CN108028292B - 使用切割带将陶瓷磷光板附着在发光器件(led)管芯上的方法、形成切割带的方法以及切割带 - Google Patents
使用切割带将陶瓷磷光板附着在发光器件(led)管芯上的方法、形成切割带的方法以及切割带 Download PDFInfo
- Publication number
- CN108028292B CN108028292B CN201680026347.0A CN201680026347A CN108028292B CN 108028292 B CN108028292 B CN 108028292B CN 201680026347 A CN201680026347 A CN 201680026347A CN 108028292 B CN108028292 B CN 108028292B
- Authority
- CN
- China
- Prior art keywords
- adhesive layer
- dicing tape
- support film
- ceramic phosphor
- free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 70
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000012790 adhesive layer Substances 0.000 claims abstract description 91
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 239000002313 adhesive film Substances 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- 239000011344 liquid material Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 238000005266 casting Methods 0.000 claims description 5
- 238000010345 tape casting Methods 0.000 claims description 5
- 238000001125 extrusion Methods 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 3
- 229920005989 resin Polymers 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000003475 lamination Methods 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000011865 Pt-based catalyst Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010415 colloidal nanoparticle Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000006114 decarboxylation reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- DKYWVDODHFEZIM-UHFFFAOYSA-N ketoprofen Chemical compound OC(=O)C(C)C1=CC=CC(C(=O)C=2C=CC=CC=2)=C1 DKYWVDODHFEZIM-UHFFFAOYSA-N 0.000 description 1
- 229960000991 ketoprofen Drugs 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- KPADFPAILITQBG-UHFFFAOYSA-N non-4-ene Chemical compound CCCCC=CCCC KPADFPAILITQBG-UHFFFAOYSA-N 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 238000006053 organic reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- SCXZATZIVUFOFT-UHFFFAOYSA-N undec-5-ene Chemical compound [CH2]CCCC=CCCCCC SCXZATZIVUFOFT-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Led Device Packages (AREA)
- Dicing (AREA)
- Optical Filters (AREA)
Abstract
