CN107803604A - 卡盘工作台、多孔陶瓷吸引板的制造方法和吸引保持系统 - Google Patents

卡盘工作台、多孔陶瓷吸引板的制造方法和吸引保持系统 Download PDF

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CN107803604A
CN107803604A CN201710767737.XA CN201710767737A CN107803604A CN 107803604 A CN107803604 A CN 107803604A CN 201710767737 A CN201710767737 A CN 201710767737A CN 107803604 A CN107803604 A CN 107803604A
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山本节男
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Abstract

提供卡盘工作台、多孔陶瓷吸引板的制造方法和吸引保持系统,即使载置在卡盘工作台上的被加工物的大小、形状发生改变也能够良好地保持被加工物。一种卡盘工作台,对板状被加工物进行吸引保持,其中,该卡盘工作台具有:吸引板,其由多孔陶瓷形成,具有多个通气孔;以及框体,其对该吸引板的除了吸附面之外的侧面和背面进行覆盖,并对该吸引板进行支承,该框体具有形成于上表面的多个吸引槽和将该吸引槽与吸引源连通的连通路,该多孔陶瓷吸引板的气孔率的体积比为60~70%,该多个通气孔的直径为10μm~25μm。

Description

卡盘工作台、多孔陶瓷吸引板的制造方法和吸引保持系统
技术领域
本发明涉及对被加工物的平面进行吸引保持的卡盘工作台、构成该卡盘工作台的多孔陶瓷吸引板的制造方法和吸引保持系统。
背景技术
通过磨削装置对由分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片的背面进行磨削,在形成为希望的厚度之后,对通过激光加工装置形成了分割起点的晶片施加外力而分割成各个器件,将这些器件应用在移动电话、个人计算机等电子设备中。
激光加工装置大致包含:卡盘工作台,其具有通气性,用于对晶片进行保持;激光光线照射单元,其照射对于吸引保持在该卡盘工作台的吸附面上的晶片具有透过性的波长的激光光线;X轴移动单元,其使该卡盘工作台和该激光光线照射单元相对地在X轴方向上移动;以及Y轴移动单元,其使该卡盘工作台和该激光光线照射单元相对地在Y轴方向上移动,该激光加工装置能够沿着晶片的分割预定线高精度地形成作为分割的起点的改质层(例如,参照专利文献1。)。
专利文献1:日本特许第3408805号公报
在以往的激光加工装置中,是以对作为被加工物的晶片进行吸引保持的卡盘工作台的吸附面的大小形成为与晶片的形状、尺寸相配而由该晶片覆盖该吸附面的整个面作为前提的。因此,将构成卡盘工作台的多孔陶瓷吸引板的气孔率和通气孔的大小设定成当在吸附面上什么都不载置的状态下吸引源的负荷尽量不变大,例如将卡盘工作台的内部空间的压力设定为0.9大气压左右。因此,即使为了将比该吸附面小的晶片载置并吸引保持在该吸附面上而使吸引源进行动作,但外部的空气会从未被该晶片覆盖的吸附面的外周部分大量被吸引至卡盘工作台的内部,实际上无法将晶片吸引保持在该吸附面上。因此,以往,在所加工的晶片的尺寸发生变更的情况下,每次都要花费工夫来更换具有与晶片的尺寸对应的直径的卡盘工作台,存在生产性较差的问题。进而,需要预先准备多个直径不同的卡盘工作台并进行保管,还存在管理较麻烦的问题。
该问题并不限于在激光加工装置中对晶片实施激光加工的情况,例如,在将晶片载置在卡盘工作台的吸附面上而对形成于晶片的正面的器件的好坏进行检查的检查装置中也会产生该问题。
发明内容
因此,本发明的目的在于,提供卡盘工作台、多孔陶瓷吸引板的制造方法和吸引保持系统,即使载置在卡盘工作台上的被加工物的大小、形状发生改变,也能够良好地进行吸引保持。
根据本发明的一个侧面,提供卡盘工作台,其对板状被加工物进行吸引保持,其中,该卡盘工作台具有:吸引板,其由多孔陶瓷形成,具有多个通气孔;以及框体,其对该吸引板的除了吸附面之外的侧面和背面进行覆盖,并对该吸引板进行支承,该框体具有形成于上表面的多个吸引槽和将该吸引槽与吸引源连通的连通路,该多孔陶瓷吸引板的气孔率按照体积比为60~70%,该多个通气孔的直径为10μm~25μm。
