CN108463576A - 在基板上形成电路的方法 - Google Patents

在基板上形成电路的方法 Download PDF

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Publication number
CN108463576A
CN108463576A CN201680078732.XA CN201680078732A CN108463576A CN 108463576 A CN108463576 A CN 108463576A CN 201680078732 A CN201680078732 A CN 201680078732A CN 108463576 A CN108463576 A CN 108463576A
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substrate
circuit
plating
catalyst metals
coating
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CN201680078732.XA
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CN108463576B (zh
Inventor
佐土原大祐
西川贤
西川贤一
铃木启太
伊部公太
下田胜己
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JCU Corp
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JCU Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4661—Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073—Multistep pretreatment
    • C23C18/208—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1641—Organic substrates, e.g. resin, plastic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1841—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1868—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
    • C23C18/204—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
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    • C23C18/206—Use of metal other than noble metals and tin, e.g. activation, sensitisation with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
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    • C23C18/2066—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C—CHEMISTRY; METALLURGY
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/28—Sensitising or activating
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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Abstract

本发明提供无论基板的种类如何均能够以少的工序在基板上的期望部位进行金属镀敷而形成电路的新的方法。一种在基板上形成电路的方法，其特征在于，包括如下工序：通过镀敷在基板上进行电路的形成时，在基板上施加含有硅低聚物和催化剂金属的涂布覆膜后，进行涂布覆膜中的催化剂金属的活化处理而使其表现出自催化性，接下来进行无电解镀敷。

Description

在基板上形成电路的方法
技术领域
本发明涉及在基板上形成电路的方法等。
背景技术
利用镀敷在基板上形成电路需要历经多个工序。例如，基板为树脂时，利用如下那样的工序来进行(非专利文献1)。
<减成法>
(A1)在基板上进行蚀刻等，使表面粗糙。
(A2)利用调节剂对基板赋予亲水性。