一种方法，其包含：将陶瓷磷光体（102）安装于切割带（104）的无丙烯酸且无含金属的催化剂的胶粘层（108）上，从切割带（104）将陶瓷磷光体（102）切割成陶瓷磷光板（112），从切割带（104）移除陶瓷磷光板（112），以及将陶瓷磷光板（112）附着在发光器件（LED）管芯上。
Description
技术领域
本公开涉及半导体发光二极管或器件(LED)，并且更具体的涉及用于LED的陶瓷磷光板。
背景技术
在倒装芯片发光二极管或器件(LED)中，接触位于LED的底部上，并且从LED的顶部发射光。LED外延层生长在图案化的蓝宝石生长衬底上，该衬底被留下附着到外延层以增加光输出。将外延层和生长衬底单一化为管芯并直接附着到陶瓷砖衬底上。陶瓷磷光体被分别地形成并切割以形成陶瓷磷光板。对于每个管芯，将硅树脂基胶分配到其蓝宝石上，并且将陶瓷磷光板拾取并放置在蓝宝石上。将白色氧化钛硅树脂复合材料（TiO-硅树脂）施加到陶瓷砖衬底上的管芯上和管芯之间。通过湿式喷砂从陶瓷磷光板的顶部移除过量的TiO-硅树脂，然后将各个管芯单一化。
发明内容
在本公开的一个或多个实例中，一种方法包括：将陶瓷磷光体安装于切割带的无丙烯酸的胶粘层上，从切割带将陶瓷磷光体切割成陶瓷磷光板，从切割带移除陶瓷磷光板，以及将陶瓷磷光板附着在发光器件（LED）管芯上。
附图说明
在附图中：
图1图示了通过安装于带框的切割带保持的陶瓷磷光体的截面图。
图2图示了本公开的实例中具有支撑薄膜和支撑薄膜之上的无丙烯酸的胶粘层的切割带的截面图。
图3图示了本公开的实例中具有另一个切割带和该另一个切割带上的无丙烯酸的胶粘层的切割带的截面图。
图4是本公开的实例中将陶瓷磷光板提供到LED管芯的方法的流程图。
图5是本公开的实例中在图4的方法中通过刮涂或包覆成型铸造（over-moldcasting）提供胶粘层的方法的流程图。
图6是本公开的实例中在图4的方法中通过挤压提供胶粘层的方法的流程图。
图7是本公开的实例中通过层压提供胶粘层的方法的流程图。
图8图示了本公开的实例中通过图7的方法实现的层压工艺的截面图。
在不同的图中使用相同的附图标记指示相似的或相同的元件。
具体实施方式
图1图示了通过安装于带框106的切割带104保持的陶瓷磷光体102的截面图100。切割带104可以是在支撑薄膜110上具有胶粘层108的胶粘带。从框安装的切割带104切割陶瓷磷光体102以形成陶瓷磷光板112（示为被虚切割线分离）。可以拉伸切割带104以横向地分离陶瓷磷光板112。当可以通过UV曝光调整胶粘层108的粘结结合时，切割带104可以是UV带，从而允许粘结结合在切割期间变强且在移除陶瓷磷光板112期间变弱。
胶粘层108含有丙烯酸，并且在陶瓷磷光板112从切割带104移除之后，丙烯酸残留物留在陶瓷磷光板112上。陶瓷磷光板112可以在切割之后进行另外的带转移，从而将板的两侧暴露于丙烯酸带。已经确定，来自在切割和其它带转移中使用的丙烯酸带的丙烯酸残留物导致陶瓷磷光板中的褐变和光应力（高剂量的光子通量引起的应力），这导致LED管芯的早期故障。即使在用等离子体清洁陶瓷磷光板112以移除有机分子且清洁之后使用“翻转转移”来最小化带接触时，所得到的LED管芯仍然经历5%到6%的通量下降。
据信，受限在陶瓷磷光板和LED管芯之间的间隙（胶）中的残留分子经历光和热化学降解（光热解），产生光吸收物质。这在缺少氧气以将光吸收物质光漂白时尤其普遍，由于胶合面积相对于粘合线（胶的厚度）十分大，因此存在跨越填充有胶的窄间隙的长路径，这限制了气体交换。
本公开的实例通过使用具有无丙烯酸胶粘层的切割带防止了丙烯酸污染。胶粘层可以形成在切割带的支撑薄膜上，或者胶粘层可以是层压在切割带的支撑薄膜上的胶粘薄膜或薄片。
图2图示了本公开的实例中具有支撑薄膜110和支撑薄膜110之上的无丙烯酸的胶粘层202的切割带201的截面图200。切割带201通过胶粘层202安装于带框106上。
陶瓷磷光体102可以从框安装的切割带201切割。陶瓷磷光体可以是来自加利福尼亚州圣何塞Lumileds公司的Lumiramic。胶粘层202可以是无丙烯酸的硅热固性树脂。胶粘层202也可以不含包括铂(Pt)、锡(Sn)或锌(Zn)的任何含金属的催化剂。含金属的催化剂可以是包括与几种有机配体配位或形成盐的金属的化合物。含金属的催化剂的实例见美国专利US5561231。例如，Pt基催化剂是不合需要的，因为它在交联工艺即将结束之际形成光吸收胶体纳米颗粒，例如，由H. Bai 在Ind. Eng. Chem. Res. 2014, 53, 1588-1597中所论述。Pt也是特定有机反应的催化剂，包括一些导致含亚苯基的硅树脂褐变的催化剂。此外，硅树脂通常在Pt催化体系中掺有抑制剂以延长贮存寿命（工作时间），并且如果这些添加剂抑制胶的催化剂，它们可能会褐变或抑制管芯附着胶的聚合。
胶粘层202可以包括光潜（photo-latent）或光引发的胺催化剂（也称为“光-碱生成剂”或“光-阴离子引发剂”），因此可以通过使胶粘层202光学显影来调整胶粘层202的粘结结合。这允许胶粘层202的粘结结合在陶瓷磷光体切割期间变强且在移除陶瓷磷光板期间变弱。胺催化剂形成碱和酸之间的中性盐。碱可以是DBU(1,5-二氮杂双环[5.4.0]十一-5-烯)、DBN(1,5-二氮杂双环[4.3.0]壬-5-烯)等，酸可以是酮洛芬((RS)2-(3-苯甲酰苯)-丙酸)或苯基乙醇酸。在UV照射下，酸的苯基乙醇或苯甲酰苯基成分吸收光并进行脱羧反应（产生CO2），碱（DBN、DBU等）变得游离。于是该碱能够催化缩合和开环聚合反应。
