SG11201708137VA - Method and system for determining in-plane distortions in a substrate - Google Patents
Method and system for determining in-plane distortions in a substrateInfo
- Publication number
- SG11201708137VA SG11201708137VA SG11201708137VA SG11201708137VA SG11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- determining
- plane distortions
- distortions
- plane
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
- G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
- G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02027—Two or more interferometric channels or interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562143708P | 2015-04-06 | 2015-04-06 | |
US15/091,021 US10024654B2 (en) | 2015-04-06 | 2016-04-05 | Method and system for determining in-plane distortions in a substrate |
PCT/US2016/026148 WO2016164415A1 (en) | 2015-04-06 | 2016-04-06 | Method and system for determining in-plane distortions in a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201708137VA true SG11201708137VA (en) | 2017-11-29 |
Family
ID=57017441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201708137VA SG11201708137VA (en) | 2015-04-06 | 2016-04-06 | Method and system for determining in-plane distortions in a substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US10024654B2 (en) |
JP (1) | JP6762317B2 (en) |
KR (1) | KR102353250B1 (en) |
CN (1) | CN107431030B (en) |
SG (1) | SG11201708137VA (en) |
TW (1) | TWI661175B (en) |
WO (1) | WO2016164415A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10236222B2 (en) * | 2017-02-08 | 2019-03-19 | Kla-Tencor Corporation | System and method for measuring substrate and film thickness distribution |
EP3364247A1 (en) | 2017-02-17 | 2018-08-22 | ASML Netherlands B.V. | Methods & apparatus for monitoring a lithographic manufacturing process |
EP3457213A1 (en) * | 2017-09-18 | 2019-03-20 | ASML Netherlands B.V. | Methods and apparatus for use in a device manufacturing method |
US11300889B2 (en) | 2018-08-22 | 2022-04-12 | Asml Netherlands B.V. | Metrology apparatus |
KR20200090488A (en) | 2019-01-21 | 2020-07-29 | 삼성전자주식회사 | Semiconductor device manufacturing method using thereof |
TWI731760B (en) * | 2020-07-28 | 2021-06-21 | 亞亞科技股份有限公司 | Circuit board warpage detection device |
CN113203357B (en) * | 2021-04-09 | 2022-08-09 | 中国科学院上海光学精密机械研究所 | Bilateral Fizeau interferometer detection device |
US11940266B2 (en) * | 2021-09-21 | 2024-03-26 | The Aerospace Corporation | Process for rapidly measuring coefficient of moisture expansion (CME) values for materials |
US20230367941A1 (en) * | 2022-05-13 | 2023-11-16 | Applied Materials, Inc. | Dose mapping using substrate curvature to compensate for out-of-plane distortion |
CN117238812B (en) * | 2023-11-10 | 2024-04-05 | 四川省农业机械科学研究院 | Substrate warp measuring device and measuring method |
Family Cites Families (33)
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US5444538A (en) * | 1994-03-10 | 1995-08-22 | New Vision Systems, Inc. | System and method for optimizing the grid and intrafield registration of wafer patterns |
JPH09129635A (en) * | 1995-10-30 | 1997-05-16 | Mitsubishi Electric Corp | Semiconductor shape prediction simulation and system thereof |
AU2002346685A1 (en) * | 2001-05-25 | 2002-12-16 | California Institute Of Technology | Determining large deformations and stresses of layered and graded structures to include effects of body forces |
JP3892750B2 (en) * | 2002-04-12 | 2007-03-14 | 独立行政法人科学技術振興機構 | 3D feature region extraction device |
JP4464033B2 (en) | 2002-06-13 | 2010-05-19 | 信越半導体株式会社 | Semiconductor wafer shape evaluation method and shape evaluation apparatus |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
MY144124A (en) * | 2002-07-11 | 2011-08-15 | Molecular Imprints Inc | Step and repeat imprint lithography systems |
US7323130B2 (en) | 2002-12-13 | 2008-01-29 | Molecular Imprints, Inc. | Magnification correction employing out-of-plane distortion of a substrate |
US6847458B2 (en) * | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
JP2006004259A (en) * | 2004-06-18 | 2006-01-05 | Nec Corp | Design support system for electronic device, and design support system for multilayer printed circuit board |
