CN107155367A - 利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂 - Google Patents
利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂 Download PDFInfo
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- CN107155367A CN107155367A CN201580043304.9A CN201580043304A CN107155367A CN 107155367 A CN107155367 A CN 107155367A CN 201580043304 A CN201580043304 A CN 201580043304A CN 107155367 A CN107155367 A CN 107155367A
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- Prior art keywords
- ammonium
- acid
- residue
- cleasing compositions
- composition
- Prior art date
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- Granted
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- 239000010941 cobalt Substances 0.000 title claims abstract description 30
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 30
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 30
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title description 11
- 229910052721 tungsten Inorganic materials 0.000 title description 11
- 239000010937 tungsten Substances 0.000 title description 10
- 239000012459 cleaning agent Substances 0.000 title description 3
- 239000000203 mixture Substances 0.000 claims abstract description 160
- 239000000463 material Substances 0.000 claims abstract description 100
- 238000004377 microelectronic Methods 0.000 claims abstract description 56
- 238000001020 plasma etching Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 33
- -1 tetramethyl ammonium hexafluorophosphate Chemical compound 0.000 claims description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 40
- 238000005260 corrosion Methods 0.000 claims description 34
- 239000003112 inhibitor Substances 0.000 claims description 34
- 230000007797 corrosion Effects 0.000 claims description 31
- 239000003960 organic solvent Substances 0.000 claims description 26
- 238000004140 cleaning Methods 0.000 claims description 20
- 230000001590 oxidative effect Effects 0.000 claims description 18
- 239000007800 oxidant agent Substances 0.000 claims description 17
- 239000002253 acid Substances 0.000 claims description 14
- 239000002736 nonionic surfactant Substances 0.000 claims description 14
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000012928 buffer substance Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- 230000003628 erosive effect Effects 0.000 claims description 12
- 239000004327 boric acid Substances 0.000 claims description 11
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 10
- 239000002585 base Substances 0.000 claims description 9
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 claims description 7
- SVMUEEINWGBIPD-UHFFFAOYSA-N dodecylphosphonic acid Chemical compound CCCCCCCCCCCCP(O)(O)=O SVMUEEINWGBIPD-UHFFFAOYSA-N 0.000 claims description 7
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 7
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 229920000136 polysorbate Polymers 0.000 claims description 6
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 5
- 229920001214 Polysorbate 60 Polymers 0.000 claims description 5
- 235000010323 ascorbic acid Nutrition 0.000 claims description 5
- 239000011668 ascorbic acid Substances 0.000 claims description 5
- 229960005070 ascorbic acid Drugs 0.000 claims description 5
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 claims description 5
- 229950008882 polysorbate Drugs 0.000 claims description 5
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 claims description 5
- OMAFFHIGWTVZOH-UHFFFAOYSA-O 1-methyl-2h-tetrazol-1-ium Chemical compound C[N+]1=CN=NN1 OMAFFHIGWTVZOH-UHFFFAOYSA-O 0.000 claims description 4
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 4
- OIRDTQYFTABQOQ-KQYNXXCUSA-N adenosine Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](CO)[C@@H](O)[C@H]1O OIRDTQYFTABQOQ-KQYNXXCUSA-N 0.000 claims description 4
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 4
- 229920001400 block copolymer Polymers 0.000 claims description 4
- YMKDRGPMQRFJGP-UHFFFAOYSA-M cetylpyridinium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 YMKDRGPMQRFJGP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229920000053 polysorbate 80 Polymers 0.000 claims description 4
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 claims description 4
- 229960002317 succinimide Drugs 0.000 claims description 4
- 150000003852 triazoles Chemical class 0.000 claims description 4
- BIGYLAKFCGVRAN-UHFFFAOYSA-N 1,3,4-thiadiazolidine-2,5-dithione Chemical compound S=C1NNC(=S)S1 BIGYLAKFCGVRAN-UHFFFAOYSA-N 0.000 claims description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 3
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 claims description 3
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical class NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229920001219 Polysorbate 40 Polymers 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229960000686 benzalkonium chloride Drugs 0.000 claims description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 3
- JBIROUFYLSSYDX-UHFFFAOYSA-M benzododecinium chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 JBIROUFYLSSYDX-UHFFFAOYSA-M 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 150000004679 hydroxides Chemical class 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 claims description 3
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- WAKHLWOJMHVUJC-FYWRMAATSA-N (2e)-2-hydroxyimino-1,2-diphenylethanol Chemical compound C=1C=CC=CC=1C(=N/O)\C(O)C1=CC=CC=C1 WAKHLWOJMHVUJC-FYWRMAATSA-N 0.000 claims description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 2
- NHAZGSRLKBTDBF-UHFFFAOYSA-N 1,2,4-triazol-1-amine Chemical class NN1C=NC=N1 NHAZGSRLKBTDBF-UHFFFAOYSA-N 0.000 claims description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical class NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 2
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical class SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 claims description 2
- HTZVLLVRJHAJJF-UHFFFAOYSA-M 1-decyl-3-methylimidazolium chloride Chemical class [Cl-].CCCCCCCCCCN1C=C[N+](C)=C1 HTZVLLVRJHAJJF-UHFFFAOYSA-M 0.000 claims description 2
- QAQSNXHKHKONNS-UHFFFAOYSA-N 1-ethyl-2-hydroxy-4-methyl-6-oxopyridine-3-carboxamide Chemical compound CCN1C(O)=C(C(N)=O)C(C)=CC1=O QAQSNXHKHKONNS-UHFFFAOYSA-N 0.000 claims description 2
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical class SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 2
- JUNAPQMUUHSYOV-UHFFFAOYSA-N 2-(2h-tetrazol-5-yl)acetic acid Chemical compound OC(=O)CC=1N=NNN=1 JUNAPQMUUHSYOV-UHFFFAOYSA-N 0.000 claims description 2
- XILPCSMEKCBYFO-UHFFFAOYSA-N 4-methyl-1,2,4-triazole Chemical compound CN1C=NN=C1 XILPCSMEKCBYFO-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical class N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- AJNQPSCMOSUVKK-UHFFFAOYSA-N 5-propan-2-yl-1h-1,2,4-triazole Chemical class CC(C)C=1N=CNN=1 AJNQPSCMOSUVKK-UHFFFAOYSA-N 0.000 claims description 2
- GFFGJBXGBJISGV-UHFFFAOYSA-N Adenine Chemical compound NC1=NC=NC2=C1N=CN2 GFFGJBXGBJISGV-UHFFFAOYSA-N 0.000 claims description 2
- 229930024421 Adenine Natural products 0.000 claims description 2
- 239000002126 C01EB10 - Adenosine Substances 0.000 claims description 2
- CXRFDZFCGOPDTD-UHFFFAOYSA-M Cetrimide Chemical compound [Br-].CCCCCCCCCCCCCC[N+](C)(C)C CXRFDZFCGOPDTD-UHFFFAOYSA-M 0.000 claims description 2
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 claims description 2
- QWZLBLDNRUUYQI-UHFFFAOYSA-M Methylbenzethonium chloride Chemical compound [Cl-].CC1=CC(C(C)(C)CC(C)(C)C)=CC=C1OCCOCC[N+](C)(C)CC1=CC=CC=C1 QWZLBLDNRUUYQI-UHFFFAOYSA-M 0.000 claims description 2
- FLCUFRXOCPMLPF-UHFFFAOYSA-N NC1(C(=O)O)CC(C(=O)O)=CC(=C1)C Chemical class NC1(C(=O)O)CC(C(=O)O)=CC(=C1)C FLCUFRXOCPMLPF-UHFFFAOYSA-N 0.000 claims description 2
- AYDQIZKZTQHYIY-UHFFFAOYSA-N OC(=O)C1(C)CC(C(O)=O)=CC=C1 Chemical class OC(=O)C1(C)CC(C(O)=O)=CC=C1 AYDQIZKZTQHYIY-UHFFFAOYSA-N 0.000 claims description 2
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 claims description 2
- CWRVKFFCRWGWCS-UHFFFAOYSA-N Pentrazole Chemical compound C1CCCCC2=NN=NN21 CWRVKFFCRWGWCS-UHFFFAOYSA-N 0.000 claims description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 2
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 claims description 2
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 claims description 2
- GCKVRHFRDJAIGL-UHFFFAOYSA-M [NH4+].[Br-].C(CCCCCCCCCCC)[P+](CC)(C)C.[Br-] Chemical compound [NH4+].[Br-].C(CCCCCCCCCCC)[P+](CC)(C)C.[Br-] GCKVRHFRDJAIGL-UHFFFAOYSA-M 0.000 claims description 2
- 229960000643 adenine Drugs 0.000 claims description 2
- 229960005305 adenosine Drugs 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims description 2
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 claims description 2
