CN107123595A - 晶片的加工方法 - Google Patents
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Abstract
本发明提供晶片的加工方法,即使在晶片的正面侧存在遮挡激光光线的遮蔽物,也不会牺牲后面工序中的加工效率,高效且可靠地形成盾构隧道。一种晶片的加工方法,该晶片的加工方法包含如下的工序:框架支承工序,将该晶片定位在具有对晶片进行收纳的开口部的框架的该开口部,利用粘合带将该晶片的背面和该框架粘贴为一体,利用该框架对该晶片进行支承;以及盾构隧道形成工序,利用卡盘工作台对该晶片的正面侧进行保持,并穿过该粘合带对与分割预定线对应的晶片的背面照射对于该晶片和该粘合带具有透过性的波长的激光光线,沿着该分割预定线形成由细孔和围绕该细孔的非晶质构成的盾构隧道。
Description
技术领域
本发明涉及晶片的加工方法,对在正面上沿着交叉的多条分割预定线划分而形成有多个器件的晶片照射激光光线而分割成各个器件芯片。
背景技术
通过激光加工装置将被分割预定线划分而在正面上形成有IC、LSI、LED等多个器件的晶片分割成各个器件芯片,并应用于移动电话、个人计算机、照明设备等电子设备中(例如,参照专利文献1。)。
激光加工装置大致包含如下部件:卡盘工作台,其对被加工物进行保持;激光光线照射构件,其具有对保持在该卡盘工作台上的被加工物照射激光光线的聚光器;以及加工进给构件,其使该卡盘工作台与该激光光线照射构件相对地进行加工进给,该激光加工装置能够沿着晶片的分割预定线高精度地照射激光光线而实施分割加工。
并且,激光加工装置被分为如下两种类型:如在上述专利文献1中例示的那样照射对于被加工物具有吸收性的波长的激光光线而实施烧蚀加工的类型和将对于被加工物具有透过性的波长的激光光线的聚光点定位在被加工物的内部而进行照射从而形成改质层的类型(例如,参照专利文献2。)。然而,在任意类型中,为了将晶片完全切断,都需要沿着分割预定线多次照射激光光线,存在生产性较差的问题。
因此,本申请人开发并提出了沿着分割预定线形成由从正面到背面的细孔和围绕该细孔的非晶质构成的所谓的盾构隧道而使生产效率提高的技术(参照专利文献3。)。
专利文献1:日本特开平10-305420号公报
专利文献2:日本特许第3408805号公报
专利文献3:日本特开2014-221483号公报
根据上述专利文献3所记载的技术,能够沿着晶片的分割预定线形成从正面贯通到背面的盾构隧道,不需要进行多次的激光光线的照射,能够高效地将晶片分割成各个器件。这里,有时在形成于晶片的基板正面侧的器件上与分割预定线相邻地形成有突起状的凸点(电极)。在存在这样的凸点的情况下,当从该晶片的正面侧将形成盾构隧道的激光光线的聚光点位置定位在较深的位置时,产生了如下问题:根据激光光线照射构件的聚光透镜的数值孔径,该凸点成为遮蔽物而遮挡了激光光线的外周的一部分,从而不能形成希望的盾构隧道。这样的问题不仅会因形成于器件的凸点而产生,在形成有在分割预定线上形成的测试元件组(TEG)的情况下也同样产生该问题。
这里,在避开形成于该晶片的正面侧的凸点、TEG等而照射激光光线从而形成盾构隧道的情况下,如在上述的专利文献3中所记载的技术那样,可以考虑将形成有器件的晶片的正面侧粘贴在与环状的框架成为一体的带侧而从该晶片的背面侧照射激光光线。在该情况下,将晶片的形成有器件的正面侧粘贴在粘合带的正面并设置成使该晶片的背面侧朝向上方,其中,该粘合带的外周部安装成覆盖用于将晶片保持在激光加工装置中的环状的框架的内侧开口部。然而,在以这样的方式设置了晶片的情况下,由于在该激光加工时将形成有器件的正面侧粘贴保持在该带侧,所以在之后继续执行的芯片接合工序或线接合工序时,需要使形成有器件的一侧、即晶片的正面侧朝向上方,需要在分割成各个器件芯片之后将所拾取的器件芯片一个个翻转的工序,在提高生产性方面留有课题。