US7418353B2 (en) | 2004-10-12 | 2008-08-26 | Wisconsin Alumni Research Foundation | Determining film stress from substrate shape using finite element procedures |
USD541979S1 (en) * | 2005-12-30 | 2007-05-01 | Crown Packaging Technology, Inc. | Spatula surface cosmetic applicator |
US7712068B2 (en) | 2006-02-17 | 2010-05-04 | Zhuoxiang Ren | Computation of electrical properties of an IC layout |
US8175831B2 (en) * | 2007-04-23 | 2012-05-08 | Kla-Tencor Corp. | Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers |
JP5634864B2 (en) | 2007-05-30 | 2014-12-03 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | Process control method and process control apparatus in lithographic process |
JP2009003529A (en) * | 2007-06-19 | 2009-01-08 | Sharp Corp | Model generation device, model generation method, and model generation program |
US7873585B2 (en) | 2007-08-31 | 2011-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for predicting a semiconductor parameter across an area of a wafer |
EP2324495A4 (en) | 2008-08-28 | 2013-06-05 | Kla Tencor Corp | Localized substrate geometry characterization |
US8068234B2 (en) * | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
CN101629859B (en) * | 2009-05-04 | 2011-04-20 | 付康 | System and method for determining thin-film stress based on deformation measurement and numerical reverse |
US8768665B2 (en) | 2010-01-08 | 2014-07-01 | Kla-Tencor Technologies Corporation | Site based quantification of substrate topography and its relation to lithography defocus and overlay |
WO2011101183A1 (en) * | 2010-02-19 | 2011-08-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product |
US8625083B2 (en) * | 2011-03-12 | 2014-01-07 | Ken Roberts | Thin film stress measurement 3D anisotropic volume |
US9354526B2 (en) | 2011-10-11 | 2016-05-31 | Kla-Tencor Corporation | Overlay and semiconductor process control using a wafer geometry metric |
CN103245437B (en) * | 2012-02-13 | 2017-02-08 | 付康 | System and method for determining nonlinear membrane stress |
KR101664962B1 (en) | 2012-05-29 | 2016-10-11 | 에이에스엠엘 네델란즈 비.브이. | A method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system |
US9430593B2 (en) | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
US9036157B2 (en) * | 2012-10-19 | 2015-05-19 | National Applied Research Laboratories | System of computing surface reconstruction, in-plane and out-of-plane displacements and strain distribution |
US20140152797A1 (en) * | 2012-12-04 | 2014-06-05 | Samsung Electronics Co., Ltd. | Confocal optical inspection apparatus and confocal optical inspection method |
US10401279B2 (en) | 2013-10-29 | 2019-09-03 | Kla-Tencor Corporation | Process-induced distortion prediction and feedforward and feedback correction of overlay errors |
US9087176B1 (en) | 2014-03-06 | 2015-07-21 | Kla-Tencor Corporation | Statistical overlay error prediction for feed forward and feedback correction of overlay errors, root cause analysis and process control |
US9311443B2 (en) | 2014-06-17 | 2016-04-12 | Globalfoundries Inc. | Correcting for stress induced pattern shifts in semiconductor manufacturing |
US10509329B2 (en) | 2014-09-03 | 2019-12-17 | Kla-Tencor Corporation | Breakdown analysis of geometry induced overlay and utilization of breakdown analysis for improved overlay control |
-
2016
- 2016-04-05 US US15/091,021 patent/US10024654B2/en active Active
- 2016-04-06 KR KR1020177032141A patent/KR102353250B1/en active IP Right Grant
- 2016-04-06 WO PCT/US2016/026148 patent/WO2016164415A1/en active Application Filing
- 2016-04-06 TW TW105110795A patent/TWI661175B/en active
- 2016-04-06 JP JP2017552449A patent/JP6762317B2/en active Active
- 2016-04-06 CN CN201680019869.8A patent/CN107431030B/en active Active
- 2016-04-06 SG SG11201708137VA patent/SG11201708137VA/en unknown
Also Published As
Publication number | Publication date |
---|---|
TWI661175B (en) | 2019-06-01 |
US10024654B2 (en) | 2018-07-17 |
CN107431030B (en) | 2020-10-09 |
KR20170136569A (en) | 2017-12-11 |
TW201702552A (en) | 2017-01-16 |
KR102353250B1 (en) | 2022-01-18 |
CN107431030A (en) | 2017-12-01 |
JP2018512738A (en) | 2018-05-17 |
US20160290789A1 (en) | 2016-10-06 |
WO2016164415A1 (en) | 2016-10-13 |
JP6762317B2 (en) | 2020-09-30 |
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