CA3003912A1 - Temperature-compensated reference voltage generator that impresses controlled voltages across resistors - Google Patents
Temperature-compensated reference voltage generator that impresses controlled voltages across resistors Download PDFInfo
- Publication number
- CA3003912A1 CA3003912A1 CA3003912A CA3003912A CA3003912A1 CA 3003912 A1 CA3003912 A1 CA 3003912A1 CA 3003912 A CA3003912 A CA 3003912A CA 3003912 A CA3003912 A CA 3003912A CA 3003912 A1 CA3003912 A1 CA 3003912A1
- Authority
- CA
- Canada
- Prior art keywords
- voltage
- resistors
- current
- generating
- ctat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000000295 complement effect Effects 0.000 claims abstract description 5
- 238000010586 diagram Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/267—Current mirrors using both bipolar and field-effect technology
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/970,265 US9898029B2 (en) | 2015-12-15 | 2015-12-15 | Temperature-compensated reference voltage generator that impresses controlled voltages across resistors |
| US14/970,265 | 2015-12-15 | ||
| PCT/US2016/063139 WO2017105796A1 (en) | 2015-12-15 | 2016-11-21 | Temperature-compensated reference voltage generator that impresses controlled voltages across resistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3003912A1 true CA3003912A1 (en) | 2017-06-22 |
Family
ID=57544532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3003912A Abandoned CA3003912A1 (en) | 2015-12-15 | 2016-11-21 | Temperature-compensated reference voltage generator that impresses controlled voltages across resistors |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9898029B2 (enExample) |
| EP (1) | EP3391171B1 (enExample) |
| JP (1) | JP6800979B2 (enExample) |
| KR (1) | KR102579232B1 (enExample) |
| CN (1) | CN108369428B (enExample) |
| BR (1) | BR112018011919A2 (enExample) |
| CA (1) | CA3003912A1 (enExample) |
| TW (1) | TWI643049B (enExample) |
| WO (1) | WO2017105796A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10222817B1 (en) * | 2017-09-29 | 2019-03-05 | Cavium, Llc | Method and circuit for low voltage current-mode bandgap |
| TWI651609B (zh) * | 2017-02-09 | 2019-02-21 | 新唐科技股份有限公司 | 低電壓鎖定電路及其整合參考電壓產生電路之裝置 |
| CN109617410B (zh) * | 2018-12-28 | 2024-01-19 | 中国电子科技集团公司第五十八研究所 | 一种新型浮动电压检测电路 |
| CN112034920B (zh) * | 2019-06-04 | 2022-06-17 | 极创电子股份有限公司 | 电压产生器 |
| US11127437B2 (en) * | 2019-10-01 | 2021-09-21 | Macronix International Co., Ltd. | Managing startups of bandgap reference circuits in memory systems |
| EP3812873B1 (en) * | 2019-10-24 | 2025-02-26 | NXP USA, Inc. | Voltage reference generation with compensation for temperature variation |
| US11233513B2 (en) * | 2019-11-05 | 2022-01-25 | Mediatek Inc. | Reference voltage buffer with settling enhancement |
| TWI792977B (zh) * | 2022-04-11 | 2023-02-11 | 立錡科技股份有限公司 | 具有高次溫度補償功能的參考訊號產生電路 |
| US11815927B1 (en) * | 2022-05-19 | 2023-11-14 | Changxin Memory Technologies, Inc. | Bandgap reference circuit and chip |
| US20240393819A1 (en) * | 2023-05-25 | 2024-11-28 | Silicon Laboratories Inc. | Voltage and current reference circuits |
| US12267071B2 (en) * | 2023-06-01 | 2025-04-01 | Allegro Microsystems, Llc | Desaturation circuit having temperature compensation |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017316A (ja) * | 1983-07-08 | 1985-01-29 | Canon Inc | 温度補償回路 |
| JP3586073B2 (ja) * | 1997-07-29 | 2004-11-10 | 株式会社東芝 | 基準電圧発生回路 |
| US6891358B2 (en) | 2002-12-27 | 2005-05-10 | Analog Devices, Inc. | Bandgap voltage reference circuit with high power supply rejection ratio (PSRR) and curvature correction |
| US7119528B1 (en) * | 2005-04-26 | 2006-10-10 | International Business Machines Corporation | Low voltage bandgap reference with power supply rejection |
| US7636010B2 (en) * | 2007-09-03 | 2009-12-22 | Elite Semiconductor Memory Technology Inc. | Process independent curvature compensation scheme for bandgap reference |
| US7612606B2 (en) | 2007-12-21 | 2009-11-03 | Analog Devices, Inc. | Low voltage current and voltage generator |
| US7750728B2 (en) | 2008-03-25 | 2010-07-06 | Analog Devices, Inc. | Reference voltage circuit |
| TWI377461B (en) * | 2008-05-15 | 2012-11-21 | Pixart Imaging Inc | Reference voltage adjustment circuits for temperature compensation and related transmitter devices |
| CN101923366B (zh) | 2009-06-17 | 2012-10-03 | 中国科学院微电子研究所 | 带熔丝校准的cmos带隙基准电压源 |
| CN101630176B (zh) * | 2009-07-28 | 2011-11-16 | 中国科学院微电子研究所 | 低电压cmos带隙基准电压源 |
| CN102236359B (zh) * | 2010-02-22 | 2015-07-29 | 塞瑞斯逻辑公司 | 不随电源变化的带隙参考系统 |
| US8536854B2 (en) | 2010-09-30 | 2013-09-17 | Cirrus Logic, Inc. | Supply invariant bandgap reference system |
| TWI400884B (zh) * | 2010-05-28 | 2013-07-01 | Macronix Int Co Ltd | 時鐘積體電路 |
| TWI473433B (zh) * | 2011-10-21 | 2015-02-11 | Macronix Int Co Ltd | 時鐘積體電路 |
| US8941369B2 (en) | 2012-03-19 | 2015-01-27 | Sandisk Technologies Inc. | Curvature compensated band-gap design trimmable at a single temperature |
| US8937468B2 (en) * | 2012-08-13 | 2015-01-20 | Northrop Grumman Systems Corporation | Power supply systems and methods |
| TWI521326B (zh) * | 2013-12-27 | 2016-02-11 | 慧榮科技股份有限公司 | 帶隙參考電壓產生電路 |
| EP2897021B1 (en) * | 2014-01-21 | 2020-04-29 | Dialog Semiconductor (UK) Limited | An apparatus and method for a low voltage reference and oscillator |
-
2015
- 2015-12-15 US US14/970,265 patent/US9898029B2/en active Active
-
2016
- 2016-11-21 BR BR112018011919A patent/BR112018011919A2/pt not_active Application Discontinuation
- 2016-11-21 CA CA3003912A patent/CA3003912A1/en not_active Abandoned
- 2016-11-21 KR KR1020187016551A patent/KR102579232B1/ko active Active
- 2016-11-21 CN CN201680072887.2A patent/CN108369428B/zh active Active
- 2016-11-21 TW TW105138039A patent/TWI643049B/zh not_active IP Right Cessation
- 2016-11-21 WO PCT/US2016/063139 patent/WO2017105796A1/en not_active Ceased
- 2016-11-21 EP EP16810538.5A patent/EP3391171B1/en active Active
- 2016-11-21 JP JP2018530836A patent/JP6800979B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9898029B2 (en) | 2018-02-20 |
| WO2017105796A1 (en) | 2017-06-22 |
| JP6800979B2 (ja) | 2020-12-16 |
| EP3391171B1 (en) | 2024-02-14 |
| BR112018011919A2 (pt) | 2018-11-27 |
| TWI643049B (zh) | 2018-12-01 |
| KR102579232B1 (ko) | 2023-09-14 |
| TW201725468A (zh) | 2017-07-16 |
| JP2018537789A (ja) | 2018-12-20 |
| US20170168518A1 (en) | 2017-06-15 |
| CN108369428B (zh) | 2020-01-14 |
| KR20180095523A (ko) | 2018-08-27 |
| CN108369428A (zh) | 2018-08-03 |
| EP3391171A1 (en) | 2018-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |
Effective date: 20210831 |
|
| FZDE | Discontinued |
Effective date: 20210831 |