CN108291013B - 聚合物、有机层组成物及图案形成方法 - Google Patents

聚合物、有机层组成物及图案形成方法 Download PDF

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CN108291013B
CN108291013B CN201680070703.9A CN201680070703A CN108291013B CN 108291013 B CN108291013 B CN 108291013B CN 201680070703 A CN201680070703 A CN 201680070703A CN 108291013 B CN108291013 B CN 108291013B
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polymer
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CN108291013A (zh
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豆米尼阿·拉特维
郑铉日
权孝英
南宫烂
南沇希
文秀贤
宋炫知
许柳美
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Samsung SDI Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G16/00—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/02—Condensation polymers of aldehydes or ketones with phenols only of ketones
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
CN201680070703.9A 2016-01-20 2016-10-19 聚合物、有机层组成物及图案形成方法 Active CN108291013B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2016-0007089 2016-01-20
KR1020160007089A KR101962419B1 (ko) 2016-01-20 2016-01-20 중합체, 유기막 조성물, 및 패턴형성방법
PCT/KR2016/011759 WO2017126779A1 (ko) 2016-01-20 2016-10-19 중합체, 유기막 조성물, 및 패턴형성방법

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CN108291013A CN108291013A (zh) 2018-07-17
CN108291013B true CN108291013B (zh) 2020-10-16

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KR (1) KR101962419B1 (ko)
CN (1) CN108291013B (ko)
TW (1) TWI667547B (ko)
WO (1) WO2017126779A1 (ko)

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WO2019098109A1 (ja) * 2017-11-16 2019-05-23 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、パターニングされた基板の製造方法並びに化合物
KR102171074B1 (ko) * 2017-12-26 2020-10-28 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법
KR102244470B1 (ko) 2018-07-18 2021-04-23 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법
KR102278459B1 (ko) * 2018-08-21 2021-07-16 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법
KR102260811B1 (ko) 2018-12-26 2021-06-03 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
KR102393686B1 (ko) * 2019-05-21 2022-05-02 삼성에스디아이 주식회사 중합체, 하드마스크 조성물 및 패턴 형성 방법
KR102194297B1 (ko) * 2019-08-06 2020-12-22 최상준 인돌-플루오렌 중합체를 함유하는 반사방지용 하드마스크 조성물
KR102322627B1 (ko) * 2020-01-22 2021-11-08 (주)코이즈 유기 하드마스크용 공중합체 및 이를 포함하는 유기 하드마스크용 조성물
KR102246532B1 (ko) * 2020-10-28 2021-04-29 최상준 반사방지용 하드마스크 조성물

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KR20130039864A (ko) * 2011-10-13 2013-04-23 주식회사 동진쎄미켐 방향족 고리 함유 고분자 및 이를 포함하는 레지스트 하층막 조성물
CN103827163A (zh) * 2011-09-30 2014-05-28 三菱瓦斯化学株式会社 具有芴结构的树脂及光刻用下层膜形成材料
CN105051609A (zh) * 2013-03-26 2015-11-11 东进世美肯株式会社 抗蚀剂下层膜组合物及利用其的图案形成方法
CN105885018A (zh) * 2015-02-17 2016-08-24 三星Sdi株式会社 聚合物、有机层组成物、有机层以及形成图案的方法
CN106188504A (zh) * 2014-09-30 2016-12-07 三星Sdi株式会社 聚合物、有机层组合物、有机层以及形成图案的方法

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WO2013024779A1 (ja) * 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
KR101821705B1 (ko) * 2011-09-06 2018-01-25 주식회사 동진쎄미켐 페놀계 자가가교 고분자 및 이를 포함하는 레지스트 하층막 조성물
JP6124025B2 (ja) * 2012-08-21 2017-05-10 日産化学工業株式会社 多核フェノール類を有するノボラック樹脂を含むレジスト下層膜形成組成物
KR101655394B1 (ko) * 2013-04-25 2016-09-07 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR101752833B1 (ko) * 2014-05-16 2017-06-30 삼성에스디아이 주식회사 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
JP6196190B2 (ja) * 2014-07-08 2017-09-13 信越化学工業株式会社 多層膜形成方法及びパターン形成方法

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CN103827163A (zh) * 2011-09-30 2014-05-28 三菱瓦斯化学株式会社 具有芴结构的树脂及光刻用下层膜形成材料
KR20130039864A (ko) * 2011-10-13 2013-04-23 주식회사 동진쎄미켐 방향족 고리 함유 고분자 및 이를 포함하는 레지스트 하층막 조성물
CN105051609A (zh) * 2013-03-26 2015-11-11 东进世美肯株式会社 抗蚀剂下层膜组合物及利用其的图案形成方法
CN106188504A (zh) * 2014-09-30 2016-12-07 三星Sdi株式会社 聚合物、有机层组合物、有机层以及形成图案的方法
CN105885018A (zh) * 2015-02-17 2016-08-24 三星Sdi株式会社 聚合物、有机层组成物、有机层以及形成图案的方法

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KR20170087294A (ko) 2017-07-28
KR101962419B1 (ko) 2019-03-26
TW201727376A (zh) 2017-08-01
WO2017126779A1 (ko) 2017-07-27
TWI667547B (zh) 2019-08-01
CN108291013A (zh) 2018-07-17

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