CN107112215B - Method and device for supporting semiconductor wafer - Google Patents

Method and device for supporting semiconductor wafer Download PDF

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Publication number
CN107112215B
CN107112215B CN201580060866.4A CN201580060866A CN107112215B CN 107112215 B CN107112215 B CN 107112215B CN 201580060866 A CN201580060866 A CN 201580060866A CN 107112215 B CN107112215 B CN 107112215B
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Prior art keywords
supporting
chassis
base
pin
base portion
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CN107112215A (en
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中山孝
松山博行
蛇川顺博
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Sumco Corp
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Sumco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

A method for supporting a semiconductor wafer, wherein a semiconductor wafer thermally treated by a rapid thermal processing apparatus using a heat lamp is horizontally supported on the lower surface of the wafer above a base plate by at least 3 support pins fixed to the base plate. In the supporting method, a support pin is integrally formed with: the semiconductor wafer processing apparatus includes a front end portion having a contact portion contacting a lower surface of a semiconductor wafer, a base portion fixed to a chassis, and a cylindrical portion extending from the front end portion to the base portion, wherein the front end portion is formed to have a tip smaller than the cylindrical portion, and a support pin is disposed obliquely so that the cylindrical portion and the base portion do not contact a vertical line hanging from the contact portion toward the chassis.

Description

Method and device for supporting semiconductor wafer
Technical Field
The present invention relates to a method and apparatus for supporting a semiconductor wafer horizontally, the method and apparatus supporting the semiconductor wafer being thermally processed by a rapid thermal processing apparatus using a heating lamp.
In addition, the application claims that the application refers to the full content of the special application 2014-229393 based on the priority of the special application 2014-229393 applied in Japan at 11, 12 days in 2014.
Background
In recent years, progress of a technology of a semiconductor integrated circuit (LSI) which becomes the center thereof has contributed relatively greatly in development of electronic/communication devices. In general, in the manufacture of semiconductor devices such as LSIs, semiconductor wafers are used, which are formed by polishing, chamfering, and the like, wafers obtained by slicing a single crystal semiconductor ingot (ingot) pulled by a Czochralski (CZ) method.
In the device manufacturing process using the semiconductor wafer or the processing process of the semiconductor wafer itself, for example, a heat treatment is performed on the surface layer of the wafer to form a defect-free layer and/or to form oxide precipitates and control them. As this heat treatment method, a Rapid Thermal Annealing (RTA) method using a heating lamp using infrared rays is known. In this heat treatment method, since the temperature can be rapidly raised to a predetermined temperature and rapidly cooled from the predetermined temperature, the semiconductor wafer can be heat-treated in an extremely short time.
The heat treatment of a semiconductor wafer at a high temperature of 1000 ℃ or higher is required in the device process, and problems in the heat treatment process of the conventional semiconductor wafer are as follows: when the heat treatment is performed at a high temperature of 1000 ℃ or higher, a defect called slip dislocation (slip) is generated on the wafer surface. When such slip dislocation occurs, the mechanical strength of the wafer is reduced, and device characteristics are adversely affected.
The slip dislocation occurs when the semiconductor wafer is supported by the support pins and subjected to heat treatment because the temperature of a portion of the semiconductor wafer in contact with the support pins is locally lowered. The reason for the local temperature decrease of the wafer is a heat transfer phenomenon to the support pins, in which the heat of the heated wafer escapes to the support pins, and a light shielding phenomenon by the support pins, in which the support pins shield the light of the infrared lamps facing the support pin contact portions of the lower surface of the wafer, and thus the heat treatment temperature tends to be higher.
Patent document 1 discloses a method and an apparatus for supporting a semiconductor wafer, which suppress the occurrence of defects due to slip dislocation during heat treatment. In the supporting method and the supporting apparatus for the semiconductor wafer, as shown in fig. 7, a plurality of supporting pins 21 are used to support the semiconductor wafer on the lower surface WBWhen horizontally supporting a semiconductor wafer W to be thermally processed, the support pins 21 are provided withA planar upper surface 21a, and the upper surface 21a of the support pins 21 is set to be opposite to the lower surface W of the semiconductor wafer WBSpecifically, the upper surface 21a of the pin tip portion 21u is formed in a planar shape perpendicular to the pin shaft 21b, and a pin holder (pin holder) 12 for holding the pin 21 in a state of being inclined at an inclination angle α with respect to the vertical direction is fixed to the upper surface 20a of the base plate (base tray) 20, and a holding hole 12a is formed in the pin holder 12 for holding the pin 21 in a state of being inclined at an inclination angle α with respect to the vertical direction.
