TWI661175B - 用於判定在基板中之平面內扭曲之方法及系統 - Google Patents
用於判定在基板中之平面內扭曲之方法及系統 Download PDFInfo
- Publication number
- TWI661175B TWI661175B TW105110795A TW105110795A TWI661175B TW I661175 B TWI661175 B TW I661175B TW 105110795 A TW105110795 A TW 105110795A TW 105110795 A TW105110795 A TW 105110795A TW I661175 B TWI661175 B TW I661175B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- unclamped state
- flat plate
- plane
- film stress
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 219
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000005259 measurement Methods 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000004458 analytical method Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000009977 dual effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005305 interferometry Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
- G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
- G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02027—Two or more interferometric channels or interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562143708P | 2015-04-06 | 2015-04-06 | |
| US62/143,708 | 2015-04-06 | ||
| US15/091,021 US10024654B2 (en) | 2015-04-06 | 2016-04-05 | Method and system for determining in-plane distortions in a substrate |
| US15/091,021 | 2016-04-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201702552A TW201702552A (zh) | 2017-01-16 |
| TWI661175B true TWI661175B (zh) | 2019-06-01 |
Family
ID=57017441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105110795A TWI661175B (zh) | 2015-04-06 | 2016-04-06 | 用於判定在基板中之平面內扭曲之方法及系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10024654B2 (enExample) |
| JP (1) | JP6762317B2 (enExample) |
| KR (1) | KR102353250B1 (enExample) |
| CN (1) | CN107431030B (enExample) |
| SG (1) | SG11201708137VA (enExample) |
| TW (1) | TWI661175B (enExample) |
| WO (1) | WO2016164415A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10236222B2 (en) * | 2017-02-08 | 2019-03-19 | Kla-Tencor Corporation | System and method for measuring substrate and film thickness distribution |
| EP3364247A1 (en) * | 2017-02-17 | 2018-08-22 | ASML Netherlands B.V. | Methods & apparatus for monitoring a lithographic manufacturing process |
| EP3457213A1 (en) * | 2017-09-18 | 2019-03-20 | ASML Netherlands B.V. | Methods and apparatus for use in a device manufacturing method |
| WO2020038642A1 (en) * | 2018-08-22 | 2020-02-27 | Asml Netherlands B.V. | Metrology apparatus |
| KR102760929B1 (ko) | 2019-01-21 | 2025-02-03 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
| TWI731760B (zh) * | 2020-07-28 | 2021-06-21 | 亞亞科技股份有限公司 | 電路板翹曲檢測裝置 |
| US11829077B2 (en) * | 2020-12-11 | 2023-11-28 | Kla Corporation | System and method for determining post bonding overlay |
| CN113203357B (zh) * | 2021-04-09 | 2022-08-09 | 中国科学院上海光学精密机械研究所 | 一种双侧斐索干涉仪检测装置 |
| US12165930B2 (en) * | 2021-06-03 | 2024-12-10 | Kla Corporation | Adaptive modeling misregistration measurement system and method |
| US11782411B2 (en) | 2021-07-28 | 2023-10-10 | Kla Corporation | System and method for mitigating overlay distortion patterns caused by a wafer bonding tool |
| US12385850B2 (en) | 2021-08-16 | 2025-08-12 | Globalwafers Co., Ltd. | Semiconductor wafers using front-end processed wafer global geometry metrics |
| US11940266B2 (en) * | 2021-09-21 | 2024-03-26 | The Aerospace Corporation | Process for rapidly measuring coefficient of moisture expansion (CME) values for materials |