胶粘层202可以是可从密歇根州米德兰的Dow Corning获得的LF-1010、LF-1011或LF-1012（也称为“热熔”）粘合剂或可从佛罗里达州盖恩斯维尔的SiVance LLC（该公司是南卡罗来纳州斯帕坦堡的Milliken Chemical的子公司）获得的HT-8200、HT-8800或HT-8660（也称为“XLED”）密封剂。
图3图示了在本公开的实施例中具有切割带104和切割带104上的无丙烯酸的胶粘层202的切割带301的截面图300。切割带301通过胶粘层202安装于带框106上。陶瓷磷光体102可以从框安装的切割带301切割。
在图3中，胶粘层202位于切割带104的胶粘层108侧上。胶粘层202防止陶瓷磷光体102与切割带104的胶粘层108相互作用。在一些实例中，胶粘层202位于切割带104的支撑薄膜110侧上。在这样的实例中，切割带104可以不具有胶粘层108，因此减少了具有陶瓷磷光体102的最终的框安装的带104的厚度。减少框安装的带104的厚度可以改善在切割陶瓷磷光体102之后从带上拾取陶瓷磷光板112。
图4是本公开的实例中提供陶瓷磷光板到LED管芯的方法400的流程图。方法400可以从框402中开始。
在框402中，将陶瓷磷光体102安装于切割带201或301（图2或图3）的胶粘层202（图2或图3）上。切割带201或301可以安装于带框106上。在图3所示的实例中，胶粘层202可以在陶瓷磷光体102和切割带104的胶粘层108或支撑薄膜110侧之间。框402后可以接着框404。
在框404中，从切割带201或301将陶瓷磷光体102切割成陶瓷磷光板112（图2或图3）。框404后可以接着框406。
在框406中，陶瓷磷光板112被从切割带201或301移除并附着在LED管芯上（未示出）。在移除之前，胶粘层202可以被光学显影以降低其粘结结合。对于每个管芯，将高折射率（HRI）硅树脂基胶分配到其蓝宝石上，并且拾取陶瓷磷光板112并放置在蓝宝石上。硅树脂基胶可以是可从佛罗里达州盖恩斯维尔的SiVance LLC（该公司是南卡罗来纳州斯帕坦堡的Milliken Chemical的子公司）获得的XLED密封剂。
图5是在本公开的实例中实现框402的方法500的流程图。方法500通过刮涂或包覆成型铸造形成支撑薄膜110之上的胶粘层202。方法500可以从框502开始。
在框502中，用于胶粘层202的液体材料沉积在支撑薄膜110上或支撑薄膜110上的胶粘层108上。框502后可以接着框504。
在框504中，液体材料被刮涂或包覆成型在支撑薄膜110或胶粘层108上，以形成胶粘层202。对于刮涂，在液体材料之上拖动刀口以形成具有均匀厚度的胶粘层202。对于包覆注塑，应用模具以形成具有均匀厚度的胶粘层202。框504后可以接着框506。
在框506中，将陶瓷磷光体102放置在胶粘层202上并结合到胶粘层202上。可以预热陶瓷磷光体102或胶粘层202以辅助结合工艺。
图6是在本公开的实例中实现框402的方法600的流程图。方法600通过挤压在支撑薄膜110之上形成胶粘层202。方法600可以从框602开始。
在框602中，使用卷对卷(roll-to-roll)工艺将胶粘层202挤压在支撑薄膜110上或支撑薄膜110上的胶粘层108上。框602后可以接着框606。
在框606中，将陶瓷磷光体102放置在胶粘层202上并结合到胶粘层202上。
图7是在本公开的实例中实现框402的方法700的流程图。方法700通过层压在支撑薄膜110上形成胶粘层202。方法700可以在切割带201或301（图2或图3）安装于带框106上之后发生。图8示出了本公开的实例中该层压工艺的截面图。返回参考图7，方法700可以从框702中开始。
在框702中，提供胶粘薄片或薄膜801（图8）。胶粘薄膜801可以通过刮涂、包覆成型铸造或使用卷对卷工艺挤压形成。框702后可以接着框704。
在框704中，将胶粘薄膜801放置在支撑薄膜110上或支撑薄膜110上的胶粘层108上。在层压支撑薄膜110之上的薄膜前，可以将胶粘薄膜801预热。例如，可以以80到170摄氏度之间的温度将胶粘薄膜801加热1到20分钟。如果要在同一工艺中层压陶瓷磷光体102，则可将其放置在胶粘薄膜801上。可以将第一释放带802（图8）放置在陶瓷磷光体102的顶表面上，并且可以将第二释放带804（图8）放置在支撑薄膜110的底表面上。框704后可以接着框706。
在框706中，胶粘薄膜801层压在支撑薄膜110之上以形成胶粘层202。对置的压机（press）或滚轮806、808（图8）施加适当的压力和温度以将各层层压在一起。尽管未示出，但是可以使用真空泵来挤出层之间的气泡。胶粘薄膜801在支撑薄膜110上的层压可以在具有不同时间、温度或压力的多个阶段上发生。例如，层压可以在80到170摄氏度之间的温度下且在1到30巴之间的压力下发生0.5秒到几分钟的时间。当陶瓷磷光体102在同一工艺中层压时，由于其脆性，可以减小压力。如果使用释放带802和804（图8），则它们在层压之后被移除。框706后可以接着框708。