According to the supporting method of patent document 1, the supporting pins 21 are formed by the corner 21d (the uppermost portion of the linear edge) formed by the upper surface 21a and the side surface 21c and the lower surface W of the semiconductor wafer WBContact between the support pins 21 and the lower surface W of the semiconductor wafer can be reducedBThereby, the contact area from the lower surface W of the semiconductor wafer W can be reducedBThe heat escaping to the support pins 21 reduces the temperature difference in the surface of the semiconductor wafer W, and can suppress the occurrence of defects due to slip dislocation generated by thermal stress.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2011-29225 (claim 1, paragraphs [0014], [0059] to [0064], FIG. 9).
Disclosure of Invention
Problems to be solved by the invention
However, in the supporting method of patent document 1 shown in fig. 7, the support pins 21 and the lower surface W of the semiconductor wafer are reducedBCan reduce the contact area from the lower surface W of the semiconductor wafer WBThe amount of heat transferred to escape from the support pins 21 is determined by the fact that the cylindrical portions 21e of the support pins 21 are located on the lower surface W of the semiconductor wafer WBThe corner 21d of the tip 21u of the support pin 21 is perpendicular to the vertical line X and faces the lower surface W of the semiconductor waferBThe light of the infrared lamp at the corner 21d is shielded by the cylindrical portion 21e of the support pin 21And (6) shielding. Therefore, in the supporting method of patent document 1, the light shielding phenomenon of the corner portion 21d by the supporting pins 21 is generated, and the temperature of the wafer is locally lowered when the semiconductor wafer is heat-treated, and the occurrence of slip dislocation cannot be reliably prevented when the heat treatment temperature is increased to 1300 ℃.
The invention aims to provide a supporting method and a supporting device for a semiconductor wafer, which reduce heat transfer from a heated wafer to supporting pins when the semiconductor wafer is subjected to heat treatment, eliminate light shielding of infrared lamps facing the supporting pin contact part of the lower surface of the wafer due to the supporting pins, and reliably prevent the occurrence of slip dislocation even in the heat treatment at a high temperature of 1300 ℃.
Means for solving the problems
In the first aspect of the present invention, as shown in fig. 1 and 2, in the method for supporting a semiconductor wafer, a semiconductor wafer W thermally treated by a rapid thermal processing apparatus using a heat lamp is supported on a lower surface W of the wafer W above a base plate 52 by at least 3 support pins 51 fixed to the base plate 52BHorizontally, characterized in that the support pin 51 is integrally formed with: has a lower surface W corresponding to the semiconductor wafer WBThe front end 51a of the contact portion Y, the base 51b fixed to the chassis 52, and the cylindrical portion 51c extending from the front end 51a to the base 51b are formed so that the front end 51a is narrower than the cylindrical portion 51c, and the support pin 51 is disposed so as to be inclined so that the cylindrical portion 51c and the base 51b do not contact a vertical line X that hangs from the contact portion Y toward the chassis 52.
In view 2 of the present invention, in the method for supporting a semiconductor wafer according to the invention of view 1, as shown in fig. 2, a recess 52b is formed in an upper surface 52a of a base 52, and a base 51b is inserted into the recess 52b and fixed to the base 52.
In view 3 of the present invention, in view of the invention of view 2, in the method for supporting a semiconductor wafer, as shown in fig. 2, the base portion 51b is inserted into the recess 52b and directly fixed to the base plate 52 by soldering.
In view 4 of the present invention, in the method for supporting a semiconductor wafer according to view 1, as shown in fig. 3 and 4, a pin holder 54 for holding a base portion 51b or a base portion 51b and a cylindrical portion 51c is fixed to an upper surface 52a of a base plate 52, and the pin holder 54 is disposed so as not to contact a vertical line X that hangs from a contact portion Y toward the base plate 52.
In view of the invention of claim 5, in the method for supporting a semiconductor wafer according to claim 1, as shown in fig. 5, a through hole 52c through which the base portion 51b or the base portion 51b and the cylindrical portion 51c can pass is formed in the base plate 52, a pin holder 55 for holding the base portion 51b or the base portion 51b and the cylindrical portion 51c which pass through the through hole 52c is fixed to the lower surface 52d of the base plate 52, and the pin holder 55 is disposed so as not to contact a vertical line X which hangs down from the contact portion Y to the base plate 52 side.
In view 6 of the present invention, which is the invention according to any one of the views 1 to 5, the method for supporting a semiconductor wafer comprises the steps of using quartz or SiC as the support pins 51 and using quartz as the base plate 52.
In view 7 of the present invention, which is the invention according to any one of the aspects 1 to 6, in the method for supporting a semiconductor wafer, as shown in fig. 1, the support pins 51 are disposed so as to be inclined such that the distal end portions 51a are located outside the base plate 52 with respect to the base portions 51 b.
