CN108461392B - 处理方案的评价方法、评价用辅助装置和液体处理装置 - Google Patents

处理方案的评价方法、评价用辅助装置和液体处理装置 Download PDF

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CN108461392B
CN108461392B CN201810153767.6A CN201810153767A CN108461392B CN 108461392 B CN108461392 B CN 108461392B CN 201810153767 A CN201810153767 A CN 201810153767A CN 108461392 B CN108461392 B CN 108461392B
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liquid
risk
processing
substrate
data
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CN108461392A (zh
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鹤田丰久
桾本裕一朗
羽山隆史
滨田佳志
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G03F7/3028—Imagewise removal using liquid means from a wafer supported on a rotating chuck characterised by means for on-wafer monitoring of the processing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F16/00—Information retrieval; Database structures therefor; File system structures therefor
    • G06F16/90—Details of database functions independent of the retrieved data types
    • G06F16/903—Querying
    • G06F16/90335—Query processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Coating Apparatus (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN201810153767.6A 2017-02-22 2018-02-22 处理方案的评价方法、评价用辅助装置和液体处理装置 Active CN108461392B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-031172 2017-02-22
JP2017031172A JP6769335B2 (ja) 2017-02-22 2017-02-22 処理レシピの評価方法、記憶媒体、処理レシピ評価用の支援装置、及び液処理装置

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CN108461392B true CN108461392B (zh) 2023-02-17

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US (1) US10248030B2 (https=)
JP (1) JP6769335B2 (https=)
KR (1) KR102404981B1 (https=)
CN (1) CN108461392B (https=)
TW (1) TWI744481B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102826807B1 (ko) * 2018-11-21 2025-07-01 도쿄엘렉트론가부시키가이샤 기판 처리의 조건 설정 지원 방법, 기판 처리 시스템, 기억 매체 및 학습 모델
JP7450358B2 (ja) * 2019-09-25 2024-03-15 東京エレクトロン株式会社 基板処理制御方法、基板処理装置、及び記憶媒体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232866A (ja) * 1987-03-20 1988-09-28 Tokyo Electron Ltd スプレイノズル
JPH08330211A (ja) * 1995-05-31 1996-12-13 Hitachi Ltd フォトレジスト現像装置、およびそれを用いた半導体集積回路装置の製造装置、ならびに現像処理方法
JP2005072333A (ja) * 2003-08-26 2005-03-17 Tokyo Electron Ltd 基板の液処理方法及び基板の液処理装置
CN101799638A (zh) * 2009-02-06 2010-08-11 东京毅力科创株式会社 显影装置、显影处理方法和存储介质
CN104345580A (zh) * 2013-08-05 2015-02-11 东京毅力科创株式会社 显影方法和显影装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095960A (ja) * 2005-09-28 2007-04-12 Sharp Corp 基板洗浄方法、半導体装置の製造方法、表示装置、基板洗浄装置および基板現像処理装置
JP2007311439A (ja) * 2006-05-17 2007-11-29 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5243205B2 (ja) * 2008-11-25 2013-07-24 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5262829B2 (ja) * 2009-02-25 2013-08-14 東京エレクトロン株式会社 現像装置及び現像方法
JP5212293B2 (ja) 2009-07-17 2013-06-19 東京エレクトロン株式会社 現像装置、レジストパターンの形成方法及び記憶媒体
KR101806191B1 (ko) * 2010-06-17 2017-12-07 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 이 기판 처리 방법을 실행하기 위한 컴퓨터 프로그램이 기록된 기록 매체 및 기판 처리 장치
JP2013219302A (ja) * 2012-04-12 2013-10-24 Ps4 Luxco S A R L 半導体装置の製造方法及びリンス装置
JP6332095B2 (ja) * 2015-03-20 2018-05-30 東京エレクトロン株式会社 薬液供給装置の調整方法、記憶媒体及び薬液供給装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232866A (ja) * 1987-03-20 1988-09-28 Tokyo Electron Ltd スプレイノズル
JPH08330211A (ja) * 1995-05-31 1996-12-13 Hitachi Ltd フォトレジスト現像装置、およびそれを用いた半導体集積回路装置の製造装置、ならびに現像処理方法
JP2005072333A (ja) * 2003-08-26 2005-03-17 Tokyo Electron Ltd 基板の液処理方法及び基板の液処理装置
CN101799638A (zh) * 2009-02-06 2010-08-11 东京毅力科创株式会社 显影装置、显影处理方法和存储介质
CN104345580A (zh) * 2013-08-05 2015-02-11 东京毅力科创株式会社 显影方法和显影装置

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Publication number Publication date
TW201903839A (zh) 2019-01-16
CN108461392A (zh) 2018-08-28
JP6769335B2 (ja) 2020-10-14
US10248030B2 (en) 2019-04-02
JP2018137350A (ja) 2018-08-30
US20180239257A1 (en) 2018-08-23
KR20180097135A (ko) 2018-08-30
TWI744481B (zh) 2021-11-01
KR102404981B1 (ko) 2022-06-07

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