JP2019212804A - 塗布膜形成装置及び塗布膜形成装置の調整方法 - Google Patents
塗布膜形成装置及び塗布膜形成装置の調整方法 Download PDFInfo
- Publication number
- JP2019212804A JP2019212804A JP2018108883A JP2018108883A JP2019212804A JP 2019212804 A JP2019212804 A JP 2019212804A JP 2018108883 A JP2018108883 A JP 2018108883A JP 2018108883 A JP2018108883 A JP 2018108883A JP 2019212804 A JP2019212804 A JP 2019212804A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- coating
- coating film
- wafer
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Abstract
Description
前記基板の周縁部の前記塗布膜による被覆状態を制御するための処理パラメータに基づいて、当該基板の周縁部に沿って前記塗布液を供給して環状の前記塗布膜を形成する周縁塗布モジュールと、
前記環状の塗布膜が形成された基板を撮像する撮像モジュールと、
前記搬入出部、前記塗布モジュール及び前記撮像モジュールの間で前記基板を搬送する搬送機構と、
装置の動作を調整するために前記塗布膜を形成する複数の調整用の前記基板に対して各々値が異なる前記処理パラメータに基づいて前記環状の塗布膜を形成した後に前記撮像モジュールによる撮像を行う第1のステップが行われるように制御信号を出力し、且つ前記各基板の撮像結果に基づいて、前記装置の動作の調整後に前記塗布モジュールで前記基板に前記環状の塗布膜を形成するための前記処理パラメータの値を決定する制御部と、
を備える。
ただし、吐出時回転数が高過ぎると、遠心力によってウエハWから飛散するレジストの量が多くなるため、レジスト吐出量が少な過ぎる場合にはウエハWの周縁部が十分にレジストによって被覆されなくなってしまう。そのため粘度が比較的低い場合には、吐出時回転数が比較的高く且つレジスト吐出量が比較的少ない組み合わせのみが、ステップS1で使用される候補値の組み合わせから除外されるようにしている。具体的に図13の例では、吐出量が0.3gで吐出時回転数が300rpm、400rpm及び500rpm、吐出量が0.5gで吐出時回転数が400rpm及び500rpm、吐出量が0.7gで吐出時回転数が500rpmの組み合わせのみが除外される。
B1 キャリアブロック
2 周縁塗布モジュール
3 撮像モジュール
11 搬送機構
100 制御部
Claims (11)
- 塗布液が供給されることによって塗布膜が形成される円形の基板が搬入出される搬入出部と、
前記基板の周縁部の前記塗布膜による被覆状態を制御するための処理パラメータに基づいて、当該基板の周縁部に沿って前記塗布液を供給して環状の前記塗布膜を形成する周縁塗布モジュールと、
前記環状の塗布膜が形成された基板を撮像する撮像モジュールと、
前記搬入出部、前記塗布モジュール及び前記撮像モジュールの間で前記基板を搬送する搬送機構と、
装置の動作を調整するために前記塗布膜を形成する複数の調整用の前記基板に対して各々値が異なる前記処理パラメータに基づいて前記環状の塗布膜を形成した後に前記撮像モジュールによる撮像を行う第1のステップが行われるように制御信号を出力し、且つ前記各基板の撮像結果に基づいて、前記装置の動作の調整後に前記塗布モジュールで前記基板に前記環状の塗布膜を形成するための前記処理パラメータの値を決定する制御部と、
を備えた塗布膜形成装置。 - 前記周縁塗布モジュールは、
前記基板を保持して回転する基板保持部と、
回転する前記基板の周縁部に前記塗布液を吐出する塗布液供給ノズルと、を備え、
前記処理パラメータは、
前記塗布液を供給するときの前記基板の回転数または前記塗布液供給ノズルから吐出する前記塗布液の量を含む請求項1記載の塗布膜形成装置。 - 前記制御部は、
前記撮像結果において前記塗布膜による基板の被覆状態が正常である基板の処理に用いた処理パラメータの値のうち、前記塗布膜による基板の被覆状態が異常である基板の処理に用いた処理パラメータの値に最も近いものを除外して当該処理パラメータの値を決定する請求項1または2記載の塗布膜形成装置。 - 前記第1のステップを行う前に前記塗布液の粘度を設定する設定部が設けられ、
前記第1のステップでは、設定された粘度に応じた値の前記処理パラメータが用いられる請求項1ないし3のいずれか一つに記載の塗布膜形成装置。 - 前記制御部は、
前記周縁塗布モジュールに対して前記基板の受け渡しを行うために予め設定された前記搬送機構の位置データに基づいて、当該周縁塗布モジュールへの当該基板の受け渡しが行われるように制御信号を出力し、且つ
前記第1のステップにより決定された処理パラメータを用いて前記塗布膜が形成された調整用の前記基板についての前記撮像モジュールによる撮像結果に基づき、前記搬送機構の位置データの再設定を行う第2のステップを実行する請求項1ないし4のいずれか一つに記載の塗布膜形成装置。 - 前記周縁塗布モジュールは、
