CN108153444A - 触控显示设备 - Google Patents

触控显示设备 Download PDF

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Publication number
CN108153444A
CN108153444A CN201711237517.2A CN201711237517A CN108153444A CN 108153444 A CN108153444 A CN 108153444A CN 201711237517 A CN201711237517 A CN 201711237517A CN 108153444 A CN108153444 A CN 108153444A
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China
Prior art keywords
touch
touch control
display device
substrate
distance
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Granted
Application number
CN201711237517.2A
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English (en)
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CN108153444B (zh
Inventor
林小郎
乐瑞仁
王兆祥
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Innolux Corp
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Innolux Display Corp
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Priority to CN202111109692.XA priority Critical patent/CN113821122A/zh
Publication of CN108153444A publication Critical patent/CN108153444A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
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    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/047—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using sets of wires, e.g. crossed wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明公开了一种触控显示设备，包括基板、多个发光单元以及多个触控电极。基板包括第一边，发光单元设置于基板上，且触控电极设置于发光单元上。第一距离为在平行基板的方向上从第一边至发光单元的最小距离，第二距离为在平行基板的方向上从第一边至触控电极的最小距离，且第一距离大于第二距离。

Description

触控显示设备
技术领域
本发明涉及一种触控显示设备，特别是涉及一种自发光触控显示设备。
背景技术
随着显示技术的进步，触控显示设备由于整合有触控与显示功能，从而已成为发展趋势，并普遍应用于各种仪器的外埠中作为输入界面。传统触控显示设备是通过将触控面板黏贴于显示面板上所形成，其中触控面板用于感应手指触控的触控区通常与显示面板用于显示影像的显示区域相同并对齐。由于触控区的边缘是对准显示区的边缘，因此触控显示设备在显示区的边缘对手指的触摸并不灵敏，甚至会延迟对手指触摸的响应。有鉴于此，提升显示区边缘的触控灵敏度实为业界所需。
