CN108153442B - 触控显示设备 - Google Patents
触控显示设备 Download PDFInfo
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- CN108153442B CN108153442B CN201711006049.8A CN201711006049A CN108153442B CN 108153442 B CN108153442 B CN 108153442B CN 201711006049 A CN201711006049 A CN 201711006049A CN 108153442 B CN108153442 B CN 108153442B
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Abstract
本发明公开了一种触控显示设备,包括基板、发光单元、绝缘层和网格单元。发光单元设置于基板上。绝缘层设置于发光单元上。网格单元设置于绝缘层上。各网格单元具有网格框架和网格开口。发光单元设置在网格开口内。网格开口中的至少两个具有不同面积。
Description
技术领域
本发明涉及一种触控显示设备,特别是涉及一种包括网格单元的触控显示设备。
背景技术
近年来,触控显示技术已显著地发展而有许多整合触控显示功能的电子产品,例如移动电话、GPS导航系统、平板计算机和笔记本电脑。这些电子产品主要是将原有的显示功能和触控功能整合,以此达成触控显示。在传统的电阻式触控技术或电容式触控技术中,侦测触控信号的感测电极通常是以氧化铟锡(ITO)制备以避免显示功能被干扰。然而,由于氧化铟锡相对于导电的金属材料具有较高的电阻率,使用氧化铟锡制备的感测电极可能导致整体电阻较高以及反应速率较低等问题。因此,在现有技术中,为了提高反应速率,由金属线交织而成的金属网格可用以取代氧化铟锡。然而,使用金属网格可能遮蔽部分显示光线,从而使得触控显示设备的显示效果被金属网格影响。
发明内容
本发明的主要目的之一在于提供一触控显示设备。发光单元设置在网格单元的网格开口内,以降低网格单元对于发光单元显示表现的影响。多个网格开口中的至少两个具有不同面积。
本发明的一实施例提供触控显示设备,包括基板、多个发光单元、绝缘层以及多个网格单元。多个发光单元设置在基板上。绝缘层设置在多个发光单元上。多个网格单元设置在绝缘层上。各网格单元具有网格框架和网格开口。多个发光单元设置在网格开口内。多个网格开口中的至少两个具有不同面积。
附图说明
图1所示为本发明第一实施例的触控显示设备的示意图;
图2所示为图1沿着剖视线A-A’的剖视图;
图3所示为本发明第二实施例的触控显示设备的示意图;
图4所示为本发明第三实施例的触控显示设备的示意图;
图5所示为本发明第四实施例的触控显示设备的示意图;
图6所示为本发明第四实施例的网格单元的示意图;
图7所示为本发明第五实施例的触控显示设备的示意图。
附图标记说明:10-基板;20-发光单元;21-第一发光单元;22-第二发光单元;23-第三发光单元;30-绝缘层;40-网格单元;40A-网格框架;40B-网格开口;40G-间隔;40X-触控电极;41-第一网格单元;41A-第一网格框架;41B-第一网格开口;42-第二网格单元;42A-第二网格框架;42B-第二网格开口;50-接着层;60-覆盖基板;101、102、103、104、105-触控显示设备;RG-投影区域;RG1-第一投影区域;RG2-第二投影区域;CR1-第一转角部;CR2-第二转角部;DS-距离;E1-第一末端;E2-第二末端;L1-第一直线部;L2-第二直线部;S1-第一弧形边缘;S2-第二弧形边缘;W1-第一宽度;W2-第二宽度;W3-第三宽度;Z-方向。
具体实施方式
本发明通篇说明书与后附的权利要求中会使用某些词汇来指称特定的组成组件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的组件。本案并不意在区分那些功能相同但名称不同的组件。在下文说明书与权利要求书中,「含有」与「包括」等词为开放式词语,因此其应被解释为「含有但不限定为…」之意。
请参考图1和图2。图1所示为本发明第一实施例的触控显示设备的示意图。图2所示为图1沿着剖视线A-A’的剖视图。如图1及图2所示,本实施例提供一触控显示设备101,触控显示设备101包括多个发光单元20、绝缘层30以及多个网格单元40。多个发光单元20设置在基板10上。绝缘层30设置在多个发光单元20上。多个网格单元40设置在绝缘层30上。各网格单元40具有网格框架40A以及网格开口40B。在触控显示设备101的俯视图(例如图1)中,也就是垂直基板10的方向上,多个发光单元20设置在网格开口40B内。
在一些实施例中,基板10可包括玻璃基板、塑料基板、陶瓷基板、金属箔或其他合适的硬式或软式基板。发光单元20可包括有机发光二极管单元(OLED)、无机发光二极管单元(LED)(例如micro-LED,尺寸范围介于0.1微米至100微米;或是mini-LED,尺寸范围介于100微米至300微米)、有机与无机混合的发光单元(例如QD-LED,量子井层包括量子点材料)或其他适合的发光结构种类。图1中的发光单元20的轮廓(outline)为有效发光面积,其中有效发光面积由有效二极管结构所定义。其中,有效二极管结构为层状堆栈,且依序为阴极、发光层和阳极的迭层结构。另外,基板10可包括具有多个薄膜晶体管,或是具有适合驱动发光组件20的电路。如上所述的电路中的薄膜晶体管可包括非晶硅薄膜晶体管(a-SiTFTs)、多晶硅薄膜晶体管(poly-Si TFTs)、氧化物半导体薄膜晶体管(例如IGZO TFTs)或是其他薄膜晶体管。在一些实施例中,绝缘层30可为形成在基板10上且覆盖发光单元20的封装层,但不以此为限。在一些实施例中,绝缘层30还可包括形成于发光单元20以及覆盖发光单元20的封装层之间的平坦化层。换句话说,绝缘层30可为单层结构或多层结构。绝缘层30的材料可包括氧化硅、氮化硅、氮氧化硅、金属氧化物、高分子、树脂或其他适合的有机材料和无机材料。在一些实施例中,网格单元40可包括金属网格,且金属网格的材料可包括铝、铜、钼、钛、银、上述材料的复合层或上述材料的合金,但不以此为限。在一些实施例中,网格单元40还可由合适的导电材料例如导电氧化物材料制备。
