CN107921744B - 层叠体和电子部件 - Google Patents

层叠体和电子部件 Download PDF

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Publication number
CN107921744B
CN107921744B CN201680050458.5A CN201680050458A CN107921744B CN 107921744 B CN107921744 B CN 107921744B CN 201680050458 A CN201680050458 A CN 201680050458A CN 107921744 B CN107921744 B CN 107921744B
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ferrite
glass
glass ceramic
layer
ceramic layer
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CN107921744A (zh
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足立大树
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/129—Ceramic dielectrics containing a glassy phase, e.g. glass ceramic
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/008—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression characterised by the composition
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
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    • H—ELECTRICITY
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Abstract

本发明的层叠体具有由玻璃陶瓷层和铁氧体层构成的层叠结构，上述玻璃陶瓷层含有玻璃和填料，上述铁氧体层含有铁氧体，玻璃陶瓷层中的玻璃的含量为30.0重量％～80.0重量％，填料的含量为20.0重量％～70.0重量％，玻璃陶瓷层所含的玻璃含有相对于上述玻璃整体的重量为0.5重量％～5.0重量％的R2O(R为选自Li、Na和K中的至少1种)、0重量％～5.0重量％的Al2O3、10.0重量％～25.0重量％的B2O3和70.0重量％～85.0重量％的SiO2，玻璃陶瓷层所含的上述填料含有SiO2和Al2O3中的至少1种，进一步含有相对于上述玻璃和上述填料的合计重量为5.0重量％～15.0重量％的铁氧体。

Description

层叠体和电子部件
技术领域
本发明涉及层叠体和电子部件。
背景技术
伴随电子设备的小型化，对装入电子设备的各种电子部件也要求小型化和矮型化。例如，近年来，提出了通过在陶瓷基板的内部形成具有高导磁率的铁氧体层并在该铁氧体层埋设线圈导体而形成LC滤波器。
专利文献1中，公开了将铁氧体层、绝缘层和配置在绝缘层与铁氧体层之间的中间层进行层叠而成的玻璃陶瓷基板，其中，上述铁氧体层具有铁氧体晶体，上述绝缘层具有含有与铁氧体晶体相同的晶体结构的第1晶体的玻璃陶瓷，上述中间层具有含有第1晶体的玻璃陶瓷和铁氧体晶体。专利文献1所记载的玻璃陶瓷基板的特征在于，中间层的多个铁氧体晶体的一部分向绝缘层侧突出。
