CN107533950A - 用于生产电工薄层的室温方法及按照所述方法获得的薄层序列 - Google Patents
用于生产电工薄层的室温方法及按照所述方法获得的薄层序列 Download PDFInfo
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- CN107533950A CN107533950A CN201680023159.2A CN201680023159A CN107533950A CN 107533950 A CN107533950 A CN 107533950A CN 201680023159 A CN201680023159 A CN 201680023159A CN 107533950 A CN107533950 A CN 107533950A
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000011159 matrix material Substances 0.000 claims abstract description 26
- 239000004033 plastic Substances 0.000 claims abstract description 20
- 229920003023 plastic Polymers 0.000 claims abstract description 20
- 239000003513 alkali Substances 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 229910000765 intermetallic Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 239000011133 lead Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- -1 graphite modified carbon Chemical class 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical group C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 239000005864 Sulphur Substances 0.000 claims description 2
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000004927 clay Substances 0.000 claims description 2
- 238000009408 flooring Methods 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 239000004579 marble Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 239000011257 shell material Substances 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 239000002023 wood Substances 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 150000003057 platinum Chemical class 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 6
- 239000002440 industrial waste Substances 0.000 abstract description 4
- 239000013528 metallic particle Substances 0.000 abstract description 3
- 125000005702 oxyalkylene group Chemical group 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000007711 solidification Methods 0.000 abstract 2
- 230000008023 solidification Effects 0.000 abstract 2
- 239000002923 metal particle Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 88
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 235000013550 pizza Nutrition 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 208000021760 high fever Diseases 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002048 multi walled nanotube Chemical group 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2095—Light-sensitive devices comprising a flexible sustrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Abstract
根据现有技术的方法总是要求在升高的温度下的烧结步骤,并且这被认为是有问题的。另外,有问题的是柔性薄层(特别是PV层)往往不能经受这样的温度,并且此外不允许利用工业废热和/或长波光子。这个问题可以使用以下方法解决,其中在固化过程中的另外的反应加速并改进固化。在特别有利的实施例中,具有在其中提供有连续金属颗粒和在上层中的碱溶性硅氧烷部分和金属颗粒的塑料基质的双层序列允许通过在碱溶解期间的组合最终固化来生产可以光伏利用工业废热/长波IR辐射的PV层序列。积极开发工业废热/热/体热在许多领域中提供了明显的、经济上可行的优势。
Description
技术领域
本发明可以总体上被分类在电工薄层领域。该技术领域在涉及诸位发明人的DE10 2015 102 801中有用地概述。可以从本申请和在此引用的现有技术识别出已知的措施、特征和方法。总体而言,已知所讨论的具有微米范围厚度并且可以在可移动的可折叠的并且可弯曲的载体上灵活地携带的类型的层。因此,AT 36002 E(巴斯夫公司(BASF Corp.)的公开号0 119 051 B2)披露了合适的丙烯酸酯基涂层,其可以用作柔性基材的覆盖物。由本文件可辨识出用于生产这些层的典型的成分、特性和措施。
背景技术
本发明涉及用于生产电工薄层、特别是电工PV层序列的方法。
PV层序列长期以来一直是研究和开发的主题。适当焊接包装并且接触并且还安排在用于大面积发电的太阳能工厂户外的单晶和多晶Si电池是相关技术领域中已确立的产品实例。问题是这些传统电池是刚性的,而且相当非柔性的。在面上延伸的板必须始终在水平面中朝向太阳的位置定向,以确保最佳产率。提供从导电层和开关层通过PV层到覆盖层和保护层携带运送电工薄层的柔性薄层系统在这里开始起作用。本申请人在该特定领域是活跃的,并且本申请要求一种用于生产此类层和层复合物的方法以及根据该方法获得的层序列。
所讨论类型的层和PV层序列的保护层和导电层自然是导电和/或柔性的。例如在DE 198 15 291 B4和其中引用的现有技术中披露了适当的导电层和保护层。
所建立的PV导电层和用于生产此类PV层复合物的方法在DE 199 46 712 A1中披露。缺点是存在的溶剂和烧结反应性物质要求150℃或更高的温度以便能够在最终的热固结期间被完全去除;在实际的产品实例中,在此最终的热固结是在450℃下进行的。
鉴于这些问题,EP 2 119 747 B1提出了进行可以通过高反应性金属纳米颗粒在约100℃下烧结以提供不间断的导体轨道的银组合物。然而,即使这种措施不能使得可能在基材上生产电工薄层、特别是PV层序列,而无需烧结步骤:始终必需的是将印刷的薄层加热至约100℃(在示例性实施例中130℃)的烧结温度。
因而,通过本发明解决的问题是克服现有技术的缺点并且提供一种方法以及根据该方法的一种电工薄层,该方法尽管工业过程方案和大的表面积制造可以在不加热至烧结温度下提供是固体的、稳定的并且在其电工技术特性上几乎100%可逆的薄层。
该问题的解决方案根据独立权利要求的特征实现。由从属权利要求和以下描述可识别出有利的实施例。
发明内容
根据本发明,用于生产电工的薄层的室温方法(其中以分散体在面上提供导电和/或半导体的无机附聚物并且硬化以提供层)提供了在室温下进行硬化,并且通过暴露于至少一种试剂加速硬化。
一种根据该方法获得并且作为PV层序列获得的电工薄层序列的特征在于,该薄层序列包括玻璃载体,包括施加在该玻璃载体顶上的电极层,包括施加在该电极层顶上的第一层,该第一层包含塑料基质中的铝颗粒,包括施加在该第一层顶上的第二层,该第二层包含作为至少部分碱性的玻璃状层的在玻璃状网络中的至少硅-氧桥,并且还包含作为无机附聚物的至少部分碱溶解的铝颗粒,包括施加在该第二层顶上并具有接触电极的透明覆盖电极,其中进而如此制备的PV层序列在长波和极长波长红外范围内表现出光伏效应。
发明内容和有利特征
根据本发明,用于生产电工的薄层的室温方法(其中以分散体在面上提供导电和/或半导体的无机附聚物并且硬化以提供一个层)的特征在于在室温下进行硬化,并且通过暴露于至少一种试剂加速硬化。
优选地,该方法的特征在于,形成PV层序列。
优选地,该方法的特征在于,施加作为至少一个基层的包含至少一种金属或金属化合物的层,其中该至少一种金属或其化合物选自下组,该组由以下项组成:钢、锌、锡、银、铜、铝、镍、铅、铁。
优选地,该方法的特征在于,施加并且至少部分硬化作为导电基层的至少一个金属导电和/或半导体层。
优选地,该方法的特征在于,作为载体,使用在面上延伸的材料网,该材料网由至少一种选自以下材料组的材料组成,该组由以下项组成:玻璃、塑料、聚碳酸酯、塑料膜、金属合金、电机块合金、换热器管合金、换热器合金、换热器焊接合金、陶瓷、工业陶瓷、天然石、大理石、粘土陶瓷、屋顶瓦陶瓷、层压木材、地板材料、铝、楼梯铝合金、印刷电路板复合物、集成电路外壳材料、处理器外壳化合物。
优选地,该方法的特征在于,第一层的无机附聚物是分布在塑料基质中的金属或金属化合物,这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆。
优选地,该方法的特征在于,第二层的无机附聚物是被安排分布在至少部分无机基质中的金属或金属化合物,其中这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆。
优选地,该方法的特征在于,在作为无机基质的层中,使用包含作为该玻璃状氧化基质的至少一种链形成或改性元件的基质,该元件选自下组,该组由以下项组成:硼、磷、硅、砷、硫、硒、碲、无定形形式的碳、石墨改性的碳、碳纳米管形式的碳、多壁碳纳米管形式的碳、巴明敏斯特(Buckminster)富勒烯形式的碳、钙、钠、铝、铅、镁、钡、钾、锰、锌、锡、锑、铈、锆、钛、锶、镧、钍、钇、氟、氯、溴、碘。
优选地,该方法的特征在于
-将导电电极层施加在载体顶上,
-将分布在塑料基质中的金属或金属化合物作为第一层中的无机附聚物施加在电极层顶上,
-将至少部分强碱性或强酸性氧化基质中的无机金属附聚物的第二层施加在第一层顶上,其中
-在施加和硬化期间,这些金属附聚物与该强酸性或碱性基质反应,其中该基质还进而与该第一层的金属附聚物反应,
-在硬化和反应期间,形成光伏活性结,
-该第二层设置有透明覆盖电极和/或接触电极,并且
-适当地接触该光伏活性层序列并且焊接包装为PV层序列。
附图说明
附图参照原则草图展示了……
图1,包含在顶面上的塑料基质的PV双层的SEM平面图,该塑料基质包含硅氧烷部分以及被携带并且部分溶解在其中的Al片,该PV双层被施加并且硬化在包含相同Al片的纯的预硬化的塑料基质的顶上;
图2,根据图1的SEM图像的放大部分;
图3,根据图1和2的PV双层的底面的SEM图像;
图4a,由PV双层测量光伏分接(tappable)电位,其可以仅由围绕PV双层放置的热水产生,作为从46℃降至31℃的水/电池的温度的函数,表明起始值、变化和相应的最终值;
图4b,作为根据所提供的现有技术的波长的函数的在空气中的H2O的光吸收最大值,用于阐明图4所示的行为。
通过参考示例性实施例的本发明的详细说明
在有利的实施例中,通过根据本发明的方法作为PV层序列获得的电工薄层序列的特征在于,该薄层序列
-包括玻璃载体,
-包括施加在该玻璃载体顶上的电极层,该电极层包括银,
-包括施加在该电极层顶上的第一层,该第一层包含塑料基质中的铝颗粒,
-包括施加在该第一层顶上的第二层,该第二层包含作为至少部分碱性的玻璃状层的在玻璃状网络中的至少硅-氧桥,并且还包含作为无机附聚物的至少部分碱溶解的铝颗粒,
-包括施加在该第二层顶上并具有接触电极的透明覆盖电极,其中进而
-如此制备的PV层序列在长波和极长波长红外范围内表现出光伏效应。
在另一个有利的实施例中,将用于外部区域的丙烯酸酯基涂漆与铝片(用于具有银外观的涂漆的涂漆工业的颜料添加)混合,均化,并且将第一层沉积在具有约10cm×10cm的面积的玻璃载体上,该载体预先用半透明的导电金属层涂覆。将包含铝片的丙烯酸酯基层在空气中在室温下预硬化5分钟。随后,将相同的丙烯酸酯基涂漆的第二混合物用铝片制备,与二氧化硅溶胶混合,并且在冷却的搅拌器中用氢氧化钠水溶液调节至碱性pH并且均化。将仍反应的混合物作为第二层施加在第一预硬化层顶上,并且均匀且覆盖地分布。其中铝至少部分溶解的平行反应加速了两层的最终硬化。由此获得的层复合物在其顶面上设置有由来自Busch的室温导电银制成的指状电极。如图1所示,在扫描电子显微镜图像(SEM)中,由此获得的其顶面上的层的特征在于其中碱溶解的水玻璃提供硅氧烷部分的塑料基质。在该基质中携带的Al片溶解并且牢固地整合到塑料基质中。如图2所传授的,这些Al片通过塑料层到达表面,并允许由通过接触点和短电解质桥导电地互连的Al片制成的支架的直接电接触。使用手术刀分离塑料双层的柔性部分显示出该双层作为柔性的固体的可去除的复合物存在;通过SEM在其底面上测试所去除的部分。如图3在SEM图像中所示出的,在底面上也存在Al片,并且与半透明电极的相界面面接触并允许电接触。