如图1及图2所示,网格单元40的网格框架40A可以和邻近的至少一网格单元40的网格框架40A连接并形成网格形状。换句话说,网格单元40的边缘(如虚线所示)设置于两邻近的网格开口40B之间,且网格单元40的边缘在网格分枝上(连接网格形状的电极在线)。在一些实施例中,触控电极40X可由至少一网格单元40所形成。换句话说,触控显示设备101可包括至少一触控电极40X,且该触控电极40X由至少一网格单元40所形成,但不以此为限。触控电极40X可用作电容式触控感测操作、电阻式触控感测操作或其他合适的触控感测操作。在一些实施例中,网格单元40可形成并作为触控电极之间的连结部分和触控电极连结且延伸至周边区的走线,或触控感测结构中其他合适的部分。
如图1及图2所示,各网格开口40B在垂直基板10的方向Z上具有投影区域RG,且发光单元20可设置在投影区域RG内。换句话说,网格单元40在垂直基板10的方向Z上不和发光单元20相重迭,以此降低网格单元40对于发光单元20的显示表现的影响,并且触控显示设备101的显示质量可因此提升。发光单元20和对应的网格框架40A之间的距离范围在触控显示设备101的俯视图中可介于1微米至10微米之间,用以确保在方向Z上由发光单元20所发射出的光线不会被网格单元40遮蔽。在一些实施例中,各发光单元20可分别设置在网格开口40B的投影区域RG其中之一内。换句话说,各投影区域RG可仅对应一个发光单元20而形成,但不以此为限。在一些实施例中,投影区域RG的其中至少之一可对应多个发光单元20而形成。
另外,发光单元20可包括用以发出不同颜色光线的发光单元20。例如,发光单元20可包括第一发光单元21、第二发光单元22和第三发光单元23用以分别发出红光、绿光和蓝光,但不以此为限。在一些实施例中,至少两个发光单元20具有不同的面积,且所述的面积定义为发光单元20轮廓内的面积。例如,为了达到特定的混合色光,第三发光单元23的面积可小于第一发光单元21的面积和第二发光单元22的面积,但不以此为限。同样地,至少两个网格开口40B具有不同面积。明确地说,在一些实施例中,触控电极40X可包括多个第一网格单元41和多个第二网格单元42。各第一网格单元41可具有第一网格框架41A和第一网格开口41B,且各第二网格单元42可具有第二网格框架42A和第二网格开口42B。第一发光单元21和第二发光单元22可分别设置在第一网格开口41B内,且第三发光单元23可设置在第二网格开口42B内。换句话说,第一发光单元21可设置在第一网格开口41B的第一投影区域RG1内,第二发光单元22可设置在另一第一网格开口41B的第一投影区域RG1内,且第三发光单元23可设置在第二网格开口42B的第二投影区域RG2内。当第三发光单元23的面积小于第一发光单元21的面积和第二发光单元22的面积,第二网格开口42B可小于第一网格开口41B,且第二投影区域RG2可小于第一投影区域RG1,但不以此为限。在一些实施例中,第一发光单元21可设置在第一网格开口41B内,第二发光单元22可设置在第二网格开口42B内,且第三发光单元23可设置在第三网格开口,第三发光单元23的面积小于第二发光单元22的面积,第二发光单元22的面积小于第一发光单元21的面积,第三网格开口可小于第二网格开口42B,第二网格开口42B可小于第一网格开口41A。在一些实施例中,网格开口40B的面积也可以因应设计的需求而彼此相同。
如图1及图2所示,触控显示设备101可包括覆盖基板60和接着层50。接着层50可设置在覆盖基板60和设置有发光单元20以及网格单元40在其上的基板10之间,用以连结基板10和覆盖基板60。因此,网格单元40设置在覆盖基板60和绝缘层30之间。在一些实施例中,触控显示设备101还可包括偏光镜和/或四分之一波片(图未示)。其中,偏光镜和/或四分之一波片设置在覆盖基板60和发光单元20之间或设置在覆盖基板60之上,以降低触控显示设备101所反射的环境光的影响,但不以此为限。
下文将继续说明本发明的其它实施例,为了简化说明并突显各实施例或变化形之间的差异,下文中使用相同标号标注相同组件,并不再对重复部分作赘述。
请参考图3。图3所示为本发明第二实施例的触控显示设备102的示意图。如图3所示,在触控显示设备102中,至少两发光单元20设置于网格开口40B的其中之一内。换句话说,至少两个发光单元20设置于网格开口40B的一个投影区域RG内。例如,各投影区域RG可以对应于两个发光单元20而形成,但不以此为限。在一些实施例中,同一个网格开口40B中可以设置两个以上的发光单元40B。此外,设置于同一个投影区域RG内的发光单元20可用以发出相同颜色的光线,但不以此为限。例如,两个第一发光单元21可设置在同一个第一投影区域RG1内,两个第二发光单元22可设置在同一个第一投影区域RG1内,且两个第三发光单元23可设置在同一个第二投影区域RG2内。
请参考图4。图4所示为本发明第三实施例的触控显示设备103的示意图。如图4所示,在触控显示设备103中,至少两个发光单元20设置在网格开口40B的其中之一。换句话说,至少两发光单元20设置于网格开口40B的投影区域RG的其中之一内。此外,分别设置于至少两个投影区域RG内的发光单元20的数量彼此不相同。例如,各第二网格开口40B内可仅设置一个发光单元20,且各第一网格开口41B内可设置两个发光单元20。此外,设置于同一个投影区域RG内的发光单元20可用以发出不同颜色的光线。例如,一个第一发光单元21和一个第三发光单元23可设置于同一个第一投影区域RG1内,且一个第二发光单元22和一个第三发光单元23可设置于同一个第一投影区域RG1内,但不以此为限。