前記基板保持部と、前記塗布液供給ノズルと、回転する前記基板における中心寄りの供給位置と周縁寄りの供給位置との間で塗布液の供給位置が変更されるように前記塗布液供給ノズルを移動させる移動機構と、を備え、
前記制御部は、
予め設定された塗布液の供給位置に関するデータに基づいて前記塗布液が供給されるように制御信号を出力し、且つ
前記第2のステップの実行後に前記環状の塗布膜が形成された調整用の前記基板についての前記撮像モジュールによる撮像結果に基づき、前記塗布液の供給位置に関するデータの再設定を行う第3のステップを実行する請求項5記載の塗布膜形成装置。 - 前記基板は周縁部にベベル部を備える半導体ウエハであり、
前記周縁塗布モジュールは、前記塗布膜形成後の回転する前記基板の前記ベベル部に前記塗布膜を除去する除去液を吐出して、前記環状の塗布膜の外縁部を除去する塗布膜除去用ノズルを備え、
前記撮像モジュールでは前記塗布膜の外縁部が除去された基板が撮像され、
前記制御部は、
予め記憶された前記除去液が吐出されるときの基板の回転数に基づいて当該基板が回転するように制御信号を出力し、且つ
前記第3のステップの実行後に、前記環状の塗布膜が形成された調整用の前記基板の前記撮像モジュールによる撮像結果に基づいて、前記ベベル部の内縁に対する塗布膜の外縁の高さ寸法を求め、求めた高さ寸法が許容値か否かを判定して許容値でなければ、求めた高さ寸法と、予め作成した前記高さ寸法及び基板の回転数の関係を示す参考データと、に基づいて前記除去液が供給されるときの基板の回転数を再設定する第4のステップを実行する請求項6記載の塗布膜形成装置。 - 調整用の前記基板に対して塗布液の塗布及びベベル部の塗布膜の除去から、前記高さ寸法が許容値か否かを判定する動作を一連の動作とすると、前記第3のステップの実行後に行われる第1回目の一連の動作、第2回目の一連の動作が終了して更に第3回目の一連の動作を行うときには、前記基板の回転数の再設定は、前記参考データを用いる代わりに、実データを用い、
前記実データは、第1回目の一連の動作時における基板の回転数及び前記高さ寸法と、第2回目の一連の動作時における基板の回転数及び前記高さ寸法と、から求めた、前記高さ寸法及び基板の回転数の関係を示すデータである請求項7記載の塗布膜形成装置。 - 前記周縁塗布モジュールは、前記塗布膜形成後の回転する基板の周端部に前記除去液を吐出して洗浄する洗浄ノズルを備え、
前記制御部は、
前記第3のステップの実行後に、前記環状の塗布膜が形成された調整用の前記基板の前記撮像モジュールによる撮像結果に基づいて、前記高さ寸法の判定動作に加えて、基板の周端部の塗布液による汚れ度合を求め、求めた汚れ度合が許容値か否かを判定して許容値でなければ、求めた汚れ度合と、予め作成した前記汚れ度合及び基板の周端部の洗浄時間の関係を示す参考データと、に基づいて前記基板の周端部の洗浄時間を再設定する請求項7または8記載の塗布膜形成装置。 - 調整用の基板に対しての塗布液の塗布から、前記汚れ度合が許容値か否かを判定する動作を一連の動作と呼ぶとすると、前記第3のステップの実行後に行われる第1回目の一連の動作、第2回目の一連の動作が終了して更に第3回目の一連の動作を行うときには、前記洗浄時間の再設定は、前記参考データを用いる代わりに、実データを用い、
前記実データは、第1回目の一連の動作時における前記洗浄時間及び前記汚れ度合と、第2回目の一連の動作時における前記洗浄時間及び前記汚れ度合と、から求めた、前記洗浄時間及び前記汚れ度合の関係を示すデータである請求項9記載の塗布膜形成装置。 - 円形の基板を搬入出部に搬入出する工程と、
周縁塗布モジュールにおいて、前記基板の周縁部の前記塗布膜による被覆状態を制御するための処理パラメータに基づいて、当該基板の周縁部に沿って塗布液を供給して環状の塗布膜を形成する工程と、
撮像モジュールによって前記環状の塗布膜が形成された基板を撮像する工程と、
搬送機構によって前記搬入出部、前記塗布モジュール及び前記撮像モジュールの間で前記基板を搬送する工程と、
装置の動作を調整するために前記塗布膜を形成する複数の調整用の前記基板に対して各々値が異なる前記処理パラメータに基づいて前記環状の塗布膜を形成した後に前記撮像モジュールによる撮像を行う工程と、
前記各基板の撮像結果に基づいて装置の動作の調整後に前記塗布モジュールで前記基板に前記環状の塗布膜を形成するための前記処理パラメータの値を決定する工程と、
を備えた塗布膜形成装置の調整方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018108883A JP7052573B2 (ja) | 2018-06-06 | 2018-06-06 | 塗布膜形成装置及び塗布膜形成装置の調整方法 |
KR1020190063176A KR20190138741A (ko) | 2018-06-06 | 2019-05-29 | 도포막 형성 장치 및 도포막 형성 장치의 조정 방법 |