该双层的顶面设置有由来自Busch的室温导电银制成的指状电极,并且与透明粘附地可结合的ITO膜补充地面接触。随后,将覆盖电极和底面电极接触,并研究电池的PV活性。最初通过具有可见光的冷光LED光源研究该双层的PV活性。光伏电流是弱至不存在的。在1至4秒的短预热阶段后用卤素灯照射时,测量超过100mV的明显的光伏电位差异。有可能使用恒定负载来操作LED自行车灯。该问题产生于这是否可归因于珀尔帖效应。为了测试这一点,整个接触的电池在顶面和底面上设置热电偶,焊接包装在具有实施的接触线的水密真空袋中并完全浸没在10升热水中。在约5分钟的加热时间后,所有热电偶的温度是相同的。在覆盖电极与底面电极之间的光伏电位差是显著的,并且成比例地依赖于现在随着水的温度而缓慢下降的电池温度。在起始值、最终值和测量值之间发生的变化用数字记录并且在图4的图形中再现。如图4a所示出的,来自PV双层的光伏分接电位的测量显示出对于从46℃至31℃下降的水的温度成比例的依赖性:温度越低,可分接电位越低。然而,周围的水确保在这里不会测量到温度梯度,这在珀尔帖元件中将要求然后可测量的塞贝克效应。完全被均匀加热的水包围的电池的温度不显示梯度。
出人意料地,披萨炉中去除和未包装的电池的验证显示,在电池与披萨炉的热壁的距离处高达50℃下,没有足够的热辐射到达电池。如图4b所示出的,作为波长的函数的空气中H2O的已知光吸收最大值在5至10微米的波长范围内是显著的。
诸位发明人相信,特定地热水相应地在该波长范围内发出,并且因此在所选择的实验装置中以最高的效率提供具有适当能量的光子。测量结果清楚地表明在长波至远IR范围内超过5微米的可用带隙。然而,这也意味着相反地,在高热入射辐射下,足够的热辐射将需要穿透细胞周围的薄空气层并且能够产生电流。这被证实:在热炉石与双层之间具有2cm的空气间隙的在80℃下的披萨炉中,如以上描述的生产和接触的双层清楚并且明显地输送可测量的电流,其在冷却期间再次与温度成比例地下降并且在约60℃下失去控制。目前生产的双层序列使得有可能实现长波至极长波轻光分数直至远IR辐射的有利光伏利用,这种范围在现有技术中是不利地被忽略并且未研究的波长范围。当将上述电池连接到电压表上并用放置在其上的平手加热时,建立与相应的可测量的表面温度成比例的电位差。特别地,工业废热和/或体热可以有用地并且有效地用目前生产的PV层序列利用。
工业实用性
这是根据现有技术的方法的一个问题,这些方法总是需要在高温下的烧结步骤。另一个问题是柔性薄层、特别是PV层经常不能容许此类温度,并且另外不允许利用工业废热和/或长波光子。
这些问题的解决方案可以通过以下方法提供,其中在硬化期间加速另外的反应并且改善硬化。这特别有利地允许包含塑料基质的双层序列,其中遍及金属颗粒并且在顶层中存在碱溶解的硅氧烷部分并且存在金属颗粒,其中通过在碱溶解期间的相互最终硬化使得有可能产生工业废热/长波IR辐射通过光伏手段变得可利用的PV层序列。工业废热/热/体热的有效利用在许多领域提供了明显的经济优势。
Claims (10)
1.一种用于生产电工薄层的室温方法,其中以分散体在面上提供导电和/或半导体的无机附聚物并且将其硬化以提供层,该方法的特征在于
-在室温下进行该硬化并且
-通过暴露于至少一种试剂来加速该硬化。
2.如前一项权利要求所述的方法,其特征在于,形成PV层序列。
3.如前述权利要求中任一项所述的方法,其特征在于,施加作为至少一个基层的包含至少一种金属或金属化合物的层,其中该至少一种金属或其化合物选自下组,该组由以下项组成:钢、锌、锡、银、铜、铝、镍、铅、铁。
4.如前述权利要求中任一项所述的方法,其特征在于,施加并且至少部分硬化作为导电基层的至少一个金属导电和/或半导体层。
5.如前述权利要求中任一项所述的方法,其特征在于,作为载体,使用在面上延伸的材料网,该材料网由至少一种选自以下材料组的材料组成,该组由以下项组成:玻璃、塑料、聚碳酸酯、塑料膜、金属合金、电机块合金、换热器管合金、换热器合金、换热器焊接合金、陶瓷、工业陶瓷、天然石、大理石、粘土陶瓷、屋顶瓦陶瓷、层压木材、地板材料、铝、楼梯铝合金、铂复合物、集成电路外壳材料、处理器外壳化合物。
6.如前述权利要求中任一项所述的方法,其特征在于,第一层的无机附聚物是分布在塑料基质中的金属或金属化合物,这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼、铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆。
7.如前述权利要求中任一项所述的方法,其特征在于,第二层的无机附聚物是被安排分布在至少部分无机基质中的金属或金属化合物,其中这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼、铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆。
8.如前述权利要求中任一项所述的方法,其特征在于,在层中,作为无机基质使用包含作为该玻璃状氧化基质的至少一种链形成或改性元件的基质,该元件选自下组,该组由以下项组成:硼、磷、硅、砷、硫、硒、碲、无定形形式的碳、石墨改性的碳、碳纳米管形式的碳、多壁碳纳米管形式的碳、巴明敏斯特富勒烯形式的碳、钙、钠、铝、铅、镁、钡、钾、锰、锌、锡、锑、铈、锆、钛、锶、镧、钍、钇、氟、氯、溴、碘。
9.如前述权利要求中任一项所述的方法,其特征在于
-将导电电极层施加在载体顶上,
-将分布在塑料基质中的金属或金属化合物作为第一层中的无机附聚物施加在电极层顶上,
-将至少部分强碱性或强酸性氧化基质中的无机金属附聚物的第二层施加在该第一层顶上,其中
-在施加和硬化期间,这些金属附聚物与该强酸性或碱性基质反应,其中该基质还进而与该第一层的金属附聚物反应,
-在硬化和反应期间,形成光伏活性结,
-该第二层设置有透明覆盖电极和/或接触电极,并且
-适当地接触该光伏活性层序列并且焊接包装为PV层序列。
10.一种作为如前述权利要求中任一项所述的PV层序列获得的电工薄层序列,其特征在于,该薄层序列
-包括玻璃载体,
-包括施加在该玻璃载体顶上的电极层,该电极层包括银,
-包括施加在该电极层顶上的第一层,该第一层包含塑料基质中的铝颗粒,-包括施加在该第一层顶上的第二层,该第二层包含作为至少部分碱性的玻璃状层的在玻璃状网络中的至少硅-氧桥,并且还包含作为无机附聚物的至少部分碱溶解的铝颗粒,
-包括施加在该第二层顶上并具有接触电极的透明覆盖电极,其中进而
-如此制备的PV层序列在长波和极长波长红外范围内表现出光伏效应。
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DE102015015600.4 | 2015-12-06 | ||
DE102015015600 | 2015-12-06 | ||
PCT/DE2016/100083 WO2016134703A1 (de) | 2015-02-26 | 2016-02-26 | Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und verfahrensgemäss erhaltene dünnschichtfolge |
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Also Published As
Publication number | Publication date |
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JP2018521443A (ja) | 2018-08-02 |
EP3262673A1 (de) | 2018-01-03 |
RU2017131189A (ru) | 2019-03-28 |
BR112017018306A2 (pt) | 2018-04-17 |
US20180040432A1 (en) | 2018-02-08 |
RU2732867C2 (ru) | 2020-09-24 |
CN107466422A (zh) | 2017-12-12 |
EP3262675A1 (de) | 2018-01-03 |
RU2017131197A3 (zh) | 2019-06-20 |
RU2698739C2 (ru) | 2019-08-29 |
US11935976B2 (en) | 2024-03-19 |
CN107466422B (zh) | 2021-03-19 |
BR112017018306B1 (pt) | 2023-01-10 |
WO2016134704A1 (de) | 2016-09-01 |
JP2021177549A (ja) | 2021-11-11 |
JP2023067932A (ja) | 2023-05-16 |
JP2018509762A (ja) | 2018-04-05 |
US20220052214A1 (en) | 2022-02-17 |
US20180040751A1 (en) | 2018-02-08 |
DE102016002213A1 (de) | 2016-11-03 |
CN107533950B (zh) | 2022-02-11 |
RU2017131197A (ru) | 2019-03-28 |
WO2016134703A1 (de) | 2016-09-01 |
JP2021177552A (ja) | 2021-11-11 |
RU2017131189A3 (zh) | 2019-07-17 |
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