CN108091573B - 屏蔽栅沟槽mosfet esd结构的制造方法 - Google Patents
屏蔽栅沟槽mosfet esd结构的制造方法 Download PDFInfo
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- CN108091573B CN108091573B CN201711383776.6A CN201711383776A CN108091573B CN 108091573 B CN108091573 B CN 108091573B CN 201711383776 A CN201711383776 A CN 201711383776A CN 108091573 B CN108091573 B CN 108091573B
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- polysilicon
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 73
- 229920005591 polysilicon Polymers 0.000 claims abstract description 66
- 238000001259 photo etching Methods 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Abstract
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CN201711383776.6A CN108091573B (zh) | 2017-12-20 | 2017-12-20 | 屏蔽栅沟槽mosfet esd结构的制造方法 |
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CN201711383776.6A CN108091573B (zh) | 2017-12-20 | 2017-12-20 | 屏蔽栅沟槽mosfet esd结构的制造方法 |
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CN108091573A CN108091573A (zh) | 2018-05-29 |
CN108091573B true CN108091573B (zh) | 2020-12-18 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11018127B2 (en) * | 2019-10-02 | 2021-05-25 | Nami Mos Co, Ltd. | Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process |
CN110911495B (zh) * | 2019-10-30 | 2020-11-06 | 珠海迈巨微电子有限责任公司 | 集成esd防护的沟槽vdmos器件及制造方法 |
CN111490094B (zh) * | 2020-04-20 | 2022-08-02 | 中国电子科技集团公司第五十八研究所 | 一种带ESD保护结构的trench分离栅DMOS器件制作方法 |
CN113471078A (zh) * | 2021-06-11 | 2021-10-01 | 上海格瑞宝电子有限公司 | 一种sgt-mosfet及其制造方法 |
CN113471279B (zh) * | 2021-06-29 | 2022-06-28 | 无锡新洁能股份有限公司 | 降低导通电阻的功率晶体管结构 |
CN116779666B (zh) * | 2023-08-22 | 2024-03-26 | 深圳芯能半导体技术有限公司 | 一种带esd结构的igbt芯片及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105551963A (zh) * | 2015-12-25 | 2016-05-04 | 西安龙腾新能源科技发展有限公司 | 低压超结mosfet的制造方法 |
CN106920752A (zh) * | 2017-03-15 | 2017-07-04 | 西安龙腾新能源科技发展有限公司 | 低压超结mosfet栅源氧化层结构及制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US8080459B2 (en) * | 2002-09-24 | 2011-12-20 | Vishay-Siliconix | Self aligned contact in a semiconductor device and method of fabricating the same |
US8097916B2 (en) * | 2007-07-23 | 2012-01-17 | Infineon Technologies Austria Ag | Method for insulating a semiconducting material in a trench from a substrate |
US7585705B2 (en) * | 2007-11-29 | 2009-09-08 | Alpha & Omega Semiconductor, Inc. | Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop |
CN104347422B (zh) * | 2013-08-09 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | 带静电释放保护电路的沟槽式mos晶体管的制造方法 |
CN105470309A (zh) * | 2016-01-06 | 2016-04-06 | 无锡新洁能股份有限公司 | 具有防静电保护结构的低压mosfet器件及其制造方法 |
CN105655402B (zh) * | 2016-03-31 | 2019-11-19 | 西安龙腾新能源科技发展有限公司 | 低压超结mosfet终端结构及其制造方法 |
CN106206322B (zh) * | 2016-08-30 | 2019-06-21 | 西安龙腾新能源科技发展有限公司 | 自对准低压超结mosfet的制造方法 |
CN106298940A (zh) * | 2016-08-30 | 2017-01-04 | 西安龙腾新能源科技发展有限公司 | Vdmos集成esd结构的制备方法 |
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- 2017-12-20 CN CN201711383776.6A patent/CN108091573B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105551963A (zh) * | 2015-12-25 | 2016-05-04 | 西安龙腾新能源科技发展有限公司 | 低压超结mosfet的制造方法 |
CN106920752A (zh) * | 2017-03-15 | 2017-07-04 | 西安龙腾新能源科技发展有限公司 | 低压超结mosfet栅源氧化层结构及制造方法 |
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Address after: 710021 export processing zone, No.1, Fengcheng 12th Road, Xi'an City, Shaanxi Province Patentee after: Longteng Semiconductor Co.,Ltd. Address before: 710021 export processing zone, No.1, Fengcheng 12th Road, Xi'an City, Shaanxi Province Patentee before: LONTEN SEMICONDUCTOR Co.,Ltd. Address after: 710021 export processing zone, No.1, Fengcheng 12th Road, Xi'an City, Shaanxi Province Patentee after: LONTEN SEMICONDUCTOR Co.,Ltd. Address before: 710021 export processing zone, No.1, Fengcheng 12th Road, Xi'an City, Shaanxi Province Patentee before: XI'AN LONTEN RENEWABLE ENERGY TECHNOLOGY Inc. |
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Effective date of registration: 20220323 Address after: 710000 export processing zone, No. 1, Fengcheng 12th Road, Xi'an Economic and Technological Development Zone, Shaanxi Province Patentee after: Longteng Semiconductor Co.,Ltd. Patentee after: Xi'an Longxiang Semiconductor Co.,Ltd. Patentee after: Xusi semiconductor (Shanghai) Co.,Ltd. Address before: 710021 export processing zone, No.1, Fengcheng 12th Road, Xi'an City, Shaanxi Province Patentee before: Longteng Semiconductor Co.,Ltd. |