TW108119273A TWI804630B (zh) | 2018-06-06 | 2019-06-04 | 塗布膜形成裝置及塗布膜形成裝置之調整方法 |
US16/430,658 US11676844B2 (en) | 2018-06-06 | 2019-06-04 | Coating film forming apparatus and adjustment method therefor |
CN201910490174.3A CN110568725B (zh) | 2018-06-06 | 2019-06-06 | 涂敷膜形成装置和涂敷膜形成装置的调整方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018108883A JP7052573B2 (ja) | 2018-06-06 | 2018-06-06 | 塗布膜形成装置及び塗布膜形成装置の調整方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019212804A true JP2019212804A (ja) | 2019-12-12 |
JP7052573B2 JP7052573B2 (ja) | 2022-04-12 |
Family
ID=68764199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018108883A Active JP7052573B2 (ja) | 2018-06-06 | 2018-06-06 | 塗布膜形成装置及び塗布膜形成装置の調整方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11676844B2 (ja) |
JP (1) | JP7052573B2 (ja) |
KR (1) | KR20190138741A (ja) |
CN (1) | CN110568725B (ja) |
TW (1) | TWI804630B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022054528A1 (ja) * | 2020-09-08 | 2022-03-17 | 東京エレクトロン株式会社 | 周縁処理装置、周縁処理方法及びコンピュータ読み取り可能な記録媒体 |
TWI785626B (zh) * | 2020-05-29 | 2022-12-01 | 日商斯庫林集團股份有限公司 | 周緣部塗布裝置及周緣部塗布方法 |
WO2023204017A1 (ja) * | 2022-04-18 | 2023-10-26 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111630637A (zh) * | 2018-01-26 | 2020-09-04 | 东京毅力科创株式会社 | 基板处理装置 |
US10976676B2 (en) * | 2018-09-27 | 2021-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contamination handling for semiconductor apparatus |
KR102211781B1 (ko) * | 2018-11-23 | 2021-02-05 | 세메스 주식회사 | 기판 처리 장치, 편심 검사 장치 및 방법 |
CN113644017A (zh) * | 2020-04-27 | 2021-11-12 | 上海新昇半导体科技有限公司 | 一种对晶圆进行定位的方法和半导体制造设备 |
CN113065375B (zh) * | 2021-04-08 | 2022-06-14 | 温州大学 | 一种封杯膜定位标签识别方法及系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0729809A (ja) * | 1993-07-15 | 1995-01-31 | Hitachi Ltd | ホトレジスト塗布装置 |
JP2002093697A (ja) * | 2000-07-11 | 2002-03-29 | Tokyo Electron Ltd | 露光条件出し装置と露光条件出し方法および処理装置 |
JP2014110386A (ja) * | 2012-12-04 | 2014-06-12 | Tokyo Electron Ltd | 周縁部塗布装置、周縁部塗布方法及び周縁部塗布用記録媒体 |
JP2015099809A (ja) * | 2013-11-18 | 2015-05-28 | 東京エレクトロン株式会社 | 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置 |
JP2017098333A (ja) * | 2015-11-19 | 2017-06-01 | 東京エレクトロン株式会社 | 基板処理方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958827A (ja) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | 半導体ウエ−ハ、半導体ウエ−ハの製造方法及び半導体ウエ−ハの製造装置 |
