GB201611652D0 - Method of detecting a condition - Google Patents

Method of detecting a condition

Info

Publication number
GB201611652D0
GB201611652D0 GBGB1611652.7A GB201611652A GB201611652D0 GB 201611652 D0 GB201611652 D0 GB 201611652D0 GB 201611652 A GB201611652 A GB 201611652A GB 201611652 D0 GB201611652 D0 GB 201611652D0
Authority
GB
United Kingdom
Prior art keywords
detecting
condition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1611652.7A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Priority to GBGB1611652.7A priority Critical patent/GB201611652D0/en
Publication of GB201611652D0 publication Critical patent/GB201611652D0/en
Priority to US15/626,250 priority patent/US10366899B2/en
Priority to KR1020170080623A priority patent/KR102165795B1/ko
Priority to TW106121590A priority patent/TWI713757B/zh
Priority to JP2017130351A priority patent/JP6837395B2/ja
Priority to CN201710534660.1A priority patent/CN107579044B/zh
Priority to EP17179411.8A priority patent/EP3267465B1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
GBGB1611652.7A 2016-07-04 2016-07-04 Method of detecting a condition Ceased GB201611652D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB1611652.7A GB201611652D0 (en) 2016-07-04 2016-07-04 Method of detecting a condition
US15/626,250 US10366899B2 (en) 2016-07-04 2017-06-19 Method of detecting a condition
KR1020170080623A KR102165795B1 (ko) 2016-07-04 2017-06-26 상태 검출 방법
TW106121590A TWI713757B (zh) 2016-07-04 2017-06-28 電漿切割製程之控制方法
JP2017130351A JP6837395B2 (ja) 2016-07-04 2017-07-03 状態検出方法
CN201710534660.1A CN107579044B (zh) 2016-07-04 2017-07-03 探测状况的方法以及相关的装置
EP17179411.8A EP3267465B1 (en) 2016-07-04 2017-07-03 Method and apparatus of detecting a condition in a plasma dicing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1611652.7A GB201611652D0 (en) 2016-07-04 2016-07-04 Method of detecting a condition

Publications (1)

Publication Number Publication Date
GB201611652D0 true GB201611652D0 (en) 2016-08-17

Family

ID=56891252

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1611652.7A Ceased GB201611652D0 (en) 2016-07-04 2016-07-04 Method of detecting a condition

Country Status (7)

Country Link
US (1) US10366899B2 (https=)
EP (1) EP3267465B1 (https=)
JP (1) JP6837395B2 (https=)
KR (1) KR102165795B1 (https=)
CN (1) CN107579044B (https=)
GB (1) GB201611652D0 (https=)
TW (1) TWI713757B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
US10636686B2 (en) 2018-02-27 2020-04-28 Lam Research Corporation Method monitoring chamber drift
JP2020072141A (ja) * 2018-10-30 2020-05-07 株式会社ディスコ プラズマエッチング装置及びウェーハの加工方法
CN110729186A (zh) * 2019-10-24 2020-01-24 东莞记忆存储科技有限公司 一种晶圆切割及分离的加工工艺方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1071579A (en) * 1976-09-13 1980-02-12 Northern Telecom Limited End point control in plasma etching
JPS62190728A (ja) 1986-02-18 1987-08-20 Nippon Telegr & Teleph Corp <Ntt> エツチング終点モニタ法および装置
JPH04206927A (ja) 1990-11-30 1992-07-28 Tokuda Seisakusho Ltd エッチング装置
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
US7507638B2 (en) * 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
US7560007B2 (en) * 2006-09-11 2009-07-14 Lam Research Corporation In-situ wafer temperature measurement and control
US7946759B2 (en) * 2007-02-16 2011-05-24 Applied Materials, Inc. Substrate temperature measurement by infrared transmission
CN100475414C (zh) * 2007-06-29 2009-04-08 华中科技大学 三维激光焊接和切割过程的实时监测装置
CN101419996B (zh) * 2008-12-04 2010-09-22 中国电子科技集团公司第十三研究所 红外—紫外多色探测器及其制备方法
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8912077B2 (en) * 2011-06-15 2014-12-16 Applied Materials, Inc. Hybrid laser and plasma etch wafer dicing using substrate carrier
US8557682B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
CN104285500B (zh) * 2012-05-08 2017-11-28 Ams传感器英国有限公司 红外线发射器与ndir传感器
CA2918687C (en) 2013-07-18 2020-04-14 Fasetto, Inc. System and method for multi-angle videos
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
CN106068548B (zh) * 2014-03-07 2020-02-28 等离子瑟姆有限公司 用于对半导体晶圆进行等离子体切片的方法和设备
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US9034771B1 (en) * 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
US10153204B2 (en) * 2014-06-04 2018-12-11 Flir Systems, Inc. Wafer level packaging of reduced-height infrared detectors
SG10201903242QA (en) 2014-10-13 2019-05-30 Utac Headquarters Pte Ltd Methods for singulating semiconductor wafer

Also Published As

Publication number Publication date
US20180005837A1 (en) 2018-01-04
TW201812831A (zh) 2018-04-01
US10366899B2 (en) 2019-07-30
JP6837395B2 (ja) 2021-03-03
JP2018006758A (ja) 2018-01-11
TWI713757B (zh) 2020-12-21
KR102165795B1 (ko) 2020-10-14
CN107579044A (zh) 2018-01-12
EP3267465A1 (en) 2018-01-10
KR20180004663A (ko) 2018-01-12
CN107579044B (zh) 2022-12-27
EP3267465B1 (en) 2019-11-27

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)