发明内容
本发明提供一种触控显示设备，依据一些实施例，可提升在显示区边缘的触控灵敏度。
本发明的一实施例提供一种触控显示设备，包括基板、多个发光单元以及多个触控电极。基板包括第一边，发光单元设置于基板上，且触控电极设置于发光单元上。第一距离为在平行基板的方向上从第一边至发光单元的最小距离，第二距离为在平行基板的方向上从第一边至触控电极的最小距离，且第一距离大于第二距离。
附图说明
图1所示为本发明第一实施例的触控显示设备的俯视示意图；
图2所示为沿着图1剖线A-A’的剖视示意图；
图3所示为本发明第一实施例发光单元的俯视示意图；
图4所示为本发明第一实施例的第一变化实施例的发光单元的俯视示意图；
图5所示为本发明第一实施例的第二变化实施例的发光单元的俯视示意图；
图6所示为本发明第一实施例触控元件层的俯视示意图；
图7所示为本发明第一实施例的第三变化实施例的触控元件层的俯视示意图；
图8所示为本发明第一实施例的第四变化实施例的触控元件层的俯视示意图；
图9所示为本发明第一实施例的第五变化实施例的触控元件层的俯视示意图；
图10所示为本发明第一实施例的第六变化实施例的触控元件层的俯视示意图；
图11所示为本发明第一实施例的第七变化实施例的触控元件层的俯视示意图；
图12所示为本发明第一实施例的第八变化实施例的触控元件层的俯视示意图；
图13所示为本发明第一实施例的第九变化实施例的触控元件层的俯视示意图；
图14所示为本发明第一实施例的第十变化实施例的触控显示设备的俯视示意图；
图15所示为沿着图14的剖线B-B’的剖视示意图；
图16所示为本发明第二实施例的触控显示设备的剖视示意图；
图17与图18所示分别为本发明第二实施例的触控显示设备的弯曲角度为90度与180度的剖视示意图；
图19所示为本发明第二实施例的一变化实施例的触控显示设备对应弯曲部的剖视示意图；
图20A、图20B与图20C所示分别为本发明第二实施例的其他变化实施例的导线的俯视示意图；
图21所示为本发明第三实施例的触控显示设备的剖视示意图；
图22所示为本发明第三实施例的触控显示设备的弯曲角度为180度的剖视示意图。
附图标记说明：100、200、300-触控显示设备；102-基板；102a-弯曲部；102b-平坦部；104、104’、104”-发光单元；106、106’-触控电极；106a-第一触控电极；106a1-第一子电极；106a2-第二子电极；106b-第二触控电极；106b1-第三子电极；106b2-第四子电极；108、108’-绝缘层；108a-第一部分；108b-第二部分；110-杯状反射结构；112-微型发光二极管；114-绝缘岛；116、116a、116b-触控引线；118-膜层；DR、DR”’-显示区；TR、TR’、TR”’-触控区；TR1、TR1’、TR1”-第一触控区；TR2、TR2’、TR2”-第二触控区；NTR1、NTR2、NTR3、NTR1’-非触控区；Z-俯视方向；D1-第一方向；D2-第二方向；E1-第一边；E2-第二边；E3-第三边；DS1-第一距离；DS2、DS2’-第二距离；DS3、DS3’-第三距离；DS4、DS4’-第四距离；DS5、DS5’-第五距离；DS6-第六距离；DS7-第七距离；DS8-第八距离；PX、PX’、PX”-像素；SPX-子像素；W、W’-导线层；W1-第一导线；W2-第二导线；W3-第三导线；ES1、ES1’-第一电极串行；ES2、ES2’-第二电极串行；ESS-电极子串行；CW-连接导线；TSRa-第一触控子区域；TSRb-第二触控子区域；TSRc-第三触控子区域；TSRd-第四触控子区域；S1-第一侧；S2-第二侧；S3-第三侧；θ1-第一夹角；θ2-第二夹角；T1-第一厚度；T2-第二厚度；R-凹陷；P-凸出部；WO、WO1、WO2、WO3-开口；Wa、Wb、Wc-导线；TW1-第一触控导线；TW2-第二触控导线。
具体实施方式
为了使本发明的内容更加清楚和易懂，下文结合具体实施例和附图对本发明的内容进行详细描述，且下文各附图中的元件仅为示意，可能并非按比例绘制，以清楚绘示本发明，其详细的比例可依照设计的需求进行调整。