In view 8 of the present invention, which is the invention according to any one of the aspects 1 to 6, in the method for supporting a semiconductor wafer, as shown in fig. 6, the support pins 51 are arranged so as to be inclined such that the distal end portions 51a are located inside the base plate 52 with respect to the base portions 51 b.
In the 9 th aspect of the present invention, as shown in fig. 1 and 2, a support device 50 for horizontally supporting a semiconductor wafer W to be thermally treated by a rapid thermal processing apparatus using a heat lamp, the support device having at least 3 support pins 51 and a base plate 52 for fixing the support pins 51, the support pins 51 integrally including: has a lower surface W corresponding to the semiconductor wafer WB A tip part 51a of the contact part Y, a base part 51b fixed to the chassis 52, and a cylindrical part 51c extending from the tip part 51a to the base part 51b, wherein the tip part 51a is formed to be thinner than the cylindrical part 51c, and the cylindrical part 51c and the base part 51b are inclined so as not to contact a vertical line X hanging from the contact part Y to the chassis 52 sideThe support pin 51 is disposed obliquely.
In view of the invention according to the 10 th aspect of the present invention, in the apparatus for supporting a semiconductor wafer according to the 9 th aspect of the present invention, as shown in fig. 2, a recess 52b is formed in an upper surface 52a of a base 52, and a base 51b is inserted into the recess 52b and fixed to the base 52.
In view 11 of the present invention, in view of the invention according to view 10, as shown in fig. 2, a base portion 51b is inserted into a recess 52b and directly fixed to a base plate 52 by soldering.
In view of the 12 th aspect of the present invention, in the invention according to the 9 th aspect, as shown in fig. 3 and 4, the pin holder 54 for holding the base portion 51b or the base portion 51b and the cylindrical portion 51c is fixed to the upper surface 52a of the base plate 52, and the pin holder 54 is disposed so as not to contact the vertical line X that hangs from the contact portion Y toward the base plate 52 side.
In view 13 of the present invention, in view of the invention of view 9, as shown in fig. 5, the base plate 52 is provided with a through hole 52c through which the base portion 51b or the base portion 51b and the cylindrical portion 51c can pass, and the base portion 51b or the base portion 51b and the cylindrical portion 51c, which pass through the through hole 52c, are fixed to the lower surface 52d of the base plate 52, and the pin holder 55 is disposed so as not to contact the vertical line X that hangs down from the contact portion Y to the base plate 52 side.
The 14 th aspect of the present invention is the invention according to any one of the 9 th to 13 th aspects, and relates to a supporting device for a semiconductor wafer, wherein the supporting pins 51 are made of quartz or SiC, and the base plate 52 is made of quartz.
The 15 th aspect of the present invention is the invention according to any one of the 9 th to 14 th aspects, and the support pin 51 is arranged obliquely so that the tip portion 51a is positioned further outside the base plate 52 than the base portion 51b, as shown in fig. 1.
The 16 th aspect of the present invention is the invention according to any one of the 9 th to 14 th aspects, and the support pin 51 is arranged to be inclined such that the tip portion 51a is located inside the base plate 52 with respect to the base portion 51b, as shown in fig. 6.
Effects of the invention
According to the method for supporting a semiconductor wafer of claim 1 and the supporting apparatus of claim 9 of the present invention, since the tip portion is formed to be narrower than the cylindrical portion and the supporting pins are arranged obliquely so that the cylindrical portion and the base portion do not contact a vertical line that is perpendicular to the base plate side from the supporting pin contact portion, even when the semiconductor wafer is heat-treated at a high temperature of 1300 ℃, heat transfer from the heated wafer to the supporting pins is reduced and a portion that shields light from the infrared lamp is not formed below the supporting pin contact portion. Specifically, the support pins are inclined so that the light from the infrared lamp is directly applied to the distal end portions of the support pins, and therefore the temperature rise at the distal end portions is further increased. The area of the shadow of the tip portion on the lower surface of the wafer due to the light is minimized. Thus, the temperature drop of the wafer at the support pin contact portion is extremely low, and the occurrence of slip dislocation can be reliably prevented.
According to the method for supporting a semiconductor wafer of claim 2 and the supporting apparatus of claim 10 of the present invention, since only the base portion of the supporting pin is inserted into the recess formed in the upper surface of the base plate and fixed to the base plate, the supporting pin can be easily fixed to the base plate, and the supporting pin can be stably fixed to the base plate.
According to the method for supporting a semiconductor wafer of claim 3 and the supporting apparatus of claim 11 of the present invention, the base portion of the supporting pin is inserted into the recess and welded, whereby the supporting pin can be more stably fixed to the base plate.
