CN108538855B - 一种阵列基板的制作方法 - Google Patents

一种阵列基板的制作方法 Download PDF

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CN108538855B
CN108538855B CN201810293048.4A CN201810293048A CN108538855B CN 108538855 B CN108538855 B CN 108538855B CN 201810293048 A CN201810293048 A CN 201810293048A CN 108538855 B CN108538855 B CN 108538855B
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朱茂霞
徐洪远
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本发明提供的阵列基板制作方法，通过对第一光刻胶图案进行灰化处理，以去除光刻胶部分保留区域的光刻胶并减薄光刻胶完全保留区域的光刻胶以形成第二光刻胶图案，其中，光刻胶部分保留区域和光刻胶完全保留区域的表面均为绒面；随后以第二光刻胶图案作为掩膜对钝化层进行刻蚀，以减薄光刻胶部分保留区域的钝化层，并消除光刻胶部分保留区域上形成的绒面，从而可以提高制程的稳定性。

Description

一种阵列基板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板的制作方法。
背景技术
近年来，显示技术得到快速的发展，液晶显示器已日益深入人们的日常生活中。液晶显示器的主要包括阵列基板、对置基板、以及夹设在两者之间的液晶层，其中，阵列基板中设置有薄膜晶体管，液晶显示器可通过与薄膜晶体管相连的像素电极和公共电极之间产生的电场来实现对液晶层的驱动控制，从而实现图像显示。
现有的阵列基板制程采用的三道光罩工艺通常是通过直接在光刻胶上形成绒面，利用绒面高低起伏的表面特征，可使覆盖在其表面的像素电极断裂，从而可以使得剥离液与光刻胶接触，提高剥离效率。然而，在光刻胶上形成绒面时，往往也会在在钝化层上形成绒状物，且钝化层上的绒状物无法用水、剥离液、风枪去除，对制程稳定性及显示带来影响。
发明内容
本发明实施例提供一种阵列基板的制作方法，该阵列基板的制作方法可提高制程的稳定性。
本发明实施例提供一种阵列基板的制作方法，其包括：
在衬底基版上形成钝化层；
在所述钝化层上形成光刻胶，并通过曝光和显影工艺形成包括光刻胶完全保留区域、光刻胶部分保留区域以及光刻胶完全去除区域的第一光刻胶图案；
以所述第一光刻胶图案作为掩膜对所述钝化层进行刻蚀以在所述钝化层中形成第一过孔；
对所述第一光刻胶图案进行灰化处理，以去除所述光刻胶部分保留区域的所述光刻胶并减薄所述光刻胶完全保留区域的所述光刻胶以形成第二光刻胶图案，其中，所述光刻胶部分保留区域和所述光刻胶完全保留区域的表面均为绒面；
以所述第二光刻胶图案作为掩膜对所述钝化层进行刻蚀，以减薄所述光刻胶部分保留区域的所述钝化层，并消除所述光刻胶部分保留区域上形成的绒面；
在本发明的阵列基板的制作方法中，所述以所述第二光刻胶图案作为掩膜对所述钝化层进行刻蚀，以减薄所述光刻部分保留区域的所述钝化层，并消除所述光刻胶部分保留区域上形成的绒面的步骤之后，包括：
在包括所述钝化层和所述光刻胶的所述衬底基板上沉积像素电极；
通过剥离液去除所述光刻胶以形成像素电极图案。
在本发明的阵列基板的制作方法中，在所述以所述第二光刻胶图案作为掩膜对所述钝化层进行刻蚀，以减薄所述光刻部分保留区域的所述钝化层，并消除所述光刻胶部分保留区域上形成的绒面的步骤之后与所述在包括所述钝化层和所述光刻胶的所述衬底基板上沉积像素电极的步骤之前，包括：
对所述第二光刻胶图案进行灰化处理，以增加减薄后的所述光刻胶完全保留区域上的绒状分布。
在本发明的阵列基板的制作方法中，所述灰化处理为氧气等离子体灰化处理。
在本发明的阵列基板的制作方法中，所述在所述衬底基板上形成钝化层的步骤之前，还包括：