(A3)对基板上赋予催化剂。
(A4)对基板进行无电解镀铜或无电解镀镍。
(A5)对基板进行电解镀铜。
(A6)在电解铜镀层上形成抗蚀图案。
(A7)进行不需要的电解镀层和无电解镀层的剥离以及抗蚀层的剥离，形成电路。
<半加成法>
(B1)在基板上进行蚀刻等，使表面粗糙。
(B2)利用调节剂对基板赋予亲水性。
(B3)对基板上赋予催化剂。
(B4)对基板进行无电解镀铜或无电解镀镍。
(B5)在无电解镀层上形成抗蚀图案后，进行电解镀铜。
(B6)进行不需要的抗蚀层及其下方的无电解镀层的剥离，形成电路。
此外，利用镀敷在基板上进行的装饰用镀敷用途的整面镀敷和部分镀敷也与在上述基板上形成电路同样地需要历经多个工序。
像这样，为了在各种基板上对包括电路形成在内的期望部位进行金属镀敷，必须历经与基板相符的多个工序。
现有技术文献
非专利文献
非专利文献1：齐藤围等、“新镀敷技术”、关东学院大学出版会、P281～292
发明内容
发明要解决的问题
因此，本发明的课题在于，提供无论基板的种类如何均能够以少的工序在基板上的期望部位进行金属镀敷而形成电路的新的方法。
用于解决问题的方案
本发明人等为了解决上述课题而进行了深入研究，结果发现：在形成电路时，通过利用含有硅低聚物和催化剂金属的涂布覆膜，无论基板的种类如何均能够以少的工序对期望部位进行金属镀敷，能够形成电路，从而完成了本发明。
即，本发明是一种在基板上形成电路的方法，其特征在于，包括如下工序：通过镀敷在基板上进行电路的形成时，
在基板上施加含有硅低聚物和催化剂金属的涂布覆膜后，进行涂布覆膜中的催化剂金属的活化处理而使其表现出自催化性，接下来进行无电解镀敷。
此外，本发明是一种电路，其特征在于，通过上述在基板上形成电路的方法而得到并依次层叠有基板、含有硅低聚物和催化剂金属的涂布覆膜、无电解镀层、电解镀层。
此外，本发明人等发现：通过对含有硅低聚物和催化剂金属的涂布覆膜的想要实施镀敷的期望部位照射450nm以下的可见光和紫外线，涂布覆膜中的催化剂金属会表现出自催化性，并且，由此可进行无电解镀敷，从而完成了本发明。
即，本发明是一种对基材进行镀敷的方法，其特征在于，对基材施加含有硅低聚物和催化剂金属的涂布覆膜后，对想要实施镀敷的期望部位照射450nm以下的可见光和紫外线而使涂布覆膜中的催化剂金属表现出自催化性，接下来进行无电解镀敷。
发明效果
根据本发明，通过在电路的形成中利用含有硅低聚物和催化剂金属的涂布覆膜，即使不对各基板进行前处理等也会变得良好，因此，无论基板的种类如何均可减少对基板的期望部位进行金属镀敷的工序。
因此，如果将本发明用于半导体的电路制造，则与以往相比，能够以更少的工序来形成电路。
此外，根据本发明，通过对设置于基材的含有硅低聚物和催化剂金属的涂布覆膜的想要实施镀敷的期望部位照射450nm以下的可见光和紫外线，能够对基材的期望部位进行镀敷。
因此，本发明可用于对基材的期望部位进行镀敷。
附图说明
图1是实施例1中得到的镀敷后的基板的照片。
图2是实施例2中得到的镀敷后的基板的照片。
图3是实施例3中得到的镀敷后的基板的照片。
图4是实施例4中得到的镀敷后的基板的照片。
具体实施方式
本发明的在基板上形成电路的方法(以下称为“本发明方法”)在通过镀敷在基板上进行电路的形成时包括如下工序即可：
在基板上施加含有硅低聚物和催化剂金属的涂布覆膜后，进行涂布覆膜中的催化剂金属的活化处理而使其表现出自催化性，接下来进行无电解镀敷。
由于含有硅低聚物和催化剂金属的涂布覆膜具有良好的附着性，通过活化处理而能够表现出自催化性，因此，本发明方法中使用的基板的原料没有特别限定，除了金属、树脂、玻璃等之外，还可以是以往认为是难镀敷性的木、纸等中的任一者。这些之中，优选为树脂、玻璃。作为该树脂，例如可列举出ABS、聚丙烯、聚乙烯、聚碳酸酯、环氧系树脂、酚系树脂、氨基甲酸酯系树脂等。这些树脂可以使用1种或2种以上。需要说明的是，从密合性等的观点出发，优选使用向这些树脂中添加无机氧化物、无机氮化物、无机硫化物等填料而得到的产物。这些填料可以向树脂中添加1种或2种以上。需要说明的是，以往的电路形成方法中，使用添加有填料的树脂时，必须通过在碱溶液中浸渍来去除填料或者通过去污处理等进行粗化处理，但本发明方法中没有这个必要。
本发明方法中，施加含有硅低聚物和催化剂金属的涂布覆膜的方法没有特别限定，例如可列举出用以下的含有含催化剂金属硅低聚物的涂布剂对基板进行处理的方法。
具体而言，利用含有含催化剂金属硅低聚物的涂布剂进行处理，所述含催化剂金属硅低聚物是通过使四烷氧基硅烷与至少在n、n+1位或n、n+2位(其中，n为1以上的整数)键合有羟基的多元醇在催化剂金属的存在下发生缩合反应而得到。
上述四烷氧基硅烷没有特别限定，例如可列举出四甲氧基硅烷、四乙氧基硅烷、四丁氧基硅烷等，这些之中，优选为四乙氧基硅烷。这些四烷氧基硅烷可以为1种或者组合2种以上。