可理解的是，当元件被称为在另一层或基板「上」时，它可以直接在另一元件上或还可以存在插入的元件。可理解的是，尽管在此文中使用第一、第二、第三等用语来描述不同的发光单元、电极、区域、导线、串行、边、距离和/或部分，但这些发光单元、电极、区域、导线、串行、边、距离和/或部分并不限于此。这些用语是用于区别一发光单元、电极、区域、导线、串行、边、距离和/或部分与另一发光单元、电极、区域、导线、串行、边、距离和/或部分。因此，下述第一发光单元、电极、区域、导线、串行、边、距离和/或部分可在未悖离具体实施方式的教示下称为第二发光单元、电极、区域、导线、串行、边、距离和/或部分。文中「连接」一词并不限为物理性或机械性连接，且不论直接或间接也可包括电性连接。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样定义，不会用理想化或过于正式的含义来解释。
请参阅图1与图2。图1所示为本发明第一实施例的触控显示设备的俯视示意图，图2所示为沿着图1剖线A-A’的剖视示意图。触控显示设备100包括基板102、显示元件层以及触控元件层。显示元件层用以执行显示功能，并设置于基板102上。显示元件层包括多个发光单元104，其中发光单元104可用以直接产生光线，进而可显示出影像，因此发光单元104可在垂直基板102的俯视方向Z上定义出并具有显示区DR。显示区DR与在俯视方向Z上所显示的影像实质上具有相同的尺寸。触控元件层用以执行触控感测功能，并设置于显示元件层上。触控元件层包括多个触控电极106，用以感测触摸物的触摸或接近，且触摸物可例如为手指或触控笔。由于触摸物是直接通过触控电极106侦测，因此触控电极106可在俯视方向Z上定义出并具有一触控区TR。为清楚描述，除了发光单元104与触控电极106之外，附图省略显示元件层与触控元件层中的其他元件，但本发明不限于此。
基板102还可例如包括硬质基板，如玻璃基板或石英基板，或柔性基板，如塑料基板，但不以此为限。于本实施例中，基板102用以承载形成于其上的发光单元104与触控电极106。基板102可为透明基板或不透明基板，但不以此为限。
于本实施例中，触控显示设备100还可包括绝缘层108，设置于发光单元104与触控电极106之间。绝缘层108覆盖发光单元104，用以密封发光单元104。举例而言，当各发光单元104为有机发光二极管时，绝缘层108可保护发光单元104，防止水气与氧气入侵。于本实施例中，触控电极106可直接形成于绝缘层108上，但不限于此。于一实施例中，触控显示设备100还可包括一覆盖板，设置于触控电极106上，以覆盖并保护触控电极106、绝缘层108以及发光单元104。
基板102具有一第一边E1。第一边E1与发光单元104之间具有一第一距离DS1，且第一距离DS1为在平行基板102的水平方向上从第一边E1到发光单元104的最小距离。于本实施例中，由于第一边E1垂直第一方向D1，因此水平方向可为第一方向D1，但不限于此。于另一实施例中，水平方向也可为一第二方向D2，沿着第一边E1的延伸方向。并且，第一边E1与触控电极106之间具有一第二距离DS2，第二距离DS2为在平行基板102的水平方向上从第一边E1到触控电极106的最小距离，且第一距离DS1大于第二距离DS2，也就是说，触控电极106的一部分可超过由发光单元104所定义的显示区DR的边缘，使触控区TR的边缘超出显示区DR的边缘，藉此当触摸物触摸或接近位于显示区DR边缘正上方的触控显示设备100的区域时可更精确地侦测触摸物。因此，对触控物触摸的响应可更加流畅且灵敏。此外，第一边E1与绝缘层108之间具有第三距离DS3，第三距离DS3为在平行基板102的水平方向上从第一边E1到绝缘层108的最小距离。第三距离DS3小于第二距离DS2。