发明内容
因此,本发明的目的在于提供晶片的加工方法,在对在正面上沿着分割预定线划分而形成有多个器件的晶片照射激光光线而分割成各个器件的晶片的加工方法中,即使存在形成于晶片的正面侧的凸点、TEG等遮挡激光光线的遮蔽物,也不会牺牲后面工序中的加工效率,高效而可靠地形成盾构隧道。
为了解决上述主要的技术课题,根据本发明,提供晶片的加工方法,将在正面上由交叉的多条分割预定线划分而形成有多个器件的晶片分割成各个器件芯片,其中,该晶片的加工方法具有如下的工序:框架支承工序,将该晶片定位在具有对晶片进行收纳的开口部的环状框架的该开口部,利用粘合带将该晶片的背面和该环状框架粘贴为一体,利用该环状框架经由该粘合带对该晶片进行支承;以及盾构隧道形成工序,在实施了该框架支承工序之后,利用卡盘工作台对该晶片的正面侧进行吸引保持,并穿过该粘合带对与分割预定线对应的晶片的背面照射对于该晶片和该粘合带具有透过性的波长的激光光线,沿着该分割预定线形成由细孔和围绕该细孔的非晶质构成的盾构隧道。
优选在该盾构隧道形成工序之后,实施如下的器件分离工序:对该粘合带进行扩展而将晶片分离成各个器件芯片。优选在利用卡盘工作台对该晶片进行保持之前,将保护部件配设在该晶片的正面侧,在该器件分离工序中,在对该粘合带进行扩展之前将该保护部件剥离。
根据本发明,即使在形成于晶片的正面侧的器件上与分割预定线相邻地设置有突起状的凸点(电极),或是在分割预定线上形成有TEG等遮蔽物,也不会受到任何影响,能够沿着分割预定线高效地形成盾构隧道。
并且,根据本发明,在将该晶片分割成各个器件芯片之后,能够从形成有器件的晶片的正面侧对各个器件芯片进行拾取,不需要在执行之后的工序时还对各个器件芯片进行翻转等工序,因此能够起到不牺牲生产效率而对晶片进行加工的作用效果。
附图说明
图1是激光加工装置的整体立体图。
图2的(a)和(b)是用于对保护带粘贴工序、对准工序进行说明的说明图。
图3的(a)、(b)和(c)是用于对盾构隧道形成工序进行说明的说明图。
图4的(a)、(b)和(c)是用于对保护带剥离工序、分离工序、拾取工序进行说明的说明图。
标号说明
1:激光加工装置;2:静止基台;3:卡盘工作台机构;4:激光光线照射单元;5:激光光线照射构件;6:拍摄构件;10:晶片;11:器件;12:盾构隧道;15:保护带;36:卡盘工作台;T:粘合带;F:框架;LB:激光光线。
具体实施方式
以下,参照附图对本发明的晶片的加工方法的优选的实施方式进行详细地说明。
在图1中示出了用于实施本发明的晶片的加工方法的激光加工装置1的立体图,该激光加工装置1具有:静止基台2;卡盘工作台机构3,其以能够在箭头X所示的X轴方向上移动的方式配设在该静止基台2上并对被加工物进行保持;以及激光光线照射单元4,其配设在静止基台2上。卡盘工作台机构3具有:一对导轨31、31,它们沿着X轴方向平行配设在静止基台2上;第1滑动块32,其以能够在X轴方向上移动的方式配设在该导轨31、31上;第2滑动块33,其以能够在与X轴方向垂直的箭头Y所示的Y轴方向上移动的方式配设在该第1滑动块32上;罩工作台35,其在该第2滑动块33上被圆筒部件34支承;以及作为保持构件的卡盘工作台36,其对被加工物进行保持。该卡盘工作台36具有吸附卡盘361,该吸附卡盘361由具有通气性的多孔性材料形成,通过使未图示的吸引构件在吸附卡盘361的上表面即保持面上工作而对被加工物进行保持。这样构成的卡盘工作台36通过配设在圆筒部件34内的未图示的脉冲电动机而旋转。另外,在卡盘工作台36上配设有用于对环状的框架进行固定的夹具362,该环状的框架对被加工物进行支承。