此外，上述至少在n、n+1位或n、n+2位(其中，n为1以上的整数)键合有羟基的多元醇没有特别限定，例如可列举出n为1～3的整数的二元醇～四元醇，优选n为1～2的整数的二元醇～三元醇等。作为这些多元醇的具体例，例如可列举出乙二醇、1，2-丙二醇、1，3-丙二醇、1，2-丁二醇、1，3-丁二醇、2，3-丁二醇、2-甲基-1，3-丙二醇、1，2-戊二醇、1，3-戊二醇、2，3-戊二醇、2，4-戊二醇等二元醇；甘油等三元醇等；赤藓醇等四元醇。这些多元醇之中，优选为二元醇，更优选为乙二醇和/或1，3-丙二醇，特别优选为乙二醇。这些多元醇可以使用1种或者组合使用2种以上。
进而，上述催化剂金属不是对四烷氧基硅烷与多元醇的缩合反应具有催化作用的金属，而是对后述镀层的析出反应具有自催化作用的金属。因此，与WO2014/207885、WO2014/207886中提及的金属催化剂并不相同。作为这样的催化剂金属，可列举出例如铁、镍、钴、铜、钯、银、金、铂等。这些催化剂金属之中，优选为铁、镍、钴、铜、钯，更优选为铁、镍、铜、钯，特别优选为钯。需要说明的是，上述催化剂金属在发生缩合反应时，优选以溶解于上述多元醇的状态存在，此时，优选利用例如包含氯化铁、氯化镍、氯化铜、氯化钯、氯化金(III)、氯化银(I)、氯化铂(IV)等催化剂金属的金属盐。需要说明的是，在催化剂金属难以溶于多元醇的情况下，可以使其预先溶解于盐酸等无机酸。这些催化剂金属可以使用1种或组合使用2种以上，此时，优选至少包含钯。
使上述四烷氧基硅烷与多元醇在催化剂金属的存在下发生缩合反应的方法没有特别限定，例如，向上述多元醇中添加0.01g/kg～20g/kg、优选0.1g/kg～10g/kg的催化剂金属，使其溶解后，一边搅拌一边加热至反应温度为止，进一步添加四烷氧基硅烷，使其反应即可。反应温度为25℃～150℃、优选为30℃～70℃，反应时间为30分钟～8小时、优选为2小时～4小时。需要说明的是，上述反应时，重要的是，使四烷氧基硅烷与多元醇以4∶1～1∶4、优选以1∶2～1∶4的摩尔比发生反应。由此，在四烷氧基硅烷与四烷氧基硅烷之间引入多元醇。
需要说明的是，上述反应时会生成醇，但通过不分馏出该醇而使聚合反应得以控制，因此优选不分馏出醇。
此外，上述反应中，四烷氧基硅烷与多元醇在发生缩合反应之前分离成2层，但反应结束时成为1层，因此，可以在成为1层的时刻结束反应。
由此得到的含催化剂金属硅低聚物是在2～4个四烷氧基硅烷与1～13个多元醇发生缩合反应而得到的硅低聚物中引入了催化剂金属。
需要说明的是，含催化剂金属硅低聚物是通过使四烷氧基硅烷的烷氧基与多元醇中存在的n、n+1位或n、n+2位的1个或2个羟基发生缩合反应而得到，例如具有下述(a)～(d)那样的部分结构。并且可推测：本发明的含催化剂金属硅低聚物中，催化剂金属存在于氧原子之间，形成以催化剂金属为顶点的五元环结构或六元环结构，从而实现稳定化。因此，本发明的含催化剂金属硅低聚物即使在生成后经过1年，也观察不到催化剂金属的沉淀。
这样的含催化剂金属硅低聚物可通过1HNMR、29SiNMR等NMR、IR、MASS等公知方法进行鉴定。具体而言，如果是NMR，则利用1HNMR来确认通过四烷氧基硅烷与多元醇的缩合反应而生成的醇，进而利用29SiNMR来确认含催化剂金属硅低聚物中的硅数，由此能够鉴定含催化剂金属硅低聚物。此外，在硅低聚物中引入了催化剂金属可通过在生成硅低聚物后经过一定期间后、例如经过1年后观察不到催化剂金属的沉淀来确以。
该含催化剂金属硅低聚物与以往的硅低聚物同样地，可作为涂布剂而对基板的表面等进行处理。特别是，该含催化剂金属硅低聚物在其结构中引入有催化剂金属，因此，在利用涂布剂对基板进行处理后，通过进行活化处理而能够对基板赋予自催化性、导电性。
含有含催化剂金属硅低聚物的涂布剂只要含有含催化剂金属硅低聚物即可，例如，通过将所含的催化剂金属不同的两种以上的含催化剂金属硅低聚物组合使用，或者在制备含催化剂金属硅低聚物时使用在两种以上的催化剂金属的存在下制备得到的产物，催化剂金属的催化剂作用得以增强，因此优选。此外，作为催化剂金属的组合，没有特别限定，例如优选为钯与选自铁、镍、钴、铜中的1种以上的组合。
上述涂布剂可以含有例如添加至现有公知的涂布剂中的溶剂、用于提高对基板的润湿性的树脂等。这样的涂布剂可通过适当搅拌并混合上述成分来制备。
作为添加至上述涂布剂中的溶剂，没有特别限定，例如可列举出水、异丙醇、乙基溶纤剂等。需要说明的是，本发明的含催化剂金属硅低聚物如果用例如聚乙二醇、乙基溶纤剂等二醇系溶剂进行稀释，则即使在水分存在下也能够稳定地保存。特别是，作为二醇系溶剂，通过使用聚乙二醇200～1000、优选使用聚乙二醇200，即使在水分存在下也能够长期稳定地保存。
此外，作为添加至上述涂布剂中的树脂，只要是可溶或分散至涂布剂的树脂，就没有特别限定，例如可列举出丙烯酸系树脂、氨基甲酸酯系树脂、酚系树脂、环氧系树脂等。此外，这些树脂之中，优选为丙烯酸系树脂，更优选为甲基丙烯酸烷基酯共聚物、胶体二氧化硅/丙烯酸类复合物、乙烯/丙烯酸共聚物铵盐，特别优选为甲基丙烯酸烷基酯共聚物。这些树脂可以使用1种或2种以上。此外，这些树脂可以是溶液状或粉末状。这些树脂在涂布剂中配合50质量％(以下简称为“％”)以下、优选为0.1％～50％、更优选为1％～20％。
进而，上述涂布剂中，可以在不损害含催化剂金属硅低聚物的效果的范围内配合着色剂、摩擦系数调节剂、增膜剂、赋予其它功能性那样的添加剂。
利用上述涂布剂对基板进行处理的方法与现有公知的涂布剂相同即可，例如利用浸渍旋涂法等浸渍法、喷涂法等喷雾法等对基板的整面进行处理即可。在上述处理后，直接干燥或者用暖风等使其干燥即可。此外，涂布的厚度没有特别限定，只要覆盖基板的整面即可。
如上所述在基板上施加含有硅低聚物和催化剂金属的涂布覆膜后，进行涂布覆膜中的催化剂金属的活化处理而使其表现出自催化性。
关于催化剂金属的活化处理，活化处理配合着基板的特性来适当进行即可。作为活化处理，例如可列举出450nm以下的可见光和紫外线的照射、加热、化学还原等。可以将这些活化处理适当组合来进行。这些活化处理之中，由于与基板种类无关，因此，优选为450nm以下的可见光和紫外线的照射，特别是优选照射不会生成臭氧的254nm～365nm的光。
上述450nm以下的可见光和紫外线的照射使用例如DUV曝光光源装置(UIS-2511DUZ8-AUM01：Ushio，Inc.制)等紫外线照射器等进行数分钟左右即可。
上述加热没有特别限定，例如利用烘箱、电炉等将上述温度维持10分钟～2小时左右即可。加热处理的气氛没有特别限定，可以为空气。加热后进行放冷等即可。
上述化学还原没有特别限定，例如，在包含还原剂的水溶液等中浸渍1分钟～3分钟左右即可。作为还原剂，例如可列举出次磷酸、二甲基胺硼烷、甲醛、硼氢化钠、肼等。这些还原剂可以使用1种或2种以上。在化学还原后，进行水洗、干燥等即可。
通过如上那样的催化剂金属的活化处理，涂布覆膜中的催化剂金属也表现出自催化性。
在该催化剂金属的活化处理之后，进行无电解镀敷。无电解镀敷的种类没有特别限定，例如可列举出无电解镀铜、无电解镀镍、无电解镀铜-镀镍等。此外，无电解镀敷的条件根据所要求的镀敷厚度来适当设定即可，因而没有特别限定，例如可列举出pH9左右、液温40℃左右、处理时间7分钟左右等条件。
通过镀敷在基板上进行电路的形成时，如果包括如上说明的本发明方法(工序)，则能够在基板上形成电路。作为通过镀敷在基板上形成电路的方法，可列举出公知的各种方法。
具体而言，作为利用本发明方法通过镀敷在基板上形成电路的方法，在催化剂金属的活化处理时，仅对基板上的形成电路的部位进行活化处理，其后进行无电解镀敷，进而进行电解镀敷，也能够在基板上形成电路。电解镀敷的种类没有特别限定，例如可列举出电解镀铜等。此外，电解镀敷的条件根据所要求的镀敷厚度来适当设定即可，因而没有特别限定，例如可列举出以3A/dm2左右进行10分钟～60分钟左右等的条件。作为仅对形成电路的部位进行活化处理的方法，例如可列举出如下方法：在基板上利用掩膜等仅对基板上的形成电路的部位施加涂布覆膜的方法；对基板的整面施加涂布覆膜，利用掩膜等仅对基板上的形成电路的部位进行活化处理的方法等。这些方法之中，优选对基板的整面施加涂布覆膜，利用掩膜等仅对基板上的形成电路的部位进行活化处理的方法，特别是优选为通过450nm以下的可见光和紫外线的照射来进行活化处理，仅对基板上的形成电路的部位进行活化处理的方法。
此外，作为利用本发明方法通过镀敷在基板上形成电路的其它方法，在催化剂金属的活化处理时，在基板上、优选对基板的整面进行活化处理，在进行无电解镀敷后，例如通过进行如下的工序(a1)～(e1)、(a2)～(e2)等，能够在基板上形成电路。需要说明的是，工序(a1)～(e1)对应于通常被称为半加成法的电路形成法，工序(a2)～(e2)对应于通常被称为减成法的电路形成法。
(a1)在未形成电路的部位设置干膜的工序
(b1)对形成电路的部位进行电解镀敷的工序
(c1)去除干膜的工序
(d1)将未形成电路的部位的无电解镀层去除的工序
(e1)将未形成电路的部位的涂布覆膜去除的工序
(a2)进行电解镀敷的工序
(b2)在形成电路的部位设置干膜的工序
(c2)将未形成电路的部位的无电解镀层和电解镀层去除的工序
(d2)将未形成电路的部位的涂布覆膜去除的工序
(e2)去除干膜的工序
上述工序之中，(a1)在未形成电路的部位设置干膜的工序没有特别限定，例如，使用通常的感光性抗蚀剂，利用基于UV的曝光显影，对无电解镀敷的未形成电路的部位设置干膜即可。
在工序(a1)之后，(b1)对形成电路的部位进行电解镀敷的工序没有特别限定，例如浸渍于电解镀液，利用通常的条件进行镀敷直至达到期望厚度为止即可。电解镀液的种类没有特别限定，例如可列举出电解镀铜等。通过该工序仅对形成电路的部位进行镀敷。
在工序(b1)之后，(c1)去除干膜的工序没有特别限定，配合着干膜的种类，适当用能够将其溶解的有机溶剂、碱性水溶液等进行处理即可。处理方法没有特别限定，可以为浸渍、喷雾等。