- 229960003872 benzethonium Drugs 0.000 claims description 2
- UREZNYTWGJKWBI-UHFFFAOYSA-M benzethonium chloride Chemical compound [Cl-].C1=CC(C(C)(C)CC(C)(C)C)=CC=C1OCCOCC[N+](C)(C)CC1=CC=CC=C1 UREZNYTWGJKWBI-UHFFFAOYSA-M 0.000 claims description 2
- 229960001950 benzethonium chloride Drugs 0.000 claims description 2
- 230000031709 bromination Effects 0.000 claims description 2
- 238000005893 bromination reaction Methods 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 239000004202 carbamide Substances 0.000 claims description 2
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 2
- 229960001231 choline Drugs 0.000 claims description 2
- RIPUKAXZALFIMA-UHFFFAOYSA-N decan-1-amine;hydrobromide Chemical class [Br-].CCCCCCCCCC[NH3+] RIPUKAXZALFIMA-UHFFFAOYSA-N 0.000 claims description 2
- PLMFYJJFUUUCRZ-UHFFFAOYSA-M decyltrimethylammonium bromide Chemical compound [Br-].CCCCCCCCCC[N+](C)(C)C PLMFYJJFUUUCRZ-UHFFFAOYSA-M 0.000 claims description 2
- XGTXYBOCSYLHCD-UHFFFAOYSA-N dihydrogen phosphate;dimethylazanium Chemical compound CNC.OP(O)(O)=O XGTXYBOCSYLHCD-UHFFFAOYSA-N 0.000 claims description 2
- SIYLLGKDQZGJHK-UHFFFAOYSA-N dimethyl-(phenylmethyl)-[2-[2-[4-(2,4,4-trimethylpentan-2-yl)phenoxy]ethoxy]ethyl]ammonium Chemical compound C1=CC(C(C)(C)CC(C)(C)C)=CC=C1OCCOCC[N+](C)(C)CC1=CC=CC=C1 SIYLLGKDQZGJHK-UHFFFAOYSA-N 0.000 claims description 2
- TWFQJFPTTMIETC-UHFFFAOYSA-N dodecan-1-amine;hydron;chloride Chemical class [Cl-].CCCCCCCCCCCC[NH3+] TWFQJFPTTMIETC-UHFFFAOYSA-N 0.000 claims description 2
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- JPWGUOFOCAZONZ-UHFFFAOYSA-N heptan-1-amine;hydrobromide Chemical class Br.CCCCCCCN JPWGUOFOCAZONZ-UHFFFAOYSA-N 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 150000002460 imidazoles Chemical class 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 238000002454 metastable transfer emission spectrometry Methods 0.000 claims description 2
- 229960002285 methylbenzethonium chloride Drugs 0.000 claims description 2
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 claims description 2
- UKLQXHUGTKWPSR-UHFFFAOYSA-M oxyphenonium bromide Chemical compound [Br-].C=1C=CC=CC=1C(O)(C(=O)OCC[N+](C)(CC)CC)C1CCCCC1 UKLQXHUGTKWPSR-UHFFFAOYSA-M 0.000 claims description 2
- 229960001125 oxyphenonium bromide Drugs 0.000 claims description 2
- 229960005152 pentetrazol Drugs 0.000 claims description 2
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 claims description 2
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 claims description 2
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 claims description 2
- 229940101027 polysorbate 40 Drugs 0.000 claims description 2
- 229940113124 polysorbate 60 Drugs 0.000 claims description 2
- 150000003217 pyrazoles Chemical class 0.000 claims description 2
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 claims description 2
- 229940081974 saccharin Drugs 0.000 claims description 2
- 235000019204 saccharin Nutrition 0.000 claims description 2
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 claims description 2
- 239000003760 tallow Substances 0.000 claims description 2
- 229950004288 tosilate Drugs 0.000 claims description 2
- SQFASPLWQUAIAT-UHFFFAOYSA-N triazin-4-ylmethanamine Chemical compound NCC1=CC=NN=N1 SQFASPLWQUAIAT-UHFFFAOYSA-N 0.000 claims description 2
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical class NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 claims description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 2
- GLFDLEXFOHUASB-UHFFFAOYSA-N trimethyl(tetradecyl)azanium Chemical compound CCCCCCCCCCCCCC[N+](C)(C)C GLFDLEXFOHUASB-UHFFFAOYSA-N 0.000 claims description 2
- 229940116269 uric acid Drugs 0.000 claims description 2
- IQFYYKKMVGJFEH-XLPZGREQSA-N Thymidine Chemical compound O=C1NC(=O)C(C)=CN1[C@@H]1O[C@H](CO)[C@@H](O)C1 IQFYYKKMVGJFEH-XLPZGREQSA-N 0.000 claims 2
- 150000003851 azoles Chemical class 0.000 claims 2
- 150000001869 cobalt compounds Chemical class 0.000 claims 2
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- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- QPUMEZIFDXYGPG-UHFFFAOYSA-N piperazine 1H-pyrrole Chemical compound N1CCNCC1.N1C=CC=C1 QPUMEZIFDXYGPG-UHFFFAOYSA-N 0.000 description 1
- 229920001992 poloxamer 407 Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910000343 potassium bisulfate Inorganic materials 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical class OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- KRIOVPPHQSLHCZ-UHFFFAOYSA-N propiophenone Chemical compound CCC(=O)C1=CC=CC=C1 KRIOVPPHQSLHCZ-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- FGVVTMRZYROCTH-UHFFFAOYSA-N pyridine-2-thiol N-oxide Chemical compound [O-][N+]1=CC=CC=C1S FGVVTMRZYROCTH-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229960001922 sodium perborate Drugs 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 235000011067 sorbitan monolaureate Nutrition 0.000 description 1
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 1
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Inorganic materials [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- 229960003495 thiamine Drugs 0.000 description 1
- DPJRMOMPQZCRJU-UHFFFAOYSA-M thiamine hydrochloride Chemical compound Cl.[Cl-].CC1=C(CCO)SC=[N+]1CC1=CN=C(C)N=C1N DPJRMOMPQZCRJU-UHFFFAOYSA-M 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- WBWDWFZTSDZAIG-UHFFFAOYSA-M thonzonium bromide Chemical compound [Br-].N=1C=CC=NC=1N(CC[N+](C)(C)CCCCCCCCCCCCCCCC)CC1=CC=C(OC)C=C1 WBWDWFZTSDZAIG-UHFFFAOYSA-M 0.000 description 1
- 229940051002 thonzonium bromide Drugs 0.000 description 1
- 210000001541 thymus gland Anatomy 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- UYPYRKYUKCHHIB-UHFFFAOYSA-N trimethylamine N-oxide Chemical compound C[N+](C)(C)[O-] UYPYRKYUKCHHIB-UHFFFAOYSA-N 0.000 description 1
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 description 1
- IAEGWXHKWJGQAZ-UHFFFAOYSA-N trimethylpyrazine Chemical class CC1=CN=C(C)C(C)=N1 IAEGWXHKWJGQAZ-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229940032912 zephiran Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/008—Polymeric surface-active agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/662—Carbohydrates or derivatives
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/667—Neutral esters, e.g. sorbitan esters
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/361—Phosphonates, phosphinates or phosphonites
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3707—Polyethers, e.g. polyalkyleneoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
本发明揭示用于从上面具有等离子蚀刻后残余物的微电子装置清除所述残余物的清洁组合物及工艺。所述组合物实现所述残余物材料从所述微电子装置的高度有效清除,同时又不损坏也存在于所述微电子装置上的层间电介质、金属互连材料及/或帽盖层,所述残余物材料包括含钛蚀刻后残余物、含铜蚀刻后残余物、含钨蚀刻后残余物及/或含钴蚀刻后残余物。
Description
技术领域
本发明涉及用于从微电子装置移除包含含钛蚀刻后残余物、含钴蚀刻后残余物、含钨蚀刻后残余物及/或含铜蚀刻后残余物等蚀刻后残余物的组合物以及制作及使用所述组合物的方法。
背景技术
半导体电路中的互连电路由被绝缘电介质材料环绕的导电金属电路组成。在过去,广泛地使用从原硅酸四乙酯(TEOS)气相沉积的硅酸盐玻璃用作电介质材料,而使用铝合金用于金属互连件。对较高处理速度的需求已致使电路元件的大小变得较小且TEOS及铝合金被较高性能材料替换。由于铜的较高导电性,已用铜或铜合金替换铝合金。已用所谓的低k电介质替换TEOS及氟化硅酸盐玻璃(FSG),所述低k电介质包含例如有机聚合物的低极性材料、混合有机/无机材料、有机硅酸盐玻璃(OSG)及碳掺杂氧化硅(CDO)玻璃。这些材料中的多孔结构(即,充气孔)的并入进一步降低材料的介电常数。
在集成电路的双镶嵌处理期间,使用光学光刻来将图案成像到装置晶片上。光学光刻技术包括涂覆、暴露及显影步骤。晶片先被正性或负性光致抗蚀剂物质涂覆且随后被掩模覆盖,所述掩模界定在后续工艺中将保留或移除的图案。在将掩模适当定位之后,引导单色辐射射束(例如紫外(UV)光或深UV(DUV)光(≈250nm或193nm))穿过掩模,以使所暴露光致抗蚀剂材料或多或少可溶于选定冲洗溶液中。接着将可溶性光致抗蚀剂材料移除或使可溶性光致抗蚀剂材料“显影”,从而留下等同于掩模的图案。
此外,使用气相等离子蚀刻来将经显影光致抗蚀剂涂层的图案转印到下伏层,所述下伏层可包含硬掩模、层间电介质(ILD)及/或蚀刻停止层。等离子蚀刻后残余物通常沉积在后段工艺(BEOL)结构上,且如果不进行移除,那么可妨碍后续硅化或触点形成。等离子蚀刻后残余物通常包含衬底上及等离子气体中存在的化学元素。举例来说,如果采用TiN硬掩模(例如)作为ILD上方的帽盖层,那么等离子蚀刻后残余物包含使用常规湿法清洁化学物质难以移除的含钛物质。此外,常规清洁化学物质通常会损坏ILD、被吸收到ILD的孔隙中借此增加介电常数及/或腐蚀金属结构。举例来说,经缓冲氟化物及基于溶剂的化学物质无法完全移除含Ti残余物,而含羟胺化学物质及氨-过氧化氢化学物质会腐蚀铜。
除需要移除含钛等离子蚀刻后残余物之外,还优选地移除在等离子蚀刻后工艺期间沉积的额外材料,例如经图案化装置的侧壁上的聚合物残余物、装置的开放式通孔结构中的含铜残余物以及含钴及/或含钨残余物。迄今为止,尚没有任何单种湿法清洁组合物既能够成功地移除所有残余物材料,同时又可与ILD、其它低k电介质材料及金属互连材料兼容。
将新材料(例如低k电介质)集成到微电子装置中对清洁性能提出新要求。同时,不断紧缩的装置尺寸减小临界尺寸的改变的公差且对装置元件造成损坏。为满足新材料的要求,可修改蚀刻条件。同样地,必须修改等离子蚀刻后清洁组合物。清洁剂不应损坏下伏电介质材料或腐蚀装置上的金属互连件材料,例如,铜、钨、钴、铝、钌、钛以及其氮化物及硅化物。
为此,本发明的目标是提供用于有效地从微电子装置移除等离子蚀刻后残余物的组合物及方法,所述等离子蚀刻后残余物包含但不限于含钛残余物、聚合侧壁残余物、含铜通孔残余物、含钨残余物及/或含钴残余物,所述组合物可与ILD、金属互连材料及/或帽盖层兼容。
发明内容
本发明一般来说涉及清洁组合物以及制作及使用所述清洁组合物的方法。本发明的一个方面涉及用于从上面具有等离子蚀刻后残余物的微电子装置清除所述残余物同时又不损害微电子装置表面上的金属及ILD材料的组合物及工艺。
在一个方面中,描述一种含水清洁组合物,所述含水清洁组合物包括至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质、任选地至少一种额外腐蚀抑制剂及任选地至少一种氧化剂,其中所述含水清洁组合物适于从上面具有等离子蚀刻后残余物的微电子装置清除所述残余物。
在另一方面中,描述一种从上面具有材料的微电子装置移除所述材料的方法,所述方法包括使所述微电子装置与含水清洁组合物接触达足以从所述微电子装置至少部分地移除所述材料的时间,其中所述含水清洁组合物包括至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质、任选地至少一种额外腐蚀抑制剂及任选地至少一种氧化剂。
依据以下揭示内容及所附权利要求书将更全面地明了本发明的其它方面、特征及优点。
具体实施方式
本发明一般来说涉及用于从上面具有残余物的微电子装置移除所述残余物的组合物,所述残余物优选地为蚀刻后残余物、更优选地为含钛蚀刻后残余物、聚合侧壁残余物、含钴蚀刻后残余物、含铜通孔及线路残余物及/或含钨蚀刻后残余物,所述组合物优选地可与微电子装置表面上的超低k(ULK)ILD材料(例如OSG及多孔CDO)、金属互连件材料(例如,铜及钨)、硬掩模帽盖层(例如,TiN)及钴帽盖层(例如CoWP)兼容。此外,本发明一般来说涉及使用组合物从上面具有残余物的微电子装置移除所述残余物的方法,所述残余物优选地为蚀刻后残余物、更优选地为含钛蚀刻后残余物、聚合侧壁残余物、含铜通孔及线路残余物、含钨蚀刻后残余物及/或含钴蚀刻后残余物,所述组合物优选地可与微电子装置表面上的超低k(ULK)ILD材料、金属互连件材料及帽盖层兼容。
为便于参考,“微电子装置”对应于半导体衬底、平板显示器、相变存储器装置、太阳能面板以及经制造供在微电子器件、集成电路、能量收集或计算机芯片应用中使用的其它产品,包含太阳能电池装置、光伏及微机电系统(MEMS)。应理解,术语“微电子装置”并非意欲以任何方式为限制性的且包含最终将成为微电子装置或微电子组合件的任何衬底或结构。注意,微电子装置衬底可是经图案化衬底、毯覆式衬底及/或测试衬底。
如本文中所使用的“蚀刻后残余物”及“等离子蚀刻后残余物”对应于在气相等离子蚀刻工艺(例如,BEOL双镶嵌处理)之后剩余的材料。蚀刻后残余物本质上可是有机的、有机金属的、有机硅的或无机的,举例来说,含硅材料、含钛材料、含氮材料、含氧材料、聚合物残余物材料、含铜残余物材料(包含氧化铜残余物)、含钨残余物材料、含钴残余物材料、蚀刻气体残余物(例如氯及氟)及其组合。
如本文中所定义,“低k电介质材料”及ULK对应于用作分层微电子装置中的电介质材料的任何材料,其中所述材料具有小于约3.5的介电常数。优选地,低k电介质材料包含低极性材料,例如含硅有机聚合物、含硅混合有机/无机材料、有机硅酸盐玻璃(OSG)、TEOS、氟化硅酸盐玻璃(FSG)、二氧化硅及碳掺杂氧化硅(CDO)玻璃。最优选地,使用有机硅烷及/或有机硅氧烷前驱物来沉积低k电介质材料。应了解,低k电介质材料可具有变化的密度及变化的多孔性。
如本文中所定义,术语“聚合侧壁残余物”对应于在等离子蚀刻后工艺之后留在经图案化装置的侧壁的残余物。残余物本质上是基本上聚合的,然而,应了解,侧壁残余物中也可能存在无机物,例如,钛、硅、钨、钴及/或含铜物质。
如本文中所使用,“约”用于对应于标注值的±5%。
如本文中所使用,用于从上面具有蚀刻后残余物的微电子装置清除所述残余物的“适合性”对应于从微电子装置至少部分地移除的所述残余物。优选地,从微电子装置移除想要移除的材料中的一或多者的至少约90%、更优选地想要移除的材料中的一或多者的至少95%且最优选地想要移除的材料中的一或多者的至少99%。
如本文中所使用的“帽盖层”对应于沉积在电介质材料及/或金属材料(例如,钴)上方以在等离子蚀刻步骤期间保护所述电介质材料及/或金属材料的材料。硬掩模帽盖层通常为硅、氮化硅、氮氧化硅、氮化钛、氮氧化钛、钛、钽、氮化钽、钼、钨、其组合及其它类似化合物。钴帽盖层包含CoWP以及其它含钴材料或含钨材料。
如本文中所定义,“金属互连件材料”包含但不限于铜、钨、钴、铝、钌、钛以及其氮化物及硅化物。
“基本上没有”在本文中定义为小于2wt.%、优选地小于1wt.%、更优选地小于0.5wt.%且最优选地小于0.1wt.%。
如本文中所使用,术语“半含水”是指水与有机组分的混合物。
如本文中所定义,“碱金属及碱土金属氢氧化物盐”包含LiOH、NaOH、KOH、RbOH、CsOH、Mg(OH)2、Ca(OH)2、Sr(OH)2及Ba(OH)2。
本发明的组合物可以各种各样的具体调配物体现,如下文中更全面地描述。
在所有此类组合物中,其中参考包含零下限的重量百分比范围而论述组合物的具体组分,将理解,此些组分可存在或不存在于组合物的各种具体实施例中,且在其中存在此些组分的例子中,所述组分可基于其中采用此些组分的组合物的总重量以低至0.001重量百分比的浓度而存在。
众所周知,使用现有技术的含氨组合物难以移除含钛蚀刻后残余物材料。本发明人发现了一种基本上没有氨及/或碱金属及碱土金属氢氧化物盐(例如,NaOH、KOH等)的清洁组合物,所述清洁组合物有效地且选择性地从上面具有含钛残余物的微电子装置的表面移除含钛残余物。另外,所述组合物将在基本上损坏下伏ILD、金属互连材料(例如,Cu、Al、Co及W)及/或帽盖层的情况下基本上移除聚合侧壁残余物、含铜残余物、含钴残余物及/或含钨残余物。此外,不管是先蚀刻沟槽还是先蚀刻通孔(即,沟槽优先或通孔优先方案),均可使用所述组合物。
在第一方面中,描述第一清洁组合物,其中第一清洁组合物是含水或半含水的,且包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质及任选地至少一种氧化剂,其等用于从上面具有等离子蚀刻后残余物的微电子装置的表面移除所述等离子蚀刻后残余物,其中等离子蚀刻后残余物包括选自由含钛残余物、聚合物残余物、含铜残余物、含钨残余物、含钴残余物及其组合组成的群组的物质。在另一实施例中,第一清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、至少一种有机溶剂、任选地至少一种缓冲物质及任选地至少一种氧化剂。在又一实施例中,第一清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质、任选地至少一种额外腐蚀抑制剂及任选地至少一种氧化剂。在又一实施例中,第一清洁组合物是含水的或半含水的,且包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、至少一种有机溶剂、任选地至少一种缓冲物质、任选地至少一种额外腐蚀抑制剂及任选地至少一种氧化剂。在又一实施例中,第一清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、至少一种额外腐蚀抑制剂、任选地至少一种缓冲物质、任选地至少一种有机溶剂及任选地至少一种氧化剂。在又一实施例中,第一清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、至少一种额外腐蚀抑制剂、至少一种有机溶剂、任选地至少一种缓冲物质及任选地至少一种氧化剂。优选地,基于组合物的总重量,存在的水量介于从约50wt%到约99.5wt%的范围内。第一清洁组合物的pH范围为4到14、优选地约6到约14、甚至更优选地约6到约10或约8到约13。
在一个实施例中,用于清除选自由含钛残余物、聚合物残余物、含铜残余物、含钨残余物、含钴残余物及其组合组成的群组的等离子蚀刻后残余物的第一清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质及任选地至少一种氧化剂,其等基于组合物的总重量以以下范围存在。
在一个实施例中,用于清除选自由含钛残余物、聚合物残余物、含铜残余物、含钨残余物、含钴残余物及其组合组成的群组的等离子蚀刻后残余物的第一清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质、任选地至少一种额外腐蚀抑制剂及任选地至少一种氧化剂,其等基于组合物的总重量以以下范围存在。
在广泛实践中,第一清洁组合物可包括以下各项、由以下各项组成或基本上由以下各项组成:(i)至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂及水;(ii)至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水及至少一种有机溶剂;(iii)至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水及至少一种氧化剂;(iv)至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、至少一种有机溶剂及至少一种氧化剂;(v)至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水及至少一种缓冲物质;(vi)至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂及水;(vii)至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水及至少一种有机溶剂;(viii)至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水及至少一种氧化剂;(ix)至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、至少一种有机溶剂及至少一种氧化剂;(x)至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水及至少一种缓冲物质。第一清洁组合物的pH范围为4到14、优选地约6到约14、甚至更优选地约6到约10或约8到约13。
包含水以充当溶剂且有助于溶解残余物,例如,可溶于水的氧化铜残余物。水优选是去离子化的。
在优选实施例中,第一清洁组合物在与想要清洁的衬底接触之前基本上没有化学机械抛光研磨材料。
蚀刻剂源有助于使蚀刻后残余物物质破碎且增溶,从而帮助移除聚合物侧壁残余物。本文中所涵盖的蚀刻剂源包含但不限于:氢氟酸(HF);氟硅酸(H2SiF6);氟硼酸;氟硅酸铵盐((NH4)2SiF6);四甲基六氟磷酸铵;氟化铵;氟氢化铵;分别具有化学式NR4BF4及PR4BF4的四氟硼酸季铵盐及四氟硼酸季膦盐,其中R可彼此相同或不同且选自由氢、直链型、支化型或环状C1-C6烷基(例如,甲基、乙基、丙基、丁基、戊基、己基)及直链型或支化型C6-C10芳基(例如,苄基)组成的群组;四丁基四氟硼酸铵(TBA-BF4);及其组合。优选地,蚀刻剂源包括氟化铵、氟氢化铵、四氟硼酸季铵盐(例如,四甲基四氟硼酸铵、四乙基四氟硼酸铵、四丙基四氟硼酸铵、四丁基四氟硼酸铵)、四氟硼酸季膦盐或其组合。优选地,蚀刻剂源包括氟氢化铵、氟化铵或其组合。所属领域的技术人员应了解,四氟硼酸季铵盐及四氟硼酸季膦盐可以是原位产生的。
金属腐蚀抑制剂用于消除对金属(例如,铜、钨及/或钴互连金属)的过蚀刻。优选腐蚀抑制剂包含:非离子表面活性剂,例如PolyFox PF-159(欧诺法公司(OMNOVASolutions));聚(乙二醇)(“PEG”);聚(丙二醇)(“PPG”);环氧乙烷/环氧丙烷嵌段共聚物,例如普朗尼克(Pluronic)F-127(巴斯夫公司(BASF));聚山梨酸酯(例如,聚氧乙烯(20)山梨糖醇酐单油酸酯(吐温(Tween)80)、聚氧乙烯(20)山梨糖醇酐单硬脂酸酯(吐温60)、聚氧乙烯(20)山梨糖醇酐单棕榈酸酯(吐温40)、聚氧乙烯(20)山梨糖醇酐单月桂酸酯(吐温20));聚氧丙烯/聚氧乙烯嵌段共聚物(例如,普朗尼克L31、普朗尼克31R1、普朗尼克25R2及普朗尼克25R4);及其组合。除至少一种非离子表面活性剂之外,还可添加至少一种额外腐蚀抑制剂,包含但不限于:唑类,例如5-氨基四唑、5-苯基-苯并三唑、1H-四唑-5-乙酸、1-苯基-2-四氮唑-5-硫酮、苯并咪唑、甲基四唑、铋试剂I(BismuthiolI)、胞嘧啶、鸟嘌呤、胸腺嘧啶、吡唑、亚氨基二乙酸(IDA)、丙硫醇、苯甲羟肟酸、柠檬酸、抗坏血酸、5-氨基-l,3,4-噻二唑-2-硫醇(ATDT)、苯并三唑(BTA)、1,2,4-三唑(TAZ)、甲苯基三唑、5-甲基-苯并三唑(mBTA)、5-苯基-苯并三唑、5-硝基-苯并三唑、苯并三唑羧酸、3-氨基-5-巯基-l,2,4-三唑、1-氨基-1,2,4-三唑、羟基苯并三唑、2-(5-氨基-戊基)-苯并三唑、1-氨基-1,2,3-三唑、1-氨基-5-甲基-1,2,3-三唑、3-氨基-1,2,4-三唑(3-ATA)、3-巯基-1,2,4-三唑、3-异丙基-1,2,4-三唑、5-苯基硫醇-苯并三唑、卤代-苯并三唑(卤基=F、Cl、Br或I)、萘并三唑、2-巯基苯并咪唑(MBI)、2-巯基苯并噻唑、4-甲基-2-苯基咪唑、2-巯基噻唑啉、5-氨基-1,2,4-三唑(5-ATA)、十二烷基硫酸钠(SDS)、ATA-SDS、3-氨基-5-巯基-1,2,4-三唑、戊四唑、5-苯基-1H-四唑、5-苄基-1H-四唑、Ablumine O(台界化学公司(Taiwan Surfactant))、2-苄基吡啶、琥珀酰亚胺、2,4-二氨基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑烷酮、1,5-五亚甲基四唑、1-苯基-5-巯基四唑、二氨基甲基三嗪、咪唑啉硫酮、4-甲基-4H-1,2,4-三唑-3-硫醇、4-氨基-4H-1,2,4-三唑、3-氨基-5-甲硫基-1H-1,2,4-三唑、苯并噻唑、咪唑、苯并异二唑(indiazole)、腺嘌呤、琥珀酰亚胺、腺苷、咔唑、糖精、尿酸、苯偶姻肟、阳离子型季铵盐(例如,苯扎氯铵、十二烷基二甲基苄基氯化铵、十四烷基三甲基溴化铵、十二烷基三甲基溴化铵、十六烷基吡啶氯化物、Aliquat 336(科宁公司(Cognis))、苄基二甲基苯基氯化铵、Crodaquat TES(禾大公司(Croda Inc.))、Rewoquat CPEM(威科公司(Witco))、十六烷基三甲基对甲苯磺酸铵、十六烷基三甲基氢氧化铵、1-甲基-1'-十四烷基-4,4'-联吡啶二氯化物、烷基三甲基溴化铵、盐酸氨丙林、氢氧化苄乙铵、苄索氯铵、十六烷基二甲基苄基氯化铵、十四烷基二甲基苄基氯化铵、十二烷基二甲基苄基溴化铵、十二烷基二甲基苄基氯化铵、十六烷基吡啶氯化物、胆碱对甲苯磺酸盐、二甲基双十八烷基溴化铵、十二烷基二甲基乙基溴化铵、十二烷基三甲基氯化铵、十六烷基二甲基乙基溴化铵、吉拉尔特试剂、十六烷基(2-羟乙基)二甲基磷酸二氢铵、十六烷基吡啶溴化物、十六烷基三甲基溴化铵、十六烷基三甲基氯化铵、甲基苄索氯铵、1622、LuviquatTM、N,N',N'-聚氧乙烯(10)-N-牛脂基-1,3-二氨基丙烷液体、奥芬溴铵、四庚基溴化铵、四(癸基)溴化铵、通佐溴铵、三(十二烷基)氯化铵、十八烷基三甲基溴化铵、1-甲基-3-正辛基咪唑四氟硼酸盐、1-癸基-3-甲基咪唑四氟硼酸盐、1-癸基-3-甲基咪唑氯化物、三(十二烷基)甲基溴化铵、二甲基二硬脂基氯化铵、十六烷基三甲基溴化铵、十四烷基三甲基溴化铵及六甲基氯化铵)、阴离子表面活性剂(例如,十二烷基苯磺酸、十二烷基苯磺酸钠、十二烷基膦酸(DDPA),及其组合)。所属领域的技术人员将显而易见,虽然市场上可买到季铵盐,但大部分通常为氯化物或溴化物,其很容易发生卤化物阴离子与非卤化物阴离子(例如硫酸盐、甲磺酸盐、硝酸盐、氢氧化物等)的离子交换。还可添加的适合钨腐蚀抑制剂包含但不限于:环丁砜、2-巯基噻唑啉、2,3,5-三甲基吡嗪、2-乙基-3,5-二甲基吡嗪、喹喔啉、乙酰吡咯、哒嗪、组氨酸、吡嗪、甘氨酸、苯并咪唑、苯并三唑(BTA)、亚氨基二乙酸(IDA)、谷胱甘肽(经还原)、半胱氨酸、2-巯基苯并咪唑、胱氨酸、噻吩、巯基吡啶N-氧化物、硫胺素HCl、二硫化四乙基秋兰姆、1,2,4-三唑、2,5-二巯基-1,3-噻二唑抗坏血酸、抗坏血酸及其组合,优选地环丁砜、吡嗪、甘氨酸、组氨酸、抗坏血酸及其组合。在特别优选实施例中,第一清洁组合物中包含聚山梨酸酯(例如,吐温80/60/40/20),且可进一步包含唑类(例如,5-ATA、3-ATA)及DDPA或其组合。
可包含低k钝化剂以减少对低k层的化学侵蚀并保护晶片免受额外氧化反应。硼酸是目前优选低k钝化剂,但出于上述目的有利地还可采用其它羟基添加剂,例如,3-羟基-2-萘甲酸、丙二酸、亚氨基二乙酸、五硼酸铵、尿素、甲基三乙氧基硅烷及其混合物。优选地,低k钝化剂包括亚氨基二乙酸、硼酸或其组合。当存在时,组合物包含基于组合物的总重量为至少0.01wt%的低k钝化剂,优选地至少0.1%。优选地,使用本文中所描述的移除组合物来蚀刻/移除基于下伏低k材料的总重量为小于2wt.%的下伏低k材料,更优选地小于1wt.%、最优选地小于0.5wt.%。
当存在时,有机溶剂有助于使含水清洁组合物及有机残余物的组分增溶、使微电子装置结构的表面变湿以促进残余物的移除、防止残余物再沉积及/或使下伏材料(例如,ULK)钝化。本文中所涵盖的有机溶剂包含但不限于:醇、醚、吡咯烷酮、二醇、胺及二醇醚,包含但不限于甲醇、乙醇、异丙醇、丁醇及高级醇(例如C2-C4二醇及C2-C4三醇)、四氢糠醇(THFA)、卤代醇(例如3-氯-1,2-丙二醇、3-氯-1-丙硫醇、1-氯-2-丙醇、2-氯-1-丙醇、3-氯-1-丙醇、3-溴-1,2-丙二醇、1-溴-2-丙醇、3-溴-1-丙醇、3-碘-1-丙醇、4-氯-1-丁醇、2-氯乙醇)、二氯甲烷、三氯甲烷、乙酸、丙酸、三氟乙酸、四氢呋喃(THF)、N-甲基吡咯烷酮(NMP)、环己基吡咯烷酮、N-辛基吡咯烷酮、N-苯基吡咯烷酮、甲基二乙醇胺、甲酸甲酯、二甲基甲酰胺(DMF)、二甲基亚砜(DMSO)、四亚甲基砜(环丁砜)、乙醚、苯氧基-2-丙醇(PPh)、苯丙酮、乳酸乙酯、乙酸乙酯、苯甲酸乙酯、乙腈、丙酮、乙二醇、丙二醇(PG)、1,3-丙二醇、1,4-丙二醇、二氧杂环己烷、丁酰内酯、碳酸丁二酯、碳酸乙二酯、碳酸丙二酯、二丙二醇、二乙二醇单甲醚、三乙二醇单甲醚、二乙二醇单乙醚、三乙二醇乙醚、乙二醇单丙醚、乙二醇单丁醚、二乙二醇单丁醚(即,丁基卡必醇)、三乙二醇单丁醚、乙二醇单己醚、二乙二醇单己醚、乙二醇苯基醚、丙二醇甲醚、二丙二醇甲醚(DPGME)、三丙二醇甲醚(TPGME)、二丙二醇二甲醚、二丙二醇乙醚、丙二醇正丙醚、二丙二醇正丙醚(DPGPE)、三丙二醇正丙醚、丙二醇正丁醚、二丙二醇正丁醚、三丙二醇正丁醚、丙二醇苯基醚、二丙二醇甲醚乙酸酯、四乙二醇二甲醚(TEGDE)、二元酯、甘油碳酸酯、N-甲酰基吗啉、磷酸三乙酯,及其组合。另外,有机溶剂可包括其它两亲性物质,即,类似于表面活性剂的含有亲水基团及疏水基团两者的物质。通常可通过包含由碳氢化合物或碳氟化合物群组组成的分子群组而获得疏水性质,且通常可通过离子或不带电极性官能团而获得亲水性质。优选地,有机溶剂包含三丙二醇甲醚(TPGME)、二丙二醇甲醚(DPGME)、丙二醇及其组合。当存在时,组合物包含基于组合物的总重量为约0.01wt%到约20wt%的有机溶剂,优选地5wt%到20wt%。
所涵盖的缓冲物质包含磷酸盐(例如,磷酸氢二铵、磷酸二氢铵、磷酸铵)及具有化学式NR1R2R3R4OH的氢氧化季铵,其中R1、R2、R3及R4彼此相同或不同且选自由以下各项组成的群组:C1-C6烷基、C6-C10芳基及其组合(例如,四乙基氢氧化铵(TEAH)、四甲基氢氧化铵(TMAH)、四丙基氢氧化铵(TPAH)、四丁基氢氧化铵(TBAH)、三丁基甲基氢氧化铵(TBMAH)、苄基三甲基氢氧化铵(BTMAH))。当存在时,组合物包含基于组合物的总重量为约0.1wt%到约20wt%的缓冲物质。
当存在时,氧化剂包含但不限于:过氧化氢(H2O2)、FeCl3、FeF3、Fe(NO3)3、Sr(NO3)2、CoF3、MnF3、过硫酸氢钾制剂(2KHSO5KHSO4·K2SO4)、高碘酸、碘酸、氧化钒(V)、氧化钒(IV、V)、钒酸铵、多原子铵盐(例如,过氧单硫酸铵、亚氯酸铵(NH4ClO2)、氯酸铵(NH4ClO3)、碘酸铵(NH4IO3)、硝酸铵(NH4NO3)、过硼酸铵(NH4BO3)、高氯酸铵(NH4ClO4)、高碘酸铵(NH4IO4)、过硫酸铵((NH4)2S2O8)、次氯酸铵(NH4ClO)、钨酸铵((NH4)10H2(W2CO7))、多原子钠盐(例如,过硫酸钠(Na2S2O8)、次氯酸钠(NaClO)、过硼酸钠)、多原子钾盐(例如,碘酸钾(KIO3)、高锰酸钾(KMnO4)、过硫酸钾、硝酸(HNO3)、过硫酸钾(K2S2O8)、次氯酸钾(KClO))、四甲基铵多原子盐(例如,四甲基亚氯酸铵((N(CH3)4)ClO2)、四甲基氯酸铵((N(CH3)4)ClO3)、四甲基碘酸铵((N(CH3)4)IO3)、四甲基过硼酸铵((N(CH3)4)BO3)、四甲基高氯酸铵((N(CH3)4)ClO4)、四甲基高碘酸铵((N(CH3)4)IO4)、四甲基过硫酸铵((N(CH3)4)S2O8))、四丁基铵多原子盐(例如,四丁基过氧单硫酸铵)、过氧单硫酸、硝酸铁(Fe(NO3)3)、过氧化氢尿素((CO(NH2)2)H2O2)、过氧乙酸(CH3(CO)OOH)、1,4-苯醌、甲苯醌、二甲基-1,4-苯醌、氯醌、四氧嘧啶、N-甲基吗啉N-氧化物、三甲胺N-氧化物及其组合。当存在时,氧化剂的量优选地介于从约0.001wt%到1wt%、优选地约0.001wt%到约0.1wt%的范围内。
在特别优选的实施例中,第一清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:氟化铵、硼酸、十二烷基膦酸及水。在另一特别优选的实施例中,含水组合物包括以下各项、由以下各项组成或基本上由以下各项组成:TMAH、氟氢化铵、硼酸、十二烷基膦酸及水。在又一特别优选的实施例中,含水组合物包括以下各项、由以下各项组成或基本上由以下各项组成:氟化铵、硼酸、十二烷基膦酸、聚山梨酸酯及水。在又一特别优选的实施例中,含水组合物包括以下各项、由以下各项组成或基本上由以下各项组成:氟化铵、氟氢化铵、硼酸、十二烷基膦酸、聚山梨酸酯及水。第一清洁组合物的pH范围为4到14,优选地为约6到约10,甚至更优选地为约6到约10或约8到约13。