在上述第1滑动块32的下表面设置有与上述一对导轨31、31嵌合的一对被导槽321、321,并且在其上表面设置有沿着Y轴方向平行形成的一对导轨322、322。这样构成的第1滑动块32构成为能够通过使被导槽321、321与一对导轨31、31嵌合而沿着一对导轨31、31在X轴方向上移动。图示的卡盘工作台机构3具有X轴方向移动构件37,该X轴方向移动构件37用于使第1滑动块32沿着一对导轨31、31在X轴方向上移动。X轴方向移动构件37与平行配设在上述一对导轨31与31之间的外螺杆371和用于使该外螺杆371旋转驱动的脉冲电动机372的输出轴传动连结。另外,外螺杆371与贯通内螺纹孔螺合,该贯通内螺纹孔形成在未图示的外螺纹块中,该外螺纹块突出设置在第1滑动块32的中央部下表面上。因此,通过脉冲电动机372对外螺杆371进行正转和反转驱动,由此,使第1滑动块32沿着导轨31、31在X轴方向上移动。
激光加工装置1具有用于对上述卡盘工作台36的X轴方向位置进行检测的未图示的X轴方向位置检测构件。该X轴方向位置检测构件包含:未图示的直线标尺,其沿着导轨31配设;以及未图示的读取头,其配设在第1滑动块32上并与第1滑动块32一起沿着该直线标尺移动。该X轴方向位置检测构件的读取头例如每1μm将1个脉冲的脉冲信号发送给后述的控制构件。然后,后述的控制构件对所输入的脉冲信号进行计数,由此,对卡盘工作台36的X轴方向位置进行检测。另外,在使用了脉冲电动机372来作为上述X轴方向移动构件37的驱动源的情况下,也能够对将驱动信号输出给脉冲电动机372的后述的控制构件的驱动脉冲进行计数,由此,对卡盘工作台36的X轴方向的位置进行检测。并且,在使用了伺服电动机来作为上述X轴方向移动构件37的驱动源的情况下,也能够将对伺服电动机的转速进行检测的旋转编码器所输出的脉冲信号发送给后述的控制构件,并对控制构件所输入的脉冲信号进行计数,由此,对卡盘工作台36的X轴方向位置进行检测,在本发明中对该X轴方向位置进行检测的构件的形式并没有特别限定。
在上述第2滑动块33的下表面设置有一对被导槽331、331,该一对被导槽331、331与设置于上述第1滑动块32的上表面的一对导轨322、322嵌合,上述第2滑动块33通过使该被导槽331、331与一对导轨322、322嵌合而构成为能够在Y轴方向上移动。图示的卡盘工作台机构3具有Y轴方向移动构件38,该Y轴方向移动构件38用于使第2滑动块33沿着设置于第1滑动块32的一对导轨322、322在Y轴方向上移动。Y轴方向移动构件38包含平行配设在上述一对导轨322、322之间的外螺杆381和用于使该外螺杆381旋转驱动的脉冲电动机382等驱动源。该外螺杆381的一端被上述第1滑动块32的上表面上所固定的轴承块383支承为自由旋转,其另一端与上述脉冲电动机382的输出轴传动连结。另外,外螺杆381与贯通内螺纹孔螺合,该贯通内螺纹孔形成在未图示的外螺纹块中,该外螺纹块突出设置在第2滑动块33的中央部下表面上。因此,通过脉冲电动机382对外螺杆381进行正转和反转驱动,由此,使第2滑动块33沿着导轨322、322在Y轴方向上移动。