在框708中，如果尚未在框704中放置陶瓷磷光体102并在框706中层压陶瓷磷光体102，则陶瓷磷光体102可以放置在胶粘层202上，并且使用另一层压工艺将陶瓷磷光体102层压在胶粘层202上。
所公开的实施例的特征的各种其它改编和组合都在本发明的范围内。所附权利要求涵盖许多实施例。
Claims (15)
1.一种用于将陶瓷磷光板提供到LED管芯的方法，包括：
将陶瓷磷光体安装于切割带的无丙烯酸且无含金属的催化剂的胶粘层上；
从切割带将陶瓷磷光体切割成所述陶瓷磷光板；
从切割带移除所述陶瓷磷光板；以及
将所述陶瓷磷光板附着在所述LED管芯上。
2.根据权利要求1所述的方法，其中所述胶粘层包含无丙烯酸和铂的硅热成型树脂并且不含包括铂、锡或锌的含金属的催化剂。
3.根据权利要求1所述的方法，其中所述切割带安装于带框上。
4.根据权利要求1所述的方法，其中所述胶粘层包括光潜或光引发的胺催化剂；并且
移除陶瓷磷光板包括使胶粘层光学显影以降低胶粘层与陶瓷磷光板的粘结结合。
5.根据权利要求1所述的方法，其中将陶瓷磷光板附着在LED管芯上包括将高折射率硅树脂基胶施加到LED管芯上。
6.根据权利要求1所述的方法，其中所述胶粘层形成在所述切割带的支撑薄膜上或支撑薄膜上的另一个胶粘层上，该另一个胶粘层包含丙烯酸。
7.根据权利要求1所述的方法，进一步包括通过以下步骤形成所述切割带：
在所述切割带的支撑薄膜上或支撑薄膜上的另一个胶粘层上沉积用于胶粘层的液体材料；以及
刮涂支撑薄膜上或支撑薄膜上的另一个胶粘层上的液体材料，以形成所述胶粘层。
8.根据权利要求1所述的方法，进一步包括通过以下步骤形成所述切割带：
在所述切割带的支撑薄膜上或支撑薄膜上的另一个胶粘层上沉积用于胶粘层的液体材料；以及
包覆成型支撑薄膜上或所述另一个胶粘层上的液体材料，以形成所述胶粘层。
9.根据权利要求1所述的方法，进一步包括通过以下步骤形成所述切割带：
通过卷对卷工艺挤压所述切割带的支撑薄膜上的胶粘层或支撑薄膜上的另一个胶粘层。
10.根据权利要求1所述的方法，其中将陶瓷磷光体安装于切割带的无丙烯酸的胶粘层上，包括：
层压所述切割带的支撑薄膜上或支撑薄膜上的另一个胶粘层上的胶粘薄膜以形成所述胶粘层，并且将所述陶瓷磷光体放置在胶粘层上；或
在同一工艺中层压所述陶瓷磷光体和在支撑薄膜上或另一个胶粘层上的胶粘薄膜。
11.一种形成切割带的方法，包括：
提供支撑薄膜；以及
在所述支撑薄膜之上形成无丙烯酸且无含金属的催化剂的胶粘层，其中所述胶粘层包含无丙烯酸的硅热成型树脂。
12.根据权利要求11所述的方法，其中形成胶粘层包括：
在支撑薄膜上或支撑薄膜上的另一个胶粘层上沉积用于胶粘层的液体材料；以及
包覆成型支撑薄膜上或另一个胶粘层上的液体材料，以形成所述胶粘层。
13.根据权利要求11所述的方法，其中形成胶粘层包括：
通过卷对卷工艺挤压支撑薄膜上或支撑薄膜上的另一个胶粘层上的胶粘层。
14.根据权利要求11所述的方法，其中形成胶粘层包括：
层压切割带的支撑薄膜上或支撑薄膜上的另一个胶粘层上的胶粘薄膜；并且
其中所述胶粘薄膜通过刮涂、挤压或包覆成型铸造形成。
15.一种切割带，包含：
支撑薄膜；以及
在支撑薄膜之上的无丙烯酸且无含金属的催化剂的胶粘层，其中所述胶粘层包含无丙烯酸的硅热成型树脂。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562129282P | 2015-03-06 | 2015-03-06 | |
| US62/129,282 | 2015-03-06 | ||
| PCT/US2016/020843 WO2016144732A1 (en) | 2015-03-06 | 2016-03-04 | Method for attaching ceramic phosphor plates on light-emitting device (led) dies using a dicing tape, method to form a dicing tape, and dicing tape |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108028292A CN108028292A (zh) | 2018-05-11 |
| CN108028292B true CN108028292B (zh) | 2020-11-17 |
Family
ID=55661551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680026347.0A Active CN108028292B (zh) | 2015-03-06 | 2016-03-04 | 使用切割带将陶瓷磷光板附着在发光器件(led)管芯上的方法、形成切割带的方法以及切割带 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10734543B2 (zh) |
| EP (1) | EP3266048B1 (zh) |
| JP (2) | JP6740236B2 (zh) |
| KR (1) | KR102470834B1 (zh) |
| CN (1) | CN108028292B (zh) |
| TW (1) | TWI787147B (zh) |