According to the method for supporting a semiconductor wafer of claim 4 and the supporting apparatus of claim 12 of the present invention, the pin holder is disposed and fixed on the upper surface of the base plate so as not to contact with a vertical line that is perpendicular to the base plate from the support pin contact portion, and the base portion or the base portion and the cylindrical portion of the support pin are held by the pin holder, so that the support pin can be further stably fixed on the base plate, and light from the infrared lamp directed to the support pin contact portion on the lower surface of the wafer is not blocked by the pin holder.
According to the method for supporting a semiconductor wafer of claim 5 and the supporting apparatus of claim 13 of the present invention, the pin holder is disposed and fixed to the lower surface of the base plate so as not to contact a vertical line that is perpendicular to the base plate from the supporting pin contact portion, and the base portion or the base portion and the cylindrical portion of the supporting pin are inserted through the through hole of the base plate and held by the pin holder, so that the supporting pin can be further stably fixed to the base plate. In addition, compared with the supporting method of the 4 th aspect in which the pin holder is fixed to the upper surface of the base plate, the light of the infrared lamp directed to the lower surface of the wafer is not blocked by the pin holder, and the influence of the shadow in the lower surface of the wafer by the infrared lamp light generated by the pin holder can be further reduced.
According to the method for supporting a semiconductor wafer of claim 6 and the supporting apparatus of claim 14 of the present invention, the thermal conductivity is reduced by using quartz as the material of the supporting pins, and the heat flow from the lower surface of the wafer to the supporting pins can be suppressed. In addition, the material of the chassis is quartz, so that the temperature of the supporting part can be prevented from being reduced without shielding light. Further, the support pin is made of SiC, and thus has a strong strength and a stable shape at high temperature, and the tip portion 51a is stable in shape and can be prevented from being broken even when it has an acute angle shape.
According to the method for supporting a semiconductor wafer of claim 7 and the supporting apparatus of claim 15 of the present invention, if the supporting pins are disposed so that the tip portions thereof are inclined outward of the base plate from the base portion, shielding of the pins from light from the inclined direction of the outer periphery is minimized when the output of the infrared lamp on the outer periphery side is increased to compensate for a decrease in the outer periphery temperature of the semiconductor wafer, and temperature distribution in the wafer plane can be made uniform.
According to the method for supporting a semiconductor wafer of claim 8 and the supporting apparatus of claim 16 of the present invention, if the supporting pins are disposed so that the distal ends thereof are inclined inward of the base plate from the base, the supporting pins are less likely to be pulled out from the base plate due to a centrifugal force generated by the rotation of the base plate.
Drawings
Fig. 1 is a plan view of a supporting device for a semiconductor wafer and a front view of the supporting device according to embodiment 1 of the present invention.
Fig. 2 is a sectional view of a main portion of a supporting apparatus according to embodiment 1 of the present invention in a state of supporting a semiconductor wafer.
Fig. 3 is a sectional view of a main portion of a supporting apparatus for supporting a state of a semiconductor wafer according to embodiment 2 of the present invention.
Fig. 4 is a sectional view of a main portion of a supporting apparatus for supporting a state of a semiconductor wafer according to embodiment 3 of the present invention.
Fig. 5 is a sectional view of a main portion of a supporting apparatus for supporting a state of a semiconductor wafer according to embodiment 4 of the present invention.
Fig. 6 is a top view of other support means of the present invention and a front view of the support means thereof.
FIG. 7 is a side view of a main part of a conventional supporting apparatus for supporting a semiconductor wafer.
Detailed Description
Next, a mode for carrying out the present invention will be described with reference to the drawings.
< embodiment 1 >
As shown in fig. 1 and 2, a semiconductor wafer (hereinafter, simply referred to as a wafer) W, which is a supporting object of the present embodiment and is typified by a silicon wafer, is horizontally supported by a supporting device 50 for the semiconductor wafer installed in an RTA apparatus (rapid thermal processing apparatus) and is subjected to a thermal process by an infrared lamp (not shown). The RTA apparatus has a chamber (not shown) made of quartz. The infrared lamp includes a plurality of infrared lamps, and is disposed so as to surround the chamber from above and below and direct the irradiation direction of infrared rays toward the chamber. In addition, the power of the infrared lamps can be individually controlled.
In this embodiment, the support device 50 has 3 support pins 51 and a disk-shaped base plate 52 made of quartz for fixing the support pins 51. The chassis 52 is configured to be rotatable in a horizontal state about a rotation shaft 53 (fig. 1) in a chamber of the RTA apparatus. The 3 support pins 51 are integrally formed with lower surfaces W having contact surfaces with the wafer WB A tip part 51a of the contact part Y, a base part 51b fixed to the chassis 52, and a sub-partA cylindrical portion 51c extending from the distal end portion 51a to the base portion 51 b.
