TWI643049B - 用於產生溫度補償參考電壓之裝置及方法 - Google Patents

用於產生溫度補償參考電壓之裝置及方法 Download PDF

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Publication number
TWI643049B
TWI643049B TW105138039A TW105138039A TWI643049B TW I643049 B TWI643049 B TW I643049B TW 105138039 A TW105138039 A TW 105138039A TW 105138039 A TW105138039 A TW 105138039A TW I643049 B TWI643049 B TW I643049B
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TW
Taiwan
Prior art keywords
voltage
resistors
current
ctat
generating
Prior art date
Application number
TW105138039A
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English (en)
Chinese (zh)
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TW201725468A (zh
Inventor
陶德 瑪根 雷斯穆斯
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美商高通公司
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Publication of TW201725468A publication Critical patent/TW201725468A/zh
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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
TW105138039A 2015-12-15 2016-11-21 用於產生溫度補償參考電壓之裝置及方法 TWI643049B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/970,265 US9898029B2 (en) 2015-12-15 2015-12-15 Temperature-compensated reference voltage generator that impresses controlled voltages across resistors
US14/970,265 2015-12-15

Publications (2)

Publication Number Publication Date
TW201725468A TW201725468A (zh) 2017-07-16
TWI643049B true TWI643049B (zh) 2018-12-01

Family

ID=57544532

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105138039A TWI643049B (zh) 2015-12-15 2016-11-21 用於產生溫度補償參考電壓之裝置及方法

Country Status (9)

Country Link
US (1) US9898029B2 (enExample)
EP (1) EP3391171B1 (enExample)
JP (1) JP6800979B2 (enExample)
KR (1) KR102579232B1 (enExample)
CN (1) CN108369428B (enExample)
BR (1) BR112018011919A2 (enExample)
CA (1) CA3003912A1 (enExample)
TW (1) TWI643049B (enExample)
WO (1) WO2017105796A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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TWI716323B (zh) * 2019-06-04 2021-01-11 極創電子股份有限公司 電壓產生器
TWI729957B (zh) * 2019-11-05 2021-06-01 聯發科技股份有限公司 參考電壓緩衝器

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US10222817B1 (en) * 2017-09-29 2019-03-05 Cavium, Llc Method and circuit for low voltage current-mode bandgap
TWI651609B (zh) * 2017-02-09 2019-02-21 新唐科技股份有限公司 低電壓鎖定電路及其整合參考電壓產生電路之裝置
CN109617410B (zh) * 2018-12-28 2024-01-19 中国电子科技集团公司第五十八研究所 一种新型浮动电压检测电路
US11127437B2 (en) * 2019-10-01 2021-09-21 Macronix International Co., Ltd. Managing startups of bandgap reference circuits in memory systems
EP3812873B1 (en) * 2019-10-24 2025-02-26 NXP USA, Inc. Voltage reference generation with compensation for temperature variation
TWI792977B (zh) * 2022-04-11 2023-02-11 立錡科技股份有限公司 具有高次溫度補償功能的參考訊號產生電路
US11815927B1 (en) * 2022-05-19 2023-11-14 Changxin Memory Technologies, Inc. Bandgap reference circuit and chip
US20240393819A1 (en) * 2023-05-25 2024-11-28 Silicon Laboratories Inc. Voltage and current reference circuits
US12267071B2 (en) * 2023-06-01 2025-04-01 Allegro Microsystems, Llc Desaturation circuit having temperature compensation

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US7119528B1 (en) * 2005-04-26 2006-10-10 International Business Machines Corporation Low voltage bandgap reference with power supply rejection
TW200912587A (en) * 2007-09-03 2009-03-16 Elite Micropower Inc Voltage reference circuit
TW200947182A (en) * 2008-05-15 2009-11-16 Pixart Imaging Inc Reference voltage adjustment circuits for temperature compensation and related transmitter devices
CN101630176B (zh) * 2009-07-28 2011-11-16 中国科学院微电子研究所 低电压cmos带隙基准电压源
US20110291638A1 (en) * 2010-05-28 2011-12-01 Macronix International Co., Ltd. Clock Integrated Circuit
US20120081099A1 (en) * 2010-09-30 2012-04-05 Melanson John L Supply invariant bandgap reference system
TW201318343A (zh) * 2011-10-21 2013-05-01 Macronix Int Co Ltd 時鐘積體電路
TW201415189A (zh) * 2012-08-13 2014-04-16 Northrop Grumman Systems Corp 電源供應系統及方法
US20150205319A1 (en) * 2014-01-21 2015-07-23 Dialog Semiconductor Gmbh Apparatus and Method for Low Voltage Reference and Oscillator

