TWI753085B - 被加工物之處理方法 - Google Patents

被加工物之處理方法 Download PDF

Info

Publication number
TWI753085B
TWI753085B TW107101484A TW107101484A TWI753085B TW I753085 B TWI753085 B TW I753085B TW 107101484 A TW107101484 A TW 107101484A TW 107101484 A TW107101484 A TW 107101484A TW I753085 B TWI753085 B TW I753085B
Authority
TW
Taiwan
Prior art keywords
temperature
electrostatic chuck
etching
workpiece
chamber
Prior art date
Application number
TW107101484A
Other languages
English (en)
Chinese (zh)
Other versions
TW201836009A (zh
Inventor
後平拓
工藤仁
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201836009A publication Critical patent/TW201836009A/zh
Application granted granted Critical
Publication of TWI753085B publication Critical patent/TWI753085B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
TW107101484A 2017-01-24 2018-01-16 被加工物之處理方法 TWI753085B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-010539 2017-01-24
JP2017010539A JP6820206B2 (ja) 2017-01-24 2017-01-24 被加工物を処理する方法

Publications (2)

Publication Number Publication Date
TW201836009A TW201836009A (zh) 2018-10-01
TWI753085B true TWI753085B (zh) 2022-01-21

Family

ID=62907112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107101484A TWI753085B (zh) 2017-01-24 2018-01-16 被加工物之處理方法

Country Status (5)

Country Link
US (1) US10361070B2 (enExample)
JP (1) JP6820206B2 (enExample)
KR (1) KR102103588B1 (enExample)
CN (2) CN114695109B (enExample)
TW (1) TWI753085B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7045883B2 (ja) * 2018-03-07 2022-04-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102242816B1 (ko) * 2018-08-13 2021-04-21 세메스 주식회사 기판 온도 제어 장치, 그를 포함하는 기판 처리 장치 및 기판 처리 방법
US11437261B2 (en) 2018-12-11 2022-09-06 Applied Materials, Inc. Cryogenic electrostatic chuck
JP7277225B2 (ja) * 2019-04-08 2023-05-18 東京エレクトロン株式会社 エッチング方法、及び、プラズマ処理装置
US11764041B2 (en) 2019-06-14 2023-09-19 Applied Materials, Inc. Adjustable thermal break in a substrate support
JP7285152B2 (ja) * 2019-07-08 2023-06-01 東京エレクトロン株式会社 プラズマ処理装置
US11373893B2 (en) 2019-09-16 2022-06-28 Applied Materials, Inc. Cryogenic electrostatic chuck
US11646183B2 (en) 2020-03-20 2023-05-09 Applied Materials, Inc. Substrate support assembly with arc resistant coolant conduit
US12334315B2 (en) 2020-04-30 2025-06-17 Applied Materials, Inc. Cooled substrate support assembly for radio frequency environments
US12444585B2 (en) 2020-05-29 2025-10-14 Applied Materials, Inc. Electrical connector for cooled substrate support assembly
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
JP7489865B2 (ja) * 2020-08-24 2024-05-24 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102489934B1 (ko) * 2021-02-17 2023-01-18 대전대학교 산학협력단 식각 처리 장치 및 식각 처리 방법
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
JP7671716B2 (ja) * 2021-10-08 2025-05-02 日本碍子株式会社 ウエハ載置台
JP7747580B2 (ja) * 2022-04-19 2025-10-01 日本特殊陶業株式会社 半導体製造装置、及び保持装置
KR102800435B1 (ko) * 2023-02-28 2025-04-23 광운대학교 산학협력단 식각 처리 장치의 동작 방법
CN116575012B (zh) * 2023-05-16 2024-12-31 无锡金源半导体科技有限公司 沉积腔室及具有该沉积腔室的薄膜沉积设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152255A (ja) * 1991-10-02 1993-06-18 Sony Corp ドライエツチング方法
US20160189975A1 (en) * 2014-12-25 2016-06-30 Tokyo Electron Limited Etching method and etching apparatus
US20160379856A1 (en) * 2015-06-23 2016-12-29 Tokyo Electron Limited Etching method and plasma processing apparatus

