A (ja) 2018-09-20

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