在另一实施例中,本文中所描述的第一清洁组合物进一步包含等离子蚀刻后残余物,其中等离子蚀刻后残余物包括选自由以下各项组成的群组的残余物材料:含钛残余物、聚合物残余物、含铜残余物、含钨残余物、含钴残余物及其组合。残余物材料可溶解及/或悬浮于第一清洁组合物中。
在一个实施例中,第一清洁组合物可用于选择性地移除侧壁残余物及/或蚀刻后残余物,而基本上不蚀刻图案化或毯覆式钨层、铜层、TiN、含钴层及/或ULK层。优选地,TiN的蚀刻速率小于约优选地小于约W的蚀刻速率小于约 优选地小于约且钴的损耗量在五分钟内小于且Co的蚀刻速率小于钴的损耗量优选地在五分钟内小于损耗量且Co的蚀刻速率小于 钴的损耗量甚至优选地在五分钟内小于损耗量且Co的蚀刻速率小于 类似地,优选地,低k电介质材料的蚀刻速率小于约优选地小于约
有利地,本文中所描述的第一清洁组合物有效地从微电子装置的顶部表面、侧壁以及通孔及线路移除等离子蚀刻后残余物而不危害装置上存在的ILD、帽盖层及/或金属互连层。另外,不管是先蚀刻沟槽还是先蚀刻通孔,均可使用组合物。
将了解,在一般清洁应用,常见做法是以极稀释状态使用高度浓缩状物。举例来说,第一清洁组合物可经制造呈较浓缩状物(出于可溶性目的,其包含至少约20wt%的水),且此后被制造商用额外溶剂(例如,水及/或有机溶剂)稀释、在使用之前用额外溶剂(例如,水及/或有机溶剂)稀释及/或在于工厂中进行使用期间用额外溶剂(例如,水及/或有机溶剂)稀释。稀释率可介于从约0.1份稀释液:1份移除组合物浓缩液到约100份稀释液:1份移除组合物浓缩液的范围内。应理解,在稀释后,移除组合物的许多组分的重量百分率将保持不变。
本文中所描述的第一清洁组合物通过简单地添加相应成分并混合为均质状态而容易地调配。此外,组合物可易于调配为在使用时混合的单组份调配物或多份调配物,优选地多份调配物。多份调配物中的个别份调配物可在工具处混合或在工具上游的储存槽中混合。相应成分的浓度可以组合物的特定倍数大范围地变化,即,较稀释或较浓缩,且将了解,本文中所描述的组合物可多方面地且替代地包括与本文中的揭示内容一致的任何成分组合、由与本文中的揭示内容一致的任何成分组合组成或基本上由与本文中的揭示内容一致的任何成分组合组成。
据此,另一方面涉及在一或多个容器中包含适于形成本文中所描述的第一清洁组合物的一或多种组分的试剂盒。优选地,试剂盒在一或多个容器中包含用于在工厂或在使用时与水进行组合的至少一种腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质与任选地至少一种氧化剂的优选组合。试剂盒的容器必须适于储存及运输所述清洁组合物组分,举例来说,容器(美国康涅狄格州丹伯里市的高级技术材料公司(Advanced Technology Materials,Inc.))。装盛第一清洁组合物的组分的一或多个容器优选地包含用于使所述一或多个容器中的组分流体连通以进行混合及施配的构件。举例来说,参考容器,可在外部对所述一或多个容器的衬里施加气压以致使衬里的内含物的至少一部分被排出且因此实现流体连通以进行混合及施配。替代地,可对常规可加压容器的顶部空间施加气压,或可使用泵来实现流体连通。另外,系统优选地包含用于将经混合清洁组合物施配到加工工具的施配端口。
优选地使用基本上为化学惰性的无杂质柔韧且富有弹性聚合膜材料(例如高密度聚乙烯)来制作所述一或多个容器的衬里。在不需要共挤或阻挡层的情况下且在不具有可不利地影响将要放在衬里中的组分的纯度要求的任何色素、UV抑制剂或加工助剂的情况下加工期望衬里材料。期望衬里材料的清单包含包括纯净(无添加剂)聚乙烯、纯净聚四氟乙烯(PTFE)、聚丙烯、聚氨酯、聚偏二氯乙烯、聚氯乙烯、聚缩醛、聚苯乙烯、聚丙烯腈、聚丁烯等等的膜。此类衬里材料的优选厚度介于从约5密耳(0.005英寸)到约30密耳(0.030英寸)的范围内,举例来说,如20密耳(0.020英寸)的厚度。
关于试剂盒的容器,以下专利及专利申请案的揭示内容特此以全文引用的方式并入本文中:标题为“用于使在超纯液体中产生的粒子最少化的设备及方法(APPARATUS ANDMETHOD FOR MINIMIZING THE GENERATION OF PARTICLES IN ULTRAPURE LIQUIDS)”的第7,188,644号美国专利;标题为“可回收且可重复使用的桶中袋流体储存及施配容器系统(RETURNABLE AND REUSABLE,BAG-IN-DRUM FLUID STORAGE AND DISPENSING CONTAINERSYSTEM)”的第6,698,619号美国专利;及以约翰E.Q.休斯(John E.Q.Hughes)的名义于2007年5月9日提出申请的标题为“用于材料混合及分配的系统及方法(SYSTEMS AND METHODSFOR MATERIAL BLENDING AND DISTRIBUTION)”的第60/916,966号美国专利申请案,及以高级技术材料公司的名义于2008年5月9日提出申请的标题为“用于材料混合及分配的系统及方法(SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION)”的PCT/US08/63276。
当应用于微电子制造操作时,第一清洁组合物通常用于从微电子装置的表面清除等离子蚀刻后残余物,且可在施加经调配以从装置的表面移除替代材料的其它组合物之前或在其之后施加到所述表面。本文中所描述的第一清洁组合物不损坏微电子装置表面上的超低k(ULK)ILD材料、金属互连件材料、硬掩模帽盖层及钴帽盖层且优选地移除在进行移除处理之前存在于装置上的残余物的至少90%、更优选地至少95%,且最优选,移除想要移除的残余物的至少99%。
在等离子蚀刻后残余物移除应用中,第一清洁组合物可以任何适合方式施加到想要清洁的装置,例如,通过将组合物喷涂在想要清洁的装置的表面上、通过以组合物的静态或动态体积浸渍想要清洁的装置、通过使想要清洁的装置与其上吸附有组合物的另一材料(例如,垫子或纤维状吸附剂施加器元件)接触或通过使组合物与想要清洁的装置处于移除接触状态的任何其它适合手段、方式或技术。此外,本文中涵盖批量或单一晶片处理。
在第三方面中,第一清洁组合物用于从上面具有等离子蚀刻后残余物的微电子装置移除所述等离子蚀刻后残余物,第一清洁组合物通常在介于从约20℃到约90℃、优选地约40℃到约70℃且最优选地约50℃到约60℃的范围内的温度下与所述装置静态地或动态地接触达从约1分钟到约30分钟、优选地约1分钟到10分钟的时间。优选地,接触是静态的。此些接触时间及温度是说明性的,且可采用对于从装置至少部分地移除蚀刻后残余物材料有效的任何其它适合时间及温度条件。从微电子装置“至少部分地移除”残余物材料对应于移除材料的至少90%、优选地移除至少95%。最优选地,使用本文中所描述的第一清洁组合物移除所述残余物材料的至少99%。
在实现所要移除动作之后,(例如)通过冲洗、洗涤或其它移除步骤可易于将第一清洁组合物从其先前所施加到的装置移除,此在本文中所描述的组合物的给定最终用途应用中是期望的且有效的。举例来说,装置可用包含去离子水的冲洗溶液进行冲洗及/或被干燥(例如,旋转干燥、N2、蒸汽干燥等)。
必要时,可需要进行清洁后烘干步骤及/或异丙醇蒸汽干燥步骤以移除可吸附到ILD材料的孔隙中的非挥发性材料,以便不改变低k电介质材料的电容。
在第四方面中,揭示一种从上面具有材料的微电子装置移除所述材料的方法,所述方法包括使微电子装置与第二清洁组合物接触达足以从微电子装置至少部分地移除所述材料的时间,其中第二清洁组合物包含至少一种蚀刻剂、至少一种金属抑制剂、至少一种有机溶剂、水及任选地至少一种钝化剂。第二清洁组合物通常用于从微电子装置的表面清除等离子蚀刻后残余物,且可在施加经调配以从装置的表面移除替代材料的其它组合物之前或在其之后施加到所述表面。本文中所描述的第二清洁组合物不损坏微电子装置表面上的超低k(ULK)ILD材料、金属互连件材料、硬掩模帽盖层及钴帽盖层且优选地移除在进行移除处理之前存在于装置上的残余物的至少90%、更优选地至少95%,且最优选,移除想要移除的残余物的至少99%。
在等离子蚀刻后残余物移除应用中,第二清洁组合物可以任何适合方式施加到想要清洁的装置,例如,通过将组合物喷涂在想要清洁的装置的表面上、通过以组合物的静态或动态体积浸渍想要清洁的装置、通过使想要清洁的装置与其上吸附有组合物的另一材料(例如,垫子或纤维状吸附剂施加器元件)接触或通过使组合物与想要清洁的装置处于移除接触状态的任何其它适合手段、方式或技术。此外,本文中涵盖批量或单一晶片处理。
第二清洁组合物通常在介于从约20℃到约90℃、优选地约40℃到约70℃且最优选地约50℃到约60℃的范围内的温度下与所述装置静态地或动态地接触达从约1分钟到约30分钟、优选地约1分钟到10分钟的时间。优选地,接触是静态的。此些接触时间及温度是说明性的,且可采用对于从装置至少部分地移除蚀刻后残余物材料有效的任何其它适合时间及温度条件。从微电子装置“至少部分地移除”残余物材料对应于移除材料的至少90%、优选地移除至少95%。最优选地,使用本文中所描述的第二清洁组合物移除所述残余物材料的至少99%。
在实现所要移除动作之后,(例如)通过冲洗、洗涤或其它移除步骤可易于将第二清洁组合物从其先前所施加到的装置移除,此在本文中所描述的组合物的给定最终用途应用中是期望的且有效的。举例来说,装置可用包含去离子水的冲洗溶液进行冲洗及/或被干燥(例如,旋转干燥、N2、蒸汽干燥等)。
第二清洁组合物包括以下各项、由以下各项组成或基本上由以下各项组成:至少一种蚀刻剂、至少一种金属抑制剂、至少一种有机溶剂、水及任选地至少一种钝化剂,其等基于组合物的总重量以以下量存在:
第二清洁组合物的组分与上文中针对第一清洁组合物所描述的组分相同。优选地,至少一种蚀刻剂包括氟氢化铵、TBA-BF4或其组合。优选地,至少一种金属抑制剂包括ATDT、TAZ、苯扎氯铵、巯基苯并噻唑、5-ATA或其组合,最优选地ATDT与TAZ或5-ATA的组合。优选地,至少一种有机溶剂包括具有TEGDE或DPGME的TPGME。