The material of the support pins 51 is preferably quartz or SiC. By making the support pins 51 of a material having a low thermal conductivity, such as quartz, heat flow from the lower surface of the wafer to the support pins can be suppressed. Further, by making the support pin 51 of a material having a stable shape and strength at high temperatures, such as SiC, the shape of the tip portion 51a is stable, and even when it is made into an acute-angled shape, it is possible to prevent breakage. The material of the bottom plate 52 is preferably transparent quartz that does not block the light.
The support pin 51 is formed by, for example, processing the upper end of a columnar rod body like the tip of a pencil to form a conical tip 51 a. The cylindrical portion 51c and the base portion 51b are preferably cylindrical. That is, the distal end portion 51a is formed in a conical shape having a tip smaller than the cylindrical portion 51 c. The contact portion Y of the distal end portion 51a is point-shaped or spherical. In this embodiment, the support pin 51 is disposed obliquely so that not only the cylindrical portion 51c and the base portion 51b but also all the support pin 51 including the distal end portion 51a do not contact the vertical line X that hangs down from the contact portion Y toward the chassis side, that is, so that the distal end portion, the cylindrical portion, and the base portion of the support pin 51 do not exist below the contact portion Y. Although not shown, the distal end portion 51a may be formed in a truncated conical shape. In the case where the tip portion 51a has a truncated conical shape, the contact portion Y has a linear edge, similarly to the corner portion 21d shown in fig. 7, and in this case, only the cylindrical portion and the base portion except for the tip portion do not contact the vertical line X that is perpendicular to the chassis side from the contact portion Y.
As shown in fig. 2, three recesses 52b are formed in an upper surface 52a of the chassis 52, and the base 51b of the support pin 51 is inserted into the recesses 52b and fixed to the chassis 52. The inner diameter of the recess 52b is slightly larger than the outer diameter of the base 51b of the support pin 51, and the support pin 51 inserted into the recess 52b in the base 51b is fixed without looseness. Three recesses 52 are formed so that the support pins 51 are aligned with the wafer back surface W when the base 51b is fixedBThe pin shaft 51d of the vertical line X is inclined at an inclination angle α, and the inclination angles α are unified in the 3 support pins 51.
If the angle formed by the conical distal end 51a of the support pin 51 is β, the following relational expression (1) is satisfied in this embodiment.
β/2＜α＜（90－β/2）　（1）
The inclination angle α is preferably in the range of 5 degrees to 70 degrees, the temperature of the light shielding wafer support part by the support pin tip is lowered when the inclination angle is less than the lower limit value, and the slip reduction effect becomes difficult to obtain, and the length of the support pin becomes long when the inclination angle exceeds the upper limit value, and the pin is likely to be broken, and the angle β formed by the tip 51a is preferably in the range of 5 degrees to 40 degrees.
Further, the three recesses 52b are arranged at 120-degree intervals when the chassis 52 is viewed from the upper surface. Thus, in order to support the circular wafer W, 3 support pins 51 are also arranged at 120-degree intervals in a plan view. That is, the wafer W is separated from the inner wall surface of the chamber in the chamber, and is separated from the lower surface W thereof as shown in fig. 1BThe sides are supported by 3 points.
In the supporting method of this embodiment, only the base portion 51b of the support pin 51 is inserted into the recess 52b formed in the upper surface 52a of the chassis 52 and fixed to the chassis 52, so that the support pin 51 can be easily fixed to the chassis 52, and the support pin 51 can be stably fixed to the chassis 52. The wafer W is horizontally supported by 3 points by 3 support pins 51 fixed to a base plate 52. In addition, since the support pins 51 are inclined so that the light from the infrared lamp is directly applied to the tip portions 51a of the support pins 51, the temperature rise of the tip portions 51a is further increased, and the wafer lower surface W is further increasedBThe area of the shadow of the tip end portion 51a caused by the light becomes the smallest. Specifically, the support pins 51 contact the wafer backside W at point-like contact portions YBSince the support pins 51 are in contact with the wafer W, the contact area between the support pins 51 and the wafer W can be made extremely small. This can reduce the amount of the wafer from the back surface WBThe heat escaping toward the support pins 51. Since the distal end 51a, the cylindrical portion 51c, and the base 51b of the support pin 51 are not present below the support pin contact portion Y, the infrared lamp passing through the chassis 52The light of (1) reaches the support pin contact portion Y without being blocked by the distal end portion 51a, the cylindrical portion 51c, and the base portion 51 b. Since such a heat transfer phenomenon from the contact portion Y to the support pins and a light shielding phenomenon by the support pins 51 in the contact portion Y are eliminated, the temperature difference in the wafer surface is reduced as compared with patent document 1, and the occurrence of a slip defect due to thermal stress can be reliably suppressed.