请参考图5及图6。图5所示为本发明第四实施例的触控显示设备104的示意图。图6所示为本实施例的网格单元的示意图。如图5和图6所示,在触控显示设备104中,至少一网格框架40A包括第一末端E1以及相反于第一末端E1的第二末端E2,且间隔40G为第一末端E1和第二末端E2之间的最短距离。其中,间隔40G可用以分隔两邻近的触控电极40X,且触控电极40X由网格单元40所构成,但不以此为限。因此,第一末端E1可和第二末端E2彼此电性绝缘,但不以此为限。在一些实施例中,网格单元40的其中之一可仅设置有一个间隔40G,且第一末端E1可仍电性连接第二末端E2。此外,网格框架40A还可包括第一转角部CR1、第二转角部CR2、第一直线部L1和第二直线部L2。第一直线部L1设置在第一末端E1和第一转角部CR1之间。第二直线部L2设置在第二线末端E2和第二转角部CR2之间。第一直线部L1和第二直线部L2的形状为矩形。至少一部分的第一末端E1、第二末端E2、第一转角部CR1和第二转角部CR2包括弧形。第一转角部CR1相邻于第二转角部CR2,且间隔40G设置于第一转角部CR1和第二转角部CR2之间。第一直线部L1在垂直于第一直线部L1的延伸方向上可具有第一宽度W1且第二直线部L2在垂直于第二直线部L2的延伸方向上可具有第二宽度W2。第一宽度W1和第二宽度W2可小于或等于间隔40G的宽度,例如图6所示的第三宽度W3。此外,间隔40G的宽度可小于第一转角部CR1和第二转角部CR2之间的距离DS,以此降低间隔40G对于视觉的影响。距离DS定义为第一转角部CR1和第二转角部CR2之间的最小距离。在一些实施例中,第一末端E1可具有第一弧形边缘S1,且第二末端E2有第二弧形边缘S2,但不限于此。
请参考图7。图7所示为本发明第五实施例的触控显示设备105的示意图。如图7所示,在图7显示设备105中,网格单元40的其中之一可仅设置有一个间隔40G,且第一末端E1仍电性连接第二末端E2。图7所示的网格单元40可为触控感测结构中的虚置网格单元(dummy mesh unit),且间隔40G的形成可用以改善网格单元40的视觉均匀性,但不限于此。
综上所述,在本发明提供的触控显示设备中,发光单元设置在网格单元中的网格开口内以避免在垂直于基板的方向上发光单元所发出的光线被网格单元所遮蔽。触控显示设备的发光强度可因此提升,且触控显示设备的显示质量也可因此改善。
以上所述仅为本发明的实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (18)
1.一种触控显示设备,其特征在于,包括:
一基板;
多个发光单元,设置于该基板上,该多个发光单元包括一第一发光单元与一第二发光单元;
一绝缘层,设置于该多个发光单元上;以及
多个网格单元,设置于该绝缘层上,且各该网格单元具有一网格框架及一网格开口,且该多个网格单元包括具有一第一网格开口的一第一网格单元与具有一第二网格开口的一第二网格单元,其中各该发光单元于垂直该基板的方向上设置在各该网格开口内,该第一发光单元设置在该第一网格开口内,该第二发光单元设置在该第二网格开口内,该第一发光单元的面积大于该第二发光单元的面积,且该第一网格开口的面积大于该第二网格开口的面积。
2.根据权利要求1所述的触控显示设备,其特征在于,至少一个网格框架包括一第一末端以及相对于该第一末端的一第二末端,且该第一末端和该第二末端之间具有一间隔。
3.根据权利要求2所述的触控显示设备,其特征在于,至少一个网格框架还包括一第一转角部和一第二转角部,该第一转角部和该第二转角部相邻,且该间隔设置于该第一转角部和该第二转角部之间。
4.根据权利要求3所述的触控显示设备,其特征在于,至少一个网格框架还包括一第一直线部,该第一直线部设置在该第一转角部和该第二转角部之间,该第一直线部具有一第一宽度,且该第一宽度小于该间隔的宽度。
5.根据权利要求2所述的触控显示设备,其特征在于,该第一末端具有一第一弧形边缘,且该第二末端具有一第二弧形边缘。
6.根据权利要求2所述的触控显示设备,其特征在于,该第一末端电性连接该第二末端。
7.根据权利要求2所述的触控显示设备,其特征在于,该第一末端和该第二末端彼此电性绝缘。
8.根据权利要求1所述的触控显示设备,其特征在于,于垂直该基板的该方向上,该多个发光单元不和该多个网格开口重迭。
9.根据权利要求8所述的触控显示设备,其特征在于,各该发光单元分别设置于该多个网格开口其中之一内。
10.根据权利要求8所述的触控显示设备,其特征在于,该多个发光单元设置于该多个网格开口其中之一内。
11.根据权利要求10所述的触控显示设备,其特征在于,设置于相同的网格开口内的该多个发光单元发出相同颜色的光线。
12.根据权利要求10所述的触控显示设备,其特征在于,该第一发光单元与该第二发光单元分别发出不同颜色的光线。
13.根据权利要求1所述的触控显示设备,其特征在于,该多个发光单元还包括一第三发光单元,且该第三发光单元的面积不同于该第一发光单元的该面积与该第二发光单元的该面积。
14.根据权利要求1所述的触控显示设备,其特征在于,该多个发光单元包括有机发光单元、无机发光单元或有机与无机混合的发光单元。
15.根据权利要求1所述的触控显示设备,其特征在于,该绝缘层覆盖该多个发光单元。
16.根据权利要求1所述的触控显示设备,其特征在于,至少部分该多个网格单元构成一触控电极。
17.根据权利要求1所述的触控显示设备,其特征在于,该多个网格单元包括金属网格单元。
18.根据权利要求1所述的触控显示设备,其特征在于,还包括:
一覆盖基板,其中该多个网格单元设置于该覆盖基板和该绝缘层之间。
