JP6968553B2 - 電子部品及びその製造方法 - Google Patents

電子部品及びその製造方法 Download PDF

Info

Publication number
JP6968553B2
JP6968553B2 JP2017044645A JP2017044645A JP6968553B2 JP 6968553 B2 JP6968553 B2 JP 6968553B2 JP 2017044645 A JP2017044645 A JP 2017044645A JP 2017044645 A JP2017044645 A JP 2017044645A JP 6968553 B2 JP6968553 B2 JP 6968553B2
Authority
JP
Japan
Prior art keywords
device unit
recess
main surface
electronic component
support member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017044645A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018148155A5 (enExample
JP2018148155A (ja
Inventor
秀将 大重
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017044645A priority Critical patent/JP6968553B2/ja
Priority to US15/910,882 priority patent/US10367102B2/en
Priority to CN201810192411.3A priority patent/CN108573988B/zh
Publication of JP2018148155A publication Critical patent/JP2018148155A/ja
Publication of JP2018148155A5 publication Critical patent/JP2018148155A5/ja
Application granted granted Critical
Publication of JP6968553B2 publication Critical patent/JP6968553B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Structure Of Printed Boards (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2017044645A 2017-03-09 2017-03-09 電子部品及びその製造方法 Active JP6968553B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017044645A JP6968553B2 (ja) 2017-03-09 2017-03-09 電子部品及びその製造方法
US15/910,882 US10367102B2 (en) 2017-03-09 2018-03-02 Electronic component and equipment
CN201810192411.3A CN108573988B (zh) 2017-03-09 2018-03-09 电子部件和装备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017044645A JP6968553B2 (ja) 2017-03-09 2017-03-09 電子部品及びその製造方法

Publications (3)

Publication Number Publication Date
JP2018148155A JP2018148155A (ja) 2018-09-20
JP2018148155A5 JP2018148155A5 (enExample) 2020-04-16
JP6968553B2 true JP6968553B2 (ja) 2021-11-17

Family

ID=63445588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017044645A Active JP6968553B2 (ja) 2017-03-09 2017-03-09 電子部品及びその製造方法

Country Status (3)

Country Link
US (1) US10367102B2 (enExample)
JP (1) JP6968553B2 (enExample)
CN (1) CN108573988B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102849294B1 (ko) 2021-01-26 2025-08-25 삼성전자주식회사 분리 구조물을 포함하는 이미지 센서

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093708A (en) * 1990-08-20 1992-03-03 Grumman Aerospace Corporation Multilayer integrated circuit module
US5986334A (en) 1996-10-04 1999-11-16 Anam Industrial Co., Ltd. Semiconductor package having light, thin, simple and compact structure
KR101078621B1 (ko) 2003-07-03 2011-11-01 테쎄라 테크놀로지스 아일랜드 리미티드 집적회로 디바이스를 패키징하기 위한 방법 및 장치
JP2005116943A (ja) * 2003-10-10 2005-04-28 Seiko Epson Corp プリント配線基板、実装基板モジュール、プリント配線基板の製造方法、およびそれを用いた電気光学装置、電子機器
JP4331033B2 (ja) * 2004-03-29 2009-09-16 浜松ホトニクス株式会社 半導体光検出素子及びその製造方法
JP2006128625A (ja) 2004-09-30 2006-05-18 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
KR100998499B1 (ko) * 2005-11-16 2010-12-06 쿄세라 코포레이션 전자 부품 밀봉용 기판, 복수개 분할 형태의 전자 부품밀봉용 기판, 전자 부품 밀봉용 기판을 사용한 전자 장치,및 전자 장치의 제조 방법
US7919410B2 (en) * 2007-03-14 2011-04-05 Aptina Imaging Corporation Packaging methods for imager devices
JP2009141092A (ja) * 2007-12-06 2009-06-25 Taiyo Yuden Co Ltd 半導体装置を実装した回路装置及びこれに用いる半導体装置の製造方法
JP2010166004A (ja) * 2009-01-19 2010-07-29 Panasonic Corp 半導体装置及びその製造方法
JP2010238995A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体モジュールおよびこれを搭載したカメラモジュール
JP5694670B2 (ja) 2010-02-05 2015-04-01 キヤノン株式会社 固体撮像装置およびその製造方法
JP5877291B2 (ja) 2010-05-14 2016-03-08 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
US8558392B2 (en) * 2010-05-14 2013-10-15 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
JP2012182309A (ja) * 2011-03-01 2012-09-20 Seiko Instruments Inc 光学デバイス
JP5709165B2 (ja) 2011-03-10 2015-04-30 セイコーインスツル株式会社 光学デバイス
JP6164879B2 (ja) 2013-03-08 2017-07-19 セイコーインスツル株式会社 パッケージ、圧電振動子、発振器、電子機器及び電波時計
JP2015002414A (ja) 2013-06-14 2015-01-05 セイコーインスツル株式会社 電子デバイス
JP6554338B2 (ja) * 2014-07-28 2019-07-31 ローム株式会社 半導体装置
JP6425933B2 (ja) 2014-07-28 2018-11-21 ローム株式会社 半導体装置
JP6373678B2 (ja) * 2014-07-28 2018-08-15 ローム株式会社 半導体装置
JP2016100554A (ja) 2014-11-26 2016-05-30 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN108573988B (zh) 2023-05-09
US10367102B2 (en) 2019-07-30
CN108573988A (zh) 2018-09-25
US20180261701A1 (en) 2018-09-13
JP2018148155A (ja) 2018-09-20

Similar Documents

Publication Publication Date Title
US10249672B2 (en) Image pickup apparatus, semiconductor apparatus, and image pickup unit
JP5183708B2 (ja) 半導体装置およびその製造方法
JP4722702B2 (ja) 半導体パッケージおよびその製造方法
US9123618B2 (en) Method for producing image pickup apparatus, and method for producing semiconductor apparatus
US10109663B2 (en) Chip package and method for forming the same
US9231018B2 (en) Wafer level packaging structure for image sensors and wafer level packaging method for image sensors
US9601531B2 (en) Wafer-level packaging structure for image sensors with packaging cover dike structures corresponding to scribe line regions
TWI539538B (zh) 半導體裝置及其製造方法
WO2013103136A1 (ja) 半導体装置およびその製造方法
US20190006305A1 (en) Semiconductor package structure and manufacturing method thereof
US9362134B2 (en) Chip package and fabrication method thereof
US20090050995A1 (en) Electronic device wafer level scale packges and fabrication methods thereof
CN101533815B (zh) 半导体器件及其制造方法
CN103779245A (zh) 芯片封装方法及封装结构
US20110306167A1 (en) Methods of Packaging Semiconductor Devices Including Bridge Patterns
US10347616B2 (en) Chip package and manufacturing method thereof
JP6968553B2 (ja) 電子部品及びその製造方法
JP4248355B2 (ja) 半導体装置および半導体装置の製造方法
TW201537734A (zh) 半導體結構的製造方法
CN203746835U (zh) 封装结构
JP7273153B2 (ja) 基板貫通ビアを有する半導体デバイスおよび基板貫通ビアを有する半導体デバイスの製造方法
JP5414965B2 (ja) 光学半導体装置及びその製造方法
JP2005302816A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20171214

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200303

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200303

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210409

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210928

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211027

R151 Written notification of patent or utility model registration

Ref document number: 6968553

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151