< embodiment 2 >
Fig. 3 shows embodiment 2 of the present invention. In fig. 3, the same components as those in fig. 2 are denoted by the same reference numerals, and the description thereof is omitted. In the supporting device 50 shown in fig. 3, three pin holders 54 are welded to the upper surface 52a of the base plate 52 and fixed thereto at 120-degree intervals in a plan view. A recess 54a corresponding to the recess 52b described in embodiment 1 is formed in the pin holder 54. The inner diameter of the recess 54a is slightly larger than the outer diameters of the base 51b and the cylindrical portion 51c of the support pin 51, similarly to the recess 52b, and the support pin 51 having the base 51b and the cylindrical portion 51c inserted into the recess 54a is fixed without looseness. The three recesses 54a are formed so that the support pins 51 are aligned with the wafer back surface W when the base 51b and the cylindrical portion 51c are fixedBThe pin shaft 51d of the vertical line X is inclined at an inclination angle α. although not shown, a pin holder may be used in which only the base 51b of the support pin 51 is inserted into the recess 54a by reducing the height of the pin holder 54. other configurations of embodiment 2 are the same as those of embodiment 1.
In the supporting method of embodiment 2, since the pin holder 54 is disposed and fixed to the upper surface 52a of the base plate 52 so as not to contact the vertical line X hanging from the support pin contact portion Y toward the base plate 52 and the base portion 51b of the support pin 51 and the cylindrical portion 51c or the base portion 51b are held by the pin holder 54, the support pin 51 can be further stably fixed to the base plate 52 and can be directed toward the wafer lower surface WBThe infrared lamp of the support pin contact portion Y is not shielded from light by the pin holder 54. Since such a heat transfer phenomenon from the contact portion Y to the support pins and a light shielding phenomenon by the support pins 51 in the contact portion Y are eliminated, the temperature difference in the wafer surface is reduced as compared with patent document 1, and the occurrence of a slip defect due to thermal stress can be reliably suppressed.
< embodiment 3 >
Fig. 4 shows embodiment 3 of the present invention, and in fig. 4, the same reference numerals are assigned to the same components as in fig. 3, and the description thereof is omitted, and the support device 50 shown in fig. 4 is characterized in that the conical tip portion 51a of the support pin 51 is made narrower than the tip portions of embodiments 1 and 2, and the angle β formed by the conical tip portion is made smaller than the angle formed by the tip portions of embodiments 1 and 2, and the other configuration of embodiment 3 is the same as embodiment 2.
In the supporting method of embodiment 3, the tip portion 51a of the supporting pin 51 is made thinner than that of embodiment 2, and therefore, the heat transfer phenomenon from the contact portion Y to the supporting pin and the light shielding phenomenon by the supporting pin 51 in the contact portion Y can be further eliminated.
< embodiment 4 >
Fig. 5 shows embodiment 4 of the present invention. In fig. 5, the same components as those in fig. 3 are denoted by the same reference numerals, and the description thereof is omitted. The support device 50 shown in fig. 5 is characterized in that: a through hole 52c through which the base portion 51b and the cylindrical portion 51c of the support pin 51 can pass is formed in the base plate 52, and a pin holder 55 for holding the base portion 51b and the cylindrical portion 51c passing through the through hole 52c is fixed to the lower surface 52d of the base plate 52 by welding, and the pin holder 55 is disposed so as not to contact a vertical line X hanging from the support pin contact portion Y toward the base plate 52. Although not shown, only the base 51b of the support pin 51 may be inserted into the recess 55a so that the height of the pin holder 55 is reduced. The other configurations of embodiment 4 are the same as those of embodiment 3.
In the supporting method according to embodiment 4, the pin holder 55 is fixedly attached to the lower surface 52d of the chassis 52 so as not to contact the vertical line X that hangs from the support pin contact portion Y toward the chassis 52, and the base portion 51b of the support pin 51 and the cylindrical portion 51c or the base portion 51b are held by the pin holder 55 by penetrating the through hole 52c of the chassis 52, so that the support pin 51 can be further stably fixed to the chassis 52. Further, as compared with the supporting method of embodiment 3 in which the pin holder 54 is fixed to the upper surface 52a of the base plate 52, the wafer is faced downwardSurface WBThe infrared lamp of (3) does not shield the light from the pin holder 54, and the infrared lamp light generated by the pin holder 54 is emitted to the lower surface W of the waferBThe influence of the shadow in (a) becomes smaller. This can further reduce the temperature drop of the wafer at the support pin contact portion as compared with the supporting method of embodiment 3.
