CN108369428B - 跨电阻器施加受控电压的温度补偿参考电压生成器 - Google Patents

跨电阻器施加受控电压的温度补偿参考电压生成器 Download PDF

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CN108369428B
CN108369428B CN201680072887.2A CN201680072887A CN108369428B CN 108369428 B CN108369428 B CN 108369428B CN 201680072887 A CN201680072887 A CN 201680072887A CN 108369428 B CN108369428 B CN 108369428B
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voltage
resistors
ctat
current
generating
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CN108369428A (zh
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T·M·拉斯姆斯
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
CN201680072887.2A 2015-12-15 2016-11-21 跨电阻器施加受控电压的温度补偿参考电压生成器 Active CN108369428B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/970,265 US9898029B2 (en) 2015-12-15 2015-12-15 Temperature-compensated reference voltage generator that impresses controlled voltages across resistors
US14/970,265 2015-12-15
PCT/US2016/063139 WO2017105796A1 (en) 2015-12-15 2016-11-21 Temperature-compensated reference voltage generator that impresses controlled voltages across resistors

Publications (2)

Publication Number Publication Date
CN108369428A CN108369428A (zh) 2018-08-03
CN108369428B true CN108369428B (zh) 2020-01-14

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Country Link
US (1) US9898029B2 (enExample)
EP (1) EP3391171B1 (enExample)
JP (1) JP6800979B2 (enExample)
KR (1) KR102579232B1 (enExample)
CN (1) CN108369428B (enExample)
BR (1) BR112018011919A2 (enExample)
CA (1) CA3003912A1 (enExample)
TW (1) TWI643049B (enExample)
WO (1) WO2017105796A1 (enExample)

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US10222817B1 (en) * 2017-09-29 2019-03-05 Cavium, Llc Method and circuit for low voltage current-mode bandgap
TWI651609B (zh) * 2017-02-09 2019-02-21 新唐科技股份有限公司 低電壓鎖定電路及其整合參考電壓產生電路之裝置
CN109617410B (zh) * 2018-12-28 2024-01-19 中国电子科技集团公司第五十八研究所 一种新型浮动电压检测电路
CN112034920B (zh) * 2019-06-04 2022-06-17 极创电子股份有限公司 电压产生器
US11127437B2 (en) * 2019-10-01 2021-09-21 Macronix International Co., Ltd. Managing startups of bandgap reference circuits in memory systems
EP3812873B1 (en) * 2019-10-24 2025-02-26 NXP USA, Inc. Voltage reference generation with compensation for temperature variation
US11233513B2 (en) * 2019-11-05 2022-01-25 Mediatek Inc. Reference voltage buffer with settling enhancement
TWI792977B (zh) * 2022-04-11 2023-02-11 立錡科技股份有限公司 具有高次溫度補償功能的參考訊號產生電路
US11815927B1 (en) * 2022-05-19 2023-11-14 Changxin Memory Technologies, Inc. Bandgap reference circuit and chip
US20240393819A1 (en) * 2023-05-25 2024-11-28 Silicon Laboratories Inc. Voltage and current reference circuits
US12267071B2 (en) * 2023-06-01 2025-04-01 Allegro Microsystems, Llc Desaturation circuit having temperature compensation

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JPS6017316A (ja) * 1983-07-08 1985-01-29 Canon Inc 温度補償回路
JP3586073B2 (ja) * 1997-07-29 2004-11-10 株式会社東芝 基準電圧発生回路
US6891358B2 (en) 2002-12-27 2005-05-10 Analog Devices, Inc. Bandgap voltage reference circuit with high power supply rejection ratio (PSRR) and curvature correction
US7119528B1 (en) * 2005-04-26 2006-10-10 International Business Machines Corporation Low voltage bandgap reference with power supply rejection
US7636010B2 (en) * 2007-09-03 2009-12-22 Elite Semiconductor Memory Technology Inc. Process independent curvature compensation scheme for bandgap reference
US7612606B2 (en) 2007-12-21 2009-11-03 Analog Devices, Inc. Low voltage current and voltage generator
US7750728B2 (en) 2008-03-25 2010-07-06 Analog Devices, Inc. Reference voltage circuit
TWI377461B (en) * 2008-05-15 2012-11-21 Pixart Imaging Inc Reference voltage adjustment circuits for temperature compensation and related transmitter devices
CN101923366B (zh) 2009-06-17 2012-10-03 中国科学院微电子研究所 带熔丝校准的cmos带隙基准电压源
CN101630176B (zh) * 2009-07-28 2011-11-16 中国科学院微电子研究所 低电压cmos带隙基准电压源
CN102236359B (zh) * 2010-02-22 2015-07-29 塞瑞斯逻辑公司 不随电源变化的带隙参考系统
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TWI400884B (zh) * 2010-05-28 2013-07-01 Macronix Int Co Ltd 時鐘積體電路
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Publication number Publication date
US9898029B2 (en) 2018-02-20
WO2017105796A1 (en) 2017-06-22
CA3003912A1 (en) 2017-06-22
JP6800979B2 (ja) 2020-12-16
EP3391171B1 (en) 2024-02-14
BR112018011919A2 (pt) 2018-11-27
TWI643049B (zh) 2018-12-01
KR102579232B1 (ko) 2023-09-14
TW201725468A (zh) 2017-07-16
JP2018537789A (ja) 2018-12-20
US20170168518A1 (en) 2017-06-15
KR20180095523A (ko) 2018-08-27
CN108369428A (zh) 2018-08-03
EP3391171A1 (en) 2018-10-24

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