激光加工装置1具有用于对上述第2滑动块33的Y轴方向位置进行检测的未图示的Y轴方向位置检测构件。该Y轴方向位置检测构件与上述的X轴方向位置检测构件同样,包含:未图示的直线标尺,其沿着导轨322配设;以及未图示的读取头,其配设在第2滑动块33上并与第2滑动块33一起沿着该直线标尺移动。该Y轴方向位置检测构件的该读取头例如每1μm将1个脉冲的脉冲信号发送给后述的控制构件。然后,后述的控制构件对所输入的脉冲信号进行计数,由此,对第2滑动块33的Y轴方向位置进行检测。另外,在使用脉冲电动机382来作为上述Y轴方向移动构件38的驱动源的情况下,也能够对将驱动信号输出给脉冲电动机382的后述的控制构件的驱动脉冲进行计数,由此,对第2滑动块33的Y轴方向的位置进行检测。并且,在使用伺服电动机来作为上述Y轴方向移动构件38的驱动源的情况下,也能够将对伺服电动机的转速进行检测的旋转编码器所输出的脉冲信号发送给后述的控制构件,并对控制构件所输入的脉冲信号进行计数,由此,对第2滑动块33的Y轴方向位置进行检测。
上述激光光线照射单元4具有:支承部件41,其配置在上述静止基台2上;外壳42,其被该支承部件41支承且实际上水平延伸;激光光线照射构件5,其配设在该外壳42上;以及拍摄构件6,其配设在外壳42的前端部并对要进行激光加工的加工区域进行检测。该拍摄构件6除了包含通过可见光线来进行拍摄的普通的拍摄元件(CCD)之外,还包含:红外线照明构件,其对被加工物照射红外线;光学系统,其捕捉该红外线照明构件所照射的红外线;以及拍摄元件(红外线CCD)等,其输出与由该光学系统捕捉到的红外线对应的电信号,该拍摄构件6将拍摄得到的图像信号发送给后述的控制构件。
上述激光光线照射构件5构成为包含将激光光线会聚在卡盘工作台36所保持的半导体晶片上而进行照射的聚光器51,并具有:未图示的脉冲激光振荡器,其以希望的重复频率照射激光光线;输出调整构件(衰减器),其对从该脉冲激光振荡器振荡出的脉冲激光光线的输出进行调整;以及方向转换镜等,其用于使所照射的脉冲激光光线的光路朝向该聚光器51进行方向转换。
激光加工装置1具有未图示的控制构件。控制构件由计算机构成,并具有:中央运算处理器(CPU),其根据控制程序来进行运算处理;只读存储器(ROM),其对该控制程序等进行储存;能够读写的随机存取存储器(RAM),其对运算结果等进行储存;以及输入接口和输出接口。
以下,作为使用图1所示的激光加工装置1来执行的晶片的加工方法的实施方式的一例,对将由分割预定线划分而在正面上形成有多个SAW器件的例如由钽酸锂(LiTaO3)基板构成的晶片10分割成各个器件的晶片的加工方法进行说明。
首先,如图2的(a)所示,将晶片10的背面侧10b粘贴在粘合带T的正面侧,该粘合带T的外周部以覆盖环状的框架F的内侧开口部的方式安装在框架F的背面Fb侧。因此,粘贴在粘合带T的正面的晶片10以其正面10a侧为上侧的方式粘贴在框架F的正面Fa侧(框架支承工序)。另外,作为该粘合带T的材质,例如,可以选择软质PVC(聚氯乙烯)膜或PO(聚烯烃)膜,只要是具有使后述的激光光线透过的性质的材质,则并没有限定。
在实施了上述的框架支承工序之后,以将晶片10的正面10a侧覆盖的方式粘贴作为保护部件的保护带15(保护带粘贴工序)。另外,该保护带15的粘贴不一定需要在该框架支承工序之后进行,也可以在该晶片10、粘合带T和框架F成为一体之前,预先对晶片10的正面侧10a进行粘贴,只要在将该晶片10保持在该激光加工装置的卡盘工作台上之前进行粘贴即可。另外,作为该保护带15的材质,也可以选择与上述粘合带同样的PVC、PO,但也可以采用不使激光光线透过的材质。