TWI230390B (en) * | 2000-07-11 | 2005-04-01 | Tokyo Electron Ltd | Apparatus for determining exposure conditions, method for determining exposure conditions and process apparatus |
JP4071476B2 (ja) * | 2001-03-21 | 2008-04-02 | 株式会社東芝 | 半導体ウェーハ及び半導体ウェーハの製造方法 |
JP3967631B2 (ja) | 2001-06-07 | 2007-08-29 | 東京エレクトロン株式会社 | 膜形成方法及び膜形成装置 |
US20080011421A1 (en) * | 2002-04-26 | 2008-01-17 | Accretech Usa, Inc. | Processing chamber having labyrinth seal |
JP4169719B2 (ja) * | 2004-03-30 | 2008-10-22 | Hoya株式会社 | レジスト膜付基板の製造方法 |
JP4304165B2 (ja) * | 2005-04-08 | 2009-07-29 | 株式会社 インテグレイテッド ソリューションズ | 露光方法および露光装置 |
JP2006339364A (ja) * | 2005-06-01 | 2006-12-14 | Toshiba Corp | 洗浄方法及び洗浄装置 |
JP4757126B2 (ja) * | 2005-10-11 | 2011-08-24 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2007220890A (ja) * | 2006-02-16 | 2007-08-30 | Toshiba Corp | 塗布現像処理装置における基板周縁処理方法 |
US20090122304A1 (en) * | 2006-05-02 | 2009-05-14 | Accretech Usa, Inc. | Apparatus and Method for Wafer Edge Exclusion Measurement |
US7616804B2 (en) * | 2006-07-11 | 2009-11-10 | Rudolph Technologies, Inc. | Wafer edge inspection and metrology |
US20100154826A1 (en) * | 2008-12-19 | 2010-06-24 | Tokyo Electron Limited | System and Method For Rinse Optimization |
JP5835188B2 (ja) * | 2012-11-06 | 2015-12-24 | 東京エレクトロン株式会社 | 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体 |
CN104425308B (zh) * | 2013-09-09 | 2018-03-09 | 东京毅力科创株式会社 | 测定装置、基板处理系统和测定方法 |
JP6332095B2 (ja) * | 2015-03-20 | 2018-05-30 | 東京エレクトロン株式会社 | 薬液供給装置の調整方法、記憶媒体及び薬液供給装置 |
JP6444909B2 (ja) * | 2016-02-22 | 2018-12-26 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体 |
-
2018
- 2018-06-06 JP JP2018108883A patent/JP7052573B2/ja active Active
-
2019
- 2019-05-29 KR KR1020190063176A patent/KR20190138741A/ko not_active Application Discontinuation
- 2019-06-04 TW TW108119273A patent/TWI804630B/zh active
- 2019-06-04 US US16/430,658 patent/US11676844B2/en active Active
- 2019-06-06 CN CN201910490174.3A patent/CN110568725B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0729809A (ja) * | 1993-07-15 | 1995-01-31 | Hitachi Ltd | ホトレジスト塗布装置 |
JP2002093697A (ja) * | 2000-07-11 | 2002-03-29 | Tokyo Electron Ltd | 露光条件出し装置と露光条件出し方法および処理装置 |
