CN107112215B - 半导体晶圆的支撑方法及其支撑装置 - Google Patents

半导体晶圆的支撑方法及其支撑装置 Download PDF

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Publication number
CN107112215B
CN107112215B CN201580060866.4A CN201580060866A CN107112215B CN 107112215 B CN107112215 B CN 107112215B CN 201580060866 A CN201580060866 A CN 201580060866A CN 107112215 B CN107112215 B CN 107112215B
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China
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supporting
chassis
base
pin
base portion
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Chinese (zh)
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CN107112215A (zh
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中山孝
松山博行
蛇川顺博
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Sumco Corp
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Sumco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201580060866.4A 2014-11-12 2015-08-26 半导体晶圆的支撑方法及其支撑装置 Active CN107112215B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-229393 2014-11-12
JP2014229393A JP6369297B2 (ja) 2014-11-12 2014-11-12 半導体ウェーハの支持方法及びその支持装置
PCT/JP2015/073974 WO2016075980A1 (ja) 2014-11-12 2015-08-26 半導体ウェーハの支持方法及びその支持装置

Publications (2)

Publication Number Publication Date
CN107112215A CN107112215A (zh) 2017-08-29
CN107112215B true CN107112215B (zh) 2020-04-10

Family

ID=55954075

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Application Number Title Priority Date Filing Date
CN201580060866.4A Active CN107112215B (zh) 2014-11-12 2015-08-26 半导体晶圆的支撑方法及其支撑装置

Country Status (5)

Country Link
JP (1) JP6369297B2 (ja)
KR (1) KR101934872B1 (ja)
CN (1) CN107112215B (ja)
DE (1) DE112015005137B4 (ja)
WO (1) WO2016075980A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107749407B (zh) * 2017-09-22 2020-08-28 沈阳拓荆科技有限公司 晶圆承载盘及其支撑结构
CN109148353A (zh) * 2018-08-15 2019-01-04 深圳市华星光电技术有限公司 一种基板承托盘

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101276731A (zh) * 2007-03-27 2008-10-01 冲电气工业株式会社 半导体制造装置及使用该装置的半导体晶片的制造方法
JP2009246067A (ja) * 2008-03-31 2009-10-22 Takatori Corp 基板への加熱接着テープの貼り付け方法及び貼り付け装置
KR100935418B1 (ko) * 2007-10-24 2010-01-06 이연희 반도체웨이퍼 증착장비의 샤워헤드 홀 가공장치
CN102593035A (zh) * 2008-08-08 2012-07-18 台湾积体电路制造股份有限公司 用于半导体晶片制造工艺的晶片承载装置
CN102842523A (zh) * 2011-06-21 2012-12-26 霓佳斯株式会社 热处理炉及热处理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10003639C2 (de) * 2000-01-28 2003-06-18 Steag Rtp Systems Gmbh Vorrichtung zum thermischen Behandeln von Substraten
JP2004200271A (ja) * 2002-12-17 2004-07-15 Shin Etsu Handotai Co Ltd 熱処理用ウェーハ支持具
KR101163682B1 (ko) * 2002-12-20 2012-07-09 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 장치
KR100387726B1 (ko) * 2003-02-14 2003-06-18 코닉 시스템 주식회사 급속열처리 장치용 에지링
JP2006005177A (ja) * 2004-06-17 2006-01-05 Tokyo Electron Ltd 熱処理装置
KR100818842B1 (ko) * 2006-12-27 2008-04-01 주식회사 실트론 웨이퍼의 열처리시 슬립을 방지할 수 있는 웨이퍼 지지 핀및 웨이퍼의 열처리 방법
US8186661B2 (en) * 2008-09-16 2012-05-29 Memc Electronic Materials, Inc. Wafer holder for supporting a semiconductor wafer during a thermal treatment process
JP2011029225A (ja) * 2009-07-21 2011-02-10 Sumco Corp 半導体ウェーハ支持方法，半導体ウェーハ支持用ピン及び半導体ウェーハ支持装置
JP5545090B2 (ja) * 2010-07-13 2014-07-09 株式会社Ｓｕｍｃｏ ウェーハ支持治具及び軸状部材並びにシリコンウェーハの熱処理方法
KR20120119781A (ko) * 2011-04-22 2012-10-31 삼성전자주식회사 지지 유닛 및 이를 가지는 기판 처리 장치
JP5964630B2 (ja) * 2012-03-27 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP6085558B2 (ja) * 2013-04-19 2017-02-22 テクノクオーツ株式会社 ウェ−ハ支持ピン
JP6138610B2 (ja) * 2013-07-10 2017-05-31 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101276731A (zh) * 2007-03-27 2008-10-01 冲电气工业株式会社 半导体制造装置及使用该装置的半导体晶片的制造方法
KR100935418B1 (ko) * 2007-10-24 2010-01-06 이연희 반도체웨이퍼 증착장비의 샤워헤드 홀 가공장치
JP2009246067A (ja) * 2008-03-31 2009-10-22 Takatori Corp 基板への加熱接着テープの貼り付け方法及び貼り付け装置
CN102593035A (zh) * 2008-08-08 2012-07-18 台湾积体电路制造股份有限公司 用于半导体晶片制造工艺的晶片承载装置
CN102842523A (zh) * 2011-06-21 2012-12-26 霓佳斯株式会社 热处理炉及热处理装置

Also Published As

Publication number Publication date
DE112015005137T5 (de) 2017-08-03
WO2016075980A1 (ja) 2016-05-19
CN107112215A (zh) 2017-08-29
KR101934872B1 (ko) 2019-03-18
JP6369297B2 (ja) 2018-08-08
JP2016096166A (ja) 2016-05-26
DE112015005137B4 (de) 2023-09-07
KR20170072183A (ko) 2017-06-26

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