现有技术文献
专利文献
专利文献1:日本特开2012－80046号公报
发明内容
对于层叠由玻璃陶瓷构成的绝缘层与铁氧体层而成的层叠体而言，由于两者的热膨胀系数差大，所以在共烧时会有产生剥离、裂纹、弯曲等缺陷这样的问题。在专利文献1所述的构成中，由于在玻璃陶瓷层与铁氧体层之间设置了中间层，所以缓和以线膨胀系数的差为原因的剥离等问题。但是，由于需要设置不具有作为电介质和磁性体的电磁功能的中间层，所以与不设置中间层的情况相比，难以实现矮型化。
另外，玻璃陶瓷层由含有大量SiO2的玻璃构成，所以具有透明性。因此，在表层配置玻璃陶瓷层时，透过表面看到形成在玻璃陶瓷层内的内层电极，所以存在难以辨别例如表层电极的镀覆不良等的问题。
本发明是为了解决上述问题而进行的，其目的在于提供一种相对介电常数低且绝缘电阻高的玻璃陶瓷层与铁氧体层层叠的层叠体，即便在玻璃陶瓷层与铁氧体层之间不设置中间层，也能够防止界面上的剥离等的产生和绝缘电阻的降低，并且提供玻璃陶瓷层透明性低的层叠体。
为了实现上述目的，本发明的层叠体的特征在于，具有由玻璃陶瓷层和铁氧体层构成的层叠结构，上述玻璃陶瓷层含有玻璃和填料，上述铁氧体层含有铁氧体，上述玻璃陶瓷层中的玻璃的含量为30.0重量％～80.0重量％，填料的含量为20.0重量％～70.0重量％，上述玻璃陶瓷层所含的玻璃含有相对于上述玻璃整体的重量为0.5重量％～5.0重量％的R2O(R选自Li、Na和K中的至少1种)、0重量％～5.0重量％的Al2O3、10.0重量％～25.0重量％的B2O3和70.0重量％～85.0重量％的SiO2，上述玻璃陶瓷层所含的上述填料含有SiO2和Al2O3中的至少1种，进一步含有相对于上述玻璃和上述填料的合计重量为5.0重量％～15.0重量％的铁氧体。
在本发明的层叠体中，通过使玻璃陶瓷层含有能够将玻璃陶瓷层的相对介电常数维持得较低的程度的量的铁氧体，从而使玻璃陶瓷层与铁氧体层的收缩行为的差变小，因此即便不设置中间层，也能够防止界面上的剥离等的产生。
另外，通过使玻璃陶瓷层含有SiO2和Al2O3中的至少1种以及铁氧体，能够防止玻璃陶瓷层和铁氧体层的共烧体的绝缘电阻的降低。
认为这是由于玻璃陶瓷层－铁氧体层间的相互扩散减少。如果玻璃陶瓷层含有SiO2和Al2O3中的至少1种以及铁氧体，则在煅烧中途，作为填料的SiO2和Al2O3的一部分与玻璃成分反应而成为玻璃组成的一部分，由此玻璃粘度变高，因此不易发生玻璃成分向铁氧体层的扩散。另外，通过使玻璃陶瓷层含有铁氧体，从而玻璃陶瓷层－铁氧体层间的铁氧体成分的浓度梯度变小，不易发生铁氧体成分向玻璃陶瓷层的扩散。其结果，共烧体得到良好的绝缘电阻特性。
此外，在本发明的层叠体中，由于玻璃陶瓷层所含的铁氧体作为失透材料发挥功能，所以阻碍玻璃陶瓷层的透明性。因此，从表面看不到形成在玻璃陶瓷层内的内层电极，容易辨别表层电极的镀覆不良等。
在本发明的层叠体中，上述玻璃陶瓷层所含的铁氧体优选具有与上述铁氧体层所含的铁氧体相同的组成。
通过使玻璃陶瓷层所含的铁氧体的组成与铁氧体层所含的铁氧体的组成相同，从而充分发挥减小玻璃陶瓷层与铁氧体层的收缩行为差的效果以及减少玻璃陶瓷层－铁氧体层间的相互扩散的效果。
在本发明的层叠体中，优选上述玻璃陶瓷层所含的铁氧体和上述铁氧体层所含的铁氧体均为Ni－Zn系铁氧体。
在具有尖晶石结构的强磁性铁氧体中，Ni－Zn系铁氧体在高频带具有充分高的导磁率，因此适合高频用途。
本发明的层叠体可以为多层陶瓷基板，也可以为芯片部件。
本发明的电子部件的特征在于，具备上述层叠体。
根据该发明，能够提供相对介电常数低且绝缘电阻高的玻璃陶瓷层与铁氧体层层叠而成的层叠体，即便在玻璃陶瓷层与铁氧体层之间不设置中间层，也能够防止界面上的剥离等的产生和绝缘电阻的降低，并且玻璃陶瓷层的透明性低。