根据本发明的其他侧面,提供卡盘工作台,其对板状被加工物进行吸引保持,其中,该卡盘工作台具有:吸引板,其由多孔陶瓷形成,具有多个通气孔;以及框体,其具有形成于正面的多个吸引槽和将该吸引槽与吸引源连通的连通路,该框体对该吸引板的除了吸附面之外的侧面和背面进行覆盖,并对该吸引板进行支承,将该连通路经由吸引路与作为该吸引源的减压泵连接,在该吸引路上设置压力计,对该多孔陶瓷吸引板的气孔率和该多个通气孔的直径进行设定,以使得当在该吸引板的吸附面上什么都不载置的状态下使该减压泵进行动作时,该压力计的值为0.3大气压以上0.6大气压以下。
根据本发明的另一侧面,提供多孔陶瓷吸引板的制造方法,具有如下的工序:颗粒制造工序,将长石、陶土、黏土和滑石混合并利用球磨机进行粉碎,掺入浆料而制造出直径为200μm以下的颗粒;成形工序,对该颗粒进行冲压而成形为板状物;以及烧结工序,在800℃~1300℃的温度下对所成形的板状物进行烧结,制造出多孔陶瓷吸引板。
根据本发明的另一侧面,提供吸引保持系统,其对板状被加工物进行吸引保持,其中,该吸引保持系统具有:吸引板,其由多孔陶瓷形成,具有多个通气孔;框体,其具有形成于正面的多个吸引槽和以一端与该吸引槽连通的连通路,该框体对该吸引板的除了吸附面之外的侧面和背面进行覆盖,并对该吸引板进行支承;以及吸引源,其与该连通路的另一端连接,对该多孔陶瓷吸引板的气孔率、通气孔的直径和吸引源的压力进行设定,以使得当在该吸引板的吸附面上什么都不载置的状态下使该吸引源进行动作时,该连通路的压力成为能够维持利用该吸附面来吸引保持该板状被加工物的状态的压力。
本发明的卡盘工作台具有:吸引板,其由多孔陶瓷形成,具有通气孔;以及框体,其对该吸引板的除了吸附面之外的侧面和背面进行覆盖,以及连通路,其形成于该框体,与吸引源连通,该多孔陶瓷吸引板构成为具有即使要吸引保持的被加工物的平面的面积比该吸附面的面积小也能够对被加工物的平面进行吸引保持的通气孔,因此即使1张晶片的直径或形状发生改变,也能够对晶片进行保持而不用更换卡盘工作台,能够高效地执行晶片的加工或检查。并且,不需要准备直径不同的多个卡盘工作台,也解决了保管等管理较麻烦的问题。
附图说明
图1是作为应用了根据本发明而构成的卡盘工作台的装置的一例而示出的激光加工装置的整体立体图。
图2的(a)~(c)是示出在图1所示的激光加工装置中应用的卡盘工作台和支承基台的结构的立体图。
图3是用于对吸引保持系统进行说明的剖视图。
图4的(a)、(b)是用于对卡盘工作台的使用方式的例子进行说明的立体图。
标号说明
40:激光加工装置;41:基台;42:保持单元;43:移动单元;44:激光光线照射机构;50:拍摄单元;64:卡盘工作台;641:吸引板;67:支承基台;67a:凹部;67b:连通路;L:吸引路;P:吸引源;S:压力传感器。
具体实施方式
以下,参照附图对本发明的卡盘工作台、构成卡盘工作台的多孔陶瓷吸引板的制造方法以及吸引保持系统进行详细地说明。
作为使用了本发明的卡盘工作台的装置的一例,在图1中示出了标号40所示的激光加工装置的整体立体图。
激光加工装置40具有:基台41;保持单元42,其例如隔着保护带T对规定的大小的晶片进行保持;移动单元43,其使保持单元42进行移动;激光光线照射机构44,其对保持在保持单元42上的被加工物照射激光光线;以及拍摄单元50。
保持单元42包含:矩形的X方向可动板60,其以在图中箭头X所示的X方向上自由移动的方式搭载在基台41上;矩形的Y方向可动板61,其以在图中箭头Y所示的Y方向上自由移动的方式搭载在X方向可动板60上;圆筒状的支柱62,其固定在Y方向可动板61的上表面上;以及矩形的盖板63,其固定在支柱62的上端。在盖板63上配置有卡盘工作台64,该卡盘工作台64通过形成在该盖板63上的长孔而向上方延伸,对圆形的被加工物进行保持。卡盘工作台64配置在卡盘工作台基台67上,构成卡盘工作台64的吸附面的吸引板641经由通过支柱62的流路而与后述的吸引源连接。另外,X方向为图1中箭头X所示的方向,Y方向为图1中箭头Y所示的方向,是与X方向垂直的方向。
移动单元43包含X方向移动单元80和Y方向移动单元82。X方向移动单元80将电动机的旋转运动转换成直线运动而传递给X方向可动板60,使X方向可动板60沿着基台41上的导轨在X方向上进退。Y方向移动单元82将电动机的旋转运动转换成直线运动而传递给Y方向可动板61,使Y方向可动板61沿着X方向可动板60上的导轨在Y方向上进退。另外,虽然省略了图示,但在X方向移动单元80和Y方向移动单元82上分别配设有位置检测单元,通过各位置检测单元对卡盘工作台64的X方向的位置和Y方向的位置进行准确地检测,根据从未图示的控制单元指示的信号来驱动X方向移动单元80和Y方向移动单元82,能够将卡盘工作台64准确地定位在任意的位置。并且,拍摄单元50位于保持单元42的上方,能够通过使卡盘工作台64移动而对载置在卡盘工作台64上的晶片等被加工物进行拍摄。
能够使用上述的激光加工装置40对搬送到卡盘工作台64上的晶片实施激光加工。更具体来说,在卡盘工作台64的吸引板641上所保持的未图示的晶片上例如形成有对准标记,该对准标记表示形成有实施激光加工的分割预定线的方向,使用拍摄单元50对该对准标记进行拍摄,执行图案匹配等图像处理并进行对晶片相对于激光光线照射机构44的聚光器的相对位置和方向进行调整的对准,实施激光加工。另外,在通过该激光加工装置40来实施加工时,构成为该盖板63的沿X轴方向相邻的区域被能够随着卡盘工作台64的移动而伸长、收缩的波纹单元覆盖,以便粉尘、尘埃等不会进入到移动单元43的区域,但在图1中,为了方便本实施方式的说明,省略了该波纹单元等。
如在图2中放大示出的那样,上述卡盘工作台64具有:吸引板641,其由具有通气性的多孔性材料即多孔陶瓷构成;以及框体642,其由陶瓷构成,围绕吸引板641,对吸引板641的除了吸附面之外的侧面和背面进行覆盖(参照图2的(a)。),该卡盘工作台64隔开间隙而定位在由不锈钢(SUS)形成的支承基台67的上表面上(参照图2的(b)。)并进行一体化(参照图2的(c)。),从而配设在激光加工装置40上。如图2的(a)所示,在围绕吸引板641的该框体642的上表面上形成有对吸引板641的侧面进行覆盖的缘部642a,在吸引板641被保持于框体642的状态下,缘部642a的上表面和吸引板641的上表面形成为同一平面。并且,在框体642的对吸引板641进行支承的上表面侧形成有同心圆状的多个吸引槽642b和将各吸引槽642b连接的沿径向伸长的连接吸引槽642c。进而,在框体642的下表面侧的中央形成有与吸引源连通的连通路642d,该吸引源用于向由吸引板641和框体642形成的空间提供负压,在框体642的下表面侧形成有圆形的突出部642e(也同时参照图3。)。另外,框体642并不限定于由陶瓷形成,例如,也可以由不锈钢(SUS)形成。
在支承基台67的上表面中央形成有圆形的凹部67a,该凹部67a与向卡盘工作台64的下表面侧突出的突出部642e嵌合。在该凹部67a的中央形成有连通路67b,该连通路67b提供负压,该负压用于经由上述突出部642e的连通路642d对载置在吸引板641上的被加工物进行吸引。并且,在该凹部67a的底部除了该连通路67b之外还形成有吸引孔67c,该吸引孔67c用于对所嵌合的突出部642e的底面进行吸引而对卡盘工作台64进行吸引固定。如图3所示,连通路67b和吸引孔67c经由从吸引路L分支的副吸引路La、Lb而共同与由减压泵构成的吸引源P连接,从而构成了吸引保持系统。另外,在本实施方式中,如图3所示,在该吸引路L上设定有压力计S,该压力计S用于对包含连通路67b、吸引路L和副吸引路La、Lb的区域的压力进行计测。
这样构成的卡盘工作台64通过吸引源P将作为被加工物的例如圆盘状的半导体晶片吸引保持在吸引板641上,卡盘工作台64通过配设在圆筒部件62内的未图示的脉冲电动机而进行旋转。使用图3对至少根据卡盘工作台64、支承基台67和吸引源P而构成的吸引保持系统的作用进行进一步说明。
构成本发明的卡盘工作台64的吸引板641按照上述方式形成,例如,能够通过如下的制造方法来制造吸引板641,该制造方法至少包含如下工序:颗粒生成工序,将长石、陶土、黏土和滑石混合并利用球磨机进行粉碎,掺入甲基纤维素等浆料而生成直径为200μm以下的颗粒;成形工序,对该颗粒进行冲压而成形为板状物;以及烧结工序,在800~1300℃下对所成形的板状物进行烧结,生成多孔陶瓷。
通过上述那样的制造方法来制造吸引板641,由此,形成吸引板641的多孔陶瓷的气孔率成为按照体积比为60~70%,由该气孔构成的该通气孔的大小成为直径为10~25μm。并且,当在吸引板641的吸附面上什么都不载置的状态下使与卡盘工作台64连接的吸引源P进行动作的情况下,将配设于吸引路的压力计的压力值调整为比由以往的结构示出的值即0.9大气压小,更优选将其调整为示出0.3~0.6大气压的数值。
由于本发明按照以上那样构成,所以在对与该吸引板641相同形状、相同尺寸的半导体晶片进行载置的情况下当然没问题,即使在载置了图4的(a)所示的比该吸引板641小的晶片W1的情况下,以及在载置了图4的(b)所示的矩形形状的晶片W2的情况下,也不会在激光加工时产生任何障碍,能够良好地维持吸引保持状态。
虽然在图4的(a)和图4的(b)中,外部的空气从吸引板641的未载置晶片W1或W2的区域吸引至卡盘工作台的内部,但由于上述的实施方式的吸引板641将其气孔率和通气孔的直径设定为比以往的吸引板小,所以能够将卡盘工作台内部的负压维持为比以往大的负压,能够利用吸引板641对晶片W1或W2进行吸引保持。

Claims (4)

1.一种卡盘工作台,其对板状被加工物进行吸引保持,其中,
该卡盘工作台具有:
吸引板,其由多孔陶瓷形成,具有多个通气孔;以及
框体,其对该吸引板的除了吸附面之外的侧面和背面进行覆盖,并对该吸引板进行支承,该框体具有形成于上表面的多个吸引槽和将该吸引槽与吸引源连通的连通路,
该多孔陶瓷吸引板的气孔率按照体积比为60~70%,
该多个通气孔的直径为10μm~25μm。
2.一种卡盘工作台,其对板状被加工物进行吸引保持,其中,
该卡盘工作台具有:
吸引板,其由多孔陶瓷形成,具有多个通气孔;以及
框体,其具有形成于正面的多个吸引槽和将该吸引槽与吸引源连通的连通路,该框体对该吸引板的除了吸附面之外的侧面和背面进行覆盖,并对该吸引板进行支承,
将该连通路经由吸引路与作为该吸引源的减压泵连接,在该吸引路上设置压力计,对该多孔陶瓷吸引板的气孔率和该多个通气孔的直径进行设定,以使得当在该吸引板的吸附面上什么都不载置的状态下使该减压泵进行动作时,该压力计的值为0.3大气压以上0.6大气压以下。
3.一种多孔陶瓷吸引板的制造方法,具有如下的工序:
颗粒制造工序,将长石、陶土、黏土和滑石混合并利用球磨机进行粉碎,掺入浆料而制造出直径为200μm以下的颗粒;
成形工序,对该颗粒进行冲压而成形为板状物;以及
烧结工序,在800℃~1300℃的温度下对所成形的板状物进行烧结,制造出多孔陶瓷吸引板。
4.一种吸引保持系统,其对板状被加工物进行吸引保持,其中,
该吸引保持系统具有:
吸引板,其由多孔陶瓷形成,具有多个通气孔;
框体,其具有形成于正面的多个吸引槽和一端与该吸引槽连通的连通路,该框体对该吸引板的除了吸附面之外的侧面和背面进行覆盖,并对该吸引板进行支承;以及
吸引源,其与该连通路的另一端连接,
对该多孔陶瓷吸引板的气孔率、通气孔的直径和吸引源的压力进行设定,以使得当在该吸引板的吸附面上什么都不载置的状态下使该吸引源进行动作时,该连通路的压力成为能够维持利用该吸附面来吸引保持该板状被加工物的状态的压力。
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