在实施了该保护带粘贴工序之后,如图2的(b)所示将框架F翻转而将该晶片10的粘贴有保护带15的正面10a侧载置在卡盘工作台36上以使背面Fb侧成为上侧,使未图示的吸引构件工作而其吸引保持在吸附卡盘361上。在该晶片10被吸引保持在卡盘工作台36上之后,借助框架F并通过夹具362来进行固定。通过以这样的方式进行固定,在卡盘工作台机构3上从上方起按照粘合带T、晶片10、保护带15的顺序进行定位(参照图2的(b)、图3的(b))。
如图2的(b)所示,按照上述那样吸引保持着晶片10的卡盘工作台36被加工进给机构定位在拍摄构件6的正下方。当卡盘工作台36被定位在拍摄构件6的正下方时,在该状态下,为了使形成于保持在卡盘工作台36上的晶片10的格子状的分割预定线在X轴方向和Y轴方向上配设在规定的位置,通过拍摄构件6对保持在卡盘工作台36上的晶片10进行拍摄,并执行图案匹配等图像处理而进行对准作业(对准工序)。此时,晶片10的形成有分割预定线的基板的正面侧10a位于下侧,但由于拍摄构件6如上述那样由红外线照明构件、捕捉红外线的光学系统和输出与红外线对应的电信号的拍摄元件(红外线CCD)等构成,所以能够从晶片10的背面10b侧透过而对分割预定线进行拍摄。
通过实施上述的对准工序,保持在卡盘工作台36上的晶片10被定位在卡盘工作台36上的规定的坐标位置,该坐标位置信息存储在激光加工装置1的上述控制构件的随机存取存储器(RAM)中。
在实施了上述的对准工序之后,使卡盘工作台36移动至照射激光光线的激光光线照射构件5的聚光器51所位于的激光光线照射区域,并将规定的分割预定线的一端部定位成位于聚光器51的正下方。并且,为了使通过聚光器51的聚光透镜会聚的脉冲激光光线的聚光点P位于晶片10的厚度方向上的希望的位置,使未图示的聚光点位置调整构件工作而使聚光器51在光轴方向上移动。另外,如图3的(b)所示,本实施方式中的脉冲激光光线的聚光点P在晶片10中被设定在与相对于脉冲激光光线所入射的背面10b侧为相反侧的正面10a侧相邻的规定的位置。
在如上述那样将晶片10定位在聚光点位置之后,如图3的(a)、(b)所示,实施盾构隧道形成工序,使激光光线照射构件5工作而使脉冲激光光线LB从聚光器51穿过粘合带T来进行照射,在位于晶片10内的聚光点P与脉冲激光光线所入射的一侧(背面10b侧)之间形成细孔121和对该细孔进行盾构的非晶质122,从而形成盾构隧道。即,一边从聚光器51照射对于粘合带T和构成晶片10的基板具有透过性的波长的脉冲激光光线,一边使卡盘工作台36在图3中箭头X所示的方向上以规定的进给速度移动。并且,在分割预定线的另一端到达激光光线照射构件5的聚光器51的照射位置之后,停止脉冲激光光线的照射并且停止卡盘工作台36的移动。
另外,上述激光加工的加工条件例如按照以下方式进行设定。
波长:1030nm
平均输出:3W
重复频率:50kHz
脉冲宽度:10ps
光斑直径:φ10μm
折射率/数值孔径(*):0.05~0.2
加工进给速度:500mm/秒
(*)钽酸锂的折射率/构成聚光器的透镜的数值孔径
通过实施上述的盾构隧道形成工序,在晶片10的内部,如图3的(b)、(c)所示在从脉冲激光光线的聚光点P所在的正面10a(下表面)侧到作为照射面的背面10b(上表面)的范围内成长出细孔121和形成在该细孔121的周围的非晶质122,沿着分割预定线以规定的间隔(在本实施方式中为10μm的间隔)形成非晶质的盾构隧道12。该盾构隧道12如图3的(c)所示由形成于中心的直径为φ1μm左右的细孔121和形成于该细孔121的周围的直径为φ10μm的非晶质122构成,在本实施方式中互相相邻的非晶质122形成为彼此相连。另外,由于在上述的盾构隧道形成工序中形成的非晶质的盾构隧道12能够在从晶片10的正面10a(下表面)侧到作为照射面的背面10b(上表面)的范围内形成,所以即使晶片的厚度较厚也只需照射一次脉冲激光光线,因此生产性非常良好。并且,由于在盾构隧道形成工序中碎屑不会飞散,所以也解决了器件的品质降低的问题。
在实施了上述的盾构隧道形成工序之后,解除对载置在卡盘工作台36上的晶片10进行固定的夹具362,并将借助粘合带T保持在框架F上的晶片10从卡盘工作台机构3取下,如图4的(a)所示,将框架F翻转而使保持着晶片10的一侧成为上方。此时,在激光加工时,将此前朝向下侧的框架F的正面Fa侧保持成朝向上侧。之后,将粘贴在晶片10的正面10a侧的保护带15剥离(保护带剥离工序)并搬送到实施下一个分离工序的分离构件上。
对将实施了上述的盾构隧道形成工序的晶片10分离成各个器件的分离工序进行说明。如图4的(b)所示,将安装有粘贴着晶片10的粘合带T的环状的框架F载置在构成框架保持构件61的框架保持部件611的载置面611a上,并通过夹具612固定在框架保持部件611上(框架保持工序)。此时,框架保持部件611被定位在图4的(b)所示的基准位置。接着,使构成带扩展构件的作为支承构件623的多个气缸623a工作而使环状的框架保持部件611下降至图4的(c)所示的扩展位置。因此,固定在框架保持部件611的载置面611a上的环状的框架F也下降,所以如图4的(c)所示使安装在环状的框架F上的粘合带T与扩展鼓621的上端缘接触而扩展。其结果是,由于对粘贴在粘合带T上的晶片10呈放射状作用牵引力,所以晶片10沿着连续地形成有上述的盾构隧道12而强度降低的分割预定线分离成各个器件11并且在器件11之间形成有间隔(分离工序)。另外,关于上述的保护带剥离工序,只要在该分离工序中在粘合带T被扩展之前则任意时间点均可以,例如,也可以在晶片10被保持在上述框架保持部件611上之后实施。
接着,如图4的(c)所示,使拾取夹头63工作而对器件11进行吸附,并将器件11从粘合带T剥离而进行拾取,并搬送至未图示的芯片接合工序。另外,在拾取工序中,由于如上述那样粘贴在粘合带T上的各个器件11之间的间隙变扩宽,所以不会使相邻的器件11接触而容易进行拾取。
本发明如本实施方式所示的那样,包含盾构隧道形成工序,将该晶片定位在具有对晶片进行收纳的开口部的框架的该开口部,利用粘合带将该晶片的背面和该框架粘贴为一体,利用该框架对该晶片进行支承,将该晶片的正面侧保持在卡盘工作台上,并使对于该晶片和该粘合带具有透过性的波长的激光光线穿过该粘合带而定位在与分割预定线对应的背面从而进行照射,沿着该分割预定线形成由细孔和围绕该细孔的非晶质构成的盾构隧道。因此,即使在该晶片的正面侧的分割预定线或与其相邻的位置处存在遮蔽激光光线的部件,也不会造成任何影响,能够实施盾构隧道形成加工。进而,使在该盾构隧道形成工序时照射的激光光线穿过对晶片的背面侧进行保持的粘合带而进行照射,由此,在激光光线照射后的拾取工序时,能够从形成有器件的晶片的正面侧进行拾取,当在后面的芯片接合工序等中对器件进行搬送时,不需要另外设置翻转的工序等,不会使生产效率降低。
本发明并不仅限于上述实施方式,能够演变出各种变形例。例如,在本实施方式中,作为被加工物,例示了钽酸锂(LiTaO3)基板,但并不仅限于此,例如能够采用SiC基板、Si基板、氮化镓基板、蓝宝石基板。并且,在本实施方式中,在实施盾构隧道形成工序之前,将保护带粘贴在晶片的正面侧而保持在卡盘工作台上,但该保护带并不是必须的,当在晶片的正面侧形成有保护膜的情况下,可以省略该保护带。进而,在本实施方式中,示出了对粘合带进行扩展而使器件分离并实施拾取工序的技术,但并不仅限于此,例如,也可以在沿着分割预定线施加外力从而使器件分离之后,通过照射紫外线而使粘合带的粘合性丧失并采用实施拾取工序的构件。
Claims (3)
1.一种晶片的加工方法,将在正面上由交叉的多条分割预定线划分而形成有多个器件的晶片分割成各个器件芯片,其中,该晶片的加工方法具有如下的工序:
框架支承工序,将该晶片定位在具有对晶片进行收纳的开口部的环状框架的该开口部,利用粘合带将该晶片的背面和该环状框架粘贴为一体,利用该环状框架经由该粘合带对该晶片进行支承;以及
盾构隧道形成工序,在实施了该框架支承工序之后,利用卡盘工作台对该晶片的正面侧进行吸引保持,并穿过该粘合带对与分割预定线对应的晶片的背面照射对于该晶片和该粘合带具有透过性的波长的激光光线,沿着该分割预定线形成由细孔和围绕该细孔的非晶质构成的盾构隧道。
2.根据权利要求1所述的晶片的加工方法,其中,
该晶片的加工方法还具有如下的器件分离工序:在实施了该盾构隧道形成工序之后,对该粘合带进行扩展而将晶片分离成各个器件芯片。
3.根据权利要求2所述的晶片的加工方法,其中,
该晶片的加工方法还具有如下的保护部件配设工序:在实施该晶片支承工序之前,将保护部件配设在该晶片的正面侧,
在该器件分离工序中,在对该粘合带进行扩展之前将该保护部件剥离。
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CN110039204A (zh) * | 2018-01-16 | 2019-07-23 | 株式会社迪思科 | 被加工物的激光加工方法 |
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JP6821261B2 (ja) * | 2017-04-21 | 2021-01-27 | 株式会社ディスコ | 被加工物の加工方法 |
JP7281873B2 (ja) | 2018-05-14 | 2023-05-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP7166718B2 (ja) * | 2018-10-17 | 2022-11-08 | 株式会社ディスコ | ウェーハの加工方法 |
JP7285694B2 (ja) * | 2019-05-23 | 2023-06-02 | 株式会社ディスコ | レーザー加工装置の光軸調整方法 |
JP7382762B2 (ja) * | 2019-08-27 | 2023-11-17 | 株式会社ディスコ | レーザー加工装置の加工結果の良否判定方法 |
JP7341606B2 (ja) * | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | ウェーハの加工方法 |
JP7341607B2 (ja) * | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021064627A (ja) * | 2019-10-10 | 2021-04-22 | 株式会社ディスコ | ウェーハの加工方法 |
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