附图说明
图1是示意地表示本发明的层叠体的一个例子的截面图。
图2是示意地表示多层陶瓷基板的一个例子的截面图。
图3是示意地表示作为芯片部件的LC滤波器的一个例子的截面图。
图4(a)、图4(b)和图4(c)是各实施例和各比较例中制作的电介质电容器的示意图。图4(a)是厚度方向的截面图，图4(b)是沿一方的电极所通过的面的截面图，图4(c)是沿另一方的电极所通过的面的截面图。
图5(a)、图5(b)和图5(c)是各实施例和各比较例中制作的共烧体电容器的示意图。图5(a)是厚度方向的截面图，图5(b)是沿一方的电极所通过的面的截面图，图5(c)是沿另一方的电极所通过的面的截面图。
图6(a)和图6(b)是各实施例和各比较例中制作的非透明性评价用基板的示意图。图6(a)是厚度方向的截面图，图6(b)是沿电极所通过的面的截面图。
图7是各实施例和各比较例中制作的剥离评价用共烧体的示意图。
图8是使用具有本发明的范围内的组成的试样制作的共烧体的外观照片。
具体实施方式
以下，对本发明的层叠体和电子部件进行说明。
然而，本发明不限于以下的构成，在不变更本发明的主旨的范围内可适当地变更使用。
以下所示的各实施方式为例示，可以对不同的实施方式中示出的构成进行部分替换或者组合。
应予说明，将以下记载的本发明的各个优选构成组合2种以上而成的构成也仍为本发明。
图1是示意地表示本发明的层叠体的一个例子的截面图。
图1所示的层叠体10具有由含有玻璃和填料的玻璃陶瓷层1及含有铁氧体的铁氧体层2构成的层叠结构。在玻璃陶瓷层1与铁氧体层2之间没有设置中间层，玻璃陶瓷层1与铁氧体层2相接。层叠体10是将玻璃陶瓷层1和铁氧体层2进行共烧而得到的共烧体。
图1中，玻璃陶瓷层1和铁氧体层2分别作为一体的层进行图示，但实际上，可以具有由多个层构成的层叠结构。
铁氧体层所含的铁氧体优选为尖晶石结构的固溶体即强磁性铁氧体，例如，可举出Ni－Zn系铁氧体(也包括Ni－Zn－Cu系铁氧体)、Mn－Zn系铁氧体、Mg－Zn系铁氧体、Ni－Co系铁氧体等。这些铁氧体可以仅含有1种，也可以含有2种以上。由于在高频带具有充分高的导磁率，在具有尖晶石结构的强磁性铁氧体中也优选Ni－Zn系铁氧体，更优选Ni－Zn－Cu系铁氧体。
铁氧体层可以含有铁氧体以外的填料，但铁氧体层中的铁氧体的含量优选为95.0重量％以上，更优选为100重量％。
玻璃陶瓷层所含的玻璃含有相对于玻璃整体的重量为0.5重量％～5.0重量％的R2O(R选自Li、Na和K中的至少1种)、0重量％～5.0重量％的Al2O3、10.0重量％～25.0重量％的B2O3和70.0重量％～85.0重量％的SiO2。Al2O3为任意成分。
玻璃陶瓷层所含的玻璃中可以含有其它的杂质，含有杂质时，优选含量为低于5.0重量％。
玻璃陶瓷层中的玻璃的含量为30.0重量％～80.0重量％，优选为45.0重量％～65.0重量％。
玻璃陶瓷层所含的填料含有SiO2和Al2O3中的至少1种。作为SiO2，可举出石英等。
本说明书中，填料是指玻璃中不含的无机添加剂。
玻璃陶瓷层中的填料的含量为20.0重量％～70.0重量％，优选为35.0重量％～55.0重量％。
相对于玻璃和填料的合计重量的SiO2的含量优选为5.0重量％～60.0重量％，更优选为20.0重量％～40.0重量％。另外，相对于玻璃和填料的合计重量的Al2O3的含量优选为0.5重量％～10.0重量％。
玻璃陶瓷层所含的填料进一步含有铁氧体。玻璃陶瓷层所含的铁氧体优选为尖晶石结构的固溶体即强磁性铁氧体，例如，可举出Ni－Zn系铁氧体(也包括Ni－Zn－Cu系铁氧体)、Mn－Zn系铁氧体、Mg－Zn系铁氧体、Ni－Co系铁氧体等。这些铁氧体可以仅含有1种，也可以含有2种以上。