在工序(c1)之后，(d1)将未形成电路的部位的电解镀层去除的工序没有特别限定，用能够溶解电解镀层的酸等进行处理即可。酸的种类没有特别限定，例如，如果电解镀层为铜则可列举出硫酸等。此外，处理方法没有特别限定，可以为浸渍、喷雾等。
在工序(d1)之后，(e1)将未形成电路的部位的涂布覆膜去除的工序没有特别限定，例如，利用掩膜等对未形成电路的部位照射对于切断上述涂布覆膜中的硅原子之间存在的碳-氧键(O-C)和/或碳-碳键(C-C)而言充分的能量，将上述涂布覆膜分解并去除即可。
对于切断上述涂布覆膜中的硅原子之间存在的碳-氧键而言充分的能量为3.7eV以上，对于切断碳-碳键而言充分的能量为3.6eV以上。如果上述涂布覆膜中的硅原子之间存在的碳-氧键和/或碳-碳键被切断，则上述涂布覆膜发生分解。因此，作为对上述涂布覆膜施加的能量，优选为将碳-碳键切断的3.6eV以上且将硅-氧键(Si-O)切断的8.7eV以下，更优选为3.6eV～4.0eV。该能量照射10分钟左右即可。需要说明的是，是否施加了这样的能量可通过例如对设置有上述涂布覆膜的基板照射能量，确认是否未对基板造成影响而仅能够去除涂布覆膜来确认。
将这样的上述涂布覆膜分解的能量可通过例如等离子体、紫外线、激光等来施加，优选通过等离子体来施加。
具体而言，如果是紫外线，则能量的照射可通过紫外线照射器来进行。此外，如果是激光，则能量的照射可通过固体激光、气体激光、半导体激光等激光照射器来进行。
进而，如果是等离子体，则能量的照射可通过所谓的干式蚀刻来进行。干式蚀刻可通过在大气压以下的压力下产生的包含卤素化合物的混合气体的等离子体、例如低真空等离子体、高真空等离子体来进行。作为卤素化合物，可列举出四氟化碳等。此外，作为与卤素化合物混合的气体，可列举出氮气、氧气、稀有气体等。需要说明的是，干式蚀刻可以利用通常的等离子体蚀刻装置。
如上操作，能够去除未形成电路的部位的涂布覆膜，其后，可以进一步用溶解催化剂金属的溶液来去除基板的未形成电路的部位处残留的催化剂金属。
溶解催化剂金属的溶液没有特别限定，例如优选为酸性水溶液。为了使水溶液成为酸性，例如可以使用盐酸、硫酸等无机酸。为了用溶解催化剂金属的溶液来去除基板的未形成电路的部位处残留的催化剂金属，在溶解催化剂金属的溶液中浸渍基板等即可。
通过这些操作，未形成电路的部位的涂布覆膜、催化剂金属被完全去除。通过进行该工序，仅电路残留在基板上。
此外，上述工序之中，(a2)进行电解镀敷的工序没有特别限定，例如浸渍在电解镀液中，利用通常的条件进行镀敷直至达到期望厚度为止即可。电解镀液的种类没有特别限定，例如可列举出电解镀铜等。通过该工序，对基板的整面进行镀敷。
在工序(a2)之后，(b2)对形成电路的部位设置干膜的工序没有特别限定，例如使用通常的感光性抗蚀剂，利用基于UV的曝光显影，对电解镀敷的形成电路的部位设置干膜即可。
在工序(b2)之后，(c2)将未形成电路的部位的无电解镀层和电解镀层去除的工序没有特别限定，利用能够溶解无电解镀层、电解镀层的酸等进行处理即可。酸的种类没有特别限定，例如，如果电解镀层为铜，则可列举出硫酸等。此外，处理方法没有特别限定，可以为浸渍、喷雾等。
在工序(c2)之后，(d2)将未形成电路的部位的涂布覆膜去除的工序可以与工序(e1)同样进行。
在工序(d2)之后，(e2)去除干膜的工序可以与工序(c1)同样进行。通过进行该工序，仅电路残留在基板上。
在上述工序(a1)～(e1)或者(a2)～(e2)的期间或之后，可以进行清洗、干燥等通常进行的处理。
进而，结束上述工序(a1)～(e1)或者(a2)～(e2)后，也可以反复进行本发明方法的一部分或全部。
通过上述工序，能够得到在基板上依次层叠有基板、含有硅低聚物和催化剂金属的涂布覆膜、无电解镀层、电解镀层的电路。
需要说明的是，如果对基材施加含有硅低聚物和催化剂金属的涂布覆膜后，对想要实施镀敷的期望部位照射450nm以下的可见光和紫外线而使涂布覆膜中的催化剂金属表现出自催化性，接着进行无电解镀敷，则能够对基材的期望部位实施镀敷。此外，也可以在无电解镀敷后实施各种电解镀敷等。
作为上述基材，没有特别限定，可以使用与上述基板相同的基材。此外，为了对想要实施镀敷的期望部位照射450nm以下的可见光和紫外线，利用掩膜等或者预先仅对基材的想要实施镀敷的期望部位施加含有硅低聚物和催化剂金属的涂布覆膜即可。
此外，针对基材的不期望镀敷的部位，与上述工序(e1)、(d2)同样操作，可以利用掩膜等照射对于切断上述涂布覆膜中的硅原子之间存在的碳-氧键(O-C)和/或碳-碳键(C-C)而言充分的能量，将上述涂布覆膜分解并去除，进而，也可以用溶解催化剂金属的溶液来去除催化剂金属。
实施例
以下，列举出实施例来详细地说明本发明，但本发明不受这些实施例的任何限定。
制造例1
含钯硅低聚物的制备：