| WO (1) | WO2016144732A1 (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3266048B1 (en) * | 2015-03-06 | 2019-10-02 | Koninklijke Philips N.V. | Method for attaching ceramic phosphor plates on light-emitting device (led) dies using a dicing tape |
| US10522728B2 (en) | 2017-01-26 | 2019-12-31 | Maven Optronics Co., Ltd. | Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same |
| JP6876499B2 (ja) * | 2017-04-17 | 2021-05-26 | 積水化学工業株式会社 | 半導体デバイス用粘着剤組成物及び半導体デバイス用粘着テープ |
| EP3662517B1 (en) * | 2017-08-03 | 2021-03-24 | Lumileds LLC | Light emitting device and method of manufacturing thereof |
| US10128419B1 (en) * | 2017-08-03 | 2018-11-13 | Lumileds Llc | Method of manufacturing a light emitting device |
| US10879431B2 (en) | 2017-12-22 | 2020-12-29 | Lumileds Llc | Wavelength converting layer patterning for LED arrays |
| JP2019201089A (ja) * | 2018-05-15 | 2019-11-21 | マブン オプトロニックス カンパニー リミテッドＭａｖｅｎ Ｏｐｔｒｏｎｉｃｓ Ｃｏ．， Ｌｔｄ． | チップスケールパッケージング発光素子の斜角チップ反射器およびその製造方法 |
| JP6791208B2 (ja) * | 2018-05-22 | 2020-11-25 | 信越半導体株式会社 | 発光素子の製造方法 |
| US11545597B2 (en) * | 2018-09-28 | 2023-01-03 | Lumileds Llc | Fabrication for precise line-bond control and gas diffusion between LED components |
| KR102176416B1 (ko) * | 2019-04-24 | 2020-11-10 | 스카이다이아몬드 주식회사 | 형광 박판 다이싱 방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010287777A (ja) * | 2009-06-12 | 2010-12-24 | Koito Mfg Co Ltd | 発光モジュールおよび車両用前照灯 |
| JP2013539229A (ja) * | 2010-09-29 | 2013-10-17 | コーニンクレッカ フィリップス エヌ ヴェ | 波長変換型発光デバイス |
| CN103715344A (zh) * | 2012-09-28 | 2014-04-09 | 日东电工株式会社 | 荧光体层贴附成套配件、光半导体元件-荧光体层贴附体及光半导体装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5181650A (ja) | 1975-01-16 | 1976-07-17 | Hitachi Ltd | Ekimenreberusensa |
| JPS6181650A (ja) * | 1984-09-28 | 1986-04-25 | Shin Etsu Polymer Co Ltd | ダイシングフイルム |
| KR950003310A (ko) | 1993-07-22 | 1995-02-16 | 에리히 프랑크, 칼-하인즈 림뵉 | 균질 히드로실릴화 촉매 |
| JP2003177241A (ja) | 2001-12-10 | 2003-06-27 | Fujimori Kogyo Co Ltd | 光学用積層体、粘着剤転写テープ、および光学用積層体の製造法 |
| JP4361309B2 (ja) * | 2003-04-17 | 2009-11-11 | 株式会社ディスコ | 半導体チップの製造方法 |
| JP2006028104A (ja) | 2004-07-16 | 2006-02-02 | Kyowa Hakko Kogyo Co Ltd | ヒストンデアセチラーゼ阻害剤 |
| US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