玻璃陶瓷层所含的铁氧体可以为与铁氧体层所含的铁氧体不同的组成，但优选具有与铁氧体层所含的铁氧体相同的组成。特别优选玻璃陶瓷层所含的铁氧体和上述铁氧体层所含的铁氧体均为Ni－Zn系铁氧体，更优选为Ni－Zn－Cu系铁氧体。
相对于玻璃和填料的合计重量的铁氧体的含量为5.0重量％～15.0重量％，优选为8.0重量％～12.0重量％。
玻璃陶瓷层中，除了SiO2、Al2O3和铁氧体以外还可以含有填料(例如，ZrO2等)。
在本发明的层叠体中，在玻璃陶瓷层与铁氧体层的界面附近(距界面1μm左右的区域)，由于接合，相互的成分扩散。因此，在测定玻璃陶瓷层和铁氧体层的组成时，并不是测定玻璃陶瓷层与铁氧体层的界面附近的组成，而是测定远离界面的部分的组成。
制作图1所示的层叠体10时，首先，准备要成为玻璃陶瓷层1的玻璃陶瓷片材和要成为铁氧体层2的铁氧体片材。
玻璃陶瓷片材是将含有玻璃粉末、填料粉末、有机粘结剂和溶剂的浆料利用刮刀法等成型为片材状而得到的。另外，铁氧体片材是将含有铁氧体粉末、有机粘结剂和溶剂的浆料利用刮刀法等成型为片材状而得到的。这些浆料中可以含有增塑剂等各种添加剂。
将玻璃陶瓷片材和铁氧体片材层叠规定片数，进行煅烧，由此得到层叠体10。
本发明的层叠体适用于多层陶瓷基板。
图2是示意地表示多层陶瓷基板的一个例子的截面图。
图2所示的多层陶瓷基板20具有由铁氧体层22和在层叠方向夹持铁氧体层22而存在的2个玻璃陶瓷层21构成的层叠结构。
多层陶瓷基板20具备形成于玻璃陶瓷层21的配线导体。配线导体例如是用于构成电容器或感应器这样的无源元件或者用于进行元件间的电连接这样的连接配线的部件，典型的结构如图所示，由几个导体膜24、25和26以及几个导通孔导体27构成。这些配线导体优选以银或铜为主成分。
导体膜24形成在玻璃陶瓷层21的内部。导体膜25和26分别形成在多层陶瓷基板20的一主面上和另一主面上。导通孔导体27被设置成与导体膜24、25和26中的任一个进行电连接且在厚度方向贯通玻璃陶瓷层21。
多层陶瓷基板20进一步具备内置于铁氧体层22的线圈导体28。线圈导体28优选以银或铜为主成分。
图2中示出了将三绕组的平面线圈导体上下重叠2个而形成线圈导体28的例子。
在多层陶瓷基板20的一个主面上，以与导体膜25电连接的状态搭载有未图示的芯片部件。由此，构成具备多层陶瓷基板20的电子部件。搭载于多层陶瓷基板20的芯片部件可以为本发明的层叠体。
形成在多层陶瓷基板20的另一主面上的导体膜26作为将该电子部件安装于未图示的主板上时的电连接单元发挥使用。
这样的多层陶瓷基板可以如下制作：在上述的层叠体的制造方法中，将要成为配线导体的配线导体图案预先形成于玻璃陶瓷片材，将要成为线圈导体的线圈导体图案预先形成于铁氧体片材。如果为图2所示的多层陶瓷基板20，则可以如下制作：在形成有线圈导体图案的规定片数的铁氧体片材的上下配置形成有各配线导体图案的规定片数的玻璃陶瓷片材而制作层叠片材体并对该层叠片材体进行煅烧。
配线导体图案和线圈导体图案可以通过将含有银或铜等金属粉末、有机粘结剂和溶剂的导体膏利用丝网印刷法等印刷成规定图案而形成。导体膏中可以含有分散剂等各种添加剂。
煅烧层叠片材体时的煅烧温度没有特别限定，例如，可采用1000℃以下的煅烧温度。另外，煅烧气氛也没有特别限定，例如，使用银等不易氧化的材料作为导体材料时，优选在大气气氛下进行煅烧，使用铜等容易氧化的材料时，优选在氮气氛等低氧气氛下进行煅烧。
本发明的层叠体不仅适用于上述的多层陶瓷基板，还可适用于芯片部件。
图3是示意地表示作为芯片部件的LC滤波器的一个例子的截面图。
图3所示的LC滤波器30具有由玻璃陶瓷层31和铁氧体层32构成的层叠结构。
多个电容器电极33以相互对置的状态设置在玻璃陶瓷层31的内部，由此构成电容器34。另一方面，以线圈状延伸的线圈导体35设置在铁氧体层32的内部，由此构成感应器36。