将预先溶解于1.7g盐酸的氯化钯1.7g添加至乙二醇336g后，进行搅拌使其溶解。向其中添加四乙氧基硅烷564g，一边利用覆套式加热器加热至50℃一边搅拌2小时，使其发生缩合反应而得到反应物。需要说明的是，该反应时生成的醇未经分馏。此外，在该反应前，乙二醇与四乙氧基硅烷不混合而分离成两层，但缩合反应2小时后，形成单层。因此可知：该反应的反应率为100％。
在反应后进行冷却而得到反应物。在反应前和反应后，测定1HNMR和29SiNMR。在1HNMR中，反应结束后的光谱在1.1ppm和3.5ppm附近出现源自乙醇的峰。可以认为：该乙醇是因为四乙氧基硅烷的乙氧基与乙二醇发生缩合反应而生成的。
此外，在29SiNMR中，反应前的光谱中仅在-82ppm附近出现源自四乙氧基硅烷的单一峰，但反应结束后的光谱中在-90ppm至-80ppm的范围出现多个峰。由此可以认为：分子中的Si数为2个～4个。
进而，上述得到的硅低聚物即使经过1年也观察不到钯的沉淀。由此可以认为：在硅低聚物的结构中引入了钯(以下，将其称为“含Pd硅低聚物”)。
制造例2
涂布剂的制备(1)：
以丙烯酸类树脂(Nikazol PK8012P：Nippon Carbide Industries Co.，Inc制)达到10质量％、制造例1中得到的含Pd硅低聚物达到12.5质量％(金属浓度为300ppm)的方式进行添加、混合，从而得到涂布剂。
制造例3
涂布剂的制备(2)：
以丙烯酸类树脂(Nikazol PK8012P：Nippon Carbide Industries Co.，Inc制)达到10质量％、制造例1中得到的含Pd硅低聚物达到12.5质量％(金属浓度为300ppm)的方式进行添加、混合，从而得到涂布剂。
实施例1
在基板上进行选择性镀敷(1)：
以60℃对ABF基板(GX-T31：味之素公司制)进行1.5分钟的脱脂(SK-18：JCU公司制)后，使其干燥。接着，将该ABF基板在通过制造例2得到的涂布剂中浸渍10秒钟，在室温下干燥5分钟。其后，以70℃烧成20分钟，放冷而设置涂布覆膜。放冷后，对ABF基板的整面照射5分钟的波长365nm的紫外线，使催化剂金属表现出自催化性。在紫外线照射后，在80℃的无电解镀镍液(Skylight PB-606：JCU公司制)中浸渍2分钟，进行无电解镀镍。在镀敷后，将干膜贴附于基板的右半边(无电解镀层上)后，在25℃的硫酸铜镀液(CUBE LITE EP-30：JCU公司制)中以3A/dm2进行40分钟的镀敷。镀敷后，用氢氧化钠水溶液来去除干膜，进而用硫酸进行蚀刻，将干膜下方的不需要的无电解铜镀层去除，最后使用等离子体处理装置(大海：JCU公司制)去除无电解镀铜下方的涂布覆膜。
通过这些操作，仅未贴附有干膜的部分发生镀层的析出，除此之外的部分仍然是基板(图1)。由此表示能够在基板上选择性地进行镀敷，进而表示通过该方法能够形成电路。
实施例2
在基板上进行选择性镀敷(2)：
以60℃对ABF基板(GX-T31：味之素公司制)进行1.5分钟的脱脂(SK-18：JCU公司制)后，使其干燥。接着，将该ABF基板在通过制造例3得到的涂布剂中浸渍10秒钟，在室温下干燥5分钟。其后，以70℃烧成20分钟，放冷而设置涂布覆膜。放冷后，对ABF基板的整面照射5分钟的波长365nm的紫外线，使催化剂金属表现出自催化性。在紫外线照射后，在80℃的无电解镀镍液(Skylight PB-606：JCU公司制)中浸渍2分钟，进行无电解镀镍。其后，在25℃的硫酸铜镀液(CUBE LITE EP-30：JCU公司制)中以3A/dm2进行40分钟的镀敷。镀敷后，将干膜贴附于基板的右半边(硫酸铜镀层上)后，利用硫酸进行蚀刻，将不需要的硫酸铜镀层和无电解镍镀层去除，使用等离子体处理装置(大海：JCU公司制)将无电解镍镀层的下方的涂布覆膜去除，最后用氢氧化钠水溶液去除干膜。
通过这些操作，仅在贴附有干膜的部分残留镀层，除此之外的部分仍然是基板(图2)。由此表示能够在基板上选择性地进行镀敷，进而表示通过该方法能够形成电路。
实施例3
在基板上进行选择性镀敷(3)：
以60℃对玻璃基板进行1.5分钟的脱脂(SK-18：JCU公司制)后，使其干燥。接着，将该玻璃基板在通过制造例3得到的涂布剂中浸渍10秒钟，在室温下干燥5分钟。其后，以180℃进行20分钟的烧成，放冷而设置涂布覆膜。需要说明的是，通过该烧成，使催化剂金属表现出自催化性。其后，在40℃的无电解铜镍镀液(AISL-570：JCU公司制)中浸渍5分钟，进行无电解镀铜镀镍。其后，以180℃烧成20分钟，进而在20℃的硫酸铜镀液(CUBE LITE EP-30：JCU公司制)中以3A/dm2进行40分钟的镀敷。镀敷后，将干膜贴附于基板的右半边(硫酸铜镀层上)后，用硫酸进行蚀刻，去除硫酸铜镀层和无电解铜镍镀层，使用等离子体处理装置(大海：JCU公司制)来去除涂布覆膜，最后用氢氧化钠水溶液来去除干膜。
通过这些操作，仅在贴附有干膜的部分析出镀层，除此之外的部分仍然是基板(图3)。由此表示能够在基板上选择性地进行镀敷，进而表示通过该方法能够形成电路。
实施例4
在基板上进行选择性镀敷(4)：