于本实施例中，基板102可具有相对于第一边E1的第二边E2以及连接第一边E1的两第三边E3。第四距离DS4为在平行基板102的方向上从第二边E2到发光单元104的最小距离，第五距离DS5为在平行基板102的方向上从第二边E2到触控电极106的最小距离，且第四距离DS4大于第五距离DS5。在平行基板102的方向上，从各第三边E3到发光单元104的最小距离也可大于从各第三边E3到触控电极106的最小距离。换句话说，从基板102的任一边到由发光单元104所形成的显示区DR的最小距离可大于从基板102的此边到由触控电极106所形成的触控区TR的最小距离。因此，触控区TR的任一边会较显示区DR对应此边的一边接近基板102相对应的边，使得显示区DR在垂直基板102的俯视方向Z上设置于触控区TR中。显示区DR在俯视方向Z上具有第一面积，触控区TR在俯视方向Z上具有第二面积，且第一面积小于第二面积。因此，触控区TR大于显示区DR，藉此可减缓显示区DR边缘不灵敏或信号延迟的问题，或提升显示区DR边缘的触控灵敏度。本发明不限所有触控区TR的边均较显示区DR接近相对应基板102的边，且触控区TR的至少一边可较相对应显示区DR的边接近相对应基板102的边。
具体而言，请参考图3，所示为本发明第一实施例发光单元的俯视示意图。显示元件层可包括多个用以显示影像的像素PX。各像素PX可分别由具有不同颜色的至少三个子像素SPX所形成，例如子像素可分别具有三原色(如红色、绿色与蓝色)，且各子像素SPX中设置有至少一个显示单一原色的发光单元104，但不以此为限。于本实施例中，各发光单元104可包括一杯状反射结构110与设置于杯状反射结构110中的至少一微型发光二极管(microlight-emitting diode)112，但不以此为限。并且，各微型发光二极管112所产生的光线可被对应的杯状反射结构110反射，因此由各发光单元104所产生的发光区与各杯状反射结构110的开口约略相同。藉此，在本实施例中，各杯状反射结构110的开口可被定义为各发光单元104的发光区。举例来说，各开口可为矩形或其他形状，且杯状反射结构110可排列成矩阵形状，但不限于此。如此一来，显示区DR可通过连接最外侧的发光单元104的发光区的外端来定义出，并可形成为矩形，且显示区DR可为影像所显示的区域。举例而言，最接近第一边E1的发光单元104的最外侧可连接成一条直线，以此类推。最接近基板102的四边的发光单元104的外侧可形成四条直线，且此四条直线可构成显示区DR。本发明的显示区DR的形状并不限为矩形，且各最外侧发光区的最外端可以为尖端或边。于本实施例中，各发光单元104可包括两微型发光二极管112，设置于对应的一杯状反射结构110中，其中之一可作为主光源，另一可作为备用，但不以此为限。显示元件层还可包括阵列电路以及其他用于显示的元件，阵列电路设置于发光单元104与基板102之间，用以控制发光单元104的显示，但不以此为限。
显示元件层并不以上述实施例为限，且可具有不同的变化实施例。为简化说明，下文中各变化实施例将使用相同标号标注相同元件，且下文将突显各变化实施例与第一实施例之间的差异，并不再对重复部分作赘述。
于第一变化实施例中，如图4所示，相较于第一实施例，各发光单元104’可为有机发光二极管，且各发光单元104’的发光区与有机发光二极管的大小相同。并且，各像素PX’中的发光单元104’的排列方式以及各发光区的形状可不同于第一实施例。举例来说，各像素PX’中的发光单元104’的排列方式可为三角形状，且各发光区可为三角形或圆形，但不以此为限。于另一实施例中，各发光单元104’可包括另一种自发光单元，例如量子点材料。
于第二变化实施例中，如图5所示，各发光单元104”可为液晶显示器的一子像素，而非自发光单元。具体来说，各发光单元104”的发光区可为各子像素的开口，因此显示区DR可由最外侧像素PX”的开口的外侧定义与形成。
请参考图6，所示为本发明第一实施例触控元件层的俯视示意图。于本实施例中，触控电极106可区分为多个第一触控电极106a与多个第二触控电极106b，且触控元件层还可包括导线层W。导线层W可包括多条第一导线W1以及多条第二导线W2。各第一导线W1分别设置于排列于第一方向D1上且相邻的两个第一触控电极106a之间，并电性连接两者，使得第一触控电极106a与第一导线W1可形成多条第一电极串行ES1，且各第一电极串行ES1可分别沿着第一方向D1设置。各第二导线W2设置于排列于第二方向D2上并相邻的两第二触控电极106b之间，并电性连接两者，使得第二触控电极106b与第二导线W2可形成多条第二电极串行ES2，且各第二电极串行ES2可分别沿着第二方向D2设置。第二方向D2不同于第一方向D1，且可与第一方向D1垂直，但不以此为限。各第一电极串行ES1可在各第一导线W1与对应的第二导线W2交错处横跨各第二电极串行ES2，以使第一电极串行ES1与第二电极串行ES2可侦测触摸物的位置，且通过连接第一电极串行ES1中相邻最外侧第一触控电极106a的外端点以及连接第二电极串行ES2中最外侧第二触控电极106b的外端点可定义出并形成可侦测触摸物的触控区TR。由于触控区TR的定义类似显示区DR的定义，因此触控区TR的定义将不重复赘述。各最外侧触控电极106的外端可为端点或边。触控区TR可为矩形，但不以此为限。于本实施例中，触控电极106与第一导线W1是由同一导电层所形成，且第二导线W2由另一导电层所形成。各导电层可分别由透明导电材料所形成，透明导电材料可例如包括氧化铟锡(indium tin oxide)、透明导电高分子(conductive clear polymer)或氧化锑锡(antimony tin oxide)。导电层亦可为金属。触控显示设备100还可包括多个绝缘岛114，分别设置于彼此横跨的各第一导线W1与对应的第二导线W2之间，藉以绝缘第一电极串行ES1与第二电极串行ES2。
请继续参考图2与图6。触控元件层还可包括多条触控引线116，分别电连接至触控电极106。具体而言，触控引线116分别电连接至第一电极串行ES1与第二电极串行ES2。于本实施例中，触控引线116从绝缘层108的上表面延伸至基板102的上表面，以同时与基板102以及绝缘层108相接触。在一实施例中，绝缘层108覆盖发光单元104，绝缘层108的一部分可设置于发光单元104与触控引线116之间。并且，本实施例的触控引线116设置于触控区TR的外侧。于另一实施例中，一电极串行可在其两端连接至两触控引线116，以降低电极串行与外部控制电路之间的阻抗。
触控元件层并不以上述实施例为限，且可具有不同的变化实施例。为简化说明，下文中各变化实施例将使用相同标号标注相同元件，且下文将突显各变化实施例与第一实施例之间的差异，并不再对重复部分作赘述。
于第三变化实施例中，如图7所示，相较于第一实施例，位于触控区TR中的触控电极106与导线层W’可由单一导电层所形成。具体而言，导线层W’并不包括第二导线，使得触控区TR中的两相邻第二触控电极106b并不互相连接，但任两相邻第一触控电极106a仍可通过各第一导线W1连接，以形成第一电极串行ES1。于此变化实施例中，除了第一导线W1之外，导线层W’还可包括多条彼此分隔的第三导线W3，且各第二触控电极106b可分别通过一第三导线W3电连接至对应的一触控引线116。
于第四变化实施例中，如图8所示，相较于第一实施例，第一电极串行ES1’与第二电极串行ES2’分别由不同导电层所形成。于此变化实施例中，触控元件层还可包括一膜层118，设置于第一电极串行ES1’与第二电极串行ES2’之间，使得第一电极串行ES1’与第二电极串行ES2’可彼此绝缘。并且，连接至第一电极串行ES1’的触控引线116a与连接至第二电极串行ES2’的触控引线116b分别设置于膜层118的两侧(上下两侧)。
于第五变化实施例中，如图9所示，触控区TR’可包括一第一触控区TR1、一第二触控区TR2以及一非触控区NTR1。非触控区NTR1位于第一触控区TR1与第二触控区TR2之间。触控电极的一部分设置于第一触控区TR1中，且触控电极的另一部分设置于第二触控区TR2中。具体而言，非触控区NTR1可沿着第二方向D2延伸，并将第一触控区TR1与第二触控区TR2分隔开。第一触控电极106a可包括多个设置于第一触控区TR1中的第一子电极106a1以及多个设置于第二触控区TR2中的第二子电极106a2。第二触控电极106b可包括多个设置于第一触控区TR1中的第三子电极106b1以及多个设置于第二触控区TR2中的第四子电极106b2。由于由第二触控电极106b与第二导线W2形成的第二电极串行ES2是沿着第二方向D2设置，因此第二电极串行ES2并不横跨非触控区NTR1。由第一触控电极106a与第一导线W1所形成的第一电极串行ES1是沿着第一方向D1设置，因此会横跨非触控区NTR1。