In embodiment 1, as shown in fig. 1, the support pin 51 is disposed so that the tip portion 51a of the support pin 51 is positioned further outward from the chassis 52 than the base portion 51b, but in the present invention, as shown in fig. 6, the support pin 51 may be disposed so that the tip portion 51a of the support pin 51 is positioned further inward from the chassis 52 than the base portion 51 b. If the support pins 51 are disposed so that the distal end portions 51a are outside the base plate 52 as shown in fig. 1, shielding of the pins from light from the oblique direction of the outer periphery can be minimized when the output of the infrared lamp on the outer periphery side is increased to compensate for a decrease in the outer periphery temperature of the semiconductor wafer, and temperature distribution in the wafer plane can be made uniform. Further, if the support pins 51 are disposed so that the distal end portions 51a are located inside the chassis 52 as shown in fig. 6, the support pins 51 are less likely to be pulled out of the recesses 52b of the chassis 52 due to centrifugal force generated by rotation of the chassis 52.
Examples
Next, examples of the present invention and comparative examples are explained.
< example 1 >
A RTA apparatus having the supporting apparatus shown in FIG. 3 was used to heat treat 3 silicon wafers having a diameter of 300mm and a thickness of 775 μm.A supporting pin 51 had a conical tip portion 51a, a cylindrical portion 51c and a base portion 51b, and members in which the entire length of the supporting pin was 19.5mm, the length of the tip portion 51a was 9mm, and the diameters of the cylindrical portion 51c and the base portion 51b were 1.5mm were used.A material of the supporting pin 51 was quartz.A tilt angle α of the supporting pin 51 was 30 degrees, an angle β of the tip portion 51a of the supporting pin 51 was 9 degrees, and a member having a height of 5mm was used for the pin holder 54.
< example 2 >
A RTA apparatus having a support device shown in FIG. 4 was used to heat treat 3 silicon wafers of 300mm diameter and 775 μm thickness cut from the same silicon single crystal ingot as in example 1. the support pin 51 had a conical tip portion 51a, a cylindrical portion 51c and a base portion 51b, and was formed of a member in which the entire length of the support pin was 24mm, the length of the tip portion 51a was 5mm, and the diameters of the cylindrical portion 51c and the base portion 51b were 1 mm. the support pin 51 was made of SiC support pin 51 having an inclination angle α of 45 degrees and an angle β of the tip portion 51a of the support pin 51 of 6 degrees, and the pin holder 54 had a height of 4 mm.
< comparative example 1 >
A RTA apparatus having a support device shown in FIG. 7 was used to heat treat 3 silicon wafers of 300mm diameter and 775 μm thickness cut out from the same silicon single crystal ingot as in example 1. the support pin 21 had a conical tip portion 21c and a cylindrical body portion (corresponding to a cylindrical portion and a base portion) 21e, and the entire length of the support pin was 17mm, the length of the tip portion 21c was 6.5mm, and the diameter of the body portion 21e was 1.5mm, the support pin 21 was made of quartz, the inclination angle α of the support pin 21 was 3 degrees, the angle β of the tip portion 21c of the support pin 21 was 9 degrees, and the pin holder 12 was made of a member of 8mm height.
< comparative experiment >
The RTA apparatus having the supporting apparatus of examples 1 and 2 and comparative example 1 was used to heat treat 3 silicon wafers at the highest heat treatment temperature of 1200 ℃, 1250 ℃, and 1300 ℃ at the temperature rise rate of 50 ℃/sec, the treatment time of 10 sec, and the temperature drop rate of 50 ℃/sec, respectively. The heat-treated silicon wafer was measured for slip extending from the back surface to the front surface of the wafer by a laser scattering foreign matter inspection apparatus (SP 1 manufactured by KLA-Tencor). The results are shown in table 1.
[ Table 1]
Figure 451489DEST_PATH_IMAGE001
< evaluation >
As can be seen from table 1, in the RTA apparatus having the supporting apparatus of comparative example 1, slip dislocation did not occur at the maximum heat treatment temperature of 1200 ℃, but slip dislocation occurred at 1250 ℃, 1300 ℃. In contrast, in the RTA apparatus having the supporting apparatus of examples 1 and 2, the maximum heat treatment temperature was not necessarily 1200 ℃, and slip dislocation did not occur even at 1250 ℃ and 1300 ℃. From the above results, it was confirmed that the supporting method and the supporting apparatus according to the present invention can reliably prevent the occurrence of slip dislocation even in the heat treatment at a high temperature of 1300 ℃.
Industrial applicability
The present invention can be widely applied to the manufacture of semiconductor wafers and semiconductor devices.
Description of the reference symbols
W a semiconductor wafer; x vertical lines; a Y support pin contact portion; 50 a support for the semiconductor wafer; a 51 supporting pin; 51a front end portion of the support pin; 51b a base of the support pin; 51c a cylindrical portion supporting the pin; 51d a pin supporting the pin; 52a chassis; 52a upper surface of the chassis; 52b a recess in the chassis; 52c through holes in the chassis; 52d lower surface of the chassis; 53 rotating shaft; a 54 pin bracket; 54a recess of the pin holder; a 55 pin bracket; 55a pin holder recess.