以60℃对ABF基板(GX-T31：味之素公司制)进行1.5分钟的脱脂(SK-18：JCU公司制)后，使其干燥。接着，将该ABF基板在通过制造例3得到的涂布剂中浸渍10秒钟，在室温下干燥5分钟。其后，以70℃烧成20分钟，放冷而设置涂布覆膜。放冷后，在ABF基板上重叠描绘有电路图案的玻璃的光掩膜，照射5分钟的波长365nm的紫外线。在紫外线照射后，取下掩膜，在80℃的无电解镍镀液(Skylight PB-606：JCU公司制)中浸渍2分钟，进行无电解镀镍，由此仅在曝光部确认到无电解镍的析出(图4)。
产业上的可利用性
本发明方法可用于集成电路等的电路形成。以上

Claims (18)

1.一种在基板上形成电路的方法，其特征在于，包括如下工序：
通过镀敷在基板上进行电路的形成时，在基板上施加含有硅低聚物和催化剂金属的涂布覆膜后，进行涂布覆膜中的催化剂金属的活化处理而使该催化剂金属表现出自催化性，接下来进行无电解镀敷。
2.根据权利要求1所述的在基板上形成电路的方法，其中，在进行无电解镀敷后，进行以下的工序(a1)～(e1)：
(a1)在未形成电路的部位设置干膜的工序、
(b1)对形成电路的部位进行电解镀敷的工序、
(c1)去除干膜的工序、
(d1)将未形成电路的部位的无电解镀层去除的工序、
(e1)将未形成电路的部位的涂布覆膜去除的工序。
3.根据权利要求1所述的在基板上形成电路的方法，其中，在进行无电解镀敷后，进行以下的工序(a2)～(e2)：
(a2)进行电解镀敷的工序、
(b2)在形成电路的部位设置干膜的工序、
(c2)将未形成电路的部位的无电解镀层和电解镀层去除的工序、
(d2)将未形成电路的部位的涂布覆膜去除的工序、
(e2)去除干膜的工序。
4.根据权利要求1所述的在基板上形成电路的方法，其中，仅在形成电路的部位进行涂布覆膜中的催化剂金属的活化处理。
5.根据权利要求1～4中任一项所述的在基板上形成电路的方法，其中，含有硅低聚物和催化剂金属的涂布覆膜由含催化剂金属硅低聚物形成，所述含催化剂金属硅低聚物是通过使四烷氧基硅烷与至少在n、n+1位或n、n+2位键合有羟基的多元醇在催化剂金属的存在下发生缩合反应而得到，其中，n为1以上的整数。
6.根据权利要求5所述的在基板上形成电路的方法，其中，不对缩合反应时生成的醇进行分馏。
7.根据权利要求5所述的在基板上形成电路的方法，其中，四烷氧基硅烷为选自四甲氧基硅烷、四乙氧基硅烷和四丁氧基硅烷中的1种或2种以上。
8.根据权利要求5所述的在基板上形成电路的方法，其中，至少在n、n+1位或n、n+2位键合有羟基的多元醇为乙二醇和/或1，3-丙二醇，其中，n为1以上的整数。
9.根据权利要求5所述的在基板上形成电路的方法，其中，催化剂金属为选自铁、镍、钴、铜和钯中的1种或2种以上。
10.根据权利要求1～9中任一项所述的在基板上形成电路的方法，其中，催化剂金属的活化处理是450nm以下的可见光和紫外线的照射。
11.根据权利要求1～10中任一项所述的在基板上形成电路的方法，其中，基板为树脂或玻璃。
12.根据权利要求11所述的在基板上形成电路的方法，其中，基板是通过向树脂中添加选自无机氧化物、无机氮化物和无机硫化物中的1种或2种以上填料而得到。
13.根据权利要求11或12所述的在基板上形成电路的方法，其中，树脂为选自ABS、聚丙烯、聚乙烯、聚碳酸酯、环氧系树脂、酚系树脂和氨基甲酸酯系树脂中的1种或2种以上。
14.一种电路，其特征在于，通过权利要求1～13中任一项所述的在基板上形成电路的方法而得到并依次层叠有基板、含有硅低聚物和催化剂金属的涂布覆膜、无电解镀层、电解镀层。
15.一种对基材进行镀敷的方法，其特征在于，对基材施加含有硅低聚物和催化剂金属的涂布覆膜后，对想要实施镀敷的期望部位照射450nm以下的可见光和紫外线而使涂布覆膜中的催化剂金属表现出自催化性，接下来进行无电解镀敷。
16.根据权利要求15所述的对基材进行镀敷的方法，其中，基材为树脂或玻璃。
17.根据权利要求16所述的对基材进行镀敷的方法，其中，基材是通过向树脂中添加选自无机氧化物、无机氮化物和无机硫化物中的1种或2种以上填料而得到。
18.根据权利要求16或17所述的对基材进行镀敷的方法，其中，树脂为选自ABS、聚丙烯、聚乙烯、聚碳酸酯、环氧系树脂、酚系树脂和氨基甲酸酯系树脂中的1种或2种以上。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0280918A2 (en) * 1987-02-19 1988-09-07 International Business Machines Corporation Process for metal plating of substrates
US6344242B1 (en) * 1999-09-10 2002-02-05 Mcdonnell Douglas Corporation Sol-gel catalyst for electroless plating