在所述衬底基板上形成薄膜晶体管图案。
在本发明的阵列基板的制作方法中，利用灰色调掩模板或半色调掩模板作为掩模板对所述光刻胶进行曝光、显影以形成具有所述光刻胶完全保留区域、所述光刻胶部分保留区域以及所述光刻胶完全去除区域的所述第一光刻胶图案。
在本发明的阵列基板的制作方法中，所述灰色调掩模板或半色调掩模板的全透光区域对应所述第一光刻胶图案的所述光刻胶完全去除区域，所述灰色调掩模板或半色调掩模板的半透光区域对应所述第一光刻胶图案的所述光刻胶部分保留区域，所述灰色调掩模板或半色调掩模板的不透光区域对应所述第一光刻胶的所述光刻胶完全保留区域。
在本发明的阵列基板的制作方法中，所述第一光刻胶图案的所述光刻胶完全去除区域对应所述钝化层上待形成所述第一过孔的区域；所述第一光刻胶图案的所述光刻胶部分保留区域对应所述钝化层上待减薄的区域。
在本发明的阵列基板的制作方法中，所述绒面上具有多个间隔设置的凸起峰。
在本发明的阵列基板的制作方法中，所述刻蚀为干刻蚀。
本发明提供的阵列基板制作方法，通过对第一光刻胶图案进行灰化处理，以去除光刻胶部分保留区域的光刻胶并减薄光刻胶完全保留区域的光刻胶以形成第二光刻胶图案，其中，光刻胶部分保留区域和光刻胶完全保留区域的表面均为绒面；随后以第二光刻胶图案作为掩膜对钝化层进行刻蚀，以减薄光刻胶部分保留区域的钝化层，并消除光刻胶部分保留区域上形成的绒面，从而可以提高制程的稳定性。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的阵列基板的制作方法的流程示意图；
图2A-2I为本发明实施例提供的阵列基板的制作方法的具体步骤示意图；
图3为本发明实施例提供的阵列基板的制作方法的另一流程示意图；
图4本发明实施例提供的阵列基板的制作方法的另一流程示意图。
具体实施方式
以上对本发明实施例提供的阵列基板的制作方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明。同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
请参阅图1，图1为本发明实施例提供的阵列基板的制作方法的流程示意图。如图1所示，本发明实施例提供的阵列基板的制作方法，包括以下步骤：
步骤S101，在衬底基版上形成钝化层；
步骤S102，在所述钝化层上形成光刻胶，并通过曝光和显影工艺形成包括光刻胶完全保留区域、光刻胶部分保留区域以及光刻胶完全去除区域的第一光刻胶图案；
步骤S103，以所述第一光刻胶图案作为掩膜对所述钝化层进行刻蚀以在所述钝化层中形成第一过孔；
步骤S104，对所述第一光刻胶图案进行灰化处理，以去除所述光刻胶部分保留区域的所述光刻胶并减薄所述光刻胶完全保留区域的所述光刻胶以形成第二光刻胶图案，其中，所述光刻胶部分保留区域和所述光刻胶完全保留区域的表面均为绒面；
步骤S105，以所述第二光刻胶图案作为掩膜对所述钝化层进行刻蚀，以减薄所述光刻胶部分保留区域的所述钝化层，并消除所述光刻胶部分保留区域上形成的绒面。
其中，在步骤S101中，如图2A所示，提供衬底基板101，在衬底基板101上形成钝化层106。例如，衬底基板101可为玻璃基板、石英基板、树脂基板或其他基板；钝化层106的材料可为氮化硅(SiNx)、氧化硅(SiOX)或氮氧化硅(SiNxOy)等无机绝缘材料或聚酰亚胺等有机绝缘材料。例如，钝化层106可采用蒸镀工艺、化学气相沉积工艺、涂覆工艺、溶胶-凝胶工艺或其他工艺形成在衬底基板上。
另外，请继续参阅图2A，本本发明实施例的阵列基板制作方法，在步骤S101之前，还包括，在衬底基板上形成薄膜晶体管图案，具体的：在衬底基板101上形成栅极102；在栅极102上形成栅极绝缘层103；在栅极绝缘层103上形成有源层104；以及在有源层104上形成与有源层104相连的源极1051和漏极1052，钝化层106形成在源极1051和漏极1052上。
其中，在步骤S102中，如图2B、2C所示，在钝化层106上形成光刻胶107，并通过曝光和显影工艺形成包括光刻胶完全保留区域1071、光刻胶部分保留区域1072以及光刻胶完全去除区域1073的第一光刻胶图案。