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Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018013567A (ja) * | 2016-07-20 | 2018-01-25 | 株式会社ジャパンディスプレイ | 表示装置 |
US10825839B2 (en) | 2016-12-02 | 2020-11-03 | Innolux Corporation | Touch display device |
WO2018111247A1 (en) | 2016-12-13 | 2018-06-21 | Intel Corporation | Passivation dielectrics for oxide semiconductor thin film transistors |
KR102349337B1 (ko) * | 2017-07-31 | 2022-01-10 | 삼성디스플레이 주식회사 | 표시 장치 |
JP6959065B2 (ja) * | 2017-08-14 | 2021-11-02 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102419557B1 (ko) | 2017-08-28 | 2022-07-08 | 엘지디스플레이 주식회사 | 터치 스크린 패널 및 이를 포함하는 표시 장치 |
KR102494625B1 (ko) * | 2017-08-28 | 2023-02-01 | 삼성디스플레이 주식회사 | 표시 장치 |
CN108054286B (zh) * | 2017-12-13 | 2020-03-06 | 合肥鑫晟光电科技有限公司 | 一种电致发光器件、显示装置及其制作方法 |
JP6887714B2 (ja) * | 2018-01-15 | 2021-06-16 | エルジー・ケム・リミテッド | 透明発光素子ディスプレイ |
US11362215B2 (en) * | 2018-03-30 | 2022-06-14 | Intel Corporation | Top-gate doped thin film transistor |
US11257956B2 (en) | 2018-03-30 | 2022-02-22 | Intel Corporation | Thin film transistor with selectively doped oxide thin film |
JP7398860B2 (ja) * | 2018-08-08 | 2023-12-15 | 株式会社ジャパンディスプレイ | 薄膜トランジスタの製造方法 |
CN208622722U (zh) * | 2018-08-30 | 2019-03-19 | 京东方科技集团股份有限公司 | 静电放电保护电路及显示装置 |
KR102650309B1 (ko) * | 2018-09-19 | 2024-03-22 | 삼성디스플레이 주식회사 | 터치 감지 유닛 및 이를 포함하는 표시장치 |
CN111221429A (zh) * | 2018-11-26 | 2020-06-02 | 南昌欧菲显示科技有限公司 | 触控模组、触控屏及其制备方法 |
US11061499B2 (en) * | 2018-12-12 | 2021-07-13 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel |
CN109614007B (zh) * | 2018-12-12 | 2020-08-11 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
CN109920800A (zh) * | 2019-02-28 | 2019-06-21 | 武汉华星光电半导体显示技术有限公司 | 一种显示装置及其制作方法 |
CN116864510A (zh) * | 2019-03-19 | 2023-10-10 | 群创光电股份有限公司 | 具有晶体管元件的工作模块 |
US11616057B2 (en) | 2019-03-27 | 2023-03-28 | Intel Corporation | IC including back-end-of-line (BEOL) transistors with crystalline channel material |
CN110148592B (zh) * | 2019-05-21 | 2020-12-11 | 上海天马有机发光显示技术有限公司 | 一种显示面板、包含其的显示装置 |
KR20210007062A (ko) | 2019-07-09 | 2021-01-20 | 삼성디스플레이 주식회사 | 터치 유닛과 그를 포함하는 표시 장치 |
CN112306273A (zh) * | 2019-07-26 | 2021-02-02 | 北京小米移动软件有限公司 | 触控显示屏和移动终端 |
KR20210056669A (ko) * | 2019-11-11 | 2021-05-20 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR20210078649A (ko) | 2019-12-18 | 2021-06-29 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 구비하는 표시 장치 |
KR20210082316A (ko) | 2019-12-24 | 2021-07-05 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 구비하는 표시 장치 |