第一导线W1与第二导线W2可包括多个第一触控导线TW1，设置于第一触控区TR1；以及多个第二触控导线TW2，设置于第二触控区TR2。第一触控导线TW1连接至第一子电极106a1与第三子电极106b1(即设置于第一触控区TR1中的触控电极的一部分)，第二触控导线TW2连接至第二子电极106a2与第四子电极106b2(即设置于第二触控区TR2中的触控电极的另一部分)。导线层W还可包括多条连接导线CW，设置于非触控区NTR1中，并电连接触控电极于第一触控区TR1之一以及触控电极于第二触控区TR2之一。具体地，各连接导线CW设置于位于同一第一电极串行ES1中的第一子电极106a1与第二子电极106a2之间，以电性连接两者。于本实施例中，连接导线CW在俯视方向Z上与非触控区NTR1重迭。于另一实施例中，非触控区NTR1可沿着第一方向D1延伸，因此第二电极串行ES2可横跨非触控区NTR1。
于第六变化实施例中，如图10所示，相较于第五变化实施例，非触控区NTR1可不具有连接导线设置于其中。具体而言，各第一电极串行可分别区分为两电极子串行ESS，且两电极子串行ESS分别设置于第一触控区TR1与第二触控区TR2中。除了各第二电极串行ES2分别连接至对应的触控引线116b之外，各电极子串行ESS也可分别连接至位于触控区TR’外的对应的一触控引线116a。因此，非触控区NTR1中没有触控引线与连接导线。
于第七变化实施例中，如图11所示，相较于第五变化实施例，第一触控区TR1’与第二触控区TR2’可分别进一步区分为两分隔开的触控子区域TSRa、TSRb、TSRc、TSRd。于本变化实施例中，第一触控区TR1’可包括第一触控子区域TSRa、第二触控子区域TSRb以及另一非触控区NTR2，且非触控区NTR2将第一触控子区域TSRa与第二触控子区域TSRb区分开。第二触控区TR2’可包括第三触控子区域TSRc、第四触控子区域TSRd以及另一非触控区NTR3，且非触控区NTR3将第三触控子区域TSRa与第四触控子区域TSRb区分开。非触控区NTR2、NTR3可与非触控区NTR1连接，以形成一十字形状，但不以此为限。
于第八变化实施例中，如图12所示，相较于第五变化实施例，非触控区NTR1’的延伸方向可不垂直于触控区TR’的边。于本变化实施例中，第一触控区TR1”具有面对第二触控区TR2”的第一侧S1以及连接第一侧S1的第二侧S2，且第一侧S1与第二侧S2具有一第一夹角θ1，小于或大于90度。第一触控区TR1”还可具有相对于第二侧S2并连接第一侧S1的一第三侧S3，且第三侧S3与第一侧S1具有一第二夹角θ2，其中第二夹角θ2与第一夹角θ1互补。第一夹角θ1与第二夹角θ2的总和可为180度。
于第九变化实施例中，如图13所示，不同于第一实施例的地方在于，本变化实施例所提供的触控显示设备100的触控电极106’的一部分会从绝缘层108的上表面延伸至基板102的上表面，因此第三距离DS3’可大于第二距离DS2’。
请参考图14与图15。图14所示为本发明第一实施例的第十变化实施例的触控显示设备的俯视示意图，图15所示为沿着图14的剖线B-B’的剖视示意图。不同于第一实施例的地方在于，第四距离DS4’小于第五距离DS5’，因此显示区DR”’的一部分并未被触控区TR”’所覆盖。显示区DR”’的此部分可显示不需与用户互动的信息，例如时间信息。
触控显示设备并不以上述实施例为限，且可具有不同的实施例。为简化说明，下文中各实施例将使用相同标号标注相同元件，且下文将突显不同实施例之间的差异，并不再对重复部分作赘述。
