CN1076498C - 自旋阀磁致电阻传感器以及使用此传感器的磁记录系统 - Google Patents
自旋阀磁致电阻传感器以及使用此传感器的磁记录系统 Download PDFInfo
- Publication number
- CN1076498C CN1076498C CN96110311A CN96110311A CN1076498C CN 1076498 C CN1076498 C CN 1076498C CN 96110311 A CN96110311 A CN 96110311A CN 96110311 A CN96110311 A CN 96110311A CN 1076498 C CN1076498 C CN 1076498C
- Authority
- CN
- China
- Prior art keywords
- layer
- ferromagnetic
- lamination
- film
- antiparallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 101
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 79
- 230000005415 magnetization Effects 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000008878 coupling Effects 0.000 claims abstract description 23
- 238000010168 coupling process Methods 0.000 claims abstract description 23
- 238000005859 coupling reaction Methods 0.000 claims abstract description 23
- 238000003475 lamination Methods 0.000 claims description 58
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 26
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 22
- 230000005303 antiferromagnetism Effects 0.000 claims description 18
- 229910002551 Fe-Mn Inorganic materials 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 13
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 8
- 239000002885 antiferromagnetic material Substances 0.000 claims description 7
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 238000007885 magnetic separation Methods 0.000 claims 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000005290 antiferromagnetic effect Effects 0.000 abstract description 36
- 238000005260 corrosion Methods 0.000 abstract description 13
- 230000007797 corrosion Effects 0.000 abstract description 9
- 230000005284 excitation Effects 0.000 abstract description 3
- 239000011651 chromium Substances 0.000 description 12
- 239000011572 manganese Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 239000000725 suspension Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WNEODWDFDXWOLU-QHCPKHFHSA-N 3-[3-(hydroxymethyl)-4-[1-methyl-5-[[5-[(2s)-2-methyl-4-(oxetan-3-yl)piperazin-1-yl]pyridin-2-yl]amino]-6-oxopyridin-3-yl]pyridin-2-yl]-7,7-dimethyl-1,2,6,8-tetrahydrocyclopenta[3,4]pyrrolo[3,5-b]pyrazin-4-one Chemical compound C([C@@H](N(CC1)C=2C=NC(NC=3C(N(C)C=C(C=3)C=3C(=C(N4C(C5=CC=6CC(C)(C)CC=6N5CC4)=O)N=CC=3)CO)=O)=CC=2)C)N1C1COC1 WNEODWDFDXWOLU-QHCPKHFHSA-N 0.000 description 1
- 101000588924 Anthopleura elegantissima Delta-actitoxin-Ael1a Proteins 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 206010019133 Hangover Diseases 0.000 description 1
- 101000619542 Homo sapiens E3 ubiquitin-protein ligase parkin Proteins 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005316 antiferromagnetic exchange Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 102000045222 parkin Human genes 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49732495A | 1995-06-30 | 1995-06-30 | |
US497324 | 1995-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1153371A CN1153371A (zh) | 1997-07-02 |
CN1076498C true CN1076498C (zh) | 2001-12-19 |
Family
ID=23976401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96110311A Expired - Fee Related CN1076498C (zh) | 1995-06-30 | 1996-06-08 | 自旋阀磁致电阻传感器以及使用此传感器的磁记录系统 |
Country Status (9)
Country | Link |
---|---|
US (1) | US5701223A (zh) |
EP (1) | EP0751499B1 (zh) |
JP (1) | JP3180027B2 (zh) |
KR (1) | KR100261385B1 (zh) |
CN (1) | CN1076498C (zh) |
DE (1) | DE69611326T2 (zh) |
MY (1) | MY114553A (zh) |
SG (1) | SG46731A1 (zh) |
TW (1) | TW330285B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100423313C (zh) * | 2003-02-24 | 2008-10-01 | 日立环球储存科技荷兰有限公司 | 具有在被钉扎层中含半金属铁磁性哈斯勒合金的交换耦合结构的磁电阻器件 |
Families Citing this family (145)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6055135A (en) * | 1996-03-25 | 2000-04-25 | Alps Electric Co., Ltd. | Exchange coupling thin film and magnetoresistive element comprising the same |
JPH10241123A (ja) * | 1997-02-28 | 1998-09-11 | Nec Corp | 磁気抵抗効果ヘッド |
JP2970590B2 (ja) * | 1997-05-14 | 1999-11-02 | 日本電気株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
US5871622A (en) * | 1997-05-23 | 1999-02-16 | International Business Machines Corporation | Method for making a spin valve magnetoresistive sensor |
US6061210A (en) * | 1997-09-22 | 2000-05-09 | International Business Machines Corporation | Antiparallel pinned spin valve with high magnetic stability |
EP1134815A3 (en) * | 1997-09-29 | 2001-10-31 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, and method for producing the same |
US6040961A (en) * | 1997-10-27 | 2000-03-21 | International Business Machines Corporation | Current-pinned, current resettable soft AP-pinned spin valve sensor |
US5898549A (en) * | 1997-10-27 | 1999-04-27 | International Business Machines Corporation | Anti-parallel-pinned spin valve sensor with minimal pinned layer shunting |
US6038107A (en) * | 1997-10-27 | 2000-03-14 | International Business Machines Corporation | Antiparallel-pinned spin valve sensor |
US6245450B1 (en) | 1997-11-17 | 2001-06-12 | Matsushita Electric Industrial Co., Ltd. | Exchange coupling film magnetoresistance effect device magnetoresistance effective head and method for producing magnetoresistance effect device |
US6141191A (en) * | 1997-12-05 | 2000-10-31 | International Business Machines Corporation | Spin valves with enhanced GMR and thermal stability |
US6175477B1 (en) * | 1997-12-05 | 2001-01-16 | International Business Machines Corporation | Spin valve sensor with nonmagnetic oxide seed layer |
US6261681B1 (en) | 1998-03-20 | 2001-07-17 | Asahi Komag Co., Ltd. | Magnetic recording medium |
JPH11296823A (ja) * | 1998-04-09 | 1999-10-29 | Nec Corp | 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果センサ,磁気記録システム |
US6269027B1 (en) * | 1998-04-14 | 2001-07-31 | Honeywell, Inc. | Non-volatile storage latch |
US6738236B1 (en) | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
US6191926B1 (en) * | 1998-05-07 | 2001-02-20 | Seagate Technology Llc | Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer |
US6063244A (en) * | 1998-05-21 | 2000-05-16 | International Business Machines Corporation | Dual chamber ion beam sputter deposition system |
US6313973B1 (en) | 1998-06-30 | 2001-11-06 | Kabushiki Kaisha Toshiba | Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same |
US7738220B1 (en) * | 1998-06-30 | 2010-06-15 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system |
US6221172B1 (en) | 1998-07-21 | 2001-04-24 | Alps Electric Co., Inc. | Manufacturing method of spin-valve magnetoresistive thin film element |
US6195240B1 (en) | 1998-07-31 | 2001-02-27 | International Business Machines Corporation | Spin valve head with diffusion barrier |
US6175476B1 (en) | 1998-08-18 | 2001-01-16 | Read-Rite Corporation | Synthetic spin-valve device having high resistivity anti parallel coupling layer |
US6278594B1 (en) | 1998-10-13 | 2001-08-21 | Storage Technology Corporation | Dual element magnetoresistive read head with integral element stabilization |
US6122150A (en) | 1998-11-09 | 2000-09-19 | International Business Machines Corporation | Antiparallel (AP) pinned spin valve sensor with giant magnetoresistive (GMR) enhancing layer |
US6181534B1 (en) | 1998-11-09 | 2001-01-30 | International Business Machines Corporation | Antiparallel (AP) pinned spin valve sensor with specular reflection of conduction electrons |
US6201671B1 (en) | 1998-12-04 | 2001-03-13 | International Business Machines Corporation | Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor |
US6633464B2 (en) | 1998-12-09 | 2003-10-14 | Read-Rite Corporation | Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system |
US6185077B1 (en) | 1999-01-06 | 2001-02-06 | Read-Rite Corporation | Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure |
US6587315B1 (en) | 1999-01-20 | 2003-07-01 | Alps Electric Co., Ltd. | Magnetoresistive-effect device with a magnetic coupling junction |
JP3703348B2 (ja) | 1999-01-27 | 2005-10-05 | アルプス電気株式会社 | スピンバルブ型薄膜素子とそのスピンバルブ型薄膜素子を備えた薄膜磁気ヘッド |
JP3212567B2 (ja) * | 1999-01-27 | 2001-09-25 | アルプス電気株式会社 | 磁気抵抗効果型薄膜磁気素子を備えた薄膜磁気ヘッドおよびその製造方法 |
US6351355B1 (en) * | 1999-02-09 | 2002-02-26 | Read-Rite Corporation | Spin valve device with improved thermal stability |
US6469878B1 (en) | 1999-02-11 | 2002-10-22 | Seagate Technology Llc | Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation |
US6181533B1 (en) | 1999-02-19 | 2001-01-30 | Seagate Technology Llc | Simultaneous fixation of the magnetization direction in a dual GMR sensor's pinned layers |
JP2000285413A (ja) * | 1999-03-26 | 2000-10-13 | Fujitsu Ltd | スピンバルブ磁気抵抗効果型素子とその製造法、及びこの素子を用いた磁気ヘッド |
US6282068B1 (en) * | 1999-03-30 | 2001-08-28 | International Business Machines Corporation | Antiparallel (AP) pinned read head with improved GMR |
US6201673B1 (en) | 1999-04-02 | 2001-03-13 | Read-Rite Corporation | System for biasing a synthetic free layer in a magnetoresistance sensor |
US6331773B1 (en) | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
WO2000065578A1 (en) * | 1999-04-28 | 2000-11-02 | Seagate Technology Llc | Giant magnetoresistive sensor with pinning layer |
JP3575672B2 (ja) * | 1999-05-26 | 2004-10-13 | Tdk株式会社 | 磁気抵抗効果膜及び磁気抵抗効果素子 |
US6689495B1 (en) | 1999-06-08 | 2004-02-10 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
US6753101B1 (en) | 1999-06-08 | 2004-06-22 | Fujitsu Limited | Magnetic recording medium, magnetic storage apparatus, recording method and method of producing magnetic recording medium |
US6602612B2 (en) | 1999-06-08 | 2003-08-05 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
US6821652B1 (en) | 1999-06-08 | 2004-11-23 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
US6645646B1 (en) | 1999-06-08 | 2003-11-11 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
US6469877B1 (en) | 1999-06-15 | 2002-10-22 | Read-Rite Corporation | Spin valve device with improved exchange layer defined track width and method of fabrication |
US6226159B1 (en) * | 1999-06-25 | 2001-05-01 | International Business Machines Corporation | Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors |
US6219208B1 (en) | 1999-06-25 | 2001-04-17 | International Business Machines Corporation | Dual spin valve sensor with self-pinned layer specular reflector |
US6398924B1 (en) * | 1999-06-29 | 2002-06-04 | International Business Machines Corporation | Spin valve sensor with improved pinning field between nickel oxide (NiO) pinning layer and pinned layer |
US6295187B1 (en) | 1999-06-29 | 2001-09-25 | International Business Machines Corporation | Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer |
US6687098B1 (en) | 1999-07-08 | 2004-02-03 | Western Digital (Fremont), Inc. | Top spin valve with improved seed layer |
US6356419B1 (en) * | 1999-07-23 | 2002-03-12 | International Business Machines Corporation | Antiparallel pinned read sensor with improved magnetresistance |
US6286200B1 (en) | 1999-07-23 | 2001-09-11 | International Business Machines Corporation | Dual mask process for making second pole piece layer of write head with high resolution narrow track width second pole tip |
US6252750B1 (en) * | 1999-07-23 | 2001-06-26 | International Business Machines Corporation | Read head with file resettable double antiparallel (AP) pinned spin valve sensor |
DE19936896C1 (de) * | 1999-07-29 | 2001-03-29 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung von nm-dicken antiferromagnetischen oder pinnenden Schichten und Verwendungen derartig hergestellter Schichten |
US6219210B1 (en) | 1999-07-30 | 2001-04-17 | International Business Machines Corporation | Spin valve sensor with nickel oxide pinning layer on a chromium seed layer |
US6428657B1 (en) * | 1999-08-04 | 2002-08-06 | International Business Machines Corporation | Magnetic read head sensor with a reactively sputtered pinning layer structure |
WO2001024170A1 (fr) | 1999-09-29 | 2001-04-05 | Fujitsu Limited | Tete a effet de resistance magnetique et dispositif de reproduction d'informations |
US6292336B1 (en) | 1999-09-30 | 2001-09-18 | Headway Technologies, Inc. | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient |
US6590751B1 (en) | 1999-09-30 | 2003-07-08 | Headway Technologies, Inc. | Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient |
US6455177B1 (en) * | 1999-10-05 | 2002-09-24 | Seagate Technology Llc | Stabilization of GMR devices |
US6519117B1 (en) | 1999-12-06 | 2003-02-11 | International Business Machines Corporation | Dual AP pinned GMR head with offset layer |
US6178111B1 (en) | 1999-12-07 | 2001-01-23 | Honeywell Inc. | Method and apparatus for writing data states to non-volatile storage devices |
US6388847B1 (en) | 2000-02-01 | 2002-05-14 | Headway Technologies, Inc. | Specular spin valve with robust pinned layer |
US6407890B1 (en) | 2000-02-08 | 2002-06-18 | International Business Machines Corporation | Dual spin valve sensor read head with a specular reflector film embedded in each antiparallel (AP) pinned layer next to a spacer layer |
US6466418B1 (en) | 2000-02-11 | 2002-10-15 | Headway Technologies, Inc. | Bottom spin valves with continuous spacer exchange (or hard) bias |
US6396671B1 (en) | 2000-03-15 | 2002-05-28 | Headway Technologies, Inc. | Ruthenium bias compensation layer for spin valve head and process of manufacturing |
US6496337B1 (en) | 2000-03-20 | 2002-12-17 | Headway Technologies, Inc. | Copper alloy GMR recording head |
US6522507B1 (en) | 2000-05-12 | 2003-02-18 | Headway Technologies, Inc. | Single top spin valve heads for ultra-high recording density |
JP2001358381A (ja) * | 2000-06-14 | 2001-12-26 | Fujitsu Ltd | 磁気抵抗効果膜、磁気抵抗効果型ヘッド、および情報再生装置 |
JP2003536267A (ja) | 2000-06-21 | 2003-12-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改善された磁場範囲を有する磁気多層構造 |
US6396733B1 (en) | 2000-07-17 | 2002-05-28 | Micron Technology, Inc. | Magneto-resistive memory having sense amplifier with offset control |
US6661622B1 (en) * | 2000-07-17 | 2003-12-09 | International Business Machines Corporation | Method to achieve low and stable ferromagnetic coupling field |
US6493258B1 (en) | 2000-07-18 | 2002-12-10 | Micron Technology, Inc. | Magneto-resistive memory array |
US6562487B1 (en) | 2000-07-28 | 2003-05-13 | Seagate Technology Llc | Writer pole employing a high saturation moment, low permeability layer adjacent to writer gap |
EP1187103A3 (en) * | 2000-08-04 | 2003-01-08 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, head, and memory element |
US6724654B1 (en) | 2000-08-14 | 2004-04-20 | Micron Technology, Inc. | Pulsed write techniques for magneto-resistive memories |
US6493259B1 (en) | 2000-08-14 | 2002-12-10 | Micron Technology, Inc. | Pulse write techniques for magneto-resistive memories |
US6363007B1 (en) | 2000-08-14 | 2002-03-26 | Micron Technology, Inc. | Magneto-resistive memory with shared wordline and sense line |
US6580589B1 (en) | 2000-10-06 | 2003-06-17 | International Business Machines Corporation | Pinned layer structure for a spin valve sensor having cobalt iron (CoFe) and cobalt iron oxide (CoFeO) laminated layers |
JP2002117508A (ja) | 2000-10-06 | 2002-04-19 | Hitachi Ltd | 磁気ヘッドおよびその製造方法 |
US6714389B1 (en) * | 2000-11-01 | 2004-03-30 | Seagate Technology Llc | Digital magnetoresistive sensor with bias |
US6764778B2 (en) | 2000-11-01 | 2004-07-20 | Alps Electric Co., Ltd. | Thin film magnetic element with accurately controllable track width and method of manufacturing the same |
US6778357B2 (en) | 2000-11-10 | 2004-08-17 | Seagate Technology Llc | Electrodeposited high-magnetic-moment material at writer gap pole |
JPWO2002045081A1 (ja) * | 2000-11-29 | 2004-04-15 | 富士通株式会社 | 磁気記録媒体及び磁気記憶装置 |
JP3848079B2 (ja) | 2000-12-07 | 2006-11-22 | 富士通株式会社 | 磁気記録媒体及び磁気記録装置 |
US6700757B2 (en) | 2001-01-02 | 2004-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | Enhanced free layer for a spin valve sensor |
US6473279B2 (en) | 2001-01-04 | 2002-10-29 | International Business Machines Corporation | In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads |
US6689497B1 (en) | 2001-01-08 | 2004-02-10 | Seagate Technology Llc | Stabilized AFC magnetic recording media with reduced lattice mismatch between spacer layer(s) and magnetic layers |
US6721146B2 (en) | 2001-03-14 | 2004-04-13 | International Business Machines Corporation | Magnetic recording GMR read back sensor and method of manufacturing |
US6791805B2 (en) * | 2001-05-03 | 2004-09-14 | Seagate Technology Llc | Current-perpendicular-to-plane spin valve reader with reduced scattering of majority spin electrons |
DE10128150C1 (de) * | 2001-06-11 | 2003-01-23 | Siemens Ag | Magnetoresistives Sensorsystem |
JP2002367124A (ja) * | 2001-06-13 | 2002-12-20 | Hitachi Ltd | スピンバルブ型磁気ヘッド |
US20030002232A1 (en) * | 2001-06-29 | 2003-01-02 | Storage Technology Corporation | Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux carrying capacity is increased |
US20030002231A1 (en) * | 2001-06-29 | 2003-01-02 | Dee Richard Henry | Reduced sensitivity spin valve head for magnetic tape applications |
JP2003031867A (ja) | 2001-07-17 | 2003-01-31 | Hitachi Ltd | 酸化物磁性層と金属磁性膜を積層した磁気抵抗効果素子 |
JP2003067904A (ja) * | 2001-08-28 | 2003-03-07 | Hitachi Ltd | 磁気抵抗効果型磁気ヘッドおよびその製造方法 |
US6581272B1 (en) * | 2002-01-04 | 2003-06-24 | Headway Technologies, Inc. | Method for forming a bottom spin valve magnetoresistive sensor element |
US6865062B2 (en) | 2002-03-21 | 2005-03-08 | International Business Machines Corporation | Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer |
US6856493B2 (en) | 2002-03-21 | 2005-02-15 | International Business Machines Corporation | Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer |
US6751072B2 (en) | 2002-03-21 | 2004-06-15 | Hitachi Global Storage Technologies Netherlands B.V. | High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure |
US6741432B2 (en) | 2002-03-21 | 2004-05-25 | International Business Machines Corporation | Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structure |
US6857180B2 (en) * | 2002-03-22 | 2005-02-22 | Headway Technologies, Inc. | Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor |
US6811890B1 (en) | 2002-04-08 | 2004-11-02 | Maxtor Corporation | Intermediate layer for antiferromagnetically exchange coupled media |
US6857937B2 (en) | 2002-05-30 | 2005-02-22 | Komag, Inc. | Lapping a head while powered up to eliminate expansion of the head due to heating |
US7119990B2 (en) * | 2002-05-30 | 2006-10-10 | Komag, Inc. | Storage device including a center tapped write transducer |
US7426097B2 (en) * | 2002-07-19 | 2008-09-16 | Honeywell International, Inc. | Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces |
US6714441B1 (en) * | 2002-09-17 | 2004-03-30 | Micron Technology, Inc. | Bridge-type magnetic random access memory (MRAM) latch |
US7123451B2 (en) * | 2002-09-25 | 2006-10-17 | Tdk Corporation | Thin-film magnetic head for reading magnetic information on a hard disk by utilizing a magnetoresistance effect |
CN100369117C (zh) * | 2002-12-31 | 2008-02-13 | 有研稀土新材料股份有限公司 | 一种氧化物巨磁电阻自旋阀及包含其的设备 |
FR2852399B1 (fr) * | 2003-03-14 | 2005-07-15 | Roulements Soc Nouvelle | Capteur magnetoriesistif comprenant un element sensible ferromagnetique/antiferromagnetique |
JP2004296000A (ja) * | 2003-03-27 | 2004-10-21 | Hitachi Ltd | 磁気抵抗効果型ヘッド、及びその製造方法 |
KR100522943B1 (ko) * | 2003-04-25 | 2005-10-25 | 학교법인고려중앙학원 | 소자 크기 변화에 무관하게 작고 안정한 바이어스 자기장을 갖는 자기 저항 구조 |
US7592079B1 (en) | 2003-07-03 | 2009-09-22 | Seagate Technology Llc | Method to improve remanence-squareness-thickness-product and coercivity profiles in magnetic media |
US20050013059A1 (en) * | 2003-07-15 | 2005-01-20 | International Business Machines Corporation | Magnetoresistive sensor with a net magnetic moment |
US7145755B2 (en) * | 2003-09-30 | 2006-12-05 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor having one of two AP pinned layers made of cobalt |
US7173796B2 (en) * | 2003-09-30 | 2007-02-06 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve with a capping layer comprising an oxidized cobalt layer and method of forming same |
JP2005123412A (ja) * | 2003-10-16 | 2005-05-12 | Anelva Corp | 磁気抵抗多層膜製造方法及び製造装置 |
US7151653B2 (en) * | 2004-02-18 | 2006-12-19 | Hitachi Global Technologies Netherlands B.V. | Depositing a pinned layer structure in a self-pinned spin valve |
US7199986B2 (en) * | 2004-02-18 | 2007-04-03 | Hitachi Global Storage Technologies | Magnetoresistive sensor with decoupled hard bias multilayers |
US7339818B2 (en) | 2004-06-04 | 2008-03-04 | Micron Technology, Inc. | Spintronic devices with integrated transistors |
US6870711B1 (en) | 2004-06-08 | 2005-03-22 | Headway Technologies, Inc. | Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices |
US7446982B2 (en) * | 2004-07-01 | 2008-11-04 | Hitachi Global Storage Technologies Netherlands B.V. | Pinning structure with trilayer pinned layer |
US7289304B2 (en) * | 2004-10-29 | 2007-10-30 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure |
US20060146452A1 (en) * | 2005-01-04 | 2006-07-06 | Min Li | CIP GMR enhanced by using inverse GMR material in AP2 |
US7612970B2 (en) * | 2005-02-23 | 2009-11-03 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor with a free layer stabilized by direct coupling to in stack antiferromagnetic layer |
US7554775B2 (en) * | 2005-02-28 | 2009-06-30 | Hitachi Global Storage Technologies Netherlands B.V. | GMR sensors with strongly pinning and pinned layers |
US7443638B2 (en) * | 2005-04-22 | 2008-10-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Magnetoresistive structures and fabrication methods |
JP4521316B2 (ja) * | 2005-05-26 | 2010-08-11 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置 |
JP4466487B2 (ja) * | 2005-06-27 | 2010-05-26 | Tdk株式会社 | 磁気センサおよび電流センサ |
JP4694332B2 (ja) * | 2005-09-29 | 2011-06-08 | ヒタチグローバルストレージテクノロジーズネザーランドビーブイ | 磁気抵抗効果型磁気ヘッド及び複合型磁気ヘッド |
US8582252B2 (en) * | 2005-11-02 | 2013-11-12 | Seagate Technology Llc | Magnetic layer with grain refining agent |
JP4764294B2 (ja) * | 2006-09-08 | 2011-08-31 | 株式会社東芝 | 磁気抵抗効果素子、及び磁気ヘッド |
JP4673274B2 (ja) | 2006-09-11 | 2011-04-20 | ヒタチグローバルストレージテクノロジーズネザーランドビーブイ | 外部ストレス耐性の高い磁気抵抗効果型ヘッド |
JP4496189B2 (ja) * | 2006-09-28 | 2010-07-07 | 株式会社東芝 | 磁気抵抗効果型素子および磁気抵抗効果型ランダムアクセスメモリ |
US8514524B2 (en) * | 2008-05-09 | 2013-08-20 | Headway Technologies, Inc. | Stabilized shields for magnetic recording heads |
US9496489B2 (en) | 2014-05-21 | 2016-11-15 | Avalanche Technology, Inc. | Magnetic random access memory with multilayered seed structure |
US10050083B2 (en) | 2014-05-21 | 2018-08-14 | Avalanche Technology, Inc. | Magnetic structure with multilayered seed |
US10347691B2 (en) | 2014-05-21 | 2019-07-09 | Avalanche Technology, Inc. | Magnetic memory element with multilayered seed structure |
US10438997B2 (en) | 2014-05-21 | 2019-10-08 | Avalanche Technology, Inc. | Multilayered seed structure for magnetic memory element including a CoFeB seed layer |
CN104992716B (zh) * | 2015-07-03 | 2019-04-02 | 河南科技大学 | 一种无磁锻炼效应交换偏置体系的制备方法 |
US10115418B2 (en) | 2016-11-21 | 2018-10-30 | Headway Technologies, Inc. | Hard magnet stabilized shield for double (2DMR) or triple (3DMR) dimension magnetic reader structures |
EP3333646A1 (fr) * | 2016-12-06 | 2018-06-13 | ETA SA Manufacture Horlogère Suisse | Objet portable comprenant une tige de commande rotative dont l'actionnement est détecté au moyen de deux capteurs inductifs |
DE102019126320B4 (de) * | 2019-09-30 | 2024-03-28 | Infineon Technologies Ag | Magnetoresistiver Sensor und Fertigungsverfahren für einen magnetoresistiven Sensor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408377A (en) * | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5315468A (en) * | 1992-07-28 | 1994-05-24 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
US5422571A (en) * | 1993-02-08 | 1995-06-06 | International Business Machines Corporation | Magnetoresistive spin valve sensor having a nonmagnetic back layer |
US5343422A (en) * | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
US5465185A (en) * | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
-
1996
- 1996-05-02 SG SG1996009674A patent/SG46731A1/en unknown
- 1996-05-22 TW TW085106058A patent/TW330285B/zh not_active IP Right Cessation
- 1996-06-07 MY MYPI96002319A patent/MY114553A/en unknown
- 1996-06-08 CN CN96110311A patent/CN1076498C/zh not_active Expired - Fee Related
- 1996-06-12 JP JP15082696A patent/JP3180027B2/ja not_active Expired - Fee Related
- 1996-06-13 EP EP96304421A patent/EP0751499B1/en not_active Expired - Lifetime
- 1996-06-13 DE DE69611326T patent/DE69611326T2/de not_active Expired - Fee Related
- 1996-07-01 KR KR1019960026632A patent/KR100261385B1/ko not_active IP Right Cessation
- 1996-08-23 US US08/697,396 patent/US5701223A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408377A (en) * | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100423313C (zh) * | 2003-02-24 | 2008-10-01 | 日立环球储存科技荷兰有限公司 | 具有在被钉扎层中含半金属铁磁性哈斯勒合金的交换耦合结构的磁电阻器件 |
Also Published As
Publication number | Publication date |
---|---|
KR970002377A (ko) | 1997-01-24 |
DE69611326D1 (de) | 2001-02-01 |
EP0751499A1 (en) | 1997-01-02 |
KR100261385B1 (ko) | 2000-07-01 |
JPH0916920A (ja) | 1997-01-17 |
EP0751499B1 (en) | 2000-12-27 |
MY114553A (en) | 2002-11-30 |
US5701223A (en) | 1997-12-23 |
JP3180027B2 (ja) | 2001-06-25 |
SG46731A1 (en) | 1998-02-20 |
DE69611326T2 (de) | 2001-05-31 |
CN1153371A (zh) | 1997-07-02 |
TW330285B (en) | 1998-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1076498C (zh) | 自旋阀磁致电阻传感器以及使用此传感器的磁记录系统 | |
US6023395A (en) | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing | |
US6340520B1 (en) | Giant magnetoresistive material film, method of producing the same magnetic head using the same | |
US5465185A (en) | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor | |
US5989690A (en) | Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device | |
US6947264B2 (en) | Self-pinned in-stack bias structure for magnetoresistive read heads | |
KR100288466B1 (ko) | 자기저항효과소자와이를이용한자기저항효과형헤드,기억소자및증폭소자 | |
US6992866B2 (en) | Exchange-coupled magnetoresistive sensor with a coercive ferrite layer and an oxide underlayer having a spinal lattice structure | |
US6292336B1 (en) | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient | |
KR100462926B1 (ko) | 스핀터널 자기저항효과막과 소자 및 이를 사용한 자기저항센서 및 자기 장치와 그 제조방법 | |
US6295186B1 (en) | Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias | |
US6005753A (en) | Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias | |
JP2933056B2 (ja) | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム | |
EP0622781B1 (en) | Granular multilayer magnetoresistive sensor | |
US7505235B2 (en) | Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device | |
US20020167766A1 (en) | Magnetoresistive element and device utilizing magnetoresistance effect | |
US6510031B1 (en) | Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions | |
US4800457A (en) | Magnetoresistive sensor element | |
US6256222B1 (en) | Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same | |
US8670218B1 (en) | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with hard magnet biasing structure having a MgO insulating layer | |
JPH10188235A (ja) | 磁気抵抗効果膜及びその製造方法 | |
US20080007877A1 (en) | Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory | |
JP2010098137A (ja) | 磁気抵抗効果素子、磁気ヘッド、情報記憶装置、および磁気メモリ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI GST Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINE CORP. Effective date: 20040112 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040112 Address after: Amsterdam Patentee after: Hitachi Global Storage Tech Address before: American New York Patentee before: International Business Machines Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20011219 Termination date: 20100608 |