CN108346568B - 处理被加工物的方法 - Google Patents

处理被加工物的方法 Download PDF

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Publication number
CN108346568B
CN108346568B CN201810067867.7A CN201810067867A CN108346568B CN 108346568 B CN108346568 B CN 108346568B CN 201810067867 A CN201810067867 A CN 201810067867A CN 108346568 B CN108346568 B CN 108346568B
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China
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temperature
electrostatic chuck
etching
workpiece
gas
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CN201810067867.7A
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Chinese (zh)
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CN108346568A (zh
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后平拓
工藤仁
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
CN201810067867.7A 2017-01-24 2018-01-24 处理被加工物的方法 Active CN108346568B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210338506.8A CN114695109B (zh) 2017-01-24 2018-01-24 处理被加工物的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-010539 2017-01-24
JP2017010539A JP6820206B2 (ja) 2017-01-24 2017-01-24 被加工物を処理する方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202210338506.8A Division CN114695109B (zh) 2017-01-24 2018-01-24 处理被加工物的方法

Publications (2)

Publication Number Publication Date
CN108346568A CN108346568A (zh) 2018-07-31
CN108346568B true CN108346568B (zh) 2022-04-22

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CN201810067867.7A Active CN108346568B (zh) 2017-01-24 2018-01-24 处理被加工物的方法
CN202210338506.8A Active CN114695109B (zh) 2017-01-24 2018-01-24 处理被加工物的方法

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Country Status (5)

Country Link
US (1) US10361070B2 (enExample)
JP (1) JP6820206B2 (enExample)
KR (1) KR102103588B1 (enExample)
CN (2) CN108346568B (enExample)
TW (1) TWI753085B (enExample)

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JP7045883B2 (ja) * 2018-03-07 2022-04-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102242816B1 (ko) * 2018-08-13 2021-04-21 세메스 주식회사 기판 온도 제어 장치, 그를 포함하는 기판 처리 장치 및 기판 처리 방법
US11437261B2 (en) 2018-12-11 2022-09-06 Applied Materials, Inc. Cryogenic electrostatic chuck
JP7277225B2 (ja) * 2019-04-08 2023-05-18 東京エレクトロン株式会社 エッチング方法、及び、プラズマ処理装置
US11764041B2 (en) 2019-06-14 2023-09-19 Applied Materials, Inc. Adjustable thermal break in a substrate support
JP7285152B2 (ja) * 2019-07-08 2023-06-01 東京エレクトロン株式会社 プラズマ処理装置
US11373893B2 (en) 2019-09-16 2022-06-28 Applied Materials, Inc. Cryogenic electrostatic chuck
US11646183B2 (en) 2020-03-20 2023-05-09 Applied Materials, Inc. Substrate support assembly with arc resistant coolant conduit
US12334315B2 (en) 2020-04-30 2025-06-17 Applied Materials, Inc. Cooled substrate support assembly for radio frequency environments
US12444585B2 (en) 2020-05-29 2025-10-14 Applied Materials, Inc. Electrical connector for cooled substrate support assembly
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
JP7489865B2 (ja) * 2020-08-24 2024-05-24 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102489934B1 (ko) * 2021-02-17 2023-01-18 대전대학교 산학협력단 식각 처리 장치 및 식각 처리 방법
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR102895925B1 (ko) * 2021-06-30 2025-12-04 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
JP7671716B2 (ja) * 2021-10-08 2025-05-02 日本碍子株式会社 ウエハ載置台
JP7747580B2 (ja) * 2022-04-19 2025-10-01 日本特殊陶業株式会社 半導体製造装置、及び保持装置
KR102800435B1 (ko) * 2023-02-28 2025-04-23 광운대학교 산학협력단 식각 처리 장치의 동작 방법
CN116575012B (zh) * 2023-05-16 2024-12-31 无锡金源半导体科技有限公司 沉积腔室及具有该沉积腔室的薄膜沉积设备
US20250385079A1 (en) * 2024-06-17 2025-12-18 Applied Materials, Inc. Heated Process Kit for Substrate Processing

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US6063710A (en) * 1996-02-26 2000-05-16 Sony Corporation Method and apparatus for dry etching with temperature control
US6071630A (en) * 1996-03-04 2000-06-06 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
CN1505831A (zh) * 2001-03-20 2004-06-16 Ӧ�ò��Ϲ�˾ 蚀刻有机抗反射涂层(arc)的方法
CN1841654A (zh) * 2005-03-31 2006-10-04 东京毅力科创株式会社 载置台的温度控制装置、方法和程序以及处理装置
CN101504915A (zh) * 2008-02-07 2009-08-12 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置
CN103824800A (zh) * 2012-11-15 2014-05-28 东京毅力科创株式会社 基板载置台和基板处理装置
CN105097497A (zh) * 2014-05-09 2015-11-25 东京毅力科创株式会社 蚀刻方法

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US6063710A (en) * 1996-02-26 2000-05-16 Sony Corporation Method and apparatus for dry etching with temperature control
US6071630A (en) * 1996-03-04 2000-06-06 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JPH10116822A (ja) * 1996-10-14 1998-05-06 Sony Corp ドライエッチング装置およびドライエッチング方法
CN1505831A (zh) * 2001-03-20 2004-06-16 Ӧ�ò��Ϲ�˾ 蚀刻有机抗反射涂层(arc)的方法
CN1841654A (zh) * 2005-03-31 2006-10-04 东京毅力科创株式会社 载置台的温度控制装置、方法和程序以及处理装置
CN101504915A (zh) * 2008-02-07 2009-08-12 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置
CN103824800A (zh) * 2012-11-15 2014-05-28 东京毅力科创株式会社 基板载置台和基板处理装置
CN105097497A (zh) * 2014-05-09 2015-11-25 东京毅力科创株式会社 蚀刻方法

Also Published As

Publication number Publication date
CN114695109B (zh) 2025-08-22
CN108346568A (zh) 2018-07-31
CN114695109A (zh) 2022-07-01
JP6820206B2 (ja) 2021-01-27
TWI753085B (zh) 2022-01-21
US10361070B2 (en) 2019-07-23
KR102103588B1 (ko) 2020-04-22
JP2018120925A (ja) 2018-08-02
KR20180087156A (ko) 2018-08-01
TW201836009A (zh) 2018-10-01
US20180211822A1 (en) 2018-07-26

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