例如，先在钝化层106上形成一层光刻胶107，然后利用灰色调掩模板或半色调掩模板150作为掩模板对光刻胶107进行曝光、显影以形成具有光刻胶完全保留区域1071、光刻胶部分保留区域1072以及光刻胶完全去除区域1073的第一光刻胶图案。
例如，灰色调掩模板或半色调掩模板150的全透光区域1503可对应第一光刻胶图案的光刻胶完全去除区域1073，灰色调掩模板或半色调掩模板150的半透光区域1502对应第一光刻胶图案的光刻胶部分保留区域1072，灰色调掩模板或半色调掩模板150的不透光区域1501对应第一光刻胶的光刻胶完全保留区域1073。当然，这里是以正性光刻胶为例进行了描述，但本实施例包括但不限于此。
其中，在步骤S103中，如图2D所示，以第一光刻胶图案作为掩膜对钝化层106进行刻蚀以在钝化层106中形成第一过孔,使位于该第一过孔处的漏极1052裸露，以便后续形成的像素电极与漏极1052电连接。
其中，在步骤S104中，如图2E所示，灰化第一光刻胶图案以去除光刻胶部分保留区域1702的光刻胶107并减薄光刻胶完全保留区域1071的光刻胶107以形成第二光刻胶图案，所述光刻胶部分保留区域1072和所述光刻胶完全保留区域1071的表面均为绒面。需要说明的是，所谓绒面是指光刻胶107表面粗糙度很大，在光刻胶平面上方形成多个间隔设置的凸起峰108。
其中，在步骤S105中，如图2F所示，以第二光刻胶图案为掩膜对钝化层106进行刻蚀以减薄光刻胶部分保留区域1072的钝化层106，并消除光刻胶部分保留区域1072上形成的绒面。需要说明的是，在光刻胶部分保留区域1072形成的绒面直接与钝化层106接触，且该处形成的绒面无法用水、剥离液、或者风枪等去除，本发明实施例通过减薄光刻胶部分保留区域1072的钝化层106，从而消除光刻胶部分保留区域1072上形成的绒面，避免光刻胶部分保留区域1072上形成的绒面对后续制程造成影响，从而提高了制程的稳定性，另外，此时光刻胶完全保留区域1071上形成的绒面仍存在。
在本发明实施例中，第一光刻胶图案的光刻胶完全去除区域1073对应钝化层106上待形成第一过孔的区域；第一光刻胶图案的光刻胶部分保留区域1072对应钝化层106上待减薄的区域。由此，可通过刻蚀工艺在钝化层106上对应于第一光刻胶图案的光刻胶完全去除区域1073的区域形成第一过孔，通过灰化工艺去除第一光刻胶图案的光刻胶部分保留区域1072，再通过刻蚀工艺减薄钝化层106上对应于第一光刻胶图案的光刻胶部分保留区域1072的区域。需要说明的是，上述的刻蚀工艺可以干刻蚀，上述的灰化工艺可以为氧气等离子体灰化，本发明实施例在此不作限制。
进一步的，请参阅图3，图3为本发明实施例提供的阵列基板的制作方法的另一流程示意图。如图3所示，本发明实施例的阵列基板的制作方法，在步骤S105之后，还包括步骤S107，在包括所述钝化层和所述光刻胶的所述衬底基板上沉积像素电极。
例如，如图2G所示，在包括钝化层106和光刻胶107的衬底基板101上沉积像素电极109。
请继续参阅图3，如图3所示，本发明实施例的阵列基板的制作方法，在步骤S107之后，还包括步骤S108，通过剥离液去除所述光刻胶以形成像素电极图案。
例如，如图2H所示，通过剥离液去除所述光刻胶107以形成像素电极图案。需要说明的是，由于光刻胶完全保留区域1071上形成的绒面，从而可以利用该绒面高低起伏的表面特征，使覆盖在其表面的像素电极109断裂，剥离液可通过裂缝与下面的光刻胶107接触，进而提高了效率。
特别的，请参阅图4，图4本发明实施例提供的阵列基板的制作方法的另一流程示意图。如图4所示，本发明实施例的阵列基板制作方法，在步骤SS105之后，以及步骤S107之前，还包括步骤S106，对所述第二光刻胶图案进行灰化处理，以增加减薄后的所述光刻胶完全保留区域上的绒状分布。
例如，如图2I所示，对第二光刻胶图案进行灰化处理，从而增加减薄后的光刻胶完全保留区域1071上的绒状分布。需要说明的是，在步骤S104中已经通过灰化处理在光刻胶完全保留区域上形成绒面，但是由于在步骤S105中通过刻蚀消除光刻胶部分保留区域上形成的绒面，使得此时光刻胶完全保留区域上形成的绒面的绒状分布有所损耗，本发明实施例通过对第二光刻胶图案进行灰化处理，增加减薄后的光刻胶完全保留区域上的绒状分布。上述的灰化工艺可以为氧气等离子体灰化，本发明实施例在此不作限制。