US11393881B2 (en) | 2020-03-26 | 2022-07-19 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display device and manufacturing method thereof |
KR20210132497A (ko) * | 2020-04-27 | 2021-11-04 | 삼성전자주식회사 | 센서를 포함하는 전자 장치 |
CN113721780A (zh) * | 2020-05-26 | 2021-11-30 | 瀚宇彩晶股份有限公司 | 触控显示面板 |
CN112965305B (zh) * | 2020-07-08 | 2023-11-17 | 友达光电股份有限公司 | 显示面板 |
US20220045061A1 (en) * | 2020-08-06 | 2022-02-10 | Micron Technology, Inc. | Three-node access device for vertical three dimensional (3d) memory |
CN114063354A (zh) * | 2020-08-07 | 2022-02-18 | 京东方科技集团股份有限公司 | 显示面板、显示设备和制造显示面板的方法 |
KR20220022512A (ko) | 2020-08-18 | 2022-02-28 | 삼성디스플레이 주식회사 | 전자 장치 |
KR20220067659A (ko) * | 2020-11-17 | 2022-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
WO2022217569A1 (zh) * | 2021-04-16 | 2022-10-20 | 京东方科技集团股份有限公司 | 触控基板及其制造方法、触控装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN204087146U (zh) * | 2014-05-23 | 2015-01-07 | 胜华科技股份有限公司 | 触控面板 |
CN104571687A (zh) * | 2013-10-17 | 2015-04-29 | Lg伊诺特有限公司 | 触摸窗及包括触摸窗的触摸装置 |
CN105138195A (zh) * | 2014-05-30 | 2015-12-09 | 株式会社半导体能源研究所 | 触摸面板 |
Family Cites Families (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327531C (zh) * | 2003-05-19 | 2007-07-18 | 友达光电股份有限公司 | 低温多晶硅薄膜晶体管的结构 |
US7286120B2 (en) * | 2003-11-12 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Large area display and method of manufacturing same |
WO2006114747A2 (en) * | 2005-04-28 | 2006-11-02 | Nxp B.V. | Fet device |
JP2007059128A (ja) * | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
KR101186292B1 (ko) * | 2006-01-10 | 2012-09-27 | 삼성전자주식회사 | 트랜지스터와 트랜지스터의 제조방법 및 이를 적용하는유기발광 디스플레이 및 그 제조방법 |
EP2040243B1 (en) * | 2006-06-19 | 2018-04-04 | Sharp Kabushiki Kaisha | Display apparatus |
US20080001525A1 (en) * | 2006-06-30 | 2008-01-03 | Au Optronics Corporation | Arrangements of color pixels for full color OLED |
JP4974803B2 (ja) * | 2007-08-03 | 2012-07-11 | タツタ電線株式会社 | プリント配線板用シールドフィルム及びプリント配線板 |
CN101393924B (zh) * | 2007-09-21 | 2015-08-12 | 北京京东方光电科技有限公司 | 电致发光显示面板 |
CN101414229B (zh) * | 2007-10-19 | 2010-09-08 | 集嘉通讯股份有限公司 | 手持电子装置触控荧幕执行切换功能的控制方法及其装置 |
TWI360708B (en) * | 2007-12-17 | 2012-03-21 | Au Optronics Corp | Pixel structure, display panel, elecro-optical app |
JP2009276744A (ja) * | 2008-02-13 | 2009-11-26 | Toshiba Mobile Display Co Ltd | El表示装置 |
US8017045B2 (en) * | 2008-04-16 | 2011-09-13 | Electronics And Telecommunications Research Institute | Composition for oxide semiconductor thin film and field effect transistor using the composition |