JP2004107737A (ja) * 2002-09-19 2004-04-08 Mitsubishi Materials Corp 回路基板とその配線形成方法
JP2006089777A (ja) * 2004-09-21 2006-04-06 Jsr Corp 感光性樹脂組成物、金属パターン及びその形成方法
CN101981663A (zh) * 2008-03-28 2011-02-23 意法半导体(图尔)公司 用于在底材上形成沉积金属的底层的方法
CN105051254A (zh) * 2013-03-25 2015-11-11 安美特德国有限公司 供无电电镀的铜表面活化的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04364091A (ja) * 1991-06-11 1992-12-16 Denki Kagaku Kogyo Kk 回路基板
DE19915377A1 (de) * 1999-04-06 2000-10-12 Inst Neue Mat Gemein Gmbh Katalytische Zusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
DE19946712A1 (de) * 1999-09-29 2001-04-05 Inst Neue Mat Gemein Gmbh Verfahren und Zusammensetzungen zum Bedrucken von Substraten
US7629396B2 (en) * 2005-02-23 2009-12-08 E.I. Du Pont De Nemours And Company Silicon-containing polytrimethylene homo- for copolyether composition
JP4437456B2 (ja) * 2005-04-20 2010-03-24 東京応化工業株式会社 塗膜形成方法
JP5238148B2 (ja) 2005-08-12 2013-07-17 株式会社 資生堂 水溶性シラン誘導体の製造方法
US20090149554A1 (en) 2005-08-12 2009-06-11 Shiseido Co., Ltd. Water-soluble metal alcoholate derivatives, production methods thereof, and solid gelatinous external preparations containing the same
TW200746940A (en) * 2005-10-14 2007-12-16 Ibiden Co Ltd Printed wiring board
JP5870550B2 (ja) * 2010-08-25 2016-03-01 宇部興産株式会社 フレキシブルプリント基板の製法
US9554463B2 (en) * 2014-03-07 2017-01-24 Rogers Corporation Circuit materials, circuit laminates, and articles formed therefrom
TWI584708B (zh) * 2014-11-28 2017-05-21 財團法人工業技術研究院 導線結構及其製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0280918A2 (en) * 1987-02-19 1988-09-07 International Business Machines Corporation Process for metal plating of substrates
US6344242B1 (en) * 1999-09-10 2002-02-05 Mcdonnell Douglas Corporation Sol-gel catalyst for electroless plating
JP2004107737A (ja) * 2002-09-19 2004-04-08 Mitsubishi Materials Corp 回路基板とその配線形成方法
JP2006089777A (ja) * 2004-09-21 2006-04-06 Jsr Corp 感光性樹脂組成物、金属パターン及びその形成方法
CN101981663A (zh) * 2008-03-28 2011-02-23 意法半导体(图尔)公司 用于在底材上形成沉积金属的底层的方法
CN105051254A (zh) * 2013-03-25 2015-11-11 安美特德国有限公司 供无电电镀的铜表面活化的方法

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