请参考图16，所示为本发明第二实施例的触控显示设备的剖视示意图。于本实施例的触控显示设备200中，由于本实施例的触控元件层可与第一实施例的第五变化实施例的触控元件层相同，如图9所示，因此触控电极106将不重复描述。不同于第一实施例的地方在于，本实施例的基板102可为柔性，因此可具有一弯曲部102a以及至少一平坦部102b。弯曲部102a对应非触控区NTR1。具体而言，基板102具有两个由弯曲部102a区分开的平坦部102b，且发光单元104与平坦部102b以及弯曲部102a重迭。于本实施例中，绝缘层108可包括对应弯曲部102a的一第一部分108a以及分别对应平坦部102b的两个第二部分108b。第一部分108a具有一最大厚度，此最大厚度为一第一厚度T1。第二部分108b具有一最大厚度，此最大厚度为一第二厚度T2。第二厚度T2大于或等于第一厚度T1。换句话说，绝缘层108可包括一凹陷R，对应第一部分108a。连接导线CW可延伸至凹陷R中，因此当弯曲部102a弯曲时，连接导线CW并不容易断裂。于另一实施例中，上述变化实施例的发光单元104或上述变化实施例的触控电极、导线层与触控引线可应用至第二实施例的触控显示设备200中。
于本实施例中，基板102可于弯曲部102a处受到弯曲，且其弯曲角度可为约90度，如图17所示，或约180度，如图18所示。并且，当基板102受到弯曲时，发光单元104的一部分可在弯曲部102a处受到弯曲。
于第二实施例的一变化实施例，如图19所示，绝缘层108’可具有多个凸出部P，位于弯曲部102a上，且导线层W可顺应性地设置于凸出部P上。因此，导线层W可具有较佳的拉伸能力，使得在弯曲部102a受到弯曲时导线层W并不容易断裂。
于第二实施例的另一变化实施例，导线层W在俯视方向Z上可不与发光单元104重迭。具体而言，导线层W的各导线可具有多个开口WO，且各开口WO可分别对应一发光单元104，以暴露出对应的发光单元104，且不遮蔽从发光单元104射出的光线。如图20A，各导线Wa的各开口WO1的形状可为矩形。如图20B，各开口WO2的形状可为椭圆形，且椭圆形开口WO2的长轴可垂直于对应导线Wb的延伸方向。如图20C，各开口WO3的形状可为椭圆形，且各椭圆形开口WO3的长轴可平行于对应导线Wc的延伸方向。
请参考图21，所示为本发明第三实施例的触控显示设备的剖视示意图。不同于第二实施例的地方在于，本实施例所提供的触控显示设备300的发光单元104不与弯曲部102a重迭，且发光单元104可包括多个对应一平坦部102b设置的第一发光单元104a以及多个对应另一平坦部102b设置的第二发光单元104b。第一发光单元104a可对应第一触控区TR1，且第二发光单元104b可对应第二触控区TR2，因此在基板102的弯曲部102a受到弯曲时，并无发光单元被弯曲。
于本实施例中，第一发光单元104a可具有一第一显示区DR1，且第二发光单元104b可具有一第二显示区DR2。由于形成与定义第一显示区DR1与第二显示区DR2的方式可类似第一实施例的显示区的定义，因此第一显示区DR1与第二显示区DR2的定义不再重复赘述。由于弯曲部102a并没有发光单元104设置于其上，且绝缘层108是顺应性地形成于基板102与发光单元104上，因此延伸至弯曲部102a上的绝缘层108可形成一凹陷R，使得绝缘层108的一部分可设置于第一发光单元104a与第二发光单元104b之间。因此，在弯曲部102a弯曲时，延伸至凹陷R中的连接导线CW并不容易断裂。为了避免对手指在第一显示区DR1的内侧与在第二显示区DR2的内侧的触控不灵敏，在平行基板102的方向上，从第一显示区DR1的内侧至第二显示区DR2的内侧的最小距离，即第六距离DS6，可大于从第一触控区TR1的内侧至第二显示区DR2的内侧的最小距离，即第七距离DS7，其中第一显示区DR1的内侧面对第二显示区DR2的内侧。同样地，在平行基板102的方向上，从第二显示区DR2的内侧到第一显示区DR1的内侧的最小距离，即第六距离，也可大于从第二触控区TR2的内侧至第一显示区DR1的内侧的最小距离，即第八距离DS8。换句话说，第一触控区TR1可大于第一显示区DR1，和/或第二触控区TR2可大于第二显示区DR2。
请参考图22，触控显示设备300可在弯曲部102a受到弯曲，弯曲角度例如约180度。由于发光单元104并不与弯曲部102a重迭，因此，在触控显示设备100受到弯曲时，第一发光单元104a与第二发光单元104b不会弯曲。
综上所述，由于在平行基板的方向上从第一边到发光单元的最小距离大于从第一边到触控电极的最小距离，因此在显示区边缘的触控不灵敏或响应延迟可被降低，或在显示区边缘的触控灵敏度可被提升。
