CN107305880B - 集成电路 - Google Patents

集成电路 Download PDF

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Publication number
CN107305880B
CN107305880B CN201710263586.4A CN201710263586A CN107305880B CN 107305880 B CN107305880 B CN 107305880B CN 201710263586 A CN201710263586 A CN 201710263586A CN 107305880 B CN107305880 B CN 107305880B
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ground
integrated circuit
ground plane
line
stage
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Chinese (zh)
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CN107305880A (zh
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杉谷拓海
久留须整
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Mitsubishi Corp
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Mitsubishi Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/401—Resistive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/186—Indexing scheme relating to amplifiers the ground, reference potential being controlled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/216—Waveguides, e.g. strip lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H10W44/234—Arrangements for impedance matching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/251—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for monolithic microwave integrated circuits [MMIC]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
CN201710263586.4A 2016-04-20 2017-04-20 集成电路 Active CN107305880B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-084659 2016-04-20
JP2016084659A JP6620656B2 (ja) 2016-04-20 2016-04-20 集積回路

Publications (2)

Publication Number Publication Date
CN107305880A CN107305880A (zh) 2017-10-31
CN107305880B true CN107305880B (zh) 2020-01-17

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CN201710263586.4A Active CN107305880B (zh) 2016-04-20 2017-04-20 集成电路

Country Status (5)

Country Link
US (1) US10027282B2 (https=)
JP (1) JP6620656B2 (https=)
KR (1) KR101909815B1 (https=)
CN (1) CN107305880B (https=)
DE (1) DE102017204654B4 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088468A (ja) * 2018-11-19 2020-06-04 富士通株式会社 増幅器及び増幅装置
JP7424157B2 (ja) * 2020-03-25 2024-01-30 Tdk株式会社 電子部品及びその製造方法
TW202533401A (zh) * 2024-01-23 2025-08-16 美商谷歌有限責任公司 再分佈層（ｒｄｌ）扇出封裝設計與小晶片晶粒至晶粒互連佈線

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7116175B2 (en) * 2003-08-08 2006-10-03 Renesas Technology Corp. Semiconductor device

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JPS5632754A (en) * 1979-08-24 1981-04-02 Nec Corp Hybrid integrated circuit
US5010588A (en) * 1988-03-10 1991-04-23 Bell Communications Research, Inc. Ultrawide-bandwidth low-noise optical receiver
JPH11284401A (ja) * 1998-03-30 1999-10-15 Matsushita Electric Ind Co Ltd 高周波回路装置
JP2001156242A (ja) 1999-11-25 2001-06-08 Mitsubishi Electric Corp 多段増幅装置
JP4018312B2 (ja) * 2000-02-21 2007-12-05 株式会社ルネサステクノロジ 無線通信装置
CN101322240B (zh) * 2005-12-02 2011-12-14 国立大学法人东北大学 半导体装置
JP2009200119A (ja) * 2008-02-19 2009-09-03 Hitachi Kokusai Electric Inc 高周波モジュール
JP2010273117A (ja) 2009-05-21 2010-12-02 Nec Corp 増幅器
JP5893800B2 (ja) * 2012-06-14 2016-03-23 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. パワーアンプモジュールを含む関連するシステム、デバイス、および方法
WO2014145623A1 (en) * 2013-03-15 2014-09-18 Rf Micro Devices, Inc. Transformer-based power amplifier stabilization and reference distortion reduction
JP6439241B2 (ja) * 2013-10-15 2018-12-19 富士通株式会社 半導体装置
JP6293639B2 (ja) 2014-10-28 2018-03-14 三協立山株式会社 手すり

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7116175B2 (en) * 2003-08-08 2006-10-03 Renesas Technology Corp. Semiconductor device

Also Published As

Publication number Publication date
DE102017204654B4 (de) 2022-05-12
CN107305880A (zh) 2017-10-31
KR101909815B1 (ko) 2018-10-18
US10027282B2 (en) 2018-07-17
JP2017195510A (ja) 2017-10-26
JP6620656B2 (ja) 2019-12-18
KR20170120036A (ko) 2017-10-30
DE102017204654A1 (de) 2017-10-26
US20170310279A1 (en) 2017-10-26

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