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3323530B2 (ja) * 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
JP3040630B2 (ja) * 1993-02-16 2000-05-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JPH0982688A (ja) * 1995-09-19 1997-03-28 Sony Corp ドライエッチング方法
JPH09232281A (ja) * 1996-02-26 1997-09-05 Sony Corp ドライエッチング処理方法
US6063710A (en) * 1996-02-26 2000-05-16 Sony Corporation Method and apparatus for dry etching with temperature control
US6071630A (en) * 1996-03-04 2000-06-06 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JP3675065B2 (ja) 1996-10-14 2005-07-27 ソニー株式会社 ドライエッチング方法
US6461974B1 (en) * 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
JP4644943B2 (ja) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6599437B2 (en) * 2001-03-20 2003-07-29 Applied Materials Inc. Method of etching organic antireflection coating (ARC) layers
US6794303B2 (en) * 2002-07-18 2004-09-21 Mosel Vitelic, Inc. Two stage etching of silicon nitride to form a nitride spacer
JP4551256B2 (ja) * 2005-03-31 2010-09-22 東京エレクトロン株式会社 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム
JP4694249B2 (ja) * 2005-04-20 2011-06-08 株式会社日立ハイテクノロジーズ 真空処理装置及び試料の真空処理方法
JP5183058B2 (ja) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド 急速温度勾配コントロールによる基板処理
JP2009188257A (ja) * 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
WO2010109848A1 (ja) * 2009-03-26 2010-09-30 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
JP5606060B2 (ja) * 2009-12-24 2014-10-15 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
KR101870491B1 (ko) * 2014-03-11 2018-06-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 기판 처리 시스템, 박막 트랜지스터의 제조 방법 및 기억 매체
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
JP6018606B2 (ja) * 2014-06-27 2016-11-02 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
JP6661283B2 (ja) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理方法
JP6541439B2 (ja) * 2015-05-29 2019-07-10 東京エレクトロン株式会社 エッチング方法
US9779974B2 (en) * 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152255A (ja) * 1991-10-02 1993-06-18 Sony Corp ドライエツチング方法
US20160189975A1 (en) * 2014-12-25 2016-06-30 Tokyo Electron Limited Etching method and etching apparatus
US20160379856A1 (en) * 2015-06-23 2016-12-29 Tokyo Electron Limited Etching method and plasma processing apparatus

Also Published As

Publication number Publication date
CN114695109A (zh) 2022-07-01
US20180211822A1 (en) 2018-07-26
CN108346568A (zh) 2018-07-31
KR102103588B1 (ko) 2020-04-22
US10361070B2 (en) 2019-07-23
CN114695109B (zh) 2025-08-22
CN108346568B (zh) 2022-04-22
JP2018120925A (ja) 2018-08-02
KR20180087156A (ko) 2018-08-01
TW201836009A (zh) 2018-10-01
JP6820206B2 (ja) 2021-01-27

Similar Documents

Publication Publication Date Title
TWI753085B (zh) 被加工物之處理方法
KR102689531B1 (ko) 플라즈마 처리 장치의 챔버 본체의 내부의 클리닝을 포함하는 플라즈마 처리 방법
KR102106419B1 (ko) 산화 실리콘 및 질화 실리콘을 서로 선택적으로 에칭하는 방법
TWI427668B (zh) A plasma processing device, an electrode temperature adjusting device, and an electrode temperature adjusting method
CN110389607B (zh) 温度控制方法
TW201737408A (zh) 被加工物之處理裝置
JP5551583B2 (ja) 金属系膜の成膜方法および記憶媒体
JP2019160816A (ja) プラズマ処理方法及びプラズマ処理装置
TW202531435A (zh) 通過基板處理系統元件的液態及超臨界流體態非全氟/多氟烷基物質(pfas)流體之循環
WO2023107376A1 (en) Soaking and esc clamping sequence for high bow substrates