CN101315593B (zh) * | 2008-07-18 | 2010-06-16 | 华硕电脑股份有限公司 | 触控式移动运算装置与应用于其上的触控方法 |
CN100573261C (zh) * | 2008-07-24 | 2009-12-23 | 京东方科技集团股份有限公司 | 彩膜基板及其制造方法 |
KR101634791B1 (ko) * | 2008-11-28 | 2016-06-30 | 삼성디스플레이 주식회사 | 접촉 감지 기능이 있는 유기 발광 표시 장치 |
KR101100999B1 (ko) * | 2009-01-13 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 씨모스 박막트랜지스터 및 그 제조방법과 이를 구비한 유기전계발광 표시장치 |
TWI589042B (zh) * | 2010-01-20 | 2017-06-21 | 半導體能源研究所股份有限公司 | 發光裝置,撓性發光裝置,電子裝置,照明設備,以及發光裝置和撓性發光裝置的製造方法 |
TWI443829B (zh) * | 2010-04-16 | 2014-07-01 | Ind Tech Res Inst | 電晶體及其製造方法 |
JP5638833B2 (ja) * | 2010-04-22 | 2014-12-10 | 株式会社ジャパンディスプレイ | 画像表示装置及びその製造方法 |
KR101182231B1 (ko) * | 2010-06-04 | 2012-09-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP2012256819A (ja) * | 2010-09-08 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
TW201219944A (en) * | 2010-11-10 | 2012-05-16 | Chunghwa Picture Tubes Ltd | Transistor array substrate |
US9048142B2 (en) * | 2010-12-28 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN102655161A (zh) * | 2011-05-03 | 2012-09-05 | 京东方科技集团股份有限公司 | 一种像素结构及其制造方法、显示装置 |
JP6013685B2 (ja) * | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN202217245U (zh) * | 2011-08-17 | 2012-05-09 | 宸鸿科技(厦门)有限公司 | 触控面板 |
JP5855888B2 (ja) * | 2011-09-30 | 2016-02-09 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP2013125826A (ja) * | 2011-12-14 | 2013-06-24 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
US10002968B2 (en) * | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
CN102437196B (zh) * | 2011-12-15 | 2013-04-03 | 昆山工研院新型平板显示技术中心有限公司 | 低温多晶硅薄膜晶体管的制造方法 |
US9048323B2 (en) * | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI523180B (zh) * | 2012-05-07 | 2016-02-21 | 友達光電股份有限公司 | 觸控面板、觸控顯示面板以及觸控顯示裝置 |
US8901557B2 (en) * | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101944503B1 (ko) * | 2012-06-21 | 2019-04-18 | 삼성디스플레이 주식회사 | 센서 기판 및 이를 포함하는 센싱 표시 패널 |
CN102751200B (zh) * | 2012-06-29 | 2015-06-10 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法 |
US9329314B2 (en) * | 2012-07-13 | 2016-05-03 | Apple Inc. | Touch screen display with transparent electrical shielding layer |
CN103729077A (zh) * | 2012-10-10 | 2014-04-16 | 东莞万士达液晶显示器有限公司 | 触控显示装置以及触控板 |
TWI498220B (zh) * | 2012-10-31 | 2015-09-01 | Au Optronics Corp | 顯示面板及其製造方法 |
JP5840598B2 (ja) * | 2012-12-17 | 2016-01-06 | 株式会社ジャパンディスプレイ | タッチ検出機能付き表示装置、電子機器及びタッチ検出機能付き表示装置の製造方法 |
KR102109166B1 (ko) * | 2013-01-15 | 2020-05-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비하는 표시 기판 |