以上所述仅为本发明的实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (20)

1.一种触控显示设备，其特征在于，包括：
一基板，包括一第一边；
多个发光单元，设置于该基板上；以及
多个触控电极，设置于该多个发光单元上；
其中，第一距离为在平行该基板的方向上从该第一边至该多个发光单元的最小距离，第二距离为在平行该基板的方向上从该第一边至该多个触控电极的最小距离，且该第一距离大于该第二距离。
2.如权利要求1所述的触控显示设备，其特征在于，还包括一绝缘层，设置于该多个发光单元与该多个触控电极之间，其中第三距离为在平行该基板的方向上从该第一边至该绝缘层的最小距离，且该第三距离小于该第二距离。
3.如权利要求2所述的触控显示设备，其特征在于，还包括一触控引线，其中该触控引线电连接至该多个触控电极之一，且该触控引线与该基板以及该绝缘层相接触。
4.如权利要求3所述的触控显示设备，其特征在于，该绝缘层的一部分设置于该多个发光单元与该触控引线之间。
5.如权利要求2所述的触控显示设备，其特征在于，还包括一导线层，电连接至该多个触控电极，其中该绝缘层具有多个凸出部，且该导线层设置于该多个凸出部上。
6.如权利要求5所述的触控显示设备，其特征在于，该导线层在垂直该基板的方向上与该多个发光单元不重迭。
7.如权利要求1所述的触控显示设备，其特征在于，还包括一绝缘层，设置于该多个发光单元与该多个触控电极之间，其中第三距离为在平行该基板的方向上从该第一边至该绝缘层的最小距离，且该第三距离大于该第二距离。
8.如权利要求1所述的触控显示设备，其特征在于，该基板另包括一第二边，第四距离为在平行该基板的方向上从该第二边至该多个发光单元的最小距离，第五距离为在平行该基板的方向上从该第二边至该多个触控电极的最小距离，且该第四距离小于该第五距离。
9.如权利要求1所述的触控显示设备，其特征在于，该多个发光单元在垂直该基板的方向上具有一显示区，且该多个触控电极在垂直该基板的方向上具有一触控区。
10.如权利要求9所述的触控显示设备，其特征在于，该显示区在垂直该基板的方向上设置于该触控区中。
11.如权利要求9所述的触控显示设备，其特征在于，其中该显示区具有一第一面积，该触控区具有一第二面积，且该第一面积小于该第二面积。
12.如权利要求9所述的触控显示设备，其特征在于，该触控区包括一第一触控区、一第二触控区以及一非触控区，该非触控区位于该第一触控区与该第二触控区之间，该多个触控电极的一部分设置于该第一触控区中，且该多个触控电极的另一部分设置于该第二触控区中。
13.如权利要求12所述的触控显示设备，其特征在于，该非触控区将该第一触控区与该第二触控区分隔开。
14.如权利要求12所述的触控显示设备，其特征在于，该第一触控区具有一第一侧以及一第二侧，该第一侧面对该第二触控区，该第一侧与该第二侧彼此连接，且其中该第一侧与该第二侧具有一夹角，该夹角小于或大于90度。
15.如权利要求12所述的触控显示设备，其特征在于，还包括多个第一触控导线以及多个第二触控导线，该多个第一触控导线连接至该多个触控电极设置于该第一触控区中的该部分，且该多个第二触控导线连接至该多个触控电极设置于该第二触控区中的该另一部分。
16.如权利要求12所述的触控显示设备，其特征在于，还包括一连接导线，该连接导线于垂直该基板的方向上与该非触控区重迭。
17.如权利要求16所述的触控显示设备，其特征在于，该连接导线电连接该多个触控电极于该第一触控区之一以及该多个触控电极于该第二触控区之一。
18.如权利要求12所述的触控显示设备，其特征在于，该基板具有一弯曲部以及一平坦部，且该弯曲部对应该非触控区。
19.如权利要求18所述的触控显示设备，其特征在于，该绝缘层包括一第一部分以及一第二部分，该第一部分对应该弯曲部，该第二部分对应该平坦部，该第一部分具有一最大厚度，该第一部分的该最大厚度为一第一厚度，该第二部分具有一最大厚度，该第二部分的该最大厚度为一第二厚度，该第二厚度大于或等于该第一厚度。
20.如权利要求18所述的触控显示设备，其特征在于，该多个发光单元对应该平坦部。
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