CN107431030B - 用于确定在衬底中的平面内变形的方法及系统 - Google Patents

用于确定在衬底中的平面内变形的方法及系统 Download PDF

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Publication number
CN107431030B
CN107431030B CN201680019869.8A CN201680019869A CN107431030B CN 107431030 B CN107431030 B CN 107431030B CN 201680019869 A CN201680019869 A CN 201680019869A CN 107431030 B CN107431030 B CN 107431030B
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China
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substrate
plane deformation
unclamped state
flat plate
plate model
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Chinese (zh)
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CN107431030A (zh
Inventor
M·D·史密斯
J·所罗门
S·舍温
W·D·米厄尔
A·莱维
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02027—Two or more interferometric channels or interferometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201680019869.8A 2015-04-06 2016-04-06 用于确定在衬底中的平面内变形的方法及系统 Active CN107431030B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562143708P 2015-04-06 2015-04-06
US62/143,708 2015-04-06
US15/091,021 2016-04-05
US15/091,021 US10024654B2 (en) 2015-04-06 2016-04-05 Method and system for determining in-plane distortions in a substrate
PCT/US2016/026148 WO2016164415A1 (en) 2015-04-06 2016-04-06 Method and system for determining in-plane distortions in a substrate

Publications (2)

Publication Number Publication Date
CN107431030A CN107431030A (zh) 2017-12-01
CN107431030B true CN107431030B (zh) 2020-10-09

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Country Status (7)

Country Link
US (1) US10024654B2 (enExample)
JP (1) JP6762317B2 (enExample)
KR (1) KR102353250B1 (enExample)
CN (1) CN107431030B (enExample)
SG (1) SG11201708137VA (enExample)
TW (1) TWI661175B (enExample)
WO (1) WO2016164415A1 (enExample)

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KR102760929B1 (ko) 2019-01-21 2025-02-03 삼성전자주식회사 반도체 소자 제조 방법
TWI731760B (zh) * 2020-07-28 2021-06-21 亞亞科技股份有限公司 電路板翹曲檢測裝置
US11829077B2 (en) * 2020-12-11 2023-11-28 Kla Corporation System and method for determining post bonding overlay
CN113203357B (zh) * 2021-04-09 2022-08-09 中国科学院上海光学精密机械研究所 一种双侧斐索干涉仪检测装置
US12165930B2 (en) * 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
US11782411B2 (en) 2021-07-28 2023-10-10 Kla Corporation System and method for mitigating overlay distortion patterns caused by a wafer bonding tool
US12385850B2 (en) 2021-08-16 2025-08-12 Globalwafers Co., Ltd. Semiconductor wafers using front-end processed wafer global geometry metrics
US11940266B2 (en) * 2021-09-21 2024-03-26 The Aerospace Corporation Process for rapidly measuring coefficient of moisture expansion (CME) values for materials
KR20240156433A (ko) * 2022-05-13 2024-10-29 어플라이드 머티어리얼스, 인코포레이티드 기판 곡률을 사용하여 면외 왜곡을 보상하기 위한 선량 맵핑
US20250028294A1 (en) * 2023-07-18 2025-01-23 Applied Materials, Inc. Measurement of inherent substrate distortion
CN117238812B (zh) * 2023-11-10 2024-04-05 四川省农业机械科学研究院 基板翘曲测量装置及测量方法

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Publication number Publication date
US20160290789A1 (en) 2016-10-06
JP6762317B2 (ja) 2020-09-30
KR20170136569A (ko) 2017-12-11
TW201702552A (zh) 2017-01-16
JP2018512738A (ja) 2018-05-17
KR102353250B1 (ko) 2022-01-18
CN107431030A (zh) 2017-12-01
SG11201708137VA (en) 2017-11-29
US10024654B2 (en) 2018-07-17
WO2016164415A1 (en) 2016-10-13
TWI661175B (zh) 2019-06-01

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