| KR20240156433A (ko) * | 2022-05-13 | 2024-10-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 곡률을 사용하여 면외 왜곡을 보상하기 위한 선량 맵핑 |
| US20250028294A1 (en) * | 2023-07-18 | 2025-01-23 | Applied Materials, Inc. | Measurement of inherent substrate distortion |
| CN117238812B (zh) * | 2023-11-10 | 2024-04-05 | 四川省农业机械科学研究院 | 基板翘曲测量装置及测量方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030106378A1 (en) * | 2001-05-25 | 2003-06-12 | Antonios Giannakopoulos | Determining large deformations and stresses of layered and graded structures to include effects of body forces |
| US20110172982A1 (en) * | 2010-01-08 | 2011-07-14 | Kla-Tencor Technologies Corp. | Site based quantification of substrate topography and its relation to lithography defocus and overlay |
| US8068234B2 (en) * | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
| WO2013120424A1 (zh) * | 2012-02-13 | 2013-08-22 | Fu Kang | 一种确定非线性薄膜应力的系统与方法 |
| US8625083B2 (en) * | 2011-03-12 | 2014-01-07 | Ken Roberts | Thin film stress measurement 3D anisotropic volume |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5444538A (en) * | 1994-03-10 | 1995-08-22 | New Vision Systems, Inc. | System and method for optimizing the grid and intrafield registration of wafer patterns |
| JPH09129635A (ja) * | 1995-10-30 | 1997-05-16 | Mitsubishi Electric Corp | 半導体形状予測シミュレーション方法及びそのシステム |
| JP3892750B2 (ja) * | 2002-04-12 | 2007-03-14 | 独立行政法人科学技術振興機構 | 三次元特徴領域抽出装置 |
| JP4464033B2 (ja) | 2002-06-13 | 2010-05-19 | 信越半導体株式会社 | 半導体ウエーハの形状評価方法及び形状評価装置 |
| MY144124A (en) * | 2002-07-11 | 2011-08-15 | Molecular Imprints Inc | Step and repeat imprint lithography systems |
| US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| MY136129A (en) | 2002-12-13 | 2008-08-29 | Molecular Imprints Inc | Magnification correction employing out-of-plane distortion of a substrate |
| US6847458B2 (en) * | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
| JP2006004259A (ja) * | 2004-06-18 | 2006-01-05 | Nec Corp | 電子機器の設計支援システム及び多層プリント回路基板の設計支援システム |
| US7418353B2 (en) | 2004-10-12 | 2008-08-26 | Wisconsin Alumni Research Foundation | Determining film stress from substrate shape using finite element procedures |
| USD541979S1 (en) * | 2005-12-30 | 2007-05-01 | Crown Packaging Technology, Inc. | Spatula surface cosmetic applicator |
| US7712068B2 (en) | 2006-02-17 | 2010-05-04 | Zhuoxiang Ren | Computation of electrical properties of an IC layout |
| US8175831B2 (en) * | 2007-04-23 | 2012-05-08 | Kla-Tencor Corp. | Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers |
| JP5634864B2 (ja) | 2007-05-30 | 2014-12-03 | ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ | リソグラフィック・プロセスに於ける、プロセス制御方法およびプロセス制御装置 |
| JP2009003529A (ja) * | 2007-06-19 | 2009-01-08 | Sharp Corp | モデル生成装置、モデル生成方法およびモデル生成プログラム |
| US7873585B2 (en) | 2007-08-31 | 2011-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for predicting a semiconductor parameter across an area of a wafer |
| US8065109B2 (en) | 2008-08-28 | 2011-11-22 | Kla-Tencor Corporation | Localized substrate geometry characterization |
| CN101629859B (zh) * | 2009-05-04 | 2011-04-20 | 付康 | 基于变形测量与数值反求确定薄膜应力的系统与方法 |
| WO2011101183A1 (en) | 2010-02-19 | 2011-08-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product |
| US9354526B2 (en) | 2011-10-11 | 2016-05-31 | Kla-Tencor Corporation | Overlay and semiconductor process control using a wafer geometry metric |
| KR101664962B1 (ko) | 2012-05-29 | 2016-10-11 | 에이에스엠엘 네델란즈 비.브이. | 오버레이를 보정하기 위한 정렬 마크들의 유용도를 결정하는 방법, 및 리소그래피 장치 및 오버레이 측정 시스템의 조합 |
| US9430593B2 (en) | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
| US9036157B2 (en) * | 2012-10-19 | 2015-05-19 | National Applied Research Laboratories | System of computing surface reconstruction, in-plane and out-of-plane displacements and strain distribution |
| US20140152797A1 (en) * | 2012-12-04 | 2014-06-05 | Samsung Electronics Co., Ltd. | Confocal optical inspection apparatus and confocal optical inspection method |
| US10401279B2 (en) | 2013-10-29 | 2019-09-03 | Kla-Tencor Corporation | Process-induced distortion prediction and feedforward and feedback correction of overlay errors |
| US9087176B1 (en) | 2014-03-06 | 2015-07-21 | Kla-Tencor Corporation | Statistical overlay error prediction for feed forward and feedback correction of overlay errors, root cause analysis and process control |
| US9311443B2 (en) | 2014-06-17 | 2016-04-12 | Globalfoundries Inc. | Correcting for stress induced pattern shifts in semiconductor manufacturing |
| US10509329B2 (en) | 2014-09-03 | 2019-12-17 | Kla-Tencor Corporation | Breakdown analysis of geometry induced overlay and utilization of breakdown analysis for improved overlay control |
-
2016
- 2016-04-05 US US15/091,021 patent/US10024654B2/en active Active
- 2016-04-06 CN CN201680019869.8A patent/CN107431030B/zh active Active
- 2016-04-06 JP JP2017552449A patent/JP6762317B2/ja active Active
- 2016-04-06 KR KR1020177032141A patent/KR102353250B1/ko active Active
- 2016-04-06 SG SG11201708137VA patent/SG11201708137VA/en unknown
- 2016-04-06 WO PCT/US2016/026148 patent/WO2016164415A1/en not_active Ceased
- 2016-04-06 TW TW105110795A patent/TWI661175B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030106378A1 (en) * | 2001-05-25 | 2003-06-12 | Antonios Giannakopoulos | Determining large deformations and stresses of layered and graded structures to include effects of body forces |
| US8068234B2 (en) * | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
| US20110172982A1 (en) * | 2010-01-08 | 2011-07-14 | Kla-Tencor Technologies Corp. | Site based quantification of substrate topography and its relation to lithography defocus and overlay |
| US8625083B2 (en) * | 2011-03-12 | 2014-01-07 | Ken Roberts | Thin film stress measurement 3D anisotropic volume |
| WO2013120424A1 (zh) * | 2012-02-13 | 2013-08-22 | Fu Kang | 一种确定非线性薄膜应力的系统与方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107431030B (zh) | 2020-10-09 |
| US20160290789A1 (en) | 2016-10-06 |
| CN107431030A (zh) | 2017-12-01 |
| TW201702552A (zh) | 2017-01-16 |
| SG11201708137VA (en) | 2017-11-29 |
| JP6762317B2 (ja) | 2020-09-30 |
| KR102353250B1 (ko) | 2022-01-18 |
| KR20170136569A (ko) | 2017-12-11 |
| WO2016164415A1 (en) | 2016-10-13 |
| US10024654B2 (en) | 2018-07-17 |
| JP2018512738A (ja) | 2018-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI661175B (zh) | 用於判定在基板中之平面內扭曲之方法及系統 | |
| CN112041975B (zh) | 半导体生产期间的过程诱导位移表征 | |
| TWI736681B (zh) | 用於在晶圓沉積期間製程引起之變形預測之系統及方法 | |
| KR102723771B1 (ko) | 반도체 디바이스 제조 동안의 웨이퍼 특성화 데이터의 자동 상관 및 복합 웨이퍼 메트릭의 생성 | |
| KR102518197B1 (ko) | 기판 및 막 두께 분포를 측정하기 위한 시스템 및 방법 | |
| JP2016538717A (ja) | プロセス誘起による歪みの予測、ならびにオーバーレイ誤差のフィードフォワード及びフィードバック修正 | |
| CN110419098A (zh) | 晶片几何系统中的透明膜误差校正图案 | |
| CN111937129B (zh) | 工艺诱导的偏离特性化 | |
| WO2024129845A1 (en) | Determining process chamber component temperatures |