CN103123927B (zh) * | 2013-01-24 | 2015-05-06 | 昆山维信诺显示技术有限公司 | 用于oled显示屏的像素结构及其金属掩膜板 |
US9052766B2 (en) * | 2013-02-14 | 2015-06-09 | Synaptics Incorporated | Mesh sensor design for reduced visibility in touch screen devices |
US20140333555A1 (en) * | 2013-05-10 | 2014-11-13 | Samsung Electro-Mechanics Co., Ltd. | Touch sensor and electronic device having the same |
CN103336383B (zh) * | 2013-07-05 | 2016-08-10 | 南昌欧菲光显示技术有限公司 | 偏光-滤光模块及触摸显示屏 |
US9818765B2 (en) * | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
KR102142855B1 (ko) * | 2013-08-29 | 2020-08-31 | 미래나노텍(주) | 터치스크린 패널용 배선 전극, 이를 이용한 터치스크린 패널 및 그 제조방법 |
KR20150031917A (ko) * | 2013-09-17 | 2015-03-25 | 엘지이노텍 주식회사 | 전극 플레이트와 이를 이용하는 전기변색 플레이트, 전기변색 미러 및 디스플레이 장치 |
US9231032B2 (en) * | 2013-12-24 | 2016-01-05 | Lg Display Co., Ltd. | Organic electroluminescent device and method of fabricating the same |
TW201530400A (zh) * | 2014-01-22 | 2015-08-01 | Wintek Corp | 觸控裝置 |
US9887253B2 (en) * | 2014-01-27 | 2018-02-06 | Japan Display Inc. | Light emitting element display device |
KR102313990B1 (ko) * | 2014-01-29 | 2021-10-18 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 |
US10985196B2 (en) * | 2014-02-24 | 2021-04-20 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
US20150309600A1 (en) * | 2014-04-23 | 2015-10-29 | Uni-Pixel Displays, Inc. | Method of fabricating a conductive pattern with high optical transmission, low reflectance, and low visibility |
US9336709B2 (en) * | 2014-04-25 | 2016-05-10 | Apple Inc. | Displays with overlapping light-emitting diodes and gate drivers |
US20170125452A1 (en) * | 2014-06-17 | 2017-05-04 | Sharp Kabushiki Kaisha | Semiconductor device |
TW201602854A (zh) * | 2014-07-08 | 2016-01-16 | 勝華科技股份有限公司 | 觸控面板 |
KR102238180B1 (ko) * | 2014-08-05 | 2021-04-08 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그 제조방법 |
KR102202976B1 (ko) * | 2014-09-19 | 2021-01-14 | 동우 화인켐 주식회사 | 터치 센서 패널 및 그의 제조 방법 |
KR102221910B1 (ko) * | 2014-10-10 | 2021-03-05 | 삼성디스플레이 주식회사 | 표시장치 및 그 제조방법 |
CN204065625U (zh) * | 2014-10-10 | 2014-12-31 | 京东方科技集团股份有限公司 | 一种阵列基板及液晶显示装置 |
KR102256461B1 (ko) | 2014-10-10 | 2021-05-26 | 삼성디스플레이 주식회사 | 터치 센서 및 이를 포함하는 표시 장치 |
KR102250847B1 (ko) * | 2014-11-13 | 2021-05-13 | 삼성디스플레이 주식회사 | 터치 스크린 패널 일체형 표시장치 |
KR102287368B1 (ko) | 2015-01-07 | 2021-08-06 | 삼성디스플레이 주식회사 | 터치 패널 |
CN105824160B (zh) * | 2015-01-08 | 2020-06-16 | 群创光电股份有限公司 | 显示面板 |
KR102288825B1 (ko) * | 2015-01-13 | 2021-08-11 | 엘지이노텍 주식회사 | 터치 윈도우 |