| JP2006328104A (ja) * | 2005-05-23 | 2006-12-07 | Jsr Corp | 接着剤組成物 |
| TW200946836A (en) | 2008-02-08 | 2009-11-16 | Koninkl Philips Electronics Nv | Optical element and manufacturing method therefor |
| JP2011513995A (ja) * | 2008-03-07 | 2011-04-28 | スリーエム イノベイティブ プロパティズ カンパニー | 模様付き裏材を備えるダイシングテープ及びダイアタッチ接着剤 |
| JP5744434B2 (ja) | 2010-07-29 | 2015-07-08 | 日東電工株式会社 | 加熱剥離シート一体型半導体裏面用フィルム、半導体素子の回収方法、及び半導体装置の製造方法 |
| KR101330592B1 (ko) | 2011-06-07 | 2013-11-18 | 도레이 카부시키가이샤 | 수지 시트 적층체, 그 제조 방법 및 그것을 사용한 형광체 함유 수지 시트가 부착된 ｌｅｄ칩의 제조 방법 |
| US8912021B2 (en) * | 2011-09-12 | 2014-12-16 | SemiLEDs Optoelectronics Co., Ltd. | System and method for fabricating light emitting diode (LED) dice with wavelength conversion layers |
| CN103427004A (zh) * | 2012-05-17 | 2013-12-04 | 旭明光电股份有限公司 | 制造具有波长转换层的发光二极管晶粒的系统及方法 |
| US8889439B2 (en) * | 2012-08-24 | 2014-11-18 | Tsmc Solid State Lighting Ltd. | Method and apparatus for packaging phosphor-coated LEDs |
| JP6207192B2 (ja) * | 2013-03-25 | 2017-10-04 | リンテック株式会社 | 半導体加工用粘着シート |
| WO2015002270A1 (ja) | 2013-07-05 | 2015-01-08 | リンテック株式会社 | ダイシングシート |
| EP3266048B1 (en) * | 2015-03-06 | 2019-10-02 | Koninklijke Philips N.V. | Method for attaching ceramic phosphor plates on light-emitting device (led) dies using a dicing tape |
-
2016
- 2016-03-04 EP EP16714616.6A patent/EP3266048B1/en active Active
- 2016-03-04 CN CN201680026347.0A patent/CN108028292B/zh active Active
- 2016-03-04 JP JP2017546800A patent/JP6740236B2/ja active Active
- 2016-03-04 WO PCT/US2016/020843 patent/WO2016144732A1/en active Application Filing
- 2016-03-04 TW TW105106830A patent/TWI787147B/zh active
- 2016-03-04 KR KR1020177027967A patent/KR102470834B1/ko active IP Right Grant
- 2016-03-04 US US15/556,237 patent/US10734543B2/en active Active
-
2020
- 2020-07-21 US US16/934,827 patent/US11563141B2/en active Active
- 2020-07-22 JP JP2020124858A patent/JP7012790B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010287777A (ja) * | 2009-06-12 | 2010-12-24 | Koito Mfg Co Ltd | 発光モジュールおよび車両用前照灯 |
| JP2013539229A (ja) * | 2010-09-29 | 2013-10-17 | コーニンクレッカ フィリップス エヌ ヴェ | 波長変換型発光デバイス |
| CN103715344A (zh) * | 2012-09-28 | 2014-04-09 | 日东电工株式会社 | 荧光体层贴附成套配件、光半导体元件-荧光体层贴附体及光半导体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180053877A1 (en) | 2018-02-22 |
