CN107579044B - 探测状况的方法以及相关的装置 - Google Patents

探测状况的方法以及相关的装置 Download PDF

Info

Publication number
CN107579044B
CN107579044B CN201710534660.1A CN201710534660A CN107579044B CN 107579044 B CN107579044 B CN 107579044B CN 201710534660 A CN201710534660 A CN 201710534660A CN 107579044 B CN107579044 B CN 107579044B
Authority
CN
China
Prior art keywords
substrate
plasma
infrared radiation
cutting
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710534660.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN107579044A (zh
Inventor
奥立佛·J·安塞尔
戴维·A·托塞尔
马丁·哈尼辛克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Publication of CN107579044A publication Critical patent/CN107579044A/zh
Application granted granted Critical
Publication of CN107579044B publication Critical patent/CN107579044B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
CN201710534660.1A 2016-07-04 2017-07-03 探测状况的方法以及相关的装置 Active CN107579044B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1611652.7 2016-07-04
GBGB1611652.7A GB201611652D0 (en) 2016-07-04 2016-07-04 Method of detecting a condition

Publications (2)

Publication Number Publication Date
CN107579044A CN107579044A (zh) 2018-01-12
CN107579044B true CN107579044B (zh) 2022-12-27

Family

ID=56891252

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710534660.1A Active CN107579044B (zh) 2016-07-04 2017-07-03 探测状况的方法以及相关的装置

Country Status (7)

Country Link
US (1) US10366899B2 (https=)
EP (1) EP3267465B1 (https=)
JP (1) JP6837395B2 (https=)
KR (1) KR102165795B1 (https=)
CN (1) CN107579044B (https=)
GB (1) GB201611652D0 (https=)
TW (1) TWI713757B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
US10636686B2 (en) 2018-02-27 2020-04-28 Lam Research Corporation Method monitoring chamber drift
JP2020072141A (ja) * 2018-10-30 2020-05-07 株式会社ディスコ プラズマエッチング装置及びウェーハの加工方法
CN110729186A (zh) * 2019-10-24 2020-01-24 东莞记忆存储科技有限公司 一种晶圆切割及分离的加工工艺方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1569939A (en) * 1976-09-13 1980-06-25 Northern Telecom Ltd End point control in plasma etching
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
CN1898547A (zh) * 2003-10-28 2007-01-17 兰姆研究有限公司 用于蚀刻终点检测的方法和设备
CN101081459A (zh) * 2007-06-29 2007-12-05 华中科技大学 三维激光焊接和切割过程的实时监测装置
CN101419996A (zh) * 2008-12-04 2009-04-29 中国电子科技集团公司第十三研究所 红外—紫外多色探测器及其制备方法
CN103703545A (zh) * 2011-06-15 2014-04-02 应用材料公司 使用基板载具的混合激光与等离子体蚀刻晶圆切割
CN104285500A (zh) * 2012-05-08 2015-01-14 剑桥Cmos传感器有限公司 红外线发射器与ndir传感器
CN104821289A (zh) * 2011-03-14 2015-08-05 等离子瑟姆有限公司 用于对基板进行等离子切割的方法
WO2015134111A1 (en) * 2014-03-07 2015-09-11 Plasma-Therm, Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN205004319U (zh) * 2014-06-04 2016-01-27 菲力尔系统公司 半导体设备、红外探测器、摄像机、电子设备和系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190728A (ja) 1986-02-18 1987-08-20 Nippon Telegr & Teleph Corp <Ntt> エツチング終点モニタ法および装置
JPH04206927A (ja) 1990-11-30 1992-07-28 Tokuda Seisakusho Ltd エッチング装置
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US7507638B2 (en) * 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
US7560007B2 (en) * 2006-09-11 2009-07-14 Lam Research Corporation In-situ wafer temperature measurement and control
US7946759B2 (en) * 2007-02-16 2011-05-24 Applied Materials, Inc. Substrate temperature measurement by infrared transmission
US8557682B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
CA2918687C (en) 2013-07-18 2020-04-14 Fasetto, Inc. System and method for multi-angle videos
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US9034771B1 (en) * 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
SG10201903242QA (en) 2014-10-13 2019-05-30 Utac Headquarters Pte Ltd Methods for singulating semiconductor wafer

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1569939A (en) * 1976-09-13 1980-06-25 Northern Telecom Ltd End point control in plasma etching
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
CN1898547A (zh) * 2003-10-28 2007-01-17 兰姆研究有限公司 用于蚀刻终点检测的方法和设备
CN101081459A (zh) * 2007-06-29 2007-12-05 华中科技大学 三维激光焊接和切割过程的实时监测装置
CN101419996A (zh) * 2008-12-04 2009-04-29 中国电子科技集团公司第十三研究所 红外—紫外多色探测器及其制备方法
CN104821289A (zh) * 2011-03-14 2015-08-05 等离子瑟姆有限公司 用于对基板进行等离子切割的方法
CN103703545A (zh) * 2011-06-15 2014-04-02 应用材料公司 使用基板载具的混合激光与等离子体蚀刻晶圆切割
CN104285500A (zh) * 2012-05-08 2015-01-14 剑桥Cmos传感器有限公司 红外线发射器与ndir传感器
WO2015134111A1 (en) * 2014-03-07 2015-09-11 Plasma-Therm, Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN205004319U (zh) * 2014-06-04 2016-01-27 菲力尔系统公司 半导体设备、红外探测器、摄像机、电子设备和系统

Also Published As

Publication number Publication date
US20180005837A1 (en) 2018-01-04
TW201812831A (zh) 2018-04-01
US10366899B2 (en) 2019-07-30
JP6837395B2 (ja) 2021-03-03
JP2018006758A (ja) 2018-01-11
TWI713757B (zh) 2020-12-21
KR102165795B1 (ko) 2020-10-14
CN107579044A (zh) 2018-01-12
GB201611652D0 (en) 2016-08-17
EP3267465A1 (en) 2018-01-10
KR20180004663A (ko) 2018-01-12
EP3267465B1 (en) 2019-11-27

Similar Documents

Publication Publication Date Title
CN107579044B (zh) 探测状况的方法以及相关的装置
TWI481297B (zh) 控制空間溫度分布之方法及裝置
JP6165635B2 (ja) 半導体ウェーハをプラズマ・ダイシングする方法及び装置
KR101895637B1 (ko) 반도체 제작 중 플라즈마 구성성분 플럭스 및 증착 제어 방법, 및 그를 구현하기 위한 장치
TWI469178B (zh) 離子植入器及其操作方法
US10892144B2 (en) Plasma processing apparatus, monitoring method, and monitoring program
KR20160140420A (ko) 플라즈마 처리 장치 및 기판 박리 검지 방법
US20150262879A1 (en) Plasma dicing method and plasma dicing apparatus
US10468303B2 (en) Device chip manufacturing method
CN114520172A (zh) 晶圆放置状态检测方法、半导体工艺腔室和设备
US20190287825A1 (en) Plasma processing method and plasma processing apparatus
TW202109702A (zh) 晶圓釋放偵測及防止電弧形成
Barnett Plasma Dicing 300mm Framed Wafers—Analysis of Improvement in Die Strength and Cost Benefits for Thin Die Singulation
CN112005357B (zh) 用于降低接触电阻的基板处理的方法、装置及系统
JP2015133460A (ja) ウェーハの分割方法
JP6188589B2 (ja) ウェーハの分割方法
Barnett et al. Considerations and benefits of plasma etch based wafer dicing
JP2001007084A (ja) エッチング終点判定方法
JP6722466B2 (ja) 成膜装置及び基板判別方法
JP2015220366A (ja) ウェーハの加工方法
JP6595281B2 (ja) テンプレート用のプラズマ処理装置、およびテンプレートのプラズマ処理方法
Barnett et al. Novel end-point solution for improvement in die strength and yields with plasma dicing after grind in volume production
CN108766904B (zh) 一种静电吸附盘的温度监控方法
JPH06232088A (ja) プラズマ装置及びプラズマ処理方法
JP2004260197A (ja) シリコン系基板のプラズマ処理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TG01 Patent term adjustment
TG01 Patent term adjustment