虽未在图3中示出，但LC滤波器30进一步具备连接电容器34与感应器36的连接导体、成为输入输出端子的端电极以及成为接地端子的端电极。其中，成为输入输出端子的端电极和成为接地端子的端电极设置在LC滤波器30的外表面上。
作为可采用本发明的层叠体的芯片部件，除LC滤波器等LC复合部件以外，可举出电容器、感应器等。
本发明的层叠体也可以应用于上述的多层陶瓷基板或者芯片部件以外的设备。
本发明的层叠体只要具备由玻璃陶瓷层和铁氧体层构成的层叠结构，其结构就没有特别限定。
图2所示的多层陶瓷基板20具有在2个玻璃陶瓷层21之间夹持铁氧体层22的结构，但本发明的层叠体可以具有在2个铁氧体层之间夹持玻璃陶瓷层的结构。另外，被层叠的层数等也没有特别限定，可以在层叠体的表面配置玻璃陶瓷层和铁氧体层中的任一个。
实施例
以下，示出更具体地公开了本发明的层叠体的实施例。应予说明，本发明不仅限于这些实施例。
(玻璃陶瓷片材的制作)
以表1所示的玻璃组成，调合作为起始原料的氧化物或者碳酸盐，将其放入Pt坩埚中，根据玻璃组成在1400℃～1600℃的温度下熔融3小时。将该玻璃融液进行快速冷却后，粉碎，得到各试样涉及的玻璃粉末。将得到的各玻璃粉末及由表1所示的氧化铝粉末、石英粉末和Ni－Zn－Cu系铁氧体的预烧粉末构成的填料粉末按照表1所示的比例进行混合，并且向它们中加入溶剂、粘结剂和增塑剂进行充分混合，得到浆料。这里，使用乙醇和甲苯的混合溶液作为溶剂，使用丁醛树脂作为粘结剂，使用邻苯二甲酸酯作为增塑剂。将得到的浆料利用刮刀法进行成型，得到玻璃陶瓷片材。
在表1中，作为填料的氧化铝、石英和铁氧体各自的重量比以相对于玻璃和填料的合计重量的重量比表示。
[表1]
Figure BDA0001585152330000091
表1中，带*的试样的组成为本发明的范围外的组成。
(铁氧体片材的制作)
在Ni－Zn－Cu系铁氧体的预烧粉末中加入与上述相同的溶剂、粘结剂和增塑剂进行充分混合，得到浆料。将得到的浆料利用刮刀法进行成型，得到铁氧体片材。
使用得到的玻璃陶瓷片材和铁氧体片材，进行下述测定评价。
(相对介电常数测定)
剪切玻璃陶瓷片材进行层叠、压接，使其成为50mm×50mm×0.6mm，制作压接体。将该压接体在空气中、900℃下煅烧1小时，得到陶瓷基板。使用得到的陶瓷基板，利用空腔谐振器法测定相对介电常数εr。测定频率为3GHz。将各试样的相对介电常数示于表2。评价基准为εr≤4.5。
(绝缘电阻测定)
图4(a)、图4(b)和图4(c)是各实施例和各比较例中制作的电介质电容器的示意图。
剪切玻璃陶瓷片材在其上印刷Ag系电极膏后，进行层叠、压接使其成为规定的厚度，将其在空气中、900℃下煅烧1小时，由此制作10mm×10mm×1.0mm的电介质电容器(电极面积：4mm×4mm，电极间距离：30μm)。
图5(a)、图5(b)和图5(c)是各实施例和各比较例中制作的共烧体电容器的示意图。
使用玻璃陶瓷片材和铁氧体片材，制作由电介质和磁性体的复合体构成的共烧体电容器。将具有用煅烧后一侧厚度为0.5mm的铁氧体片材层夹持煅烧后厚度为90μm的玻璃陶瓷片材层而得的结构的复合体，在空气中、900℃下共烧1小时，由此制作仅在玻璃陶瓷片材的中央部分形成有电容器的10mm×10mm×1.0mm的共烧体电容器(电极面积：4mm×4mm，电极间距离：30μm)。
使用绝缘电阻测定器，测定电介质电容器和共烧体电容器的绝缘电阻。将各试样的绝缘电阻(logIR)示于表2。评价基准为logIR＞10。
(玻璃陶瓷层的非透明性评价)
图6(a)和图6(b)是各实施例和各比较例中制作的非透明性评价用基板的示意图。
剪切玻璃陶瓷片材在其上印刷Ag系电极膏后，进行层叠、压接使其成为规定的厚度，将其在空气中、900℃下煅烧1小时，由此制作10mm×10mm×1.0mm的内部电极内置基板(电极面积：4mm×4mm)。插入内部电极将其内置在距离表层10μm下方。