| JP6740236B2 (ja) | 2020-08-12 |
| US11563141B2 (en) | 2023-01-24 |
| TWI787147B (zh) | 2022-12-21 |
| EP3266048A1 (en) | 2018-01-10 |
| EP3266048B1 (en) | 2019-10-02 |
| JP2020170877A (ja) | 2020-10-15 |
| JP2018511941A (ja) | 2018-04-26 |
| JP7012790B2 (ja) | 2022-01-28 |
| KR102470834B1 (ko) | 2022-11-28 |
| KR20170128410A (ko) | 2017-11-22 |
| US10734543B2 (en) | 2020-08-04 |
| CN108028292A (zh) | 2018-05-11 |
| TW201708459A (zh) | 2017-03-01 |
| US20200350462A1 (en) | 2020-11-05 |
| WO2016144732A1 (en) | 2016-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108028292B (zh) | 使用切割带将陶瓷磷光板附着在发光器件(led)管芯上的方法、形成切割带的方法以及切割带 | |
| US8795817B2 (en) | Phosphor film, method of manufacturing the same, coating method of phosphor layer, method of manufacturing LED package, and LED package manufactured thereby | |
| CN106415823B (zh) | 半导体装置、积层型半导体装置、密封后积层型半导体装置以及这些装置的制造方法 | |
| JP2013526052A5 (zh) | ||
| JP2005332982A5 (zh) | ||
| WO2020076603A8 (en) | Bonding of a light emitting diode to a substrate | |
| MY160731A (en) | Method for manufacturing electronic parts | |
| TW201440134A (zh) | 作爲切割膠帶黏著劑之晶圓背部塗層 | |
| CN110176432A (zh) | 半导体装置、积层型半导体装置、密封后积层型半导体装置 | |
| JP5800640B2 (ja) | 発光ダイオード装置の製造方法 | |
| MY158034A (en) | Method for manufacturing electronic component | |
| JP2004349435A (ja) | 基板へのダイシング・ダイボンドテープの貼り付け装置 | |
| CN104419341A (zh) | 切割用粘着胶带以及半导体芯片的制造方法 | |
| US10137603B2 (en) | Vacuum carrier module, method of using and process of making the same | |
| JP2013103959A (ja) | 半導体用接着シート | |
| TWI463577B (zh) | 晶粒附接薄膜及其製造方法 | |
| TW200943406A (en) | Semiconductor element manufacturing method | |
| US12044965B2 (en) | Method for forming components without adding tabs during etching | |
| JP2018523256A (ja) | 変換部品の製造方法およびオプトエレクトロニクス照明装置 | |
| JP2015500391A (ja) | 接着フィルムを、ダイシングテープ上のプレカットされた半導体ウェハの形状に製造する方法 | |
| DE502008002706D1 (de) | Vorrichtung zur Herstellung von Flüssigkeitsschichten mit vorbestimmter Dicke auf einem Träger | |
| KR101375054B1 (ko) | 플렉서블 소자 제조방법, 이를 이용한 플렉서블 발광 다이오드 제조방법 및 이에 의하여 제조된 플렉서블 발광 다이오드 | |
| KR20170022524A (ko) | 취성 기판의 분단 방법 및 분단 장치 | |
| KR101930258B1 (ko) | 유리기판 척에 대한 유연 기판의 척킹 및 디척킹 방법 | |
| JP2015188803A5 (zh) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |