JP6837395B2 - 状態検出方法 - Google Patents

状態検出方法 Download PDF

Info

Publication number
JP6837395B2
JP6837395B2 JP2017130351A JP2017130351A JP6837395B2 JP 6837395 B2 JP6837395 B2 JP 6837395B2 JP 2017130351 A JP2017130351 A JP 2017130351A JP 2017130351 A JP2017130351 A JP 2017130351A JP 6837395 B2 JP6837395 B2 JP 6837395B2
Authority
JP
Japan
Prior art keywords
substrate
dicing
plasma
infrared radiation
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017130351A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018006758A (ja
JP2018006758A5 (https=
Inventor
ジェイ アンセル オリバー
ジェイ アンセル オリバー
エー トッセル デイビッド
エー トッセル デイビッド
ハニチネツ マルチン
ハニチネツ マルチン
Original Assignee
エスピーティーエス テクノロジーズ リミティド
エスピーティーエス テクノロジーズ リミティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エスピーティーエス テクノロジーズ リミティド, エスピーティーエス テクノロジーズ リミティド filed Critical エスピーティーエス テクノロジーズ リミティド
Publication of JP2018006758A publication Critical patent/JP2018006758A/ja
Publication of JP2018006758A5 publication Critical patent/JP2018006758A5/ja
Application granted granted Critical
Publication of JP6837395B2 publication Critical patent/JP6837395B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
JP2017130351A 2016-07-04 2017-07-03 状態検出方法 Active JP6837395B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1611652.7 2016-07-04
GBGB1611652.7A GB201611652D0 (en) 2016-07-04 2016-07-04 Method of detecting a condition

Publications (3)

Publication Number Publication Date
JP2018006758A JP2018006758A (ja) 2018-01-11
JP2018006758A5 JP2018006758A5 (https=) 2020-08-13
JP6837395B2 true JP6837395B2 (ja) 2021-03-03

Family

ID=56891252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017130351A Active JP6837395B2 (ja) 2016-07-04 2017-07-03 状態検出方法

Country Status (7)

Country Link
US (1) US10366899B2 (https=)
EP (1) EP3267465B1 (https=)
JP (1) JP6837395B2 (https=)
KR (1) KR102165795B1 (https=)
CN (1) CN107579044B (https=)
GB (1) GB201611652D0 (https=)
TW (1) TWI713757B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
US10636686B2 (en) 2018-02-27 2020-04-28 Lam Research Corporation Method monitoring chamber drift
JP2020072141A (ja) * 2018-10-30 2020-05-07 株式会社ディスコ プラズマエッチング装置及びウェーハの加工方法
CN110729186A (zh) * 2019-10-24 2020-01-24 东莞记忆存储科技有限公司 一种晶圆切割及分离的加工工艺方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1071579A (en) * 1976-09-13 1980-02-12 Northern Telecom Limited End point control in plasma etching
JPS62190728A (ja) 1986-02-18 1987-08-20 Nippon Telegr & Teleph Corp <Ntt> エツチング終点モニタ法および装置
JPH04206927A (ja) 1990-11-30 1992-07-28 Tokuda Seisakusho Ltd エッチング装置
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
US7507638B2 (en) * 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
US7560007B2 (en) * 2006-09-11 2009-07-14 Lam Research Corporation In-situ wafer temperature measurement and control
US7946759B2 (en) * 2007-02-16 2011-05-24 Applied Materials, Inc. Substrate temperature measurement by infrared transmission
CN100475414C (zh) * 2007-06-29 2009-04-08 华中科技大学 三维激光焊接和切割过程的实时监测装置
CN101419996B (zh) * 2008-12-04 2010-09-22 中国电子科技集团公司第十三研究所 红外—紫外多色探测器及其制备方法
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8912077B2 (en) * 2011-06-15 2014-12-16 Applied Materials, Inc. Hybrid laser and plasma etch wafer dicing using substrate carrier
US8557682B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
CN104285500B (zh) * 2012-05-08 2017-11-28 Ams传感器英国有限公司 红外线发射器与ndir传感器
CA2918687C (en) 2013-07-18 2020-04-14 Fasetto, Inc. System and method for multi-angle videos
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
CN106068548B (zh) * 2014-03-07 2020-02-28 等离子瑟姆有限公司 用于对半导体晶圆进行等离子体切片的方法和设备
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US9034771B1 (en) * 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
US10153204B2 (en) * 2014-06-04 2018-12-11 Flir Systems, Inc. Wafer level packaging of reduced-height infrared detectors
SG10201903242QA (en) 2014-10-13 2019-05-30 Utac Headquarters Pte Ltd Methods for singulating semiconductor wafer

Also Published As

Publication number Publication date
US20180005837A1 (en) 2018-01-04
TW201812831A (zh) 2018-04-01
US10366899B2 (en) 2019-07-30
JP2018006758A (ja) 2018-01-11
TWI713757B (zh) 2020-12-21
KR102165795B1 (ko) 2020-10-14
CN107579044A (zh) 2018-01-12
GB201611652D0 (en) 2016-08-17
EP3267465A1 (en) 2018-01-10
KR20180004663A (ko) 2018-01-12
CN107579044B (zh) 2022-12-27
EP3267465B1 (en) 2019-11-27

Similar Documents

Publication Publication Date Title
JP6837395B2 (ja) 状態検出方法
JP5732941B2 (ja) プラズマエッチング装置及びプラズマエッチング方法
TWI665722B (zh) 蝕刻處理方法及斜角蝕刻裝置
US10892144B2 (en) Plasma processing apparatus, monitoring method, and monitoring program
CN101512307A (zh) 原位晶片温度测量和控制
CN114520172A (zh) 晶圆放置状态检测方法、半导体工艺腔室和设备
US20190287825A1 (en) Plasma processing method and plasma processing apparatus
US20260106121A1 (en) Methods of manufacturing semiconductor device
JP7561913B2 (ja) プラズマ処理装置、監視方法および監視プログラム
JP2018125323A (ja) 保護部材形成装置
Barnett Plasma Dicing 300mm Framed Wafers—Analysis of Improvement in Die Strength and Cost Benefits for Thin Die Singulation
US12300482B2 (en) Element chip manufacturing method and substrate processing method
JP2015133460A (ja) ウェーハの分割方法
KR102922490B1 (ko) 기판을 처리하기 위한 방법들 및 장치
KR20240160512A (ko) 컴퓨터 프로그램, 정보 처리 장치 및 정보 처리 방법
JP6722466B2 (ja) 成膜装置及び基板判別方法
JP5978141B2 (ja) 半導体製造装置および半導体装置の製造方法
TW530351B (en) Method for monitoring status of dry etching process
CN108766904B (zh) 一种静电吸附盘的温度监控方法
JP2026001488A (ja) プラズマ処理装置およびプラズマ処理方法
US20090212018A1 (en) Apparatus and method for producing microcomponents and use of
CN118897770A (zh) 计算机程序产品、信息处理装置、信息处理方法以及计算机可读存储介质
KR100807033B1 (ko) 반도체 소자 제조 장비의 에러 처리 장치
KR20060121601A (ko) 공정 챔버의 온도 감지 장치
KR20020062074A (ko) 전열기를 이용한 정전척의 표면 온도 제어 시스템

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170713

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20200114

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20200122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200630

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200630

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20200630

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20200716

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200929

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201020

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210112

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210209

R150 Certificate of patent or registration of utility model

Ref document number: 6837395

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250