目视观察得到的基板的外观，将看到内置的内部电极的情况记为×，看不到的情况记为○，由此评价非透明性。将各试样的结果示于表2。
(在界面的剥离评价)
图7是各实施例和各比较例中制作的剥离评价用共烧体的示意图。
使用玻璃陶瓷片材和铁氧体片材，制作由电介质和磁性体的复合体构成的共烧体。将具有用煅烧后一侧厚度为0.4mm的铁氧体片材层夹持煅烧后厚度为0.4mm的玻璃陶瓷片材层而得的结构的复合体，在空气中、900℃下共烧1小时，由此制作15mm×15mm×1.2mm的共烧体。
使用金属显微镜观察得到的共烧体的外观，确认有无在各层界面的剥离、裂纹等。将各试样的结果示于表2。
[表2]
Figure BDA0001585152330000121
图8是使用具有本发明的范围内的组成的试样制作的共烧体的外观照片。图8所示的共烧体与图7同样地具有用2个磁性体(铁氧体层)夹持电介质(玻璃陶瓷层)的结构。根据图8，能够确认没有产生在各层界面的剥离、裂纹等。
另外，根据表2，确认了如果为具有由在本发明的范围内的组成的玻璃陶瓷层和铁氧体层构成的层叠体(实施例1～15)，则满足下述全部条件：玻璃陶瓷层的相对介电常数低(εr≤4.5)；没有产生在界面的剥离等；共烧体电容器的绝缘电阻与电介质电容器的绝缘电阻同等(logIR＞10)；以及玻璃陶瓷层的透明性低。
与此相对，在玻璃中的K2O少的比较例1、玻璃中的B2O3少且SiO2多的比较例4、玻璃中的SiO2多的比较例7和玻璃陶瓷层中的玻璃少且填料多的比较例8中，电介质电容器为未烧结。
在玻璃中的K2O多的比较例2、玻璃中的Al2O3多的比较例3、玻璃中的B2O3多的比较例5、玻璃中的SiO2少的比较例6、玻璃陶瓷层中的玻璃多且填料少的比较例9中，共烧体电容器的绝缘电阻比电介质电容器的绝缘电阻低。
在玻璃陶瓷层的铁氧体多的比较例10中，玻璃陶瓷层的相对介电常数高。
在玻璃陶瓷层的铁氧体少的比较例11中，玻璃陶瓷层的透明性高，共烧体电容器的绝缘电阻比电介质电容器的绝缘电阻低。另外，在玻璃陶瓷层中不含铁氧体的比较例12中，确认了玻璃陶瓷层的透明性高，产生在界面的剥离。
根据以上的结果，认为通过使用本发明的层叠体，能够实现具有优异的特性的电子部件。
符号说明
1、21、31 玻璃陶瓷层
2、22、32 铁氧体层
10 层叠体
20 多层陶瓷基板(层叠体)
30 LC滤波器(层叠体)

Claims (6)

1.一种层叠体，其特征在于，具有由玻璃陶瓷层和铁氧体层构成的层叠结构，所述玻璃陶瓷层含有玻璃和填料，所述铁氧体层含有铁氧体，
所述玻璃陶瓷层中的玻璃的含量为30.0重量％～80.0重量％，填料的含量为20.0重量％～70.0重量％，
所述玻璃陶瓷层所含的玻璃含有相对于所述玻璃整体的重量为0.5重量％～5.0重量％的R2O、0重量％～5.0重量％的Al2O3、10.0重量％～25.0重量％的B2O3以及70.0重量％～85.0重量％的SiO2，其中，所述R选自Li、Na和K中的至少1种，
所述玻璃陶瓷层所含的所述填料含有SiO2和Al2O3，进一步含有相对于所述玻璃和所述填料的合计重量为5.0重量％～15.0重量％的铁氧体。
2.根据权利要求1所述的层叠体，其中，所述玻璃陶瓷层所含的铁氧体具有与所述铁氧体层所含的铁氧体相同的组成。
3.根据权利要求1或2所述的层叠体，其中，所述玻璃陶瓷层所含的铁氧体和所述铁氧体层所含的铁氧体均为Ni－Zn系铁氧体。
4.根据权利要求1或2所述的层叠体，其中，所述层叠体为多层陶瓷基板。
5.根据权利要求1或2所述的层叠体，其中，所述层叠体为芯片部件。
6.一种电子部件，其特征在于，具备权利要求1～5中任一项所述的层叠体。
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