在优选实施例中,第二清洁组合物基本上没有研磨或其它无机颗粒材料、胺、氯化物(Cl-)、金属卤化物、硅酸盐及其组合。第二方面的第二清洁组合物的pH优选地介于从约3到约8、优选地约6到约8的范围内。
另一方面涉及根据本文中所描述的方法制作的经改进微电子装置且涉及含有此类微电子装置的产品。
又一方面涉及制造包括微电子装置的物品的方法,所述方法包括:使微电子装置与组合物接触达足以从上面具有等离子蚀刻后残余物的微电子装置清除所述残余物的时间,且将所述微电子装置并入到所述物品中,其中所述组合物可是本文中所描述的第一或第二清洁组合物。
又一方面涉及制造包括微电子装置的物品的方法,所述方法包括:使微电子装置与组合物接触达足以从上面具有等离子蚀刻后残余物的微电子装置清除所述残余物的时间,且将所述微电子装置并入到所述物品中,其中所述组合物可是本文中所描述的第一或第二清洁组合物。
在又一方面中,本文中所描述的第一或第二清洁组合物可用于微电子装置制造工艺的其它方面(即,在等离子蚀刻后残余物清除步骤之后的方面)中。举例来说,所述组合物可用于移除灰化后残余物,及/或所述组合物可被稀释并用于化学机械抛光(CMP)后的清洁。
在又一方面中,描述一种制造物品,所述物品包括微电子装置衬底、残余物材料及清洁组合物,其中清洁组合物可是本文中所描述的的第一或第二清洁组合物,且其中残余物材料选自由以下各项组成的群组:含钛残余物、聚合物残余物、含铜残余物、含钨残余物、含钴残余物及其组合。
尽管本文中参考说明性实施例及特征已多方面地揭示本发明,但将了解,上文中所描述的实施例及特征并非用于限制本发明,且所属领域的技术人员基于本文中的揭示内容将联想到其它变化、修改及其它实施例。因此,本发明应广泛地解释为囊括在所附权利要求书的精神及范围内的所有此些变化、修改及替代实施例。
Claims (21)
1.一种含水清洁组合物,其包括至少一种非离子表面活性剂腐蚀抑制剂、至少一种蚀刻剂源、至少一种钝化剂、水、任选地至少一种有机溶剂、任选地至少一种缓冲物质、任选地至少一种额外腐蚀抑制剂及任选地至少一种氧化剂,其中所述含水清洁组合物适于从上面具有等离子蚀刻后残余物的微电子装置清除所述残余物。
2.根据权利要求1所述的清洁组合物,其中所述等离子蚀刻后残余物包括选自由以下各项组成的群组的残余物:含钛化合物、聚合化合物、含铜化合物、含钨化合物、含钴化合物及其组合。
3.根据权利要求1或2中任一权利要求所述的清洁组合物,其中所述至少一种蚀刻剂包括选自由以下各项组成的群组的氟化物物质:氢氟酸、氟硼酸、四甲基六氟磷酸铵、氟化铵、氟氢化铵、四丁基四氟硼酸铵、四甲基四氟硼酸铵、四乙基四氟硼酸铵、四丙基四氟硼酸铵、四丁基四氟硼酸铵及其组合。
4.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述至少一种蚀刻剂包括选自由以下各项组成的群组的氟化物:氟氢化铵、氟化铵及其组合。
5.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述至少一种钝化剂包括选自由以下各项组成的群组的物质:硼酸、3-羟基-2-萘甲酸、丙二酸、亚氨基二乙酸、五硼酸铵、尿素、甲基三乙氧基硅烷及其混合物。
6.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述至少一种钝化剂包括硼酸。
7.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述至少一种非离子表面活性剂腐蚀抑制剂包括选自由以下各项组成的群组的物质:聚(乙二醇)、聚(丙二醇)、环氧乙烷/环氧丙烷嵌段共聚物、聚山梨酸酯、聚氧丙烯/聚氧乙烯嵌段共聚物及其组合。
8.根据权利要求7所述的清洁组合物,其中所述至少一种非离子表面活性剂腐蚀抑制剂包括聚山梨酸酯。
9.根据权利要求8所述的清洁组合物,其中所述至少一种非离子表面活性剂腐蚀抑制剂包括聚氧乙烯(20)山梨糖醇酐单油酸酯(吐温80)、聚氧乙烯(20)山梨糖醇酐单硬脂酸酯(吐温60)、聚氧乙烯(20)山梨糖醇酐单棕榈酸酯(吐温40)、聚氧乙烯(20)山梨糖醇酐单月桂酸酯(吐温20)。
10.根据前述权利要求中任一权利要求所述的清洁组合物,其包括选自由以下各项组成的群组的至少一种额外腐蚀抑制剂:5-氨基四唑、5-苯基-苯并三唑、1H-四唑-5-乙酸、1-苯基-2-四氮唑-5-硫酮、苯并咪唑、甲基四唑、铋试剂I、胞嘧啶、鸟嘌呤、胸腺嘧啶、吡唑、亚氨基二乙酸IDA、丙硫醇、苯甲羟肟酸、柠檬酸、抗坏血酸、5-氨基-1,3,4-噻二唑-2-硫醇ATDT、苯并三唑BTA、1,2,4-三唑TAZ、甲苯基三唑、5-甲基-苯并三唑mBTA、5-苯基-苯并三唑、5-硝基-苯并三唑、苯并三唑羧酸、3-氨基-5-巯基-1,2,4-三唑、1-氨基-1,2,4-三唑、羟基苯并三唑、2-(5-氨基-戊基)-苯并三唑、1-氨基-1,2,3-三唑、1-氨基-5-甲基-1,2,3-三唑、3-氨基-1,2,4-三唑3-ATA、3-巯基-1,2,4-三唑、3-异丙基-1,2,4-三唑、5-苯基硫醇-苯并三唑、卤代-苯并三唑(卤基=F、Cl、Br或I)、萘并三唑、2-巯基苯并咪唑MBI、2-巯基苯并噻唑、4-甲基-2-苯基咪唑、2-巯基噻唑啉、5-氨基-1,2,4-三唑5-ATA、十二烷基硫酸钠SDS、ATA-SDS、3-氨基-5-巯基-1,2,4-三唑、戊四唑、5-苯基-1H-四唑、5-苄基-1H-四唑、Ablumine O、2-苄基吡啶、琥珀酰亚胺、2,4-二氨基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑烷酮、1,5-五亚甲基四唑、1-苯基-5-巯基四唑、二氨基甲基三嗪、咪唑啉硫酮、4-甲基-4H-1,2,4-三唑-3-硫醇、4-氨基-4H-1,2,4-三唑、3-氨基-5-甲硫基-1H-1,2,4-三唑、苯并噻唑、咪唑、苯并异二唑(indiazole)、腺嘌呤、琥珀酰亚胺、腺苷、咔唑、糖精、尿酸及苯偶姻肟、苯扎氯铵、十二烷基二甲基苄基氯化铵、十四烷基三甲基溴化铵、十二烷基三甲基溴化铵、十六烷基吡啶氯化物、Aliquat 336、苄基二甲基苯基氯化铵、Crodaquat TES、Rewoquat CPEM、十六烷基三甲基对甲苯磺酸铵、十六烷基三甲基氢氧化铵、1-甲基-1'-十四烷基-4,4'-联吡啶二氯化物、烷基三甲基溴化铵、盐酸氨丙林、氢氧化苄乙铵、苄索氯铵、十六烷基二甲基苄基氯化铵、十四烷基二甲基苄基氯化铵、十二烷基二甲基苄基溴化铵、十二烷基二甲基苄基氯化铵、十六烷基吡啶氯化物、胆碱对甲苯磺酸盐、二甲基双十八烷基溴化铵、十二烷基二甲基乙基溴化铵、十二烷基三甲基氯化铵、十六烷基二甲基乙基溴化铵、吉拉尔特试剂、十六烷基(2-羟乙基)二甲基磷酸二氢铵、十六烷基吡啶溴化物、十六烷基三甲基溴化铵、十六烷基三甲基氯化铵、甲基苄索氯铵、N,N',N'-聚氧乙烯(10)-N-牛脂基-1,3-二氨基丙烷液体、奥芬溴铵、四庚基溴化铵、四(癸基)溴化铵、通佐溴铵、三(十二烷基)氯化铵、十八烷基三甲基溴化铵、1-甲基-3-正辛基咪唑四氟硼酸盐、1-癸基-3-甲基咪唑四氟硼酸盐、1-癸基-3-甲基咪唑氯化物、三(十二烷基)甲基溴化铵、二甲基二硬脂基氯化铵、十六烷基三甲基溴化铵、十四烷基三甲基溴化铵、六甲基氯化铵、十二烷基苯磺酸、十二烷基苯磺酸钠、十二烷基膦酸DDPA及其组合。
11.根据前述权利要求中任一权利要求所述的清洁组合物,其中基于所述组合物的总重量,水的量介于从约50wt%到约99.5wt%的范围内。
12.根据前述权利要求中任一权利要求所述的清洁组合物,其中pH介于从约6到约10的范围内。
13.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述pH介于从约8到约13的范围内。
14.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述组合物基本上没有研磨材料以及碱金属及碱土金属氢氧化物盐。
15.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述组合物进一步包括至少一种缓冲剂。
16.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述组合物进一步包括至少一种有机溶剂。
17.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述组合物进一步包括至少一种氧化剂。
18.根据前述权利要求中任一权利要求所述的清洁组合物,其中所述组合物进一步包括选自由以下各项组成的群组的等离子蚀刻后残余物:含钛残余物、聚合物残余物、含铜残余物、含钨残余物、含钴残余物及其组合。
19.一种从上面具有材料的微电子装置移除所述材料的方法,所述方法包括:使所述微电子装置与根据权利要求1到18中任一权利要求所述的含水清洁组合物接触达足以从所述微电子装置至少部分地移除所述材料的时间。
20.根据权利要求19所述的方法,其中所述材料包括等离子蚀刻后残余物,所述等离子蚀刻后残余物包括选自由以下各项组成的群组的残余物:含钛化合物、聚合化合物、含铜化合物、含钨化合物、含钴化合物及其组合。
21.根据权利要求19到20中任一权利要求所述的方法,其中所述接触包括选自由以下各项组成的群组的条件:从约1分钟到约30分钟的时间;介于从约40℃到约70℃的范围内的温度;及其组合。
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WO2016003729A1 (en) | 2016-01-07 |
US20170200601A1 (en) | 2017-07-13 |
TW201619363A (zh) | 2016-06-01 |
CN107155367B (zh) | 2021-12-21 |
US11978622B2 (en) | 2024-05-07 |
TWI713458B (zh) | 2020-12-21 |
KR20170027787A (ko) | 2017-03-10 |
KR102405063B1 (ko) | 2022-06-07 |
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