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JPS6017316A (ja) * 1983-07-08 1985-01-29 Canon Inc 温度補償回路
JP3586073B2 (ja) * 1997-07-29 2004-11-10 株式会社東芝 基準電圧発生回路
US6891358B2 (en) 2002-12-27 2005-05-10 Analog Devices, Inc. Bandgap voltage reference circuit with high power supply rejection ratio (PSRR) and curvature correction
US7612606B2 (en) 2007-12-21 2009-11-03 Analog Devices, Inc. Low voltage current and voltage generator
US7750728B2 (en) 2008-03-25 2010-07-06 Analog Devices, Inc. Reference voltage circuit
CN101923366B (zh) 2009-06-17 2012-10-03 中国科学院微电子研究所 带熔丝校准的cmos带隙基准电压源
CN102236359B (zh) * 2010-02-22 2015-07-29 塞瑞斯逻辑公司 不随电源变化的带隙参考系统
US8941369B2 (en) 2012-03-19 2015-01-27 Sandisk Technologies Inc. Curvature compensated band-gap design trimmable at a single temperature
TWI521326B (zh) * 2013-12-27 2016-02-11 慧榮科技股份有限公司 帶隙參考電壓產生電路

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Publication number Priority date Publication date Assignee Title
US7119528B1 (en) * 2005-04-26 2006-10-10 International Business Machines Corporation Low voltage bandgap reference with power supply rejection
TW200912587A (en) * 2007-09-03 2009-03-16 Elite Micropower Inc Voltage reference circuit
TW200947182A (en) * 2008-05-15 2009-11-16 Pixart Imaging Inc Reference voltage adjustment circuits for temperature compensation and related transmitter devices
CN101630176B (zh) * 2009-07-28 2011-11-16 中国科学院微电子研究所 低电压cmos带隙基准电压源
US20110291638A1 (en) * 2010-05-28 2011-12-01 Macronix International Co., Ltd. Clock Integrated Circuit
US20120081099A1 (en) * 2010-09-30 2012-04-05 Melanson John L Supply invariant bandgap reference system
TW201318343A (zh) * 2011-10-21 2013-05-01 Macronix Int Co Ltd 時鐘積體電路
TW201415189A (zh) * 2012-08-13 2014-04-16 Northrop Grumman Systems Corp 電源供應系統及方法
US20150205319A1 (en) * 2014-01-21 2015-07-23 Dialog Semiconductor Gmbh Apparatus and Method for Low Voltage Reference and Oscillator

Cited By (3)

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Publication number Priority date Publication date Assignee Title
TWI716323B (zh) * 2019-06-04 2021-01-11 極創電子股份有限公司 電壓產生器
TWI729957B (zh) * 2019-11-05 2021-06-01 聯發科技股份有限公司 參考電壓緩衝器
US11233513B2 (en) 2019-11-05 2022-01-25 Mediatek Inc. Reference voltage buffer with settling enhancement

Also Published As

Publication number Publication date
US9898029B2 (en) 2018-02-20
WO2017105796A1 (en) 2017-06-22
CA3003912A1 (en) 2017-06-22
JP6800979B2 (ja) 2020-12-16
EP3391171B1 (en) 2024-02-14
BR112018011919A2 (pt) 2018-11-27
KR102579232B1 (ko) 2023-09-14
TW201725468A (zh) 2017-07-16
JP2018537789A (ja) 2018-12-20
US20170168518A1 (en) 2017-06-15
CN108369428B (zh) 2020-01-14
KR20180095523A (ko) 2018-08-27
CN108369428A (zh) 2018-08-03
EP3391171A1 (en) 2018-10-24

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