Claims (20)

1. A method for supporting a semiconductor wafer, in which the semiconductor wafer thermally treated by a rapid thermal processing apparatus using a heat lamp is horizontally supported on the lower surface of the wafer above a base plate by at least 3 support pins fixed to the base plate,
the support pin is integrally formed with: a front end portion having a contact portion contacting a lower surface of the semiconductor wafer, a base portion fixed to the base plate, and a cylindrical portion extending from the front end portion to the base portion,
the tip end portion is formed to be narrower than the cylindrical portion,
the support pin is disposed so as to be inclined such that the cylindrical portion and the base portion do not contact a vertical line that is perpendicular to the chassis from the contact portion.
2. The supporting method as claimed in claim 1, wherein a recess is formed on an upper surface of the base plate, and the base is inserted into the recess and fixed to the base plate.
3. The supporting method as claimed in claim 2, wherein the base is inserted into the recess and directly fixed to the chassis by welding.
4. The supporting method according to claim 1, wherein a pin holder for holding the base portion or the base portion and the cylindrical portion is fixed to an upper surface of the chassis, and the pin holder is disposed so as not to contact a vertical line that is perpendicular to the chassis side from the contact portion.
5. The supporting method according to claim 1, wherein a through hole through which the base portion or the base portion and the cylindrical portion can pass is formed in the chassis, a pin holder for holding the base portion or the base portion and the cylindrical portion that pass through the through hole is fixed to a lower surface of the chassis, and the pin holder is disposed so as not to contact a vertical line that is perpendicular to the chassis from the contact portion.
6. The supporting method as claimed in any one of claims 1 to 5, wherein the supporting pin is made of quartz or SiC, and the base plate is made of quartz.
7. The supporting method according to any one of claims 1 to 5, wherein the supporting pin is disposed obliquely such that the tip portion is located further to an outer side of the chassis than the base portion.
8. The supporting method according to claim 6, wherein the supporting pin is disposed obliquely so that the tip portion is located further to an outer side of the chassis than the base portion.
9. The supporting method according to any one of claims 1 to 5, wherein the supporting pin is arranged obliquely such that the tip portion is located further to an inner side of the chassis than the base portion.
10. The supporting method according to claim 6, wherein the supporting pin is disposed obliquely so that the tip portion is located further to an inner side of the chassis than the base portion.
11. A supporting device of a semiconductor wafer horizontally supporting the semiconductor wafer thermally treated by a rapid thermal processing apparatus using a heating lamp, characterized by having at least 3 supporting pins and a base plate for fixing the supporting pins, the supporting pins being integrally formed with: the semiconductor wafer mounting apparatus includes a tip portion having a contact portion that contacts a lower surface of the semiconductor wafer, a base portion fixed to the chassis, and a cylindrical portion extending from the tip portion to the base portion, wherein the tip portion is formed to have a tip smaller than the cylindrical portion, and the support pins are arranged obliquely so that the cylindrical portion and the base portion do not contact a vertical line that is perpendicular to the chassis from the contact portion.
12. The supporting device as claimed in claim 11, wherein a recess is formed on an upper surface of the bottom plate, and the base is inserted into the recess and fixed to the bottom plate.
13. The support device of claim 12, wherein the base is inserted into the recess and secured directly to the chassis using welding.
14. The support device according to claim 11, wherein a pin holder that holds the base portion or the base portion and the cylindrical portion is fixed to an upper surface of the chassis, and the pin holder is disposed so as not to contact a vertical line that is perpendicular to the chassis side from the contact portion.
15. The support device according to claim 11, wherein a through hole through which the base portion or the base portion and the cylindrical portion can pass is formed in the chassis, a pin holder for holding the base portion or the base portion and the cylindrical portion that pass through the through hole is fixed to a lower surface of the chassis, and the pin holder is disposed so as not to contact a vertical line that is perpendicular to the chassis from the contact portion.
16. The support device of any one of claims 11 to 15, wherein the support pin is made of quartz or SiC and the base plate is made of quartz.
17. The support device according to any one of claims 11 to 15, wherein the support pin is arranged obliquely in such a manner that the front end portion is located further to an outer side of the chassis than the base portion.
18. The support device according to claim 16, wherein the support pin is disposed obliquely so that the front end portion is located further to an outer side of the chassis than the base portion.
19. The support device according to any one of claims 11 to 15, wherein the support pin is arranged obliquely in such a manner that the front end portion is located further to an inner side of the chassis than the base portion.
20. The support device according to claim 16, wherein the support pin is arranged obliquely such that the front end portion is located further to an inner side of the chassis than the base portion.
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