US10522693B2 (en) * | 2015-01-16 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
KR102264651B1 (ko) * | 2015-02-03 | 2021-06-15 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102381659B1 (ko) | 2015-03-10 | 2022-04-04 | 삼성디스플레이 주식회사 | 플렉서블 표시장치 |
US9685469B2 (en) * | 2015-04-03 | 2017-06-20 | Apple Inc. | Display with semiconducting oxide and polysilicon transistors |
KR102339300B1 (ko) | 2015-04-06 | 2021-12-15 | 삼성디스플레이 주식회사 | 플렉서블 터치 스크린 패널 및 플렉서블 터치 스크린 표시장치 |
KR102296737B1 (ko) * | 2015-04-14 | 2021-09-01 | 삼성디스플레이 주식회사 | 터치 패널 및 표시 장치 |
KR102362189B1 (ko) * | 2015-04-16 | 2022-02-11 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2016178498A1 (en) * | 2015-05-04 | 2016-11-10 | Lg Innotek Co., Ltd. | Touch panel |
US9912897B2 (en) * | 2015-05-11 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
JP6562706B2 (ja) * | 2015-05-13 | 2019-08-21 | 三菱電機株式会社 | 面デバイス、タッチスクリーン及び液晶表示装置 |
CN105159485B (zh) * | 2015-06-18 | 2018-06-05 | 京东方科技集团股份有限公司 | 触控面板及其制备方法、显示装置 |
TWI599834B (zh) * | 2015-07-31 | 2017-09-21 | 友達光電股份有限公司 | 畫素結構及其製造方法 |
CN105304023A (zh) * | 2015-11-18 | 2016-02-03 | 上海大学 | 硅基有机发光微显示器像素衰退补偿电路 |
CN106020581B (zh) * | 2016-05-25 | 2018-12-18 | 厦门天马微电子有限公司 | 阵列基板及触控显示面板 |
KR102382042B1 (ko) * | 2016-06-21 | 2022-04-04 | 삼성디스플레이 주식회사 | 터치 센싱 유닛 및 이를 포함하는 전자 장치 |
KR101904969B1 (ko) * | 2016-07-29 | 2018-10-10 | 삼성디스플레이 주식회사 | 표시장치 |
KR102541552B1 (ko) * | 2016-11-30 | 2023-06-07 | 엘지디스플레이 주식회사 | 트랜지스터 기판 및 이를 이용한 유기발광표시패널과 유기발광표시장치 |
US10825839B2 (en) | 2016-12-02 | 2020-11-03 | Innolux Corporation | Touch display device |
CN107452757B (zh) * | 2017-07-31 | 2019-10-22 | 上海天马微电子有限公司 | 一种显示面板、其制作方法及显示装置 |
-
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- 2017-03-03 US US15/448,592 patent/US10825839B2/en active Active
- 2017-03-07 US US15/451,416 patent/US10522566B2/en active Active
- 2017-04-06 US US15/480,423 patent/US10074669B2/en active Active
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- 2017-10-25 CN CN202110418521.9A patent/CN112905062A/zh active Pending
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- 2017-10-25 CN CN201711006061.9A patent/CN108153443B/zh active Active
- 2017-11-24 CN CN201711192163.4A patent/CN108155194B/zh active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104571687A (zh) * | 2013-10-17 | 2015-04-29 | Lg伊诺特有限公司 | 触摸窗及包括触摸窗的触摸装置 |
CN204087146U (zh) * | 2014-05-23 | 2015-01-07 | 胜华科技股份有限公司 | 触控面板 |
CN105138195A (zh) * | 2014-05-30 | 2015-12-09 | 株式会社半导体能源研究所 | 触摸面板 |
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