JP2014110386A (ja) * | 2012-12-04 | 2014-06-12 | Tokyo Electron Ltd | 周縁部塗布装置、周縁部塗布方法及び周縁部塗布用記録媒体 |
JP2015099809A (ja) * | 2013-11-18 | 2015-05-28 | 東京エレクトロン株式会社 | 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置 |
JP2017098333A (ja) * | 2015-11-19 | 2017-06-01 | 東京エレクトロン株式会社 | 基板処理方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI785626B (zh) * | 2020-05-29 | 2022-12-01 | 日商斯庫林集團股份有限公司 | 周緣部塗布裝置及周緣部塗布方法 |
WO2022054528A1 (ja) * | 2020-09-08 | 2022-03-17 | 東京エレクトロン株式会社 | 周縁処理装置、周縁処理方法及びコンピュータ読み取り可能な記録媒体 |
JP7407960B2 (ja) | 2020-09-08 | 2024-01-04 | 東京エレクトロン株式会社 | 周縁処理装置、周縁処理方法及びコンピュータ読み取り可能な記録媒体 |
WO2023204017A1 (ja) * | 2022-04-18 | 2023-10-26 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7052573B2 (ja) | 2022-04-12 |
TWI804630B (zh) | 2023-06-11 |
KR20190138741A (ko) | 2019-12-16 |
CN110568725B (zh) | 2024-03-08 |
TW202013443A (zh) | 2020-04-01 |
CN110568725A (zh) | 2019-12-13 |
US20190378739A1 (en) | 2019-12-12 |
US11676844B2 (en) | 2023-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7052573B2 (ja) | 塗布膜形成装置及び塗布膜形成装置の調整方法 | |
US11513081B2 (en) | Substrate inspection method, substrate treatment system, and computer storage medium | |
JP6444909B2 (ja) | 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体 | |
JP5835188B2 (ja) | 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体 | |
JP6880364B2 (ja) | 基板処理装置および基板処理方法 | |
JP7452611B2 (ja) | 基板処理装置及び塗布モジュールのパラメータの調整方法並びに記憶媒体 | |
JP7202828B2 (ja) | 基板検査方法、基板検査装置および記録媒体 | |
JP2019021747A (ja) | 基板位置調整方法、記憶媒体及び基板処理システム | |
JP6423064B2 (ja) | 基板処理システム | |
JP6828329B2 (ja) | 基板処理装置、基板処理方法及び記憶媒体 | |
KR102339249B1 (ko) | 액 처리 방법, 액 처리 장치 및 기억 매체 | |
JP6524185B2 (ja) | 基板処理システム | |
JP7028285B2 (ja) | 基板処理装置、基板処理方法及び記憶媒体 | |
JP6608507B2 (ja) | 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体 | |
JP6788089B2 (ja) | 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体 | |
JP2017092306A (ja) | 基板処理装置および基板処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210316 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211019 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220112 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220301 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220314 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7052573 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |