CN109300786B8 - 瞬态电压抑制器及其制作方法 - Google Patents

瞬态电压抑制器及其制作方法 Download PDF

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Publication number
CN109300786B8
CN109300786B8 CN201811167811.5A CN201811167811A CN109300786B8 CN 109300786 B8 CN109300786 B8 CN 109300786B8 CN 201811167811 A CN201811167811 A CN 201811167811A CN 109300786 B8 CN109300786 B8 CN 109300786B8
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China
Prior art keywords
manufacturing
substrate
transient voltage
voltage suppressor
etching
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CN201811167811.5A
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CN109300786A (zh
CN109300786B (zh
Inventor
于广
程羽佳
其他发明人请求不公开姓名
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University of Electronic Science and Technology of China Zhongshan Institute
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University of Electronic Science and Technology of China Zhongshan Institute
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Publication of CN109300786B publication Critical patent/CN109300786B/zh
Publication of CN109300786B8 publication Critical patent/CN109300786B8/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)

Abstract

本发明公开一种瞬态电压抑制器及其制作方法，该制作方法通过刻蚀第一导电类型的衬底并形成位于所述衬底内的正向沟槽；在所述正向沟槽内填充介质层；从所述衬底的侧表面刻蚀所述衬底并在所述衬底内形成延伸至所述介质层的侧向沟槽；在所述侧向沟槽内生长第二导电类型的外延层；在所述衬底的上表面和下表面分别覆盖第一金属层和第二金属层，从而形成瞬态电压抑制器。本发明所述制作方法制备得到的瞬态电压抑制器具有双向保护功能，且使用该方法制作瞬态电压抑制器，不仅成本低，而且制作周期短。
CN201811167811.5A 2018-10-08 2018-10-08 瞬态电压抑制器及其制作方法 Active CN109300786B8 (zh)

Priority Applications (1)

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CN201811167811.5A CN109300786B8 (zh) 2018-10-08 2018-10-08 瞬态电压抑制器及其制作方法

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CN201811167811.5A CN109300786B8 (zh) 2018-10-08 2018-10-08 瞬态电压抑制器及其制作方法

Publications (3)

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CN109300786A CN109300786A (zh) 2019-02-01
CN109300786B CN109300786B (zh) 2021-11-30
CN109300786B8 true CN109300786B8 (zh) 2021-12-24

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103840013A (zh) * 2014-01-26 2014-06-04 上海韦尔半导体股份有限公司 双向tvs二极管及其制造方法
CN105990320A (zh) * 2014-12-19 2016-10-05 力祥半导体股份有限公司 瞬态电压抑制器、其静电防护元件及其阵列
CN107316864A (zh) * 2017-07-12 2017-11-03 孙丽芳 瞬态电压抑制器及其制作方法
CN107689343A (zh) * 2016-08-05 2018-02-13 英飞凌科技股份有限公司 具有背侧金属结构的器件及其形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9941264B2 (en) * 2015-04-03 2018-04-10 Littelfuse, Inc. Transient overvoltage protection device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103840013A (zh) * 2014-01-26 2014-06-04 上海韦尔半导体股份有限公司 双向tvs二极管及其制造方法
CN105990320A (zh) * 2014-12-19 2016-10-05 力祥半导体股份有限公司 瞬态电压抑制器、其静电防护元件及其阵列
CN107689343A (zh) * 2016-08-05 2018-02-13 英飞凌科技股份有限公司 具有背侧金属结构的器件及其形成方法
CN107316864A (zh) * 2017-07-12 2017-11-03 孙丽芳 瞬态电压抑制器及其制作方法

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CN109300786A (zh) 2019-02-01
CN109300786B (zh) 2021-11-30

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PB01 Publication
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SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information

Inventor after: Yu Guang

Inventor after: Cheng Yujia

Inventor after: Other inventors ask not to disclose names

Inventor before: Not publicizing the inventor

CB03 Change of inventor or designer information
GR01 Patent grant
GR01 Patent grant
TA01 Transfer of patent application right

Effective date of registration: 20211123

Address after: 528400, Xueyuan Road, 1, Shiqi District, Guangdong, Zhongshan

Applicant after: University OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, ZHONGSHAN INSTITUTE

Address before: 518000 building 902, block 8, sijiyu garden, Liantang street, Luohu District, Shenzhen City, Guangdong Province

Applicant before: SHENZHEN NANSHUO MINGTAI TECHNOLOGY Co.,Ltd.

TA01 Transfer of patent application right
CI03 Correction of invention patent

Correction item: Patentee|Address|Patent agency|Agent

Correct: Zhongshan college, University of Electronic Science and technology|528400, Xueyuan Road, 1, Shiqi District, Guangdong, Zhongshan|Beijing Zhongqian Intellectual Property Agency (general partnership) 11825|Huang Zhao

False: Shenzhen nanshuo Mingtai Technology Co., Ltd|518000 building 902, block 8, sijiyu garden, Liantang street, Luohu District, Shenzhen City, Guangdong Province|Foshan zhijichen Patent Agency Co., Ltd. 44409|Cao Limin

Number: 49-01

Page: The title page

Volume: 37

Correction item: Patentee|Address|Patent agency|Agent

Correct: Zhongshan college, University of Electronic Science and technology|528400, Xueyuan Road, 1, Shiqi District, Guangdong, Zhongshan|Beijing Zhongqian Intellectual Property Agency (general partnership) 11825|Huang Zhao

False: Shenzhen nanshuo Mingtai Technology Co., Ltd|518000 building 902, block 8, sijiyu garden, Liantang street, Luohu District, Shenzhen City, Guangdong Province|Foshan zhijichen Patent Agency Co., Ltd. 44409|Cao Limin

Number: 49-01

Volume: 37

CI03 Correction of invention patent