本发明提供的阵列基板制作方法，通过对第一光刻胶图案进行灰化处理，以去除光刻胶部分保留区域的光刻胶并减薄光刻胶完全保留区域的光刻胶以形成第二光刻胶图案，其中，光刻胶部分保留区域和光刻胶完全保留区域的表面均为绒面；随后以第二光刻胶图案作为掩膜对钝化层进行刻蚀，以减薄光刻胶部分保留区域的钝化层，并消除光刻胶部分保留区域上形成的绒面，从而可以提高制程的稳定性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (8)

1.一种阵列基板的制作方法，其特征在于，包括：
在衬底基版上形成钝化层；
在所述钝化层上形成光刻胶，并通过曝光和显影工艺形成包括光刻胶完全保留区域、光刻胶部分保留区域以及光刻胶完全去除区域的第一光刻胶图案；
以所述第一光刻胶图案作为掩膜对所述钝化层进行刻蚀以在所述钝化层中形成第一过孔；
对所述第一光刻胶图案进行灰化处理，以去除所述光刻胶部分保留区域的所述光刻胶并减薄所述光刻胶完全保留区域的所述光刻胶以形成第二光刻胶图案，其中，所述光刻胶部分保留区域和所述光刻胶完全保留区域的表面均为绒面；
以所述第二光刻胶图案作为掩膜对所述钝化层进行刻蚀，以减薄所述光刻胶部分保留区域的所述钝化层，并消除所述光刻胶部分保留区域上形成的绒面；
所述以所述第二光刻胶图案作为掩膜对所述钝化层进行刻蚀，以减薄所述光刻部分保留区域的所述钝化层，并消除所述光刻胶部分保留区域上形成的绒面的步骤之后，包括：
在包括所述钝化层和所述光刻胶的所述衬底基板上沉积像素电极；
通过剥离液去除所述光刻胶以形成像素电极图案；
在所述以所述第二光刻胶图案作为掩膜对所述钝化层进行刻蚀，以减薄所述光刻部分保留区域的所述钝化层，并消除所述光刻胶部分保留区域上形成的绒面的步骤之后与所述在包括所述钝化层和所述光刻胶的所述衬底基板上沉积像素电极的步骤之前，包括：
对所述第二光刻胶图案进行灰化处理，以增加减薄后的所述光刻胶完全保留区域上的绒状分布。
2.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述灰化处理为氧气等离子体灰化处理。
3.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述在所述衬底基板上形成钝化层的步骤之前，还包括：
在所述衬底基板上形成薄膜晶体管图案。
4.根据权利要求1所述的阵列基板的制作方法，其特征在于，利用灰色调掩模板或半色调掩模板作为掩模板对所述光刻胶进行曝光、显影以形成具有所述光刻胶完全保留区域、所述光刻胶部分保留区域以及所述光刻胶完全去除区域的所述第一光刻胶图案。
5.根据权利要求4所述的阵列基板的制作方法，其特征在于，所述灰色调掩模板或半色调掩模板的全透光区域对应所述第一光刻胶图案的所述光刻胶完全去除区域，所述灰色调掩模板或半色调掩模板的半透光区域对应所述第一光刻胶图案的所述光刻胶部分保留区域，所述灰色调掩模板或半色调掩模板的不透光区域对应所述第一光刻胶的所述光刻胶完全保留区域。
6.根据权利要求1-5任一项所述的阵列基板的制作方法，其特征在于，所述第一光刻胶图案的所述光刻胶完全去除区域对应所述钝化层上待形成所述第一过孔的区域；所述第一光刻胶图案的所述光刻胶部分保留区域对应所述钝化层上待减薄的区域。
7.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述绒面上具有多个间隔设置的凸起峰。
8.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述刻蚀为干刻蚀。
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CN106783885A (zh) * 2017-01-03 2017-05-31 深圳市华星光电技术有限公司 Tft基板的制作方法

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