Classifications

• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is DC
  • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/26—Current mirrors
  • G05F3/262—Current mirrors using field-effect transistors only
• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is DC
  • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
  • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
  • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is DC
  • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is DC
  • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
  • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is DC
  • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
  • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
  • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is DC
  • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/26—Current mirrors
  • G05F3/267—Current mirrors using both bipolar and field-effect technology
• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is DC
  • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Definitions

• aspects of the present disclosure relate generally to generating temperature- compensated reference voltages, and more particularly, to a temperature-compensated reference voltage generator that generates temperature-compensated currents by impressing controlled voltages across resistors.
• a bandgap reference voltage source generates a reference voltage VREF that is substantially constant over a defined (very wide) temperature range.
• the reference voltage VREF is used in many applications, such as for voltage regulation where a supply voltage is regulated based on the reference voltage.
• the bandgap reference voltage generated is typically around 1.2 Volts because the source of the voltage is based on the 1.22 eV bandgap of silicon at zero (0) degree Kelvin.
• the bandgap reference voltage VREF is about 1.2 Volts
• a bandgap reference voltage source requires a supply voltage greater than the 1.2 Volts, such as a supply voltage of 1.4 Volts to accommodate, for example, a 200 millivolt (mV) drain-to-source voltage Vds of a field effect transistor (FET) used for biasing the bandgap reference voltage.
• mV millivolt
• FET field effect transistor
• An aspect of the disclosure relates to an apparatus configured to generate a temperature- compensated reference voltage.
• the apparatus includes first and second set of resistors; a current generator configured to generate a first temperature-compensated current through the first set of one or more resistors, wherein a first voltage is generated across the first set of one or more resistors based on the first temperature-compensated current; a control circuit configured to generate a second voltage across the second set of one or more resistors, wherein the second voltage is based on the first voltage, and wherein a second temperature-compensated current is generated through the second set of resistors based on the second voltage; and a third set of one or more resistors through which the second temperature-compensated current flows, wherein the temperature-compensated reference voltage is generated across the third set of one or more resistors based on the second temperature-compensated current.
• Another aspect of the disclosure relates to a method for generating a temperature- compensated reference voltage.
• the method includes generating a first temperature- compensated current through a first set of one or more resistors, wherein a first voltage is generated across the first set of one or more resistors based on the first temperature- compensated current; generating a second voltage across a second set of one or more resistors, wherein the second voltage is based on the first voltage, and wherein a second temperature-compensated current is generated through the second set of resistors based on the second voltage; and applying the second temperature-compensated current through a third set of one or more resistors, wherein the temperature-compensated reference voltage is generated across the third set of one or more resistors.
• the apparatus comprises means for generating a first temperature-compensated current through a first set of one or more resistors, wherein a first voltage is generated across the first set of one or more resistors based on the first temperature-compensated current; means for generating a second voltage across a second set of one or more resistors, wherein the second voltage is based on the first voltage, and wherein a second temperature-compensated current is generated through the second set of resistors based on the second voltage; and means for applying the second temperature-compensated current through a third set of one or more resistors, wherein the temperature-compensated reference voltage is generated across the third set of one or more resistors.
• the one or more embodiments include the features hereinafter fully described and particularly pointed out in the claims.
• the following description and the annexed drawings set forth in detail certain illustrative aspects of the one or more embodiments. These aspects are indicative, however, of but a few of the various ways in which the principles of various embodiments may be employed and the description embodiments are intended to include all such aspects and their equivalents.
• FIG. 1 illustrates a schematic diagram of an exemplary apparatus for generating a temperature-compensated reference voltage in accordance with an aspect of the disclosure.
• FIG. 2 illustrates a schematic diagram of another exemplary apparatus for generating a temperature-compensated reference voltage in accordance with another aspect of the disclosure.
• FIG. 3 illustrates a schematic diagram of yet another exemplary apparatus for generating a temperature-compensated reference voltage in accordance with another aspect of the disclosure.
• FIG. 4 illustrates a schematic diagram of still another exemplary apparatus for generating a temperature-compensated reference voltage in accordance with another aspect of the disclosure.
• FIG. 5 illustrates a flow diagram of an exemplary method of generating a temperature- compensated reference voltage in accordance with another aspect of the disclosure.
• FIG. 1 illustrates a schematic diagram of an exemplary apparatus 100 for generating a temperature-compensated reference voltage VREF in accordance with an aspect of the disclosure.
• the apparatus 100 includes a sub-circuit 110 for generating a complementary to absolute temperature (CTAT) current ICTAT (e.g., a negative temperature coefficient current).
• the sub-circuit 110 includes field effect transistor (FET) Ml, resistor R4, and diode Dl .
• the FET Ml which may be implemented with a p-channel metal oxide semiconductor (PMOS) FET, is coupled in series with the parallel-coupling of resistor R4 and diode Dl between a first voltage rail (e.g., Vdd) and a second voltage rail (e.g., ground).
• the FET Ml serving as a current source, is configured to generate a current II, which is split between the resistor R4 and diode Dl .
• the voltage VA formed across the diode Dl has a negative temperature coefficient, e.g., a CTAT voltage.
• the voltage VA is also across the resistor R4.
• an ICTAT current is formed through resistor R4.
• the apparatus 100 includes a sub-circuit 120 for generating a proportional to absolute temperature (PTAT) current.
• the sub-circuit 120 includes resistors R5 and R6, a diode bank 125 of N parallel diodes D21 to D2N, an operational amplifier (Op Amp) 130, and FET M2.
• the FET M2, resistor R5, and diode bank 125 are coupled in series between Vdd and ground.
• the FET M2 which may be implemented with a PMOS FET, is also coupled in series with resistor R6 between Vdd and ground.
• the Op Amp 130 includes a negative input terminal configured to receive the voltage VA across the diode Dl, a positive input terminal configured to receive a voltage VB across the series connection of the resistor R5 and diode bank 125, and an output terminal coupled to the gates of FETs Ml and M2.
• the current through resistor R6 is also a ICTAT current, e.g., substantially the same as the current ICTAT through resistor R4.
• the current through diode Dl is substantially the same as the combined current through the N parallel diodes D21 to D2N of the diode bank 125.
• the diodes D21 and D2N of the diode bank 125 are each configured to be substantially the same as the diode D l .
• the current density through each of the diodes of the diode bank 125 is a factor of N less than the current density through diode Dl .
• the diode bank 125 produces a CTAT voltage that is different than the CTAT voltage across diode Dl .
• a voltage is produced across the resistor R5 that has a positive temperature coefficient (e.g., a PTAT voltage). This produces a current IPTAT through resistor R5.
• the current 12 produced by FET M2 is a combination (e.g., sum) of the currents IPTAT and ICTAT-
• the current 12 may be configured to be substantially constant over a defined range of temperatures.
• the apparatus 100 further includes a sub-circuit 140 configured to generate the temperature-compensated reference voltage VREF based on the temperature- compensated current 12 through M2.
• the sub-circuit 140 includes FET M3 and resistor Rl .
• the temperature-compensated current 12 is mirrored via the current mirror configuration of FETs M2 and M3 (e.g., the FETs are configured to have substantially the same size and the same gate-to-source voltage Vgs) to form a temperature- compensated current 13.
• the FET M3 which may also be implemented with a PMOS FET, is coupled in series with a resistor R7 between Vdd and ground, which results in the temperature-compensated current 13 flowing through resistor R7 to form the temperature-compensated reference voltage VREF- [0024]
• the currents II, 12, and 12 generated by the current sources Ml, M2, and M3 should be substantially the same.
• the supply voltage Vdd being relatively low (e.g., sub IV)
• the drain- to-source voltage Vds of FETs Ml and M2 may become relatively small due to the voltages VA and VB increasing with temperature reduction.
• the Vds of FETs Ml and M2 may be significantly smaller than the Vds of FET M3; and hence, the FETs Ml and M2 may have output impedances different than the output impedance of FET M3. This produces a current mismatch between current 13 and currents II and 12, which produces error in the reference voltage VREF-
• Additional mismatch among the currents II, 12, and 13 may be caused by mismatch in the FETs Ml, M2, and M3 due to process variation.
• FIG. 2 illustrates a schematic diagram of another exemplary apparatus 200 for generating a temperature-compensated reference voltage VREF in accordance with another aspect of the disclosure.
• the apparatus 200 is configured to address the problem associated with the FETs Ml, M2, and M3 having different drain-to-source voltages Vds; and hence, different output impedances which produce current mismatch among currents II, 12, and 13.
• the apparatus 200 is similar to that of apparatus 100, but includes a modified reference voltage VREF generating sub-circuit 240 having an additional control circuit to ensure that the voltages across the current source FETs Ml, M2, and M3 are substantially the same.
• the sub-circuit 240 includes an Op Amp 245 and a FET M4.
• the Op Amp 245 includes a positive input configured to receive the voltage V B , a negative input coupled to the drain of FET M3, and an output coupled to a gate of FET M4.
• the FET M4 which may be implemented with a PMOS FET, is coupled between FET M3 and resistor R7.
• the reference voltage VREF is generated at the drain of FET M4.
• the Op Amp 245 controls the gate of FET M4 such that voltage Vc is substantially the same as voltage VB.
• voltages across the current source FETs Ml, M2, and M3 are substantially the same.
• FIG. 3 illustrates a schematic diagram of yet another exemplary apparatus 300 for generating a temperature-compensated reference voltage VREF in accordance with another aspect of the disclosure.
• the concept behind the apparatus 300 stems from the fact that resistors may be made more consistent than FETs; and thus, better matching between the resistors may be achieved as compared to FETs. Accordingly, the concept behind apparatus 300 is to replace the current sources Ml, M2, and M3 with respective resistors Rl, R2, and R3 (having substantially equal resistance) and apply negative feedback control using Op Amps 130 and 245 to impress substantially the same voltages across the resistors Rl , R2, and R3. This ensures that the currents II, 12, and 13 generated respectively through the resistors Rl, R2, and R3 are substantially the same, which leads to significant reduction in error in the reference voltage VREF-
• the apparatus 300 includes a sub-circuit 310 configured to generate a ICTAT current, a sub-circuit 320 configured to generate a IPTAT current, and a sub-circuit 340 configured to generate a temperature-compensated reference voltage VREF-
• the sub- circuits 310, 320, and 340 are respectively similar to sub-circuits 1 10, 120, and 240 of apparatus 200, but differ in that resistors Rl, R2, and R3 are substituted for the current source FETs Ml, M2, and M3, respectively.
• the apparatus 300 further includes a FET M10, which may be implemented with a PMOS FET, coupled between the supply voltage rail Vdd and the resistors Rl, R2, and R3.
• the output of the Op Amp 130 is coupled to the gate of FET M10 to control a voltage VSB at a node common to resistors Rl, R2, and R2. This is called single-point biasing, where the negative feedback operates on a bias voltage (e.g., VSB) at a single node.
• a bias voltage e.g., VSB
• the negative feedback control provided by Op Amp 130 forces the voltage VA and VB to be substantially the same.
• the negative feedback control produced by Op Amp 245 forces the voltages VB and Vc to be substantially the same.
• FIG. 4 illustrates a schematic diagram of still another exemplary apparatus 400 for generating a temperature-compensated reference voltage VREF in accordance with another aspect of the disclosure.
• the apparatus 400 may be an example of a more detailed implementation of reference voltage source 300.
• the apparatus 400 includes a sub-circuit 410 configured to generate a ICTAT current, a sub-circuit 420 configured to generate a IPTAT current, and a sub-circuit 440 configured to generate a temperature- compensated reference voltage VREF-
• the sub- circuits 410, 420, and 440 are similar to sub-circuits 310, 320, and 340 of apparatus 300, respectively.
• the remaining circuitry of apparatus 400 namely Op Amps 130 and 245 and FET M10, are substantially the same as that of apparatus 300.
• resistor Rl is replaced by series-coupled resistors Rl l and R12;
• resistor R2 is replaced by series- coupled resistors R21 and R22;
• resistor R3 is replaced by series-coupled resistors R31 and R32;
• resistor R4 is replaced by series-coupled resistors R41 -R48;
• resistor R5 is replaced by a pair of series-coupled resistors R51-R52 and R53-R54 coupled in parallel with each other;
• resistor R6 is replaced by series-coupled resistors R61 -R68;
• resistor R7 is replaced by series-coupled resistors R71 -R74;
• diode Dl is replaced with diode-connected bipolar transistor Ql ; and (9) the diode bank 125 of parallel diodes D21 -D2N is replaced by a diode bank 425 of parallel diode- connected bipolar transistors
• apparatus 400 The principle of operation of apparatus 400 is essentially the same as that of apparatus 300.
• the reasons for multiple resistors in apparatus 400 in place of single resistors in apparatus 300 are two folds: (1) Due to process requirements (e.g., limitations on the length-to-width ratio of a resistor), multiple resistors (each compliant with the process requirement) may need to be connected in series or in parallel to achieve the desired resistance; and (2) multiple resistors allow for process variations to be statistically averaged out for better control of the total resistance of each set of resistors. Note that the number and/or combination of resistors that replace each single resistor may vary in other implementations. It should be apparent to one of skill in the art that the concept disclosed herein is not limited to the particular implementation illustrated in FIG. 4.
• FIG. 5 illustrates a flow diagram of an exemplary method 500 for generating a temperature-compensated reference voltage VREF in accordance with another aspect of the disclosure.
• the method 500 includes generating a first temperature-compensated current through a first set of one or more resistors, wherein a first voltage is generated across the first set of one or more resistors based on the first temperature-compensated current (block 502).
• examples of means for generating a first temperature- compensated current 12 include the circuitry having: (1) resistor(s) Rl (or R11 -R12), R2 (or R21 -R22), R4 (or R41 -R48), R5 (or R51 -R54), and R6 (or R61-R68); (2) diode Dl or diode-connected transistor Ql ; (3) diode bank 125 of diodes D21-D2N coupled in parallel or diode bank 425 of diode-connected transistors Q21-Q2N; and (4) control circuit including Op Amp 130 and transistor (e.g., FET) M10.
• the first temperature- compensated current 12 flows through a first set of one or more resistor(s) R2 or R21 - R22, wherein a first voltage (VSB-VB) is generated across the first set of one or more resistor(s) R2 or R21 -R22 based on the first temperature-compensated current 12.
• a first voltage VSB-VB
• the method 500 includes generating a second voltage across a second set of one or more resistors, wherein the second voltage is based on the first voltage, and wherein a second temperature-compensated current is generated through the second set of resistors based on the second voltage (block 504).
• examples of means for generating a second voltage include Op Amp 245 and transistor (e.g., FET) M4.
• the second voltage (VSB-VC) is generated across the second set of one or more resistor(s) R3 or R31 -R32, wherein the second voltage (VSB-VC) is based (e.g., substantially equal to) the first voltage (VSB-VB), and wherein the second temperature-compensated current 13 is generated through the second set of resistor(s) R3 or R31 -R32 based on the second voltage (VSB-VC).
• the method 500 includes applying the second current through a third set of one or more resistors, wherein a temperature-compensated reference voltage is generated across the third set of one or more resistors (block 506).
• examples of means for applying the second current through a third set of one or more resistors include the series-connection of the resistor R3 or R31 -R32, FET M4, and resistor(s) R7 or R71-R74.
• the second current 13 is applied through the third set of one or more resistor(s) R7 or R71-R74 to generate a temperature-compensated reference voltage VREF across the third set of one or more resistor(s) R7 or R71 -R74.

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