CN107316864A - 瞬态电压抑制器及其制作方法 - Google Patents
瞬态电压抑制器及其制作方法 Download PDFInfo
- Publication number
- CN107316864A CN107316864A CN201710564686.0A CN201710564686A CN107316864A CN 107316864 A CN107316864 A CN 107316864A CN 201710564686 A CN201710564686 A CN 201710564686A CN 107316864 A CN107316864 A CN 107316864A
- Authority
- CN
- China
- Prior art keywords
- type
- diode
- doped region
- transient voltage
- voltage suppressor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001052 transient effect Effects 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000407 epitaxy Methods 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims description 25
- 239000003989 dielectric material Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 238000003032 molecular docking Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710564686.0A CN107316864B (zh) | 2017-07-12 | 2017-07-12 | 瞬态电压抑制器及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710564686.0A CN107316864B (zh) | 2017-07-12 | 2017-07-12 | 瞬态电压抑制器及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107316864A true CN107316864A (zh) | 2017-11-03 |
CN107316864B CN107316864B (zh) | 2018-12-18 |
Family
ID=60178541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710564686.0A Active CN107316864B (zh) | 2017-07-12 | 2017-07-12 | 瞬态电压抑制器及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107316864B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108063137A (zh) * | 2017-12-11 | 2018-05-22 | 深圳迈辽技术转移中心有限公司 | 瞬态电压抑制器及其制作方法 |
CN109300786A (zh) * | 2018-10-08 | 2019-02-01 | 深圳市南硕明泰科技有限公司 | 瞬态电压抑制器及其制作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100321840A1 (en) * | 2009-06-17 | 2010-12-23 | Alpha & Omega Semiconductor, Inc. | Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) |
CN102290419A (zh) * | 2011-08-24 | 2011-12-21 | 浙江大学 | 一种基于齐纳二极管的瞬态电压抑制器 |
CN103354229A (zh) * | 2013-07-11 | 2013-10-16 | 江苏艾伦摩尔微电子科技有限公司 | 一种穿通型瞬态电压抑制器 |
CN204886173U (zh) * | 2015-08-20 | 2015-12-16 | 北京燕东微电子有限公司 | 瞬态电压抑制器 |
CN106098792A (zh) * | 2016-08-27 | 2016-11-09 | 上海长园维安微电子有限公司 | 双向电压完全对称带有超深沟槽超低漏电的tvs器件及制法 |
CN106129058A (zh) * | 2016-08-27 | 2016-11-16 | 上海长园维安微电子有限公司 | 沟槽引出集成型低压双向瞬时电压抑制器及其制造方法 |
-
2017
- 2017-07-12 CN CN201710564686.0A patent/CN107316864B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100321840A1 (en) * | 2009-06-17 | 2010-12-23 | Alpha & Omega Semiconductor, Inc. | Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) |
CN102290419A (zh) * | 2011-08-24 | 2011-12-21 | 浙江大学 | 一种基于齐纳二极管的瞬态电压抑制器 |
CN103354229A (zh) * | 2013-07-11 | 2013-10-16 | 江苏艾伦摩尔微电子科技有限公司 | 一种穿通型瞬态电压抑制器 |
CN204886173U (zh) * | 2015-08-20 | 2015-12-16 | 北京燕东微电子有限公司 | 瞬态电压抑制器 |
CN106098792A (zh) * | 2016-08-27 | 2016-11-09 | 上海长园维安微电子有限公司 | 双向电压完全对称带有超深沟槽超低漏电的tvs器件及制法 |
CN106129058A (zh) * | 2016-08-27 | 2016-11-16 | 上海长园维安微电子有限公司 | 沟槽引出集成型低压双向瞬时电压抑制器及其制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108063137A (zh) * | 2017-12-11 | 2018-05-22 | 深圳迈辽技术转移中心有限公司 | 瞬态电压抑制器及其制作方法 |
CN108063137B (zh) * | 2017-12-11 | 2020-09-01 | 南京溧水高新创业投资管理有限公司 | 瞬态电压抑制器及其制作方法 |
CN109300786A (zh) * | 2018-10-08 | 2019-02-01 | 深圳市南硕明泰科技有限公司 | 瞬态电压抑制器及其制作方法 |
CN109300786B (zh) * | 2018-10-08 | 2021-11-30 | 深圳市南硕明泰科技有限公司 | 瞬态电压抑制器及其制作方法 |
CN109300786B8 (zh) * | 2018-10-08 | 2021-12-24 | 电子科技大学中山学院 | 瞬态电压抑制器及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107316864B (zh) | 2018-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107301994B (zh) | 瞬态电压抑制器及其制作方法 | |
CN107359159B (zh) | 瞬态电压抑制器及其制作方法 | |
CN108054164B (zh) | 瞬态电压抑制器及其制作方法 | |
CN108063137B (zh) | 瞬态电压抑制器及其制作方法 | |
CN106449634A (zh) | 瞬态电压抑制器及其制造方法 | |
CN108063138B (zh) | 瞬态电压抑制器及其制作方法 | |
CN110034108B (zh) | 瞬态电压抑制器 | |
TW202010088A (zh) | 雙向式矽控整流器 | |
CN107301995A (zh) | 瞬态电压抑制器及其制作方法 | |
CN108063135A (zh) | 瞬态电压抑制器及其制作方法 | |
CN107316864B (zh) | 瞬态电压抑制器及其制作方法 | |
CN109256381B (zh) | 瞬时电压抑制装置 | |
KR930006143B1 (ko) | 반도체장치 | |
CN107316863B (zh) | 瞬态电压抑制器及其制作方法 | |
CN106298509B (zh) | 瞬态抑制二极管的制造方法和瞬态抑制二极管 | |
CN106298653B (zh) | 双向瞬态电压抑制器件及其制造方法 | |
TWI477018B (zh) | 暫態電壓抑制器電路與用於其中之二極體元件及其製造方法 | |
CN106898656A (zh) | 低电容tvs二极管及其制造方法 | |
CN104617158B (zh) | 一种具有超深沟槽的瞬态电压抑制器结构 | |
CN106298773A (zh) | 集成型沟槽瞬态电压抑制器件及其制造方法 | |
CN108109964A (zh) | 瞬态电压抑制器及其制作方法 | |
CN210443555U (zh) | 一种集成高密度静电防护芯片 | |
CN107342283B (zh) | 瞬态电压抑制器及其制作方法 | |
CN108091649A (zh) | 瞬态电压抑制器及其制作方法 | |
CN108063136A (zh) | 瞬态电压抑制器及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181105 Address after: 312000 Keqiao, Shaoxing, Keqiao, Zhejiang Keqiao East Industrial Park, the 6 sides of the Jeremiah Road 102 stories. Applicant after: Shaoxing Yiyue Intelligent Technology Co.,Ltd. Address before: 512444 No. 999, Tai Hang ancestral hall village, Shuikou village committee, Shuikou Town, Nanxiong, Shaoguan, Guangdong Applicant before: Sun Lifang |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221221 Address after: 300300-5156, block a, No. 6, Huafeng Road, Huaming high tech Industrial Zone, Dongli District, Tianjin Patentee after: Boxin semiconductor technology (Tianjin) Co.,Ltd. Address before: 312000 Keqiao, Shaoxing, Keqiao, Zhejiang Keqiao East Industrial Park, the 6 sides of the Jeremiah Road 102 stories. Patentee before: Shaoxing Yiyue Intelligent Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |