CN107093578A - 晶片的加工方法 - Google Patents
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Abstract
提供晶片的加工方法,在沿着分割预定线将晶片分割成各个器件时,能够防止因器件彼此的接触而导致的器件的损伤。一种晶片的加工方法,该晶片的加工方法包含如下的工序:框架支承工序,将晶片粘贴在周缘部被固定在框架上的粘合带上,从而借助粘合带而利用框架对晶片进行支承;激光加工工序,对分割预定线照射激光光线,从而沿着分割预定线形成强度降低部;以及分割工序,在使放射状张力作用于粘合带的状态下对晶片施加外力,从而沿着分割预定线将晶片分割成各个器件芯片。
Description
技术领域
本发明涉及晶片的加工方法,对正面被多条分割预定线划分成多个区域并在多个区域的各个内形成有器件的晶片沿着分割预定线进行分割。
背景技术
在下述专利文献1中公开了如下方法:对正面被多条分割预定线划分成多个区域并在多个区域的各个内形成有IC或LSI、LED等器件的晶片沿着分割预定线进行分割。在该方法中,首先,将晶片粘贴在周缘部被固定在框架上的粘合带上,由此,借助粘合带将晶片支承在框架上。接着,将聚光点定位在晶片的内部,并沿着分割预定线照射对于晶片具有透过性的波长的脉冲激光光线,由此,沿着分割预定线形成强度降低部。接着,对粘贴有晶片的粘合带施加放射状张力,由此,沿着分割预定线将晶片分割成各个器件。
专利文献1:日本特开2014-221483号公报
在上述专利文献1所公开的方法中,当沿着分割预定线将晶片分割成各个器件芯片时,担心夹着分割预定线而相邻的器件芯片间的距离局部地变窄,因器件芯片彼此接触而使器件芯片损伤。
发明内容
因此,本发明的目的在于,提供晶片的加工方法,在沿着分割预定线将晶片分割成各个器件芯片时,能够防止因器件芯片彼此的接触而导致的器件芯片的损伤。
根据本发明,提供晶片的加工方法,将正面被交叉形成的多条分割预定线划分成多个区域并在该多个区域的各个内形成有器件的晶片沿着该分割预定线分割成各个器件芯片,其中,该晶片的加工方法包含如下的工序:框架支承工序,将该晶片粘贴在周缘部被固定在环状框架上的粘合带上,从而借助该粘合带而利用该环状框架对该晶片进行支承;激光加工工序,对该分割预定线照射激光光线,从而沿着该分割预定线形成强度降低部;以及分割工序,在使放射状张力作用于该粘合带的状态下对该晶片施加外力,从而沿着该分割预定线将该晶片分割成各个器件芯片。
优选在该框架支承工序中,将该晶片的背面粘贴在该粘合带上。在该分割工序中,优选将该晶片载置在柔软性部件上,并通过辊对该晶片施加外力。在该分割工序中,优选将具有圆筒形内周面的第1框部件配置在该粘合带的一个面上,并且将具有与该第1框部件的该圆筒形内周面对应的圆筒形外周面的第2框部件配置在该粘合带的另一个面上,利用该第1框部件和该第2框部件将该粘合带夹住,由此,使放射状张力作用于该粘合带。在该激光加工工序中,优选将聚光点定位在该晶片的内部,并沿着该分割预定线照射对于该晶片具有透过性的波长的激光光线,从而沿着该分割预定线在该晶片的内部形成改质层。在该激光加工工序中,优选将聚光点定位在该晶片的内部,并沿着该分割预定线照射对于该晶片具有透过性的波长的激光光线,从而沿着该分割预定线形成盾构隧道。在该激光加工工序中,优选将聚光点定位在该晶片的上表面,并沿着该分割预定线照射对于该晶片具有吸收性的波长的激光光线,从而沿着该分割预定线在该晶片的上表面形成加工槽。
根据本发明的晶片的加工方法,在沿着分割预定线将晶片分割成各个器件芯片时,由于对粘合带作用有放射状张力,所以即使对晶片施加外力也不会使相邻的器件芯片间的距离变窄,能够防止因器件芯片彼此的接触而导致的器件芯片的损伤。
附图说明
图1是晶片的立体图。
图2是示出借助粘合带将图1所示的晶片支承在环状框架上的状态的立体图。
图3是示出实施激光加工工序的状态的立体图。
图4是张力产生装置的立体图。
图5的(a)和(b)是示出通过图4所示的张力产生装置使放射状张力作用于粘合带时的状态的剖视图。
图6是示出通过切断器具将具有强度降低部的晶片分割成各个器件芯片的状态的立体图。
图7是第1框部件和第2框部件的立体图。
图8是示出通过图7所示的第1、第2框部件使放射状张力作用于粘合带的状态的剖视图。
标号说明
2:晶片;4:晶片的正面;6:分割预定线;8:器件;10:环状框架;12:粘合带;28:强度降低部;44:辊;48:第1框部件;50:第2框部件。
具体实施方式
以下,一边参照附图一边对本发明的晶片的加工方法的实施方式进行说明。
在图1中以标号2示出的晶片由硅、蓝宝石、碳化硅或氮化镓等材料形成而成。在圆盘状的晶片2的正面4上呈格子状形成有多条分割预定线6,晶片2的正面4被分割预定线6划分成多个区域。在多个区域的各个内形成有IC或LSI、LED等器件8。在图2中示出了由钢材等金属材料形成的环状框架10和由聚烯烃或氯乙烯(PVC)等树脂材料形成的圆形的粘合带12。优选环状框架10的内周缘为圆形。如图2所示,通过将粘合带12的周缘部粘贴在环状框架10的内周缘部而将粘合带12固定在环状框架10上。并且在本发明中,首先,实施框架支承工序,通过将晶片2粘贴在粘合带12上而利用环状框架10并借助粘合带12对晶片2进行支承。在本实施方式中如图2所示,将未形成有器件8的晶片2的背面粘贴在粘合带12上。
在实施了框架支承工序之后,实施激光加工工序,对分割预定线6照射激光光线从而沿着分割预定线6形成强度降低部。例如能够使用在图3中示出了其一部分的激光加工装置14来实施激光加工工序。激光加工装置14具有卡盘工作台16、激光光线照射单元18、拍摄单元20以及控制单元(未图示。)。
由多孔质材料形成且实际上水平延伸的圆形的卡盘工作台16的上表面通过流路而与吸引单元(未图示。)连接。并且卡盘工作台16构成为旋转自如而通过旋转单元(未图示。)进行旋转,并且通过第1进给单元在X方向上进行进退且通过第2进给单元在Y方向上进行进退(均未图示。)。另外,X方向为图3中箭头X所示的方向,Y方向为图3中箭头Y所示的方向、是与X方向垂直的方向。由X方向和Y方向所规定的平面实际上是水平的。
激光光线照射单元18包含:外壳22,其实际上水平延伸;脉冲激光光线振荡单元(未图示。),其内设在外壳22中;聚光器24,其配置在外壳22的前端;以及聚光点位置调整单元(未图示。)。脉冲激光光线振荡单元具有:脉冲激光振荡器;调整单元,其用于对脉冲激光光线的输出进行调整;以及设定单元,其用于对脉冲激光光线的重复频率进行设定(均未图示。)。聚光器24具有聚光透镜26,该聚光透镜26用于对从脉冲激光光线振荡单元振荡出的脉冲激光光线进行会聚。
与聚光器24隔开间隔地附设在外壳22的前端的拍摄单元20包含用于对晶片等被加工物进行拍摄的CCD等拍摄元件(未图示。)。拍摄单元20所拍摄的图像的信号被输出到由计算机构成的控制单元。
在激光加工工序中,首先,以正面4为上侧将晶片2载置在卡盘工作台16的上表面上,使吸引单元工作而使卡盘工作台16的上表面产生负压,将晶片2的背面侧(粘合带侧)吸附在卡盘工作台16的上表面上。另外,通过配置在卡盘工作台16的周缘的多个夹具(未图示。)对在图3中省略了图示的环状框架10进行固定。接着,通过第1进给单元使卡盘工作台16移动至拍摄单元20的下方。然后,通过拍摄单元20和控制单元来执行用于进行多条分割预定线6与聚光器24的对位的图案匹配等图像处理,并进行激光光线照射位置的对准。接着,通过第1进给单元使卡盘工作台16移动,将规定的分割预定线6的长度方向一端部定位在聚光器24的正下方。接着,通过聚光点位置调整单元使聚光器24在上下方向上移动,将脉冲激光光线的聚光点调整至晶片2的厚度方向上的规定的位置。然后,使激光光线照射单元18工作,一边从聚光器24对规定的分割预定线6照射脉冲激光光线,一边通过第1进给单元使卡盘工作台16以规定的加工进给速度在X方向上移动。在规定的分割预定线6的长度方向另一端部到达聚光器24的正下方之后,使激光光线照射单元18和第1进给单元停止。由此,沿着规定的分割预定线6形成强度降低部28。并且,对其他的分割预定线6也形成强度降低部28。
在激光加工工序中,例如,能够沿着分割预定线6在晶片2的内部形成作为强度降低部28的改质层。例如在以下的加工条件下,将聚光点定位在晶片2的内部,并沿着分割预定线6照射对于晶片2具有透过性的波长的激光光线,由此,形成得到改质层。
激光光线的波长:1340nm
平均输出:0.5W
重复频率:50kHz
聚光光斑直径:φ1μm
加工进给速度:50mm/秒
或者,也可以作为强度降低部28,沿着分割预定线6形成多个在晶片2的厚度方向上延伸的盾构隧道。盾构隧道由从晶片2的上表面(将晶片2载置在卡盘工作台16上的状态下的上表面,在图示的实施方式中为正面4)一直延伸到位于晶片2的内部的聚光点为止的直径为φ1μm左右的细孔和形成在细孔的周围的直径为φ10μm左右的非晶质构成。关于盾构隧道,可以在分割预定线6的长度方向上隔开间隔(例如10μm左右)地形成,也可以是在分割预定线6的长度方向上相邻的非晶质彼此重复。例如在以下的加工条件下,将聚光点定位在晶片2的内部,并沿着分割预定线6照射对于晶片2具有透过性的波长的激光光线,由此,形成得到盾构隧道。优选聚光点位置是接近激光光线所入射的面的相反一侧的面的内部。另外,下述折射率是晶片2的折射率,下述数值孔径是聚光器24的聚光透镜26的数值孔径。
激光光线的波长:1030nm
平均输出:3W
重复频率:50kHz
聚光光斑直径:φ10μm
折射率/数值孔径:0.05~0.2
加工进给速度:500mm/秒
或者,也可以沿着分割预定线6在晶片2的上表面形成作为强度降低部28的加工槽。例如在以下的加工条件下,将聚光点定位在晶片2的上表面,沿着分割预定线6照射对于晶片2具有吸收性的波长的激光光线,并对晶片2的上表面进行烧蚀加工,由此,形成得到加工槽。
激光光线的波长:355nm
平均输出:5W
重复频率:50kHz
聚光光斑直径:φ10μm
加工进给速度:100mm/秒
在实施了激光加工工序之后,实施分割工序,在使放射状张力作用于粘合带12的状态下对晶片2施加外力,由此,沿着分割预定线6将晶片2分割成各个器件8。要想使放射状张力作用于粘合带12,则例如能够使用图4所示的张力产生装置30来进行。张力产生装置30包含圆盘状的基板32和从基板32的上表面朝向上方延伸的圆筒状的支承台34。在支承台34的上表面固定有由合成橡胶等形成的圆盘状的柔软性部件36。与支承台34的直径大致相同的柔软性部件36的直径比晶片2的直径大,且比环状框架10的内径小。如图4所示,基板32的外径比支承台34的外径大,在基板32的周缘部的上表面,在周向上隔开间隔地配置有多个在上下方向上延伸的气缸38。各气缸38的上端部与环状升降台40连结。环状升降台40的内径和外径分别与环状框架10的内径和外径对应,在环状升降台40的内周面与支承台34和柔软性部件36的外周面之间存在间隙。在环状升降台40的外周缘部,在周向上隔开间隔地配置有多个夹具42。
在使用张力产生装置30而进行的分割工序中,首先,使张力产生装置30的各气缸38工作,在上下方向上对柔软性部件36的上表面和环状升降台40的上表面进行调节。接着,如图5的(a)所示,以正面4为上侧将晶片2载置在柔软性部件36的上表面上,并且通过多个夹具42将环状框架10的外周缘部固定在环状升降台40上。接着,如图5的(b)所示,使各气缸38工作,并使环状升降台40下降至规定的高度。这样的话,由于环状框架10也与环状升降台40一起下降,所以对周缘被固定在环状框架10上的粘合带12作用放射状张力。放射状张力不是凭自身便能够将晶片2分割成各个器件芯片的程度的大小。接着,在使放射状张力作用于粘合带12的状态下对晶片2施加外力,由此,沿着分割预定线6将晶片2分割成各个器件芯片。如图5的(b)所示,外力的施加能够通过如下方式进行:使树脂制辊44按照箭头A所示的方向在晶片2的正面4上滚动,使下方向的力作用在晶片2上。并且外力的施加也能够使图6所示的金属制切断器具46沿着分割预定线6进行作用而进行。
另外,要想在分割工序中使放射状张力作用于粘合带12,则也能够使用图7所示的第1框部件48和第2框部件50来进行。第1框部件48和第2框部件50共同形成为环状。第1框部件48具有圆筒形内周面,第2框部件50具有与第1框部件48的圆筒形内周面对应的圆筒形外周面。第1框部件48的内径和第2框部件50的内径比晶片2的直径大,第1框部件48的外径和第2框部件50的外径比环状框架10的内径小。虽然第1框部件48的内径和第2框部件50的外径大致为相同直径,但第1框部件48的内径比第2框部件50的外径稍大。
在使用第1框部件48和第2框部件50而进行的分割工序中,首先,将第1框部件48配置在粘合带12的一个面上,并且将第2框部件50配置在粘合带12的另一个面上。接着,如图8所示,将第1框部件48和第2框部件50朝向粘合带12压入,利用第1框部件48和第2框部件50将粘合带12夹住。这样的话,对周缘被固定在环状框架10上的粘合带12作用放射状张力。该情况下的放射状张力也与使用了张力产生装置30的情况同样,不是凭自身便能够将晶片2分割成各个器件芯片的程度的大小。接着,在使放射状张力作用于粘合带12的状态下对晶片2施加外力,由此,沿着分割预定线6将晶片2分割成各个器件芯片。外力的施加与使用了张力产生装置30的情况同样,能够使用图5所示的辊44或图6所示的切断器具46来进行。
当在分割工序中沿着分割预定线6对晶片2进行分割时,由于对粘合带12作用有放射状张力,所以相邻的器件芯片间的距离不会变窄。因此根据本发明,能够防止因器件芯片彼此的接触而导致的器件芯片的损伤。
另外在图示的实施方式中,以将未形成器件8的晶片2的背面粘贴在粘合带12上为例来进行说明,但在将聚光点定位在晶片2的内部,沿着分割预定线6形成作为强度降低部28的改质层或盾构隧道的情况下,为了不因器件8而妨碍激光光线,优选以晶片2的背面为上侧将晶片2的正面4粘贴在粘合带12上,从晶片2的背面照射激光光线。在该情况下,拍摄单元20包含能够从晶片2的背面对分割预定线6进行拍摄的红外线CCD。
Claims (7)
1.一种晶片的加工方法,将正面被交叉形成的多条分割预定线划分成多个区域并在该多个区域的各个内形成有器件的晶片沿着该分割预定线分割成各个器件芯片,其中,该晶片的加工方法包含如下的工序:
框架支承工序,将该晶片粘贴在周缘部被固定在环状框架上的粘合带上,从而借助该粘合带而利用该环状框架对该晶片进行支承;
激光加工工序,对该分割预定线照射激光光线,从而沿着该分割预定线形成强度降低部;以及
分割工序,在使放射状张力作用于该粘合带的状态下对该晶片施加外力,从而沿着该分割预定线将该晶片分割成各个器件芯片。
2.根据权利要求1所述的晶片的加工方法,其中,
在该框架支承工序中,将该晶片的背面粘贴在该粘合带上。
3.根据权利要求1所述的晶片的加工方法,其中,
在该分割工序中,将该晶片载置在柔软性部件上,并通过辊对该晶片施加外力。
4.根据权利要求1所述的晶片的加工方法,其中,
在该分割工序中,将具有圆筒形内周面的第1框部件配置在该粘合带的一个面上,并且将具有与该第1框部件的该圆筒形内周面对应的圆筒形外周面的第2框部件配置在该粘合带的另一个面上,利用该第1框部件和该第2框部件将该粘合带夹住,从而使放射状张力作用于该粘合带。
5.根据权利要求1所述的晶片的加工方法,其中,
在该激光加工工序中,将聚光点定位在该晶片的内部,并沿着该分割预定线照射对于该晶片具有透过性的波长的激光光线,从而沿着该分割预定线在该晶片的内部形成改质层。
6.根据权利要求1所述的晶片的加工方法,其中,
在该激光加工工序中,将聚光点定位在该晶片的内部,并沿着该分割预定线照射对于该晶片具有透过性的波长的激光光线,从而沿着该分割预定线形成盾构隧道。
7.根据权利要求1所述的晶片的加工方法,其中,
在该激光加工工序中,将聚光点定位在该晶片的上表面,并沿着该分割预定线照射对于该晶片具有吸收性的波长的激光光线,从而沿着该